DG9411 Datasheet

DG9411
Vishay Siliconix
Low-Voltage Single SPDT Analog Switch
DESCRIPTION
FEATURES
The DG9411 is a single-pole/double-throw monolithic CMOS
analog switch designed for high performance switching of
analog signals. Combining low power, high speed (tON: 9 ns,
tOFF: 5 ns), low on-resistance (rDS(on): 7 Ω) and small
physical size (SC70), the DG9411 is ideal for portable and
battery powered applications requiring high performance
and efficient use of board space.
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The DG9411 is built on Vishay Siliconix’s low voltage JI2
process. An epitaxial layer prevents latchup. Break-before make is guaranteed for DG9411.
BENEFITS
Each switch conducts equally well in both directions when
on, and blocks up to the power supply level when off.
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Low voltage operation (2.25 V to 5.5 V)
Low on-resistance - rDS(on): 7 Ω
Fast switching - tON: 9 ns, tOFF: 5 ns
Low charge injection - QINJ: 5 pC
Low power consumption
TTL/CMOS compatible
6-Pin SC70 package
Pb-free
Available
RoHS*
COMPLIANT
Reduced power consumption
Simple logic interface
High accuracy
Reduce board space
APPLICATIONS
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Cellular phones
Communication systems
Portable test equipment
Battery operated systems
Sample and hold circuits
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
TRUTH TABLE
SC-70
IN
1
6
NO (Source1)
V+
2
5
COM
GND
3
4
NC (Source2)
Logic
NC
NO
0
ON
OFF
1
OFF
ON
Logic "0" ≤ 0.8 V
Logic "1" ≥ 2.4 V
Top View
ORDERING INFORMATION
Device Marking
4Dx or
4Dxy
Temp Range
Package
- 40 to 85 °C
SC70-6
Part Number
DG9411DL-T1
DG9411DL-T1-E3
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71347
S-72609-Rev. D, 24-Dec-07
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1
DG9411
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter
Reference V+ to GND
Limit
- 0.3 to + 6
IN, COM, NC, NOa
Continuous Current (Any Terminal)
V
- 0.3 to (V+ + 0.3)
± 50
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
b
mA
± 200
Storage Temperature
Power Dissipation (Packages)
Unit
6-Pin SC70
c
- 65 to 150
°C
250
mW
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 3.1 mW/°C above 70 °C.
SPECIFICATIONS V+ = 2.5 V
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 2.5 V, ± 10 %
VIN = 0.4 or 2.0 Ve
Limits
- 40 to 85 °C
Tempa
Minb
Full
0
Typc
Maxb
Unit
V+
V
Analog Switch
VNO, VNC
VCOM
Analog Signal Ranged
Drain-Source On-Resistance
rDS(on) Flatnessd
rDS(on)
V+ = 2.25 V, VD = 1.0 V, IS = 10 mA
Room
Fulld
26
29
rDS(on)
Flatness
V+ = 2.5 V
Room
10
IS(off)
Switch Off
Leakage Currentf
V+ = 2.75 V, VS = 0.5 V/1.5 V, VD = 1.5 V/0.5 V
ID(off)
Channel-On
Leakage Currentf
ID(on)
V+ = 2.75 V, VS = VD = 0.5 V/1.5 V
35
40
Ω
Room
Fulld
- 250
- 3.0
250
3.0
pA
nA
Room
Fulld
- 250
- 3.0
250
3.0
pA
nA
Room
Fulld
- 250
- 3.0
250
3.0
pA
nA
2
Digital Control
Input High Voltage
VINH
Full
Input Low Voltage
VINL
Full
Input Capacitanced
Cin
IINL or IINH
Input Current
0.4
Full
VIN = 0 or V+
Full
3
-1
V
pF
1
µA
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Charge Injectiond
QINJ
Off-Isolationd
OIRR
Crosstalkd
XTALK
Source-Off Capacitanced
CL = 1 nF, VGEN = 0 V, VS = 0 V, RGEN = 0 Ω,
Figure 3
RL = 50 Ω, CL = 5 pF, f = 1 MHz
CS(off)
Capacitanced
CD(on)
d
Drain-to-Source Capacitance
16
40
45
Room
Full
7
23
28
ns
10
pC
Roomd
td
Break-Before-Make Time
Channel-On
VD or VS = 1.5 V, RL = 300 Ω, CL = 35 pF
Figures 1 and 2
Room
Fulld
VIN = 0 or V+, f = 1 MHz
CDS(off)
1
12
Room
5
Room
- 73
Room
- 70
Room
7
Room
20
Room
20
dB
pF
Power Supply
Power Supply Range
V+
d
Power Supply Current
I+
Power Consumption
PC
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2
2.25
VIN = 0 or V+
2.75
0.01
V
1.0
µA
0.3
µW
Document Number: 71347
S-72609-Rev. D, 24-Dec-07
DG9411
Vishay Siliconix
SPECIFICATIONS V+ = 3 V
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 3 V, ± 10 %
VIN = 0.4 or 2.0 Ve
Limits
- 40 to 85 °C
Tempa
Minb
Full
0
Typc
Maxb
Unit
V+
V
Analog Switch
Analog Signal Ranged
VNO, VNC
VCOM
Drain-Source
On-Resistanced
rDS(on)
V+ = 2.7 V, VD = 1.5 V, IS = 10 mA
Room
Full
15
19
rDS(on) Flatnessd
rDS(on)
Flatness
VS = 0 to V+, IS = 10 mA
Room
7.5
Switch Off
Leakage Currentf
Channel-On
Leakage Currentf
IS(off)
V+ = 3.3 V, VS = 1 V/3 V, VD = 3 V/1 V
ID(off)
ID(on)
V+ = 3.3 V, VS = VD = 1 V/3 V
25
30
Ω
Room
Full
- 500
- 4.0
500
4.0
pA
nA
Room
Full
- 500
- 4.0
500
4.0
pA
nA
Room
Full
- 500
- 4.0
500
4.0
pA
nA
2
Digital Control
Input High Voltage
VINH
Full
Input Low Voltage
VINL
Full
Input Capacitanced
Cin
Input Current
IINL or IINH
0.8
Full
VIN = 0 or V+
Full
3
-1
V
pF
1
µA
Dynamic Characteristics
Turn-On Timed
tON
Turn-Off Timed
tOFF
Break-Before-Make Timed
VD or VS = 2.0 V, RL = 300 Ω, CL = 35 pF
Figures1 and 2
td
Room
Full
12
15
20
Room
Full
6
8
10
ns
10
pC
Room
CL = 1 nF, VGEN = 0 V, VS = 0 V, RGEN = 0 Ω,
Figure 3
1
7
Charge Injectiond
QINJ
Off-Isolationd
OIRR
Crosstalkd
XTALK
Source-Off Capacitanced
CS(off)
Room
7
Channel-On Capacitanced
CD(on)
Room
20
Drain-to-Source
Capacitanced
CDS(off)
Room
20
RL = 50 Ω, CL = 5 pF, f = 1 MHz
VIN = 0 or V+, f = 1 MHz
Room
5
Room
- 73
Room
- 70
dB
pF
Power Supply
Power Supply Range
V+
Power Supply Current
I+
Power Consumption
PC
Document Number: 71347
S-72609-Rev. D, 24-Dec-07
2.7
VIN = 0 or V+
0.01
3.3
V
1.0
µA
0.4
µW
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DG9411
Vishay Siliconix
SPECIFICATIONS V+ = 5 V
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 5 V, ± 10 %
VIN = 0.8 or 2.4 Ve
Limits
- 40 to 85 °C
Tempa
Minb
Full
0
Typc
Maxb
Unit
V+
V
Analog Switch
VNO, VNC
VCOM
Analog Signal Ranged
Drain-Source On-Resistance
rDS(on) Flatnessd
rDS(on)
V+ = 4.5 V, VD = 3 V, IS = 10 mA
Room
Full
7
10
rDS(on)
Flatness
V+ = 2.5 V
Room
2
IS(off)
Switch Off
Leakage Current
V+ = 5.5 V, VS = 1 V/4.5 V, VD = 4.5 V/1 V
ID(off)
Channel-On
Leakage Current
ID(on)
V+ = 5.5 V, VS = VD = 1 V/4.5 V
12
16
Room
Full
- 1.0
- 4.0
1.0
4.0
Room
Full
- 1.0
- 4.0
1.0
4.0
Room
Full
- 1.0
- 3.0
1.0
4.5
2.4
Ω
nA
Digital Control
Input High Voltage
VINH
Full
Input Low Voltage
VINL
Full
Input Capacitance
Cin
IINL or IINH
Input Current
0.8
Full
VIN = 0 or V+
Full
3
-1
V
pF
1
µA
Dynamic Characteristics
Turn-On Timed
tON
Turn-Off Timed
tOFF
Break-Before-Make Timed
td
Charge Injectiond
QINJ
Off-Isolationd
OIRR
d
XTALK
Crosstalk
Source-Off Capacitanced
Channel-On Capacitance
Drain-to-Source
Capacitanced
VD or VS = 3 V, RL = 300 Ω, CL = 35 pF
Figure 1 and 2
CD(on)
9
11
15
Room
Full
5
7
9
ns
10
pC
Room
CL = 1 nF, VS = 0 V, VGEN = 0 V, RGEN = 0 Ω,
Figure 3
RL = 50 Ω, CL = 5 pF, f = 1 MHz
CS(off)
d
Room
Full
VIN = 0 or V+, f = 1 MHz
CDS(off)
1
4
Room
5
Room
- 73
Room
- 70
Room
7
Room
20
Room
20
dB
pF
Power Supply
Power Supply Range
V+
Power Supply Current
I+
Power Consumption
PC
4.5
VIN = 0 or V+
0.01
5.5
V
1.0
µA
0.6
µW
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, nor subjected to production test.
e. VIN = input voltage to perform proper function.
f. Guaranteed by 5 V leakage testing, not production tested.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 71347
S-72609-Rev. D, 24-Dec-07
DG9411
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
rDS(on) - Drain-Source On-Resistance (Ω)
30
25
V+ = 2.5 V
20
15
V+ = 3 V
10
rDS(on) -
V+ = 5 V
5
V+ = 2.5 V
25
20
85 °C
15
85 °C
10
5
40 °C
25 °C
0
0
0
1
2
3
4
0
5
1
2
3
4
5
VD - Analog Voltage (V)
VD - Analog Voltage (V)
rDS(on) vs. Analog Voltage and Temperature
rDS(on) vs. Analog and Power Voltage
100
10 mA
V+ = 5 V
VIN = 0 V
1 mA
10
I+ - Supply Current (nA)
I+ - Supply Current (nA)
25 °C
40 °C
V+ = 5 V
1
0.1
100 µA
10 µA
1 µA
100 pA
10 pA
1 pA
0.01
- 60 - 40 - 20
0
20
40
60
80
1
100 120 140
10
100
1K
10 K
100 K
1M
10 M
Input Switching Frequency (Hz)
Temperature (°C)
Supply Current vs. Input Switching Frequency
Supply Current vs. Temperature
100
100 K
V+ = 5 V
V+ = 5 V
VD, V S = 5 V
ID(off)
1K
Leakage Current (pA)
Leakage Current (pA)
10 K
0
ID(on)
100
- 100
ID(off)
IS(off)
- 200
ID(on)
- 300
- 400
10
- 500
1
- 600
- 50
- 25
0
25
50
75
100
125
Temperature (°C)
Leakage Current vs. Temperature
Document Number: 71347
S-72609-Rev. D, 24-Dec-07
150
0
1
2
3
4
5
6
VD, V S - Analog Voltage (V)
Leakage vs. Analog Voltage
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5
DG9411
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
25
100
Off Isolation
25 °C
20
80
85 °C
15
OIRR, XTALK (dB)
tON, tOFF - Switching Time (nS)
tON
40 °C
tOFF
25 °C
10
85 °C
5
2.5
3.0
3.5
4.0
4.5
5.0
Crosstalk
40
20
- 40 °C
0
2.0
60
V+ = 3 V
RL = 50 Ω
0
10 K
5.5
100 K
1M
V+ - Supply Voltage (V)
Switching Time vs. Temperature and
Supply Voltage
100 M
Crosstalk and Off Isolation vs.
Frequency
3.0
0
2.5
V+ = 3 V
RL = 50 Ω
-1
2.0
Insertion Loss (dB)
VT - Threshold Voltage (V)
10 M
Frequency (Hz)
1.5
1.0
0.5
-2
-3
-4
-5
0.0
-6
0
1
2
3
4
5
6
7
1K
100 K
10 K
1M
10 M
100 M
1G
Frequency (Hz)
V+ - Supply Voltage (V)
Insertion Loss vs. Frequency
Input Switching Threshold vs. Supply Voltage
6
CL = 1 nF
4
Charge Injection (pC)
V+ = 2.5 V
2
V+ = 3 V
0
-2
V+ = 5 V
-4
-6
0
1
2
3
4
5
6
VD - Analog Voltage (V)
Charge Injection vs. Analog Voltage
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Document Number: 71347
S-72609-Rev. D, 24-Dec-07
DG9411
Vishay Siliconix
TEST CIRCUITS
V+
+3V
Logic
Input
V+
0V
Switch Output
COM
NO or NC
Switch
Input
tr <
20 ns
tf < 20 ns
50 %
VOUT
0.9 x V OUT
Switch
Output
IN
Logic
Input
RL
300 Ω
GND
CL
35 pF
0V
tOFF
tON
Logic "1" = Switch On
Logic input waveforms inverted for switches that have
the opposite logic sense.
CL (includes fixture and stray capacitance)
VOUT = VCOM
RL
R L + R ON
Figure 1. Switching Time
V+
Logic
Input
V+
VNO
VNC
0V
COM
NO
tr < 5 ns
tf < 5 ns
3V
VO
NC
RL
300 Ω
IN
CL
35 pF
VNC = V NO
VO
GND
Switch
Output
90 %
0V
tD
tD
CL (includes fixture and stray capacitance)
Figure 2. Break-Before-Make Interval
V+
Rgen
ΔVOUT
V+
NC or NO
COM
VOUT
VOUT
+
IN
Vgen
CL = 1 nF
3V
IN
On
Off
On
GND
Q = ΔVOUT x CL
IN depends on switch configuration: input polarity
determined by sense of switch.
Figure 3. Charge Injection
Document Number: 71347
S-72609-Rev. D, 24-Dec-07
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7
DG9411
Vishay Siliconix
TEST CIRCUITS
V+
10 nF
V+
COM
0 V, 2.4 V
IN
COM
NC or NO
V NC/NO
Off Isolation = 20 log
RL
GND
VCOM
Analyzer
Figure 4. Off-Isolation
V+
10 nF
V+
COM
Meter
IN
0 V, 2.4 V
NC or NO
GND
HP4192A
Impedance
Analyzer
or Equivalent
f = 1 MHz
Figure 5. Channel Off/On Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?71347.
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Document Number: 71347
S-72609-Rev. D, 24-Dec-07
Package Information
Vishay Siliconix
SCĆ70:
6ĆLEADS
MILLIMETERS
6
5
Dim
A
A1
A2
b
c
D
E
E1
e
e1
L
4
E1 E
1
2
3
-B-
e
b
e1
D
-Ac
A2 A
L
A1
Document Number: 71154
06-Jul-01
INCHES
Min
Nom
Max
Min
Nom
Max
0.90
–
1.10
0.035
–
0.043
–
–
0.10
–
–
0.004
0.80
–
1.00
0.031
–
0.039
0.15
–
0.30
0.006
–
0.012
0.10
–
0.25
0.004
–
0.010
1.80
2.00
2.20
0.071
0.079
0.087
1.80
2.10
2.40
0.071
0.083
0.094
1.15
1.25
1.35
0.045
0.049
0.053
0.65BSC
0.026BSC
1.20
1.30
1.40
0.047
0.051
0.055
0.10
0.20
0.30
0.004
0.008
0.012
7_Nom
7_Nom
ECN: S-03946—Rev. B, 09-Jul-01
DWG: 5550
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including but not limited to the warranty expressed therein.
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000
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