Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
PDZ-B series
Voltage regulator diodes
Product data sheet
Supersedes data of 2002 Feb 18
2004 Mar 22
NXP Semiconductors
Product data sheet
Voltage regulator diodes
PDZ-B series
FEATURES
PINNING
• Total power dissipation: max. 400 mW
;;
PIN
• Small plastic package suitable for surface mounted
design
1
2
• Wide variety of voltage ranges: nominal 2.4 to 36 V
(E24 range)
• Tolerance approximately ±2%.
handbook, halfpage
• General voltage regulation.
cathode
anode
1
APPLICATIONS
DESCRIPTION
2
Top view
MAM387
The marking bar indicates the cathode.
DESCRIPTION
Fig.1
Low-power general purpose voltage regulator diodes in a
small plastic SMD SOD323 (SC-76) package.
Simplified outline (SOD323; SC-76) and
symbol.
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
PDZ2.4B
Z0
PDZ5.1B
Z8
PDZ11B
ZG
PDZ24B
ZQ
PDZ2.7B
Z1
PDZ5.6B
Z9
PDZ12B
ZH
PDZ27B
ZR
PDZ3.0B
Z2
PDZ6.2B
ZA
PDZ13B
ZJ
PDZ30B
ZS
PDZ3.3B
Z3
PDZ6.8B
ZB
PDZ15B
ZK
PDZ33B
ZT
PDZ3.6B
Z4
PDZ7.5B
ZC
PDZ16B
ZL
PDZ36B
ZU
PDZ3.9B
Z5
PDZ8.2B
ZD
PDZ18B
ZM
PDZ4.3B
Z6
PDZ9.1B
ZE
PDZ20B
ZN
PDZ4.7B
Z7
PDZ10B
ZF
PDZ22B
ZP
ORDERING INFORMATION
TYPE
NUMBER
PDZ2.4B to
PDZ36B
2004 Mar 22
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 2 leads
2
VERSION
SOD323
NXP Semiconductors
Product data sheet
Voltage regulator diodes
PDZ-B series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
−
IF
continuous forward current
IZSM
non-repetitive peak reverse current
tp = 100 μs; square wave;
Tamb = 25 °C prior to surge
Ptot
total power dissipation
Tamb = 25 °C; note 1;
see Fig.2
Tstg
Tj
UNIT
200
mA
see Table 2
−
400
mW
storage temperature
−65
+150
°C
junction temperature
−
150
°C
Note
1. Device mounted on a printed-circuit board measuring 11 × 25 × 1.6 mm.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth(j-s)
thermal resistance from junction to soldering point
Rth(j-a)
thermal resistance from junction to ambient
note 1
Note
1. Device mounted on a printed-circuit board measuring 11 × 25 × 1.6 mm.
2004 Mar 22
3
VALUE
UNIT
130
K/W
340
K/W
NXP Semiconductors
Product data sheet
Voltage regulator diodes
PDZ-B series
CHARACTERISTICS
Table 1 Total series
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
IR
reverse current
PDZ2.4B
PDZ2.7B
PDZ3.0B
PDZ3.3B
PDZ3.6B
PDZ3.9B
PDZ4.3B
PDZ4.7B
PDZ5.1B
PDZ5.6B
PDZ6.2B
PDZ6.8B
PDZ7.5B
PDZ8.2B
PDZ9.1B
PDZ10B
PDZ11B
PDZ12B
PDZ13B
PDZ15B
PDZ16B
PDZ18B
PDZ20B
PDZ22B
PDZ24B
PDZ27B
PDZ30B
PDZ33B
PDZ36B
2004 Mar 22
CONDITIONS
4
MAX.
UNIT
IF = 10 mA; see Fig.3
IF = 100 mA; see Fig.3
0.9
1.1
V
V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1.5 V
VR = 2.5 V
VR = 3 V
VR = 3.5 V
VR = 4 V
VR = 5 V
VR = 6 V
VR = 7 V
VR = 8 V
VR = 9 V
VR = 10 V
VR = 11 V
VR = 12 V
VR = 13 V
VR = 15 V
VR = 17 V
VR = 19 V
VR = 21 V
VR = 23 V
VR = 25 V
VR = 27 V
50
20
10
5
5
3
3
2
2
1
500
500
500
500
500
100
100
100
100
50
50
50
50
50
50
50
50
50
50
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
5
TEMP. COEFF.
SZ (mV/K)
at IZ = 5 mA
(see Figs 4 and 5)
DIODE CAP.
Cd (pF) at
f = 1 MHz;
VR = 0
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A) at tp = 100 μs;
Tamb = 25 °C
MAX.
MAX.
at IZ
(mA)
MAX.
at IZ
(mA)
TYP.
MAX.
MAX.
2.43
2.69
2.85
3.32
3.60
3.89
4.17
4.55
4.96
5.48
6.06
6.65
7.28
8.02
8.85
9.77
10.78
11.74
12.91
14.34
15.85
17.56
19.52
21.54
23.72
26.19
29.19
32.15
35.07
2.63
2.91
3.07
3.53
3.85
4.16
4.48
4.75
5.20
5.73
6.33
6.93
7.60
8.36
9.23
10.21
11.22
12.24
13.49
14.98
16.51
18.35
20.39
22.47
24.78
27.53
30.69
33.79
36.87
1 000
1 000
1 000
1 000
500
500
600
600
250
100
80
60
60
60
60
60
60
80
80
80
80
80
100
100
120
150
200
250
300
0.5
0.5
0.5
0.5
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
100
100
95
95
90
90
90
90
60
50
50
40
10
10
10
10
10
10
10
15
20
20
20
25
30
40
40
40
60
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
−1.6
−2.0
−2.1
−2.4
−2.4
−2.5
−2.5
−1.4
0.3
1.9
2.7
3.4
4.0
4.6
5.5
6.4
7.4
8.4
9.4
11.4
12.4
14.4
16.4
18.4
20.4
23.4
26.6
29.7
33.0
450
440
425
410
390
370
350
325
300
275
250
215
170
150
120
110
108
105
103
99
97
93
88
84
80
73
66
60
59
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
5.5
5.5
5.5
5.5
3.5
3.5
3.5
3.5
3.0
3.0
2.5
2.0
1.5
1.5
1.5
1.3
1.3
1.0
1.0
0.9
0.8
Product data sheet
MIN.
PDZ-B series
PDZ2.4B
PDZ2.7B
PDZ3.0B
PDZ3.3B
PDZ3.6B
PDZ3.9B
PDZ4.3B
PDZ4.7B
PDZ5.1B
PDZ5.6B
PDZ6.2B
PDZ6.8B
PDZ7.5B
PDZ8.2B
PDZ9.1B
PDZ10B
PDZ11B
PDZ12B
PDZ13B
PDZ15B
PDZ16B
PDZ18B
PDZ20B
PDZ22B
PDZ24B
PDZ27B
PDZ30B
PDZ33B
PDZ36B
DIFFERENTIAL RESISTANCE
rdif (Ω)
NXP Semiconductors
TYPE
NUMBER
WORKING VOLTAGE
VZ (V)
at IZ = 5 mA
Voltage regulator diodes
2004 Mar 22
Table 2 Per type
Tj = 25 °C unless otherwise specified.
NXP Semiconductors
Product data sheet
Voltage regulator diodes
PDZ-B series
GRAPHICAL DATA
MBK245
500
MBG781
300
handbook, halfpage
handbook, halfpage
Ptot
(mW)
IF
(mA)
400
200
300
200
100
100
0
0.6
0
0
50
100
150
200
Tamb (°C)
0.8
1
VF (V)
Tj = 25 °C.
Fig.3
Forward current as a function of forward
voltage; typical values.
Fig.2 Power derating curve.
MGL273
MGL274
0
10
handbook, halfpage
handbook, halfpage
12
SZ
(mV/K)
SZ
(mV/K)
4.3
11
10
−1
9.1
5
3.9
8.2
7.5
6.8
3.6
−2
6.2
5.6
5.1
0
3.3
4.7
3.0
2.4
2.7
−3
0
20
40
IZ (mA)
−5
60
0
4
PDZ2.4B to PDZ4.3B.
Tj = 25 °C to 150 °C.
PDZ4.7B to PDZ12B.
Tj = 25 °C to 150 °C.
Fig.4
Fig.5
Temperature coefficient as a function of
working current; typical values.
2004 Mar 22
6
8
12
16
IZ (mA)
20
Temperature coefficient as a function of
working current; typical values.
NXP Semiconductors
Product data sheet
Voltage regulator diodes
PDZ-B series
PACKAGE OUTLINE
Plastic surface-mounted package; 2 leads
SOD323
A
D
E
X
v
HD
M
A
Q
1
2
bp
A
A1
(1)
c
Lp
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
HD
Lp
Q
v
mm
1.1
0.8
0.05
0.40
0.25
0.25
0.10
1.8
1.6
1.35
1.15
2.7
2.3
0.45
0.15
0.25
0.15
0.2
Note
1. The marking bar indicates the cathode
OUTLINE
VERSION
SOD323
2004 Mar 22
REFERENCES
IEC
JEDEC
JEITA
SC-76
7
EUROPEAN
PROJECTION
ISSUE DATE
03-12-17
06-03-16
NXP Semiconductors
Product data sheet
Voltage regulator diodes
PDZ-B series
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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http://www.nxp.com/profile/terms, including those
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Mar 22
8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R76/05/pp9
Date of release: 2004 Mar 22
Document order number: 9397 750 12615
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