5962R13250

REVISIONS
LTR
DESCRIPTION
A
DATE (YR-MO-DA)
APPROVED
16-04-04
C. SAFFLE
Delete all match referenced tests as specified under Table I. - ro
REV
SHEET
REV
A
A
A
A
A
SHEET
15
16
17
18
19
REV STATUS
REV
A
A
A
A
A
A
A
A
A
A
A
A
A
A
OF SHEETS
SHEET
1
2
3
4
5
6
7
8
9
10
11
12
13
14
PMIC N/A
PREPARED BY
RICK OFFICER
STANDARD
MICROCIRCUIT
DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
http://www.landandmaritime.dla.mil
CHECKED BY
RAJESH PITHADIA
APPROVED BY
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
CHARLES F. SAFFLE
DRAWING APPROVAL DATE
15-07-28
REVISION LEVEL
A
MICROCIRCUIT, LINEAR, 10 MHz, DUAL,
OPERATIONAL AMPLIFIER, MONOLITHIC
SILICON
SIZE
CAGE CODE
A
67268
SHEET
DSCC FORM 2233
APR 97
5962-13250
1 OF 19
5962-E234-16
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and
space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or
Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
1.2 PIN. The PIN is as shown in the following example:
5962
R
13250
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
01
V
H
A
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
/
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are
marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
Generic number
01
Circuit function
RH1498
10 MHz dual, operational amplifier
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device class
Device requirements documentation
Q or V
Certification and qualification to MIL-PRF-38535
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
H
Descriptive designator
GDFP1-F10
Terminals
Package style
10
Glass sealed flat pack
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-13250
A
REVISION LEVEL
A
SHEET
2
1.3 Absolute maximum ratings. 1/
Total supply voltage (+VS to –VS) ............................................................................. 36 V
Input current (IIN) ......................................................................................................
Output short circuit duration ......................................................................................
Junction temperature (TJ) ..........................................................................................
Lead temperature (soldering, 10 seconds) ................................................................
Storage temperature range .......................................................................................
Thermal resistance, junction-to-case (JC) ................................................................
10 mA
Continuous 2/
+150C
+300C
-65C to +150C
+40C/W
Thermal resistance, junction-to-ambient (JA) ........................................................... +170C/W
1.4 Recommended operating conditions.
Supply voltages (+VS to –VS) .................................................................................... 5 V and 15 V
Ambient operating temperature range (TA) ............................................................... -55C to +125C
1.5 Radiation features.
Maximum total dose available (dose rate = 50 – 300 rads(Si)/s) .............................. 100 krads(Si) 3/
Maximum total dose available (dose rate =10 mrads(Si)/s): ....................................... 50 krads(Si) 3/
_____
1/
Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
2/
A heat sink may be required to keep the junction temperature below this absolute maximum rating when the output is
shorted indefinitely.
3/
The manufacturer supplying device type 01 has performed high dose rate irradiation test in accordance with MIL-STD-883
method 1019 condition A, and low dose rate irradiation test condition D. The device type 01 radiation end point limits for
the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A to a
maximum total dose of 100 krads(Si), and condition D to a maximum total dose of 50 krads(Si). Device type 01 may be
dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-13250
A
REVISION LEVEL
A
SHEET
3
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Copies of these documents are available online at http://quicksearch.dla.mil or from the Standardization Document Order
Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 as specified herein, or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein.
3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q and V.
3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document
revision level control and shall be made available to the preparing and acquiring activity upon request.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full
ambient operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table I.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-13250
A
REVISION LEVEL
A
SHEET
4
TABLE I. Electrical performance characteristics.
Test
Symbol
Conditions 1/ 2/
VS = 15 V, VCM = VOUT = 0 V
Group A
subgroups
Device
type
-55C  TA +125C
unless otherwise specified
Input offset voltage
VOS
VCM = 14.5 V, -14.5 V
D, L, R
Input bias current
IB
Min
1
VCM = +VS, -VS
VCM = -VS
VCM = -14.5 V
VCM = +VS, -VS
2, 3
1100
1
950
01
1
-715
0
2, 3
-1200
0
1
765
L
1
865
R
1
915
01
2, 3
1
VCM = +VS, -VS
VCM = 14.5 V, -14.5 V
VCM = +VS, -VS
Large signal voltage gain
AVOL
D, L, R
D, L, R
VO = -10 V to +10 V,
RL = 2 k
D, L, R
CMRR
VCM = 14.5 V to -14.5 V
VCM = +VS to -VS
Power supply rejection ratio
PSRR
D, L, R
D, L, R
nA
V
-14.5
14.5
70
nA
300
1
100
01
1000
5, 6
60
4
500
4
500
5, 6
25
4
V/mV
250
01
90
2, 3
86
1
86
1
VS = 2 V to 16 V
15
2, 3
1
VCM = +VS to -VS
-15
01
4
VO = -14.5 V to +14.5 V,
RL = 10 k
Common mode rejection ratio
715
V
1200
1
IOS
0
D
Input voltage range
Input offset current
800
2, 3
VCM = 14.5 V
Unit
Max
01
1
VCM = +VS
Limits
01
dB
90
2, 3
88
1
90
dB
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-13250
A
REVISION LEVEL
A
SHEET
5
TABLE I. Electrical performance characteristics - Continued.
Test
Symbol
Conditions 1/ 2/
VS = 15 V, VCM = VOUT = 0 V
Group A
subgroups
Device
type
-55C  TA +125C
unless otherwise specified
Output voltage swing (low) 3/
VOL
No load
ISINK = 1 mA
D, L, R
ISINK = 10 mA
D, L, R
ISINK = 5 mA
Output voltage swing (high) 3/
VOH
No load
ISOURCE = 1 mA
D, L, R
ISOURCE = 10 mA
D, L, R
ISOURCE = 5 mA
ISC
D, L, R
Gain bandwidth product
GBWP
f = 100 kHz
SR
60
4
100
5, 6
150
4
100
4
500
4
500
5, 6
500
01
25
4
20
4
150
5, 6
250
4
150
4
800
4
800
5, 6
800
01
measure at VO = 5 V
D, L, R
mV
15
2, 3
7.5
1
10
01
mA
2.5
2, 3
3
1
2.5
01
mV
10
5, 6
4
AV = -1, RL = 10 k, VO = 10 V,
30
4
5, 6
Slew rate
Max
75
1
IS
Unit
5, 6
1
D, L, R
Supply current per amp
01
4
D, L, R
Short circuit current
Min
4
D, L, R
Limits
mA
6.8
MHz
5.8
4
01
3.5
5, 6
2.2
4
3
V/s
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-13250
A
REVISION LEVEL
A
SHEET
6
TABLE I. Electrical performance characteristics - Continued.
Test
Symbol
Conditions 1/ 2/
VS = 5 V,
VCM = VOUT = half supply
Group A Device
subgroup type
s
-55C  TA +125C
unless otherwise specified
Input offset voltage
VOS
VCM = +VS - 0.5 V, -VS + 0.5 V
VCM = +VS, -VS
Input bias current
IB
D, L, R
VCM = -VS
VCM = -VS + 0.5 V
VCM = +VS, -VS
IOS
1100
1
950
01
0
650
2, 3
0
1100
1
-650
0
2, 3
-1100
0
700
L
1
800
R
1
850
1
D, L, R
Input voltage range
01
300
1
65
01
2, 3
AVOL
4
+VS = 5 V, RL = 10 k,
VO = 75 mV to 4.8 V
VO = 75 mV to +VS - 0.2 V,
RL = 10 k
Common mode rejection
CMRR
ratio
PSRR
nA
V
-VS
+VS
-VS
+VS
+ 0.5 V
- 0.5 V
600
5, 6
60
4
300
V/mV
D, L, R
1
VCM = +VS to -VS
01
2, 3
VCM = 0.5 V to 4.5 V
Power supply rejection ratio
01
nA
65
2, 3
1
V
800
1
VCM = +VS - 0.5 V, -VS + 0.5 V
Large signal voltage gain
Max
D
VCM = +VS, -VS
VCM = +VS, -VS
01
Unit
2, 3
1
VCM = +VS
VCM = +VS - 0.5 V
Input offset current
Min
1
VCM = +VS, -VS
Limits
76
68
VS = 4.5 V to 12 V,
1
VCM = VO = 0.5 V
2, 3
86
1
88
D, L, R
dB
01
88
dB
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-13250
A
REVISION LEVEL
A
SHEET
7
TABLE I. Electrical performance characteristics - Continued.
Test
Symbol
Group A
subgroups
Conditions 1/ 2/
VS = 5 V,
Device
type
Limits
Unit
VCM = VOUT = half supply
-55C  TA +125C
unless otherwise specified
Output voltage swing (low) 3/
VOL
No load
4
D, L, R
ISINK = 1 mA
D, L, R
ISINK = 2.5 mA
D, L, R
Output voltage swing (high) 3/
VOH
No load
ISOURCE = 1 mA
D, L, R
ISOURCE = 2.5 mA
D, L, R
ISC
D, L, R
Supply current per amp
4
60
4
100
5, 6
150
4
100
4
200
5, 6
220
4
200
D, L, R
01
25
4
20
4
150
5, 6
250
4
150
4
250
5, 6
300
4
250
01
mV
12.5
2, 3
5
1
8
01
mV
10
5, 6
1
IS
30
75
1
VS = 5 V
01
Max
5, 6
4
D, L, R
Short circuit current
Min
mA
2.2
2, 3
2.7
1
2.2
mA
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-13250
A
REVISION LEVEL
A
SHEET
8
TABLE I. Electrical performance characteristics - Continued.
Test
Symbol
Group A
subgroups
Conditions 1/ 2/
VS = 5 V,
Device
type
Limits
Unit
VCM = VOUT = half supply
-55C  TA +125C
unless otherwise specified
Gain bandwidth product
GBWP
Min
f = 100 kHz
4
01
5, 6
Slew rate
SR
6.8
MHz
5.8
VS = 2.5 V, AV = -1, RL = 10 k,
4
VO = 2 V, measure at VO = 1 V
5, 6
2
4
2
D, L, R
Max
01
2.6
V/s
1/
Devices supplied to this drawing have been characterized through all levels D, L, and R of irradiation. Pre and Post
irradiation values are identical unless otherwise specified in Table I. When performing post irradiation electrical
measurements for any RHA level, TA = +25C.
2/
The manufacturer supplying device type 01 has performed high dose rate irradiation test in accordance with MIL-STD-883
method 1019 condition A, and low dose rate irradiation test condition D. The device type 01 radiation end point limits for
the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A to a
maximum total dose of 100 krads(Si), and condition D to a maximum total dose of 50 krads(Si). Device type 01 may be
dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects.
3/
Output voltage swings are measured between the output and power supply rails.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer
has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be
marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535.
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535.
3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance
submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the
manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall
be provided with each lot of microcircuits delivered to this drawing.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-13250
A
REVISION LEVEL
A
SHEET
9
Device type
01
Case outline
H
Terminal
number
Terminal
symbol
1
OUT A
2
-IN A
3
+IN A
4
NC
5
-VS
6
NC
7
+IN B
8
-IN B
9
OUT B
10
+VS
FIGURE 1. Terminal connections.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-13250
A
REVISION LEVEL
A
SHEET
10
4. VERIFICATION
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan
shall not affect the form, fit, or function as described herein.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
on all devices prior to qualification and technology conformance inspection.
4.2.1 Additional criteria for device classes Q and V.
a.
The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the
device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015 of MIL-STD-883.
b.
Interim and final electrical test parameters shall be as specified in table IIA herein.
c.
Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, appendix B.
4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups
A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with
MIL-PRF-38535 including groups A, B, C, D, and E inspections, and as specified herein.
4.4.1 Group A inspection.
a.
Tests shall be as specified in table IIA herein.
b.
Subgroups 7, 8, 9, 10, and 11 in table I, method 5005 of MIL-STD-883 shall be omitted.
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.2.1 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature,
or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The
test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of
MIL-STD-883.
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-13250
A
REVISION LEVEL
A
SHEET
11
TABLE IIA. Electrical test requirements.
Test requirements
Subgroups
(in accordance with
MIL-PRF-38535, table III)
Device
Device
class Q
class V
-----
Interim electrical
parameters (see 4.2)
Final electrical
parameters (see 4.2)
Group A test
requirements (see 4.4)
Group C end-point electrical
parameters (see 4.4)
Group D end-point electrical
parameters (see 4.4)
Group E end-point electrical
parameters (see 4.4)
1, 2, 3, 1/
4, 5, 6
1, 2, 3, 4, 5, 6
1, 2, 3, 2/
4, 5, 6
1, 2, 3, 4, 5, 6
1, 2, 3, 4, 5, 6
1, 2, 3
1, 2, 3,
4, 5, 6
1, 2, 3
1, 4
1, 4
2/
1/ PDA applies to subgroup 1.
2/ Delta limits as specified in table IIB shall be required where specified,
and the delta limits shall be completed with reference to the previous
electrical parameters.
TABLE IIB. Burn-in and operating life test delta parameters. 1/
Parameters
Input offset voltage
Input bias current
Input offset current
Symbol
Endpoint limit
Delta limits
Units
Min
Max
Min
Max
VOS
-800
+800
-250
+250
V
IB
-715
+715
-350
+350
nA
IOS
-70
+70
-50
+50
nA
1/ TA = +25C and VS = 15 V.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-13250
A
REVISION LEVEL
A
SHEET
12
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured
(see 3.5 herein).
a.
End-point electrical parameters shall be as specified in table IIA herein.
b.
For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as
specified in MIL-PRF-38535 for the RHA level being tested. All device classes must meet the postirradiation end-point
electrical parameter limits as defined in table I at TA = +25C 5C, after exposure, to the subgroups specified in
table IIA herein.
4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883
method 1019 conditions A to a maximum total dose of 100 krads(Si), and condition D to a maximum total dose of 50 krads (Si).
4.4.4.1.1 Accelerated annealing test. Accelerated annealing tests shall be performed on all devices requiring a RHA level
greater than 5 krads(Si). The post-anneal end-point electrical parameter limits shall be as specified in table I herein and shall be
the pre-irradiation end-point electrical parameter limit at +25C 5C. Testing shall be performed at initial qualification and after
any process or design changes which may affect the RHA response of the device.
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes
Q and V.
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
(original equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor
prepared specification or drawing.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
6.3 Record of users. Military and industrial users should inform DLA Land and Maritime when a system application requires
configuration control and which SMD's are applicable to that system. DLA Land and Maritime will maintain a record of users and
this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic
devices (FSC 5962) should contact DLA Land and Maritime-VA, telephone (614) 692-8108.
6.4 Comments. Comments on this drawing should be directed to DLA Land and Maritime-VA, Columbus, Ohio 43218-3990,
or telephone (614) 692-0540.
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
6.6 Sources of supply.
6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in
MIL-HDBK-103 and QML-38535. The vendors listed in MIL-HDBK-103 and QML-38535 have submitted a certificate of
compliance (see 3.6 herein) to DLA Land and Maritime-VA and have agreed to this drawing.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-13250
A
REVISION LEVEL
A
SHEET
13
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-13250
A.1 SCOPE
A.1.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified
Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturers
approved QM plan for use in monolithic microcircuits, multi-chip modules (MCMs), hybrids, electronic modules, or devices using
chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting of
military high reliability (device class Q) and space application (device class V) are reflected in the Part or Identification Number
(PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
A.1.2 PIN. The PIN is as shown in the following example:
5962
R
Federal
stock class
designator
\
RHA
designator
(see A.1.2.1)
01
V
9
A
Device
type
(see A.1.2.2)
Device
class
designator
(see A.1.2.3)
Die
code
Die
details
(see A.1.2.4)
13250
/
\/
Drawing number
A.1.2.1 RHA designator. Device classes Q and V RHA identified die meet the MIL-PRF-38535 specified RHA levels. A dash
(-) indicates a non-RHA die.
A.1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
Generic number
01
Circuit function
RH1498
10 MHz dual, operational amplifier
A.1.2.3 Device class designator.
Device class
Q or V
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
Device requirements documentation
Certification and qualification to the die requirements of MIL-PRF-38535
SIZE
5962-13250
A
REVISION LEVEL
A
SHEET
14
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-13250
A.1.2.4 Die details. The die details designation is a unique letter which designates the die's physical dimensions, bonding
pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product
and variant supplied to this appendix.
A.1.2.4.1 Die physical dimensions.
Die type
Figure number
01
A-1
A.1.2.4.2 Die bonding pad locations and electrical functions.
Die type
Figure number
01
A-1
A.1.2.4.3 Interface materials.
Die type
Figure number
01
A-1
A.1.2.4.4 Assembly related information.
Die type
Figure number
01
A-1
A.1.2.4.5 Special handling of dice. Radiation hardened dice require special handling as compared to standard integrated
circuit dice. Radiation hardened dice are susceptible to surface damage due to the absence of silicon nitride passivation that is
present on most standard dice. Silicon nitride protects the dice surface from scratches by its hard and dense properties.
The passivation on radiation hardened dice is silicon dioxide which is much “softer” than silicon nitride. During the visual and
preparation for shipment, electrostatic discharge (ESD) safe tweezers are used and only the edge of the die are touched.
It is recommended that dice handling be performed with extreme care so as to protect the die surface from scratches. If the
need arises to move the die in or out of the chip shipment tray (waffle pack), use an ESD safe plastic tipped bent metal vacuum
probe, preferably .020 inch outside diameter x .010 inch inside diameter (for use with tiny parts). The wand should be
compatible with continuous air vacuums. The tip material should be static dissipative Delrin (or equivalent) plastic.
During die attach, care must be exercised to ensure no tweezers, or other equipment, touch the top of the dice.
A.1.3 Absolute maximum ratings. See paragraph 1.3 herein for details.
A.1.4 Recommended operating conditions. See paragraph 1.4 herein for details.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-13250
A
REVISION LEVEL
A
SHEET
15
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-13250
A.2 APPLICABLE DOCUMENTS.
A.2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a
part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in
the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARD
MIL-STD-883 - Test Method Standard Microcircuits.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 - List of Standard Microcircuit Drawings.
MIL-HDBK-780 - Standard Microcircuit Drawings.
(Copies of these documents are available online at http://quicksearch.dla.mil or from the Standardization Document Order
Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
A.2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the
text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
A.3 REQUIREMENTS
A.3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer’s Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein.
A.3.2 Design, construction and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein and the manufacturer’s QM plan for device classes Q and V.
A.3.2.1 Die physical dimensions. The die physical dimensions shall be as specified in A.1.2.4.1 and on figure A-1.
A.3.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be as
specified in A.1.2.4.2 and on figure A-1.
A.3.2.3 Interface materials. The interface materials for the die shall be as specified in A.1.2.4.3 and on figure A-1.
A.3.2.4 Assembly related information. The assembly related information shall be as specified in A.1.2.4.4 and on figure A-1.
A.3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be as defined in paragraph 3.2.3 herein.
A.3.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and post-irradiation parameter limits are as specified in table I of the body of this
document.
A.3.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric testing
sufficient to make the packaged die capable of meeting the electrical performance requirements in table I.
A.3.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a
customer, shall be identified with the wafer lot number, the certification mark, the manufacturer’s identification and the PIN listed
in A.1.2 herein. The certification mark shall be a “QML” or “Q” as required by MIL-PRF-38535.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-13250
A
REVISION LEVEL
A
SHEET
16
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-13250
A.3.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from a
QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see A.6.4 herein). The certificate of
compliance submitted to DLA Land and Maritime -VA prior to listing as an approved source of supply for this appendix shall
affirm that the manufacturer’s product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the
requirements herein.
A.3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535
shall be provided with each lot of microcircuit die delivered to this drawing.
A.4 VERIFICATION
A.4.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordance
with MIL-PRF-38535 or as modified in the device manufacturer’s Quality Management (QM) plan. The modifications in the QM
plan shall not affect the form, fit, or function as described herein.
A.4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the
manufacturer’s QM plan. As a minimum, it shall consist of:
a.
Wafer lot acceptance for class V product using the criteria defined in MIL-STD-883, method 5007.
b.
100% wafer probe (see paragraph A.3.4 herein).
c.
100% internal visual inspection to the applicable class Q or V criteria defined in MIL-STD-883, method 2010 or the
alternate procedures allowed in MIL-STD-883, method 5004.
A.4.3 Conformance inspection.
A.4.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see
A.3.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing of
packaged die shall be as specified in table IIA herein. Group E tests and conditions are as specified in paragraphs 4.4.4,
4.4.4.1, and 4.4.4.1.1 herein.
A.5 DIE CARRIER
A.5.1 Die carrier requirements. The requirements for the die carrier shall be accordance with the manufacturer’s QM plan or
as specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical and
electrostatic protection.
A.6 NOTES
A.6.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with
MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications, and
logistics purposes.
A.6.2 Comments. Comments on this appendix should be directed to DLA Land and Maritime -VA, Columbus, Ohio,
43218-3990 or telephone (614)-692-0540.
A.6.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
A.6.4 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in
MIL-HDBK-103 and QML-38535. The vendors listed within MIL-HDBK-103 and QML-38535 have submitted a certificate of
compliance (see A.3.6 herein) to DLA Land and Maritime -VA and have agreed to this drawing.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-13250
A
REVISION LEVEL
A
SHEET
17
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-13250
+VS
OUT A
OUT B
-IN A
-IN B
+IN A
+IN B
-VS
FIGURE A-1. Die bonding pad locations and electrical functions.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-13250
A
REVISION LEVEL
A
SHEET
18
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-13250
Die bonding pad locations and electrical functions
Die physical dimensions.
Die size: 117 mils x 82 mils
Die thickness: 12 mils
Interface materials.
Top metallization: Al
Backside metallization: (Substrate) alloyed gold layer.
Glassivation.
Type: SiO2
Thickness: 4 kÅ
Substrate: Single crystal silicon
Assembly related information.
Substrate potential: +VS
Special assembly instructions: Connect backside to +VS.
FIGURE A-1. Die bonding pad locations and electrical functions - Continued.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-13250
A
REVISION LEVEL
A
SHEET
19
STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 16-04-04
Approved sources of supply for SMD 5962-13250 are listed below for immediate acquisition information only and
shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be
revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a
certificate of compliance has been submitted to and accepted by DLA Land and Maritime-VA. This information
bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. DLA Land and Maritime
maintains an online database of all current sources of supply at http://www.landandmaritime.dla.mil/Programs/Smcr/.
Standard
microcircuit drawing
PIN 1/
Vendor
CAGE
number
Vendor
similar
PIN 2/
5962R1325001VHA
64155
RH1498MW
5962R1325001V9A
64155
RH1498DICE
1/ The lead finish shown for each PIN representing
a hermetic package is the most readily available
from the manufacturer listed for that part. If the
desired lead finish is not listed contact the vendor
to determine its availability.
2/ Caution. Do not use this number for item
acquisition. Items acquired to this number may not
satisfy the performance requirements of this drawing.
Vendor CAGE
number
64155
Vendor name
and address
Linear Technology Corporation
1630 McCarthy Boulevard
Milpitas, CA 95035-7417
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.