DG469 Datasheet

DG469, DG470
Vishay Siliconix
High Voltage, Single and Dual Supply SPDT Analog Switch
with Enable Pin
DESCRIPTION
FEATURES
The DG469, DG470 are high voltage SPDT switches, with a
typical on resistance of 3.6 Ω and typical flatness of 0.4 Ω.
The DG469, DG470 are identical, except the DG470
provides an enable input. When the enable input is activated,
both sides of the switch are in a high impedance mode (Off),
maintaining a "Safe State" at power up. This function can
also be used as a quick "disconnect" in the event of a fault
condition. For audio switching, the enable pin provides a
mute function. These are high voltage switches that are fully
specified with dual supplies at ± 4.5 V and ± 15 V and a
single supply of 12 V over an operating temperature range
from - 40 °C to + 125 °C. Fast switching speeds coupled with
high signal bandwidth makes these parts suitable for video
switching applications. All digital inputs have 0.8 V and 2.4 V
logic thresholds ensuring low voltage TTL/CMOS
compatibility. Each switch conducts equally well in both
directions when on and can handle an input signal range that
extends to the supply voltage rails. They exhibit breakbefore-make switching action to prevent momentary shorting
when switching between channels. The DG469, DG470 are
offered in a MSOP 8 and SOIC 8 package.
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Low on resistance (3.6 Ω typical)
On resistance flatness (0.4 Ω typical)
44 V supply maximum rating
RoHS
COMPLIANT
± 15 V analog signal range
Fully specified at supply voltages of ± 4.5 V, 12 V and ± 15 V
TTL/CMOS compatible
Break before make switching guaranteed
Total harmonic distortion 0.0145 %
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
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Audio and video signal switching
Precision automatic test equipment
Precision data acquisition
Relay replacement
Communications systems
Automotive applications
Sample and hold systems
Power routing applications
Telecom signal switching
Medical equipment
Portable and battery power systems
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG470
DG469
MSOP 8 and SOIC 8
MSOP 8 and SOIC 8
COM
1
8
NC
2
7 V-
GND
3
6
IN
V+
4
5
No Connect
NO
COM
1
8 NO
NC
2
7 V-
GND
3
6 IN
V+
4
5 EN
Top View
Top View
TRUTH TABLE DG469
TRUTH TABLE DG470
Logic
NC
NO
ENABLE
Logic
NC
NO
0
ON
OFF
0
0
ON
OFF
1
OFF
ON
0
1
OFF
ON
1
X
OFF
OFF
Document Number: 71470
S09-1053-Rev. D, 08-Jun-09
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1
DG469, DG470
Vishay Siliconix
ORDERING INFORMATION
Temp. Range
Package
Part Number
8-Pin MSOP
DG469EQ-T1-E3
DG470EQ-T1-E3
8-Pin Narrow SOIC
DG469EY-T1-E3
DG470EY-T1-E3
DG469, DG470
- 40 °C to 125 °Ca
Notes:
a. - 40 °C to 85 °C datasheet limits apply.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Limit
V+ to VGND to VDigital
Inputsa
Unit
44
25
V
(V-) - 2 to (V+) + 2
or 30 mA, whichever occurs first
, VS, VD
Continuous Current (NO, NC, or COM)
120
Current (Any terminal except NO, NC, or COM)
30
Peak Current, (Pulsed 1 ms, 10 % Duty Cycle)
200
Storage Temperature
mA
- 65 to 150
Power Dissipation (Package)b
8-Pin MSOPc
320
8-Pin Narrow SOICd
400
°C
mW
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 4.0 mW/°C above 70 °C.
d. Derate 5.0 mW/°C above 70 °C.
SPECIFICATIONS for Dual Supplies
Parameter
Symbol
Test Conditions
Unless Specified
V+ = 15 V, V- = - 15 V
VIN = 2.4 V, 0.8 Va
- 40 °C to 125 °C - 40 °C to 85 °C
Temp.b
Typ.c
Min.d
Max.d
Min.d
Max.d
Unit
- 15
15
- 15
15
V
Analog Switch
Analog Signal Rangee
On-Resistance
On-Resistance Match
On-Resistance Flatness
Switch Off
Leakage Current
Channel On
Leakage Current
VANALOG
Full
RON
IS = 50 mA, VD = - 10 V to + 10 V
Room
Full
3.6
6
8
6
7
ΔRON
IS = 50 mA, VD = ± 10 V
Room
Full
0.12
0.4
0.9
0.4
0.5
RFLATNESS
IS = 50 mA, VD = - 5 V, 0 V, + 5 V
Room
Full
0.4
0.5
0.9
0.5
0.8
Room
Full
± 0.1
- 0.5
- 20
0.5
20
- 0.5
- 2.5
0.5
2.5
Room
Full
± 0.1
- 0.5
- 20
0.5
20
- 0.5
- 2.5
0.5
2.5
IS(off)
VD = ± 14 V, VS = ± 14 V
ID(off)
ID(on)
VS = VD = ± 14 V
Room
Full
± 0.2
- 0.5
- 20
0.5
20
- 0.5
-5
0.5
5
Input Current, VIN Low
IIL
VIN Under Test = 0.8 V
Full
0.05
-1
1
-1
1
Input Current, VIN High
IIH
VIN Under Test = 2.4 V
Full
0.05
-1
1
-1
1
Input Capacitancee
CIN
f = 1 MHz
Room
3.7
Ω
nA
Digital Control
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2
µA
pF
Document Number: 71470
S09-1053-Rev. D, 08-Jun-09
DG469, DG470
Vishay Siliconix
SPECIFICATIONS for Dual Supplies
Parameter
Test Conditions
Unless Specified
V+ = 15 V, V- = - 15 V
VIN = 2.4 V, 0.8 Va
Symbol
- 40 °C to 125 °C - 40 °C to 85 °C
Temp.b
Typ.c
Min.d
Max.d
Min.d
Max.d
Room
Full
129
166
200
166
185
Room
Full
80
108
135
108
120
Room
15
Unit
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Break-Before-Make
Time Delay
Charge Injectione
Off Isolation
e
RL = 300 Ω, CL = 35 pF
VS = ± 10 V
tD
VS = 10 V
RL = 300 Ω, CL = 35 pF
Q
Vg = 0 V, Rg = 0 Ω, CL = 1 nF
OIRR
Channel-to-Channel
Crosstalke
XTALK
Source Off Capacitancee
CS(off)
Capacitancee
RL = 50 Ω, CL = 5 pF
f = 1 MHz
CD(off)
58
- 57
Room
- 63
Room
37
pC
dB
Room
85
CD(on)
Room
125
Power Supply Current
I+
Room
Full
3.0
Negative Supply Current
I-
Room
Full
- 0.4
- 0.5
- 4.5
- 0.5
- 4.5
Room
Full
- 3.0
-6
-7
-6
-7
Drain Off
Channel On Capacitance
e
f = 1 MHz
Room
Room
ns
pF
Power Supplies
Ground Current
V+ = 16.5 V, V- = - 16.5 V
VIN = 0 or 5 V
IGND
6
7
6
7
µA
SPECIFICATIONS for Dual Supplies
Test Conditions
Unless Specified
V+ = 4.5 V, V- = - 4.5 V
VIN = 2.4 V, 0.8 Va
Temp.b
VANALOG
Full
RON
IS = 50 mA, VD = - 2 V to + 2 V
Room
Full
8
11
16
11
15
ΔRON
IS = 50 mA, VD = ± 2 V
Room
Full
0.6
0.7
0.9
0.7
0.8
Turn-On Timee
tON
Room
Full
245
265
340
65
310
Turn-Off Timee
tOFF
RL = 300 Ω, CL = 35 pF
VS = 2 V
Room
Full
145
163
200
163
185
Parameter
Symbol
- 45 °C to 125 °C - 40 °C to 85 °C
Typ.c
Min.d
Max.d
Min.d
Max.d
Unit
- 4.5
4.5
- 4.5
4.5
V
Analog Switch
Analog Signal Rangee
On-Resistancee
On-Resistance Matche
Ω
Dynamic Characteristics
Break-Before-Makee
Time Delay
tD
VS = 2 V
RL = 300 Ω, CL = 35 pF
Room
Full
15
Charge Injectione
Q
Vg = 0 V, Rg = 0 Ω, CL = 1 nF
Full
58
Room
Full
3.0
Room
Full
- 0.4
- 0.5
- 4.5
- 0.5
- 4.5
Room
Full
3.0
-6
-7
-6
-7
ns
pC
Power Supplies
Power Supply Currente
I+
Negative Supply Currente
I-
Ground Currente
Document Number: 71470
S09-1053-Rev. D, 08-Jun-09
IGND
VIN = 0 or 4.5 V
6
7
6
7
µA
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DG469, DG470
Vishay Siliconix
SPECIFICATIONS for Unipolar Supplies
Parameter
Test Conditions
Unless Specified
V+ = 12 V, V- = 0 V
VIN = 2.4 V, 0.8 Va
Temp.b
VANALOG
Full
RON
IS = 25 mA, VD = 0 V to + 10 V
Room
Full
7.5
ΔRON
IS = 25 mA, VD = + 10 V
Room
Full
0.4
0.45
0.9
0.45
0.5
RFLATNESS
IS = 25 mA,
VD = 0 V, + 5 V, + 10 V
Room
Full
2.5
2.6
2.9
2.6
2.8
Room
Full
190
200
255
200
240
Room
Full
100
110
135
110
120
Symbol
- 40 °C to 125 °C - 40 °C to 85 °C
Typ.c
Min.d
Max.d
Min.d
Max.d
Unit
12
12
V
8.5
14
8.5
11.3
Analog Switch
Analog Signal Rangee
On-Resistance
On-Resistance Match
On-Resistance Flatness
Ω
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
RL = 300 Ω, CL = 35 pF
VS = 10 V
Break-Before-Make
Time Delay
tD
VS = 10 V
RL = 300 Ω, CL = 35 pF
Room
50
Charge Injectione
Q
Vg = 0 V, Rg = 0 Ω, CL = 1 nF
Room
2.4
Room
Full
3.0
Room
Full
- 0.4
- 0.5
- 4.5
- 0.5
- 4.5
Room
Full
- 3.0
-6
-7
-6
-7
ns
pC
Power Supplies
Power Supply Current
I+
Negative Supply Current
I-
Ground Current
IGND
VIN = 0 or 5 V
6
7
6
7
µA
Notes:
a. VIN = input voltage to perform proper function.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 71470
S09-1053-Rev. D, 08-Jun-09
DG469, DG470
Vishay Siliconix
TYPICAL CHARACTERISTICS
14
12
TA = 25 °C
IS = 50 mA
13
± 4.5
+/4.5V
R ON - On-Resistance (Ω)
R ON - On-Resistance (Ω)
10
8
± 10.0 V
± 10.0 V
± 12.0 V
± 13.5 V
± 15.0 V
± 20.0 V
6
4
TA = 25 °C
IS = 25 mA
+ 7.0 V
12
+ 9.0 V
11
+ 10.8 V
10
+ 12.0 V
9
8
+ 20.0 V
7
+ 24.0 V
6
+ 36.0 V
5
4
3
2
- 20
2
- 15
- 10
-5
0
5
10
15
0
20
8
16
20
24
28
32
36
VCOM - Analog Voltage (V)
On-Resistance vs. VD and Single Supply Voltage
12
7
10
+ 125 °C
R ON - On-Resistance (Ω)
6
+ 125 °C
5
+ 85 °C
4
+ 25 °C
3
- 40 °C
2
- 55 °C
V+ = + 15 V
V- = - 15 V
IS = 50 mA
1
0
- 15
8
+ 85 °C
6
+ 25 °C
- 40 °C
4
- 55 °C
0
- 10
-5
0
5
10
V+ = + 12 V
V- = 0 V
IS = 25 mA
2
15
0
2
4
6
8
10
12
VCOM - Analog Voltage (V)
VCOM - Analog Voltage (V)
On-Resistance vs. VD and Temperature
On-Resistance vs. VD and Temperature
100 000
100 000
V+ = + 15 V
V- = - 15 V
V+ = + 12 V
V- = - 12 V
ID(on)
ID(off)
1000
IS(off)
100
10
- 60 - 40 - 20
0
20
40
60
80
100 120 140
Temperature (°C)
Leakage Current vs. Temperature
Document Number: 71470
S09-1053-Rev. D, 08-Jun-09
ID(on)
10 000
Leakage Current (pA)
10 000
Leakage Current (pA)
12
On-Resistance vs. VD and Dual Supply Voltage
8
R ON - On-Resistance (Ω)
4
VCOM - Analog Voltage (V)
ID(off)
1000
IS(off)
100
10
- 60 - 40 - 20
0
20
40
60
80
100 120 140
Temperature (°C)
Leakage Current vs. Temperature
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DG469, DG470
Vishay Siliconix
TYPICAL CHARACTERISTICS
300
200
CL = 1 nF
T = 25 °C
150
200
50
tON/tOFF (s)
Q - Charge Injection (pC)
250
V+ = + 12 V
V- = 0 V
100
0
- 50
t ON
150
100
- 100
- 150
- 200
t OFF
50
0
1
2
3
4
5
6
7
8
9
10
11
0
12
4
8
12
VCOM - Analog Voltage (V)
20
24
28
32
36
Supply Voltage (V)
Switching Time vs. Single Supply Voltage
Charge Injection vs. Analog Voltage
350
300
CL = 1 nF
300
250
250
V+ = + 5 V
V- = - 15 V
200
150
t ON , V+ = 7 V
200
100
tON/tOFF (ns)
Q - Charge Injection (pC)
16
50
0
- 50
- 100
t ON , V+ = 12 V
150
100
- 150
t OFF , V+ = 7 V
- 200
- 250
50
t OFF , V+ = 12 V
- 300
- 350
- 15
- 10
-5
0
5
VCOM - Analog Voltage (V)
10
0
- 55
15
- 40
25
85
125
Temperature (°C)
Switching Time vs. Temperature and
Single Supply Voltage
Charge Injection vs. Analog Voltage
350
300
T = 25 °C
300
250
250
200
tON/tOFF (s)
tON/tOFF (ns)
t ON, V ± = ± 4.5 V
200
150
t ON, V ± = ± 15 V
t ON
150
100
100
50
t OFF, V ± = ± 4.5 V
t OFF, V ± = ± 15 V
0
- 55
0
- 40
25
Temperature (°C)
85
Switching Time vs. Temperature and
Dual Supply Voltage
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6
t OFF
50
125
4
6
8
10
12
14
16
18
20
Supply Voltage (V)
Switching Time vs. Dual Supply Voltage
Document Number: 71470
S09-1053-Rev. D, 08-Jun-09
DG469, DG470
Vishay Siliconix
TYPICAL CHARACTERISTICS
1.8
0
BW
- 10
1.6
- 30
- 40
dB
OIRR
- 50
- 60
1.4
VT - Switching Threshold (V)
- 20
XTALK
- 70
1.2
1.0
0.8
0.6
0.4
0.2
- 80
- 90
0 Hz
0
300 kHz
1 MHz
10 MHz
100 MHz
1 GHz
4
8
12
Frequency (Hz)
16
20
24
28
32
36
V+ - Supply Voltage (V)
Insertion Loss, Off-Isolation, Crosstalk
vs. Frequency
Switching Threshold vs. Signal Supply Voltage
1.8
1
1.4
+ 12 V
1.2
0.1
THD (%)
VT - Switching Threshold (V)
1.6
1.0
0.8
± 15 V
0.6
0.01
0.4
0.2
± 10 V
0
4
6
8
10
12
14
16
18
20
0.001
10
100
1000
10 000
100 000
Frequency (Hz)
V+ - Supply Voltage (V)
Switching Threshold vs. Dual Supply Voltage
DG469, DG470 Total Harmonic Distortion
TEST CIRCUITS
+ 15 V
3V
Logic
Input
tr < 5 ns
tf < 5 ns
50 %
V+
10 V
S
0V
D
IN
GND
tOFF
VO
RL
300
V-
CL
35 pF
Switch
Input
VS
VO
90 %
90 %
0V
tON
- 15 V
CL (includes fixture and stray capacitance)
VO = VS
RL
Note:
Logic input waveform is inverted for switches that have the
opposite logic sense control.
RL + rDS(on)
Figure 1. Switching Time
Document Number: 71470
S09-1053-Rev. D, 08-Jun-09
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DG469, DG470
Vishay Siliconix
TEST CIRCUITS
V+
Logic
Input
V+
VNO
VNC
VINL
COM
NO
tr < 5 ns
tf < 5 ns
VINH
VO
NC
RL
50 Ω
IN
VNC = VNO
VO
CL
35 pF
Switch
Output
V-
GND
90 %
0V
tD
tD
- 15 V
CL (includes fixture and stray capacitance)
Figure 2. Break-Before-Make
ΔVO
Switch under test
NO
NC
VINH or VINL
IN
VINH
VINL
+ 15 V
IN
Rg
VO
EN X
V+
ON
OFF
VO
EN
Vg
OFF
NO or NC
COM
CL
1 nF
3V
V-
GND
EN X
OFF
ON
Q = ΔVO x CL
OFF
- 15 V
Figure 3. Charge Injection
+ 15 V
+ 15 V
C
V+
S
VS
C
VO
D
V+
Rg = 50 Ω
S
RL
50 Ω
IN
0 V, 2.4 V
Meter
0 V, 2.4 V
GND
V-
C
IN
HP4192A
Impedance
Analyzer
or Equivalent
D
- 15 V
Off Isolation = 20 log
GND
V-
C
VO
VS
C = RF Bypass
Figure 4. Off-Isolation
- 15 V
Figure 5. Source/Drain Capacitances
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71470.
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Document Number: 71470
S09-1053-Rev. D, 08-Jun-09
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Document Number: 91000
Revision: 18-Jul-08
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