DG201HS Datasheet

DG201HS
Vishay Siliconix
High-Speed Quad SPST CMOS Analog Switch
DESCRIPTION
FEATURES
The DG201HS is an improved monolithic device containing
four independent analog switches. It is designed to provide
high speed, low error switching of analog signals. Combining
low on-resistance (25 Ω) with high speed (tON: 38 ns), the
DG201HS is ideally suited for high speed data acquisition
requirements.
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To achieve high voltage ratings and superior switching
performance, the DG201HS is built on a proprietary
high-voltage silicon-gate process. An epitaxial layer
prevents latchup.
BENEFITS
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Each switch conducts equally well in both directions when
on, and blocks input voltages to the supply values, when off.
Fast Switching-tON: 38 ns
Low On-Resistance: 25 Ω
Low Leakage: 100 pA
Low Charge Injection
TTL/CMOS Logic Compatible
Single Supply Compatibility
High Current Rating: - 30 mA
Pb-free
Available
RoHS*
COMPLIANT
Faster Throughput
Higher Accuracy
Reduced Pedestal Error
Upgrades Existing Designs
Simple Interfacing
Replaces HI201HS, ADG201HS
Space Savings (TSSOP)
APPLICATIONS
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Data Acquisition
Hi-Rel Systems
Sample-and-Hold Circuits
Communication Systems
Automatic Test Equipment
Integrator Reset Circuits
Choppers
Gain Switching
Avionics
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
LCC
Dual-In-Line, SOIC and TSSOP
D1
IN1
1
16
IN2
D1
2
15
D2
14
S2
S1
V-
3
13
4
NC
IN2
D2
Key
3
2
1
20
19
S1
4
18
S2
V-
5
17
V+
NC
6
16
NC
GND
7
15
NC
S4
8
14
S3
V+
GND
5
12
NC
S4
6
11
S3
D4
7
10
D3
IN4
8
9
IN3
Top View
IN1
9
D4
10
IN4
11
12
NC IN3
Top View
TRUTH TABLE
Logic
0
1
Switch
ON
OFF
Logic "0" ≤ 0.8 V
Logic "1" ≥ 2.4 V
13
D3
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 70038
S-71241–Rev. G, 25-Jun-07
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DG201HS
Vishay Siliconix
ORDERING INFORMATION
Temp Range
Package
Part Number
DG201HSDJ
DG201HSDJ-E3
16-Pin Plastic DIP
16-Pin Narrow SOIC
DG201HSDY
DG201HSDY-E3
DG201HSDY-T1
DG201HSDY-T1-E3
16-Pin TSSOP
DG201HSDQ
DG201HSDQ-E3
DG201HSDQ-T1
DG201HSDQ-T1-E3
- 40 to 85 °C
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
V+ to V-
Unit
44
GND to V-
25
a
Digital Inputs , VS, VD
Continuous Current (Any Terminal)
30
Current, S or D (Pulsed at 1 ms, 10 % duty cycle)
100
Storage Temperature
(A Suffix)
- 65 to 150
(D Suffix)
- 65 to 125
16-Pin Plastic DIPc
Power Dissipation (Package)b
V
(V-) - 4 to (V+) + 4 or
30 mA, whichever occurs first
16-Pin CerDIP
mA
°C
470
d
900
e
16-Pin Narrow Body SOIC and TSSOP
600
LCC-20d
900
mW
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 6 mW/°C above 75 °C.
d. Derate 12 mW/°C above 75 °C.
e. Derate 7.6 mW/°C above 75 °C.
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
SX
5V
Reg
Level
Shift/
Drive
VV+
DX
INX
GND
V-
Figure 1.
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Document Number: 70038
S-71241–Rev. G, 25-Jun-07
DG201HS
Vishay Siliconix
SPECIFICATIONSa
Test Conditions
Unless Specified
V+ = 15 V, V- = - 15 V
Parameter
Symbol
VIN = 3 V, 0.8 Vf
Tempb
IS = - 10 mA, VD = ± 8.5 V
V+ = 13.5 V, V- = - 13.5 V
Room
Full
25
Room
Room
Full
Room
Full
Room
Full
3
0.1
Typc
A Suffix
- 55 to 125 °C
D Suffix
- 40 to 85 °C
Mind
Maxd
Mind
Maxd
Unit
V-
V+
V-
V+
V
50
75
Ω
Analog Switch
Analog Signal Rangee
Drain-Source
On-Resistance
rDS(on) Match
VANALOG
rDS(on)
IS(off)
Switch Off Leakage Current
ID(off)
Channel On Leakage
Current
ID(on)
Full
V+ = 16.5 V, V- = - 16.5 V
VD = ± 15.5 V
VS= ± 15.5 V
V+ = 16.5 V, V- = - 16.5 V
VS = VD = ± 15.5 V
Digital Control
Input, High Voltage
VINH
Full
Input, Low Voltage
VINL
Full
Input Capacitance
Input Current
CIN
IINH or IINL
Full
0.1
0.1
50
75
%
-1
- 60
-1
- 60
-1
- 60
1
60
1
60
1
60
2.4
-1
- 20
-1
- 20
-1
- 20
1
20
1
20
1
20
2.4
0.8
0.8
5
VIN under test = 0.8 V, 3 V
Full
RL = 1 kΩ, CL = 35 pF
VS = ± 10 V, VINH = 3 V
See Figure 2
tOFF2
Room
Full
Room
Full
Room
150
ts
Room
180
Room
-5
Room
85
Room
100
nA
V
pF
-1
1
-1
1
µA
60
75
50
70
ns
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Output Settling Time to 0.1 %
Charge Injection
tON
tOFF1
Q
Off Isolation
OIRR
Crosstalk
(Channel-to-Channel)
XTALK
CL = 1 nF, VS = 0 V
Vgen = 0 V, Rgen = 0 Ω
RL = 1 kΩ, CL = 10 pF
f = 100 kHz
Any Other Channel Switches
RL = 1 kΩ, CL = 10 pF
f = 100 kHz
48
30
Source Off Capacitance
CS(off)
Room
8
CD(off)
Room
8
Channel On Capacitance
Drain-to-Source
Capacitance
CD(on)
Room
30
Room
0.5
Room
Full
Room
Full
4.5
CDS(off)
pC
dB
Drain Off Capacitance
VS , VD = 0 V, f = 1 MHz
60
75
50
70
pF
Power Supplies
Positive Supply Current
Negative Supply Current
Power Consumptionc
I+
IPC
V+ = 15 V, V- = - 15 V
VIN = 0 or 5 V
Full
10
10
3.5
-6
mA
-6
240
240
mW
Notes:
a.Refer to PROCESS OPTION FLOWCHART.
b.Room = 25 °C, Full = as determined by the operating temperature suffix.
c.Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d.The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e.Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
Document Number: 70038
S-71241–Rev. G, 25-Jun-07
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DG201HS
Vishay Siliconix
SPECIFICATIONSa FOR SINGLE SUPPLY
Test Conditions
Unless Specified
V+ = 10.8 V to 16.5 V,
Parameter
Symbol
V- = GND = 0 V, VIN = 3 V, 0.8 Vf
Tempb
Typc
A Suffix
- 55 to 125 °C
D Suffix
- 40 to 85 °C
Mind
Maxd
Mind
Maxd
Unit
0
V+
0
V+
V
-1
- 20
-1
- 20
-1
- 20
90
120
1
20
1
20
1
20
Ω
-1
- 60
-1
- 60
-1
- 60
90
120
1
60
1
60
1
60
Analog Switch
Analog Signal Rangee
Drain-Source
On-Resistance
VANALOG
rDS(on)
IS(off)
Switch Off Leakage Current
ID(off)
Channel On Leakage
Current
ID(on) + IS(on)
Full
IS = - 10 mA, VD = 8.5 V
V+ = 10.8 V
V+ = 16.5 V
VS= 0.5 V, 10 V
VD = 10 V, 0.5 V
V+ = 16.5 V
VD = 0.5 V, 10 V
Room
Full
Room
Full
Room
Full
Room
Full
Digital Control
Input, High Voltage
VINH
Full
Input, Low Voltage
VINL
Full
Input Capacitance
CIN
Input Current
Full
65
0.1
0.1
0.1
2.4
0.8
5
V+ = 16.5 V
VIN under test = 0.8 V, 3 V
Full
RL = 1 kΩ, CL = 35 pF
VS = 2 V, V = 10.8 V
See Figure 2
tOFF2
Room
Full
Room
Full
Room
150
ts
Room
180
Room
10
Room
85
Room
100
IINH or IINL
2.4
0.8
nA
V
pF
-1
1
-1
1
µA
50
70
50
70
ns
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Output Settling Time to 0.1 %
Charge Injection
tON
tOFF1
Q
Off Isolation
OIRR
Crosstalk
(Channel-to-Channel)
XTALK
CL = 1 nF, VS = 0 V
Vgen = 0 V, Rgen = 0 Ω
RL = 1 kΩ, CL = 10 pF
f = 100 kHz
Any Other Channel Switches
RL = 1 kΩ, CL = 10 pF
f = 100 kHz
Source Off Capacitance
CS(off)
Drain Off Capacitance
CD(off)
Channel On Capacitance
CD(on)
VANALOG = 0 V
I+
PC
V+ = 15 V, VIN = 0 or 5 V
Power Supply
Positive Supply Current
Power Consumptionc
f = 1 MHz
50
70
50
70
pC
dB
Room
10
Room
10
Room
30
pF
Full
10
10
mA
Full
150
150
mW
Notes:
a.Refer to PROCESS OPTION FLOWCHART.
b.Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d.The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e.Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 70038
S-71241–Rev. G, 25-Jun-07
DG201HS
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
50
r DS(on) – Drain-Source On-Resistance (Ω)
r DS(on) – Drain-Source On-Resistance (Ω)
70
60
50
±5V
40
± 10 V
30
± 15 V
20
± 20 V
10
0
- 20 - 16 - 12
-8
-4
0
4
8
12
16
V+ = 15 V
V- = - 15 V
40
125 °C
85 °C
30
25 °C
20
0 °C
- 55 °C
10
0
- 15
20
- 10
-5
10
15
rDS(on) vs. VD and Temperature
180
10 nA
V+ = 5 V
160
140
120
1 nA
Leakage
r DS(on) – Drain-Source On-Resistance (Ω)
5
VD – Drain Voltage (V)
VD – Drain Voltage (V)
rDS(on) vs. VD and Power Supply Voltages
7V
100
80
10 V
60
ID(on)
100 pA
12 V
IS(off), ID(off)
15 V
40
20
0
0
2
4
6
8
10
12
14
10 pA
- 60 - 40 - 20
16
VD – Drain Voltage (V)
0
20
40
60
80
100 120 140
Temperature (°C)
rDS(on) vs. VD and Single Power Supply Voltages
Leakage Currents vs. Temperature
2.5
55
2
50
Switching Time (ns)
V TH (V)
0
1.5
1
45
tON
40
35
0.5
tOFF
30
0
4
6
8
10
12
14
16
18
20
Positive Supplies (V)
Input Switching Threshold vs. Supply Voltage
Document Number: 70038
S-71241–Rev. G, 25-Jun-07
±4
±6
±8
± 10
± 12
± 14
± 16
± 18
± 20
Supply Voltage (V)
Switching Time vs. Power Supply Voltage
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DG201HS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
65
45
V+ = 15 V
V- = - 15 V
60
tON
55
t ON, t OFF (ns)
Switching Time (ns)
40
35
tOFF
30
50
45
tON
40
25
35
tOFF
30
20
- 55
- 25
0
25
50
75
100
4
125
6
8
Temperature (°C)
12
14
16
18
20
Switching Times vs. Power Supply Voltage
Switching Times vs. Temperature
20
50
V+ = 15 V, V- = 0 V
V+ = 10.8 V
V- = 0 V
10
40
Chargie Injection (pC)
45
Switching Time (ns)
10
V+ – Positive Supply (V)
tON
35
tOFF
30
0
- 10
V+ = 15 V
V- = - 15 V
- 20
- 30
25
- 40
20
- 55
- 25
0
25
50
75
100
- 15
125
- 10
-5
0
5
10
Temperature (°C)
VS – Source Voltage (V)
Switching Times vs. Temperature
Charge Injection vs. Source Voltage
15
120
V+ = 15 V
V- = - 15 V
110
100
RL = 100 Ω
OIRR
90
80
70
RL = 1 kΩ
60
50
40
10 k
100 k
1M
10 M
f – Frequency (Hz)
Off Isolation vs. Frequency
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Document Number: 70038
S-71241–Rev. G, 25-Jun-07
DG201HS
Vishay Siliconix
TEST CIRCUITS
+ 15 V
V+
D
S
± 10 V
IN
CL
35 pF
RL
1 kΩ
V-
tr < 20 ns
tf < 20 ns
50 %
0V
VO
3V
GND
3V
Logic
Input
tOFF1
Switch
Input
VS
Switch
Output
VO
90 %
10 %
tON
- 15 V
tOFF2
CL (includes fixture and stray capacitance)
RL
VO = V S
RL + rDS(on)
Figure 2. Switching Time
+ 15 V
V+
Rg
S
D
IN
CL
1 nF
3V
INX
V-
GND
ΔVO
VO
VO
SWON
OFF
Q = ΔVO x CL
- 15 V
Figure 3. Charge Injection
V+
C
S1
VS
V+
S
VS
+ 15 V
C
+ 15 V
VO
D
Rg = 50 Ω
Rg = 50 Ω
D1
50 Ω
IN1
0 V, 3 V
RL
IN
NC
0 V, 3 V
GND
V-
C
0 V, 3 V
S2
D2
VO
RL
IN2
GND
V-
C
- 15 V
- 15 V
Off Isolation = 20 log
VS
VO
XTA LK Isolation = 20 log
VS
VO
C = RF bypass
Figure 4. Off Isolation
Document Number: 70038
S-71241–Rev. G, 25-Jun-07
Figure 5. Crosstalk
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DG201HS
Vishay Siliconix
APPLICATIONS
A high-speed, low-glitch analog switch such as Vishay Siliconix’s DG201HS improves the accuracy and shortens the acquisition
and settling times of a sample-and-hold circuit.
Input
Buffer
DG201HS
JFET Buffer
OUTPUT
to A/D Converter
VANALOG
CH
(Polystyrene)
Si581
SAMPLE/HOLD
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?70038.
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Document Number: 70038
S-71241–Rev. G, 25-Jun-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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