DG200B Datasheet

DG200B
Vishay Siliconix
Monolithic Dual SPST CMOS Analog Switch
DESCRIPTION
FEATURES
The DG200B is a dual, single-pole, single-throw analog
switch designed to provide general purpose switching of
analog signals. This device is ideally suited for designs
requiring a wide analog voltage range coupled with low
on-resistance.
•
•
•
•
The DG200B is designed on Vishay Siliconix’ improved
PLUS-40 CMOS process. An epitaxial layer prevents
latchup.
BENEFITS
Each switch conducts equally well in both directions when
on, and blocks up to 30 V peak-to-peak when off. In the on
condition, this bi-directional switch introduces no offset
voltage of its own.
± 15 V Input Signal Range
44 V Maximum Supply Ranges
On-Resistance: 45 Ω
TTL and CMOS Compatibility
Pb-free
Available
RoHS*
COMPLIANT
• Wide Dynamic Range
• Simple Interfacing
• Reduced External Component Count
APPLICATIONS
•
•
•
•
Servo Control Switching
Programmable Gain Amplifiers
Audio Switching
Programmable Filters
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Plastic Dip
TRUTH TABLE
IN1
Logic
13
NC
0
ON
1
OFF
IN2
1
14
NC
2
GND
3
12
V+ Substrate
NC
4
11
NC
S2
5
10
S1
D2
6
9
D1
V–
7
8
NC
Switch
Logic "0" ≤ 0.8 V
Logic "1" ≥ 2.4 V
Top View
ORDERING INFORMATION
Temp Range
Package
Part Number
- 40 to 85 °C
14-Pin Plastic DIP
DG200BDJ
DG200BDJ-E3
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 71357
S-71155–Rev. C, 11-Jun-07
www.vishay.com
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DG200B
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise noted
Parameter
Limit
V+ to VGND to VDigital Inputs
Unit
44
a,
25
(V-) - 2 V to (V+) + 2 V
or 30 mA, whichever occurs first
30
VS, VD
Current (Any Terminal) Continuous
Current S or D
(Pulsed at 1 ms, 10 % Duty Cycle Max)
Storage Temperature
V
mA
100
- 65 to 150
°C
470
mW
14-Pin Plastic DIPc
Power Dissipation (Package)b
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/°C above 25 °C.
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
SX
VL
V-
Level
Shift/
Drive
V+
INX
DX
GND
V-
Figure 1.
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Document Number: 71357
S-71155–Rev. C, 11-Jun-07
DG200B
Vishay Siliconix
SPECIFICATIONSa
Analog Signal Rangee
VANALOG
VD = ± 10 V, IS = - 1 mA
Drain-Source On-Resistance
rDS(on)
Source Off Leakage Current
IS(off)
VS = ± 14 V, VD =
Drain Off Leakage Current
ID(off)
VD = ± 14 V, VS =
Channel On Leakage Currentf
ID(on)
14 V
±
Symbol
±
Parameter
Analog Switch
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
VIN = 2.4 V, 0.8 Vf
14 V
VS = VD = ± 14 V
Limits
- 40 to 85 °C
Tempb
Minc
Full
- 15
Room
Full
Room
Full
Room
Full
Room
Full
-2
- 100
-2
- 100
-2
- 200
Typd
Maxc
Unit
15
V
45
85
100
2
100
2
100
2
200
Ω
± 0.01
± 0.01
± 0.1
nA
Digital Control
Input Current with
Input Voltage High
Input Current with
Input Voltage Low
Dynamic Characteristics
VIN = 15 V
IINL
Turn-On Time
tON
Turn-Off Time
tOFF
Charge Injection
Room
Full
Room
Full
Room
Full
VIN = 2.4 V
IINH
VIN = 0 V
See Switching Time Test Circuit
CL = 1000 pF, Rg = 0 Ω, Vg = 0 V
- 0.5
-1
0.0009
0.005
- 0.5
-1
Room
300
1000
Room
200
425
Room
1
Source Off Capacitance
Drain Off Capacitance
CD(off)
Channel-On Capacitance
CD(on)+
CS(on)
VS = VD = 0 V, VIN = 0 V
Room
16
OIRR
XTALK
VIN = 5 V, RL = 75 Ω
VS = 2 V, f = 1 MHz
Room
90
Room
95
Positive Supply Current
I+
Negative Supply Current
I-
Both Channels On or Off
VIN = 0 V and 5.0 V
Off Isolation
Crosstalk (Channel-to-Channel)
µA
- 0.0015
Q
CS(off)
f = 140 kHz
VIN = 5 V
0.5
1
VS = 0 V
Room
5
VD = 0 V
Room
5
ns
pC
pF
dB
Power Supplies
Room
Room
50
- 10
µA
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 71357
S-71155–Rev. C, 11-Jun-07
www.vishay.com
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DG200B
Vishay Siliconix
r DS(on) - Drain-Source On-Resistance (Ω)
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
110
100
100
90
90
V+ = 15 V
V- = - 15 V
80
±5V
80
70
70
60
± 10 V
60
50
40
r DS(on) -
± 20 V
20
-8
-4
0
4
8
12
16
40
25 °C
30
- 55 °C
20
10
0
- 15
10
- 20 - 16 - 12
85 °C
50
± 15 V
30
125 °C
20
- 10
-5
0
10
15
rDS(on) vs. VD and Temperature
rDS(on) vs. VD and Power Supply Voltages
40
1 nA
V+ = 15 V
V- = - 15 V
VS, V D = ± 14 V
V+ = 22 V
V- = - 22 V
TA = 25 °C
30
I S, I D - Current (pA)
20
I S, I D - Current
5
VD - Drain Voltage (V)
VD - Drain Voltage (V)
100 pA
IS(off), ID(off)
10 pA
ID(on)
10
IS(off), ID(off)
0
- 10
- 20
- 30
1 pA
- 55
- 35
- 15
5
25
45
65
85
- 40
- 20
105 125
- 15
- 10
-5
0
5
10
15
20
Temperature (°C)
Leakage Currents vs. Analog Voltage
Leakage Current vs. Temperature
TEST CIRCUITS
VO is the steady state output with switch on. Feedthrough via gate capacitance may result in spikes at leading and trailing edge
of output waveform.
+ 15 V
Logic
Input
Switch
Input
3V
tr < 20 ns
tf < 20 ns
50 %
0V
VS = + 5 V
tOFF
VS
D
VO
IN
3V
90 %
Switch
Output
V+
S
GND
V-
CL
35 pF
RL
1 kΩ
VO
tON
- 15 V
VO = V S
RL
RL + rDS(on)
Figure 2. Switching Time
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Document Number: 71357
S-71155–Rev. C, 11-Jun-07
DG200B
Vishay Siliconix
TEST CIRCUITS
+ 15 V
ΔVO
Rg
VO
V+
S
D
VO
CL
1000 pF
IN
Vg
3V
INX
ON
OFF
ON
V-
GND
ΔVO = measured voltage error due to charge injection
The charge injection in coulombs is ΔQ = C L x ΔVO
- 15 V
Figure 3. Charge Injection
+ 15 V
C
V+
S
VS
VO
D
Rg = 50 Ω
RL
IN
5V
GND
V-
C
- 15 V
VS
Off Isolation = 20 log
VO
Figure 4. Off Isolation
+ 15 V
C
V+
S1
VS
Rg = 50 Ω
D1
50 Ω
IN1
0V
NC
0V
S2
VO
D2
RL
IN2
GND
V-
C
- 15 V
XTALK = 20 log
VS
VO
C = RF bypass
Figure 5. Channel-to-Channel Crosstalk
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?71357.
Document Number: 71357
S-71155–Rev. C, 11-Jun-07
www.vishay.com
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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