DG2012 Datasheet

DG2012
Vishay Siliconix
Low-Voltage Single SPDT Analog Switch
DESCRIPTION
FEATURES
The DG2012 is a single-pole/double-throw monolithic CMOS
analog switch designed for high performance switching of
analog signals. Combining low power, high speed
(tON: 17 ns, tOFF: 13 ns), low on-resistance (rDS(on): 1 Ω) and
small physical size (SC70), the DG2012 is ideal for portable
and battery powered applications requiring high
performance and efficient use of board space.
•
•
•
•
•
•
The DG2012 is built on Vishay Siliconix’s low voltage
submicron CMOS process. An epitaxial layer prevents
latchup. Break-before -make is guaranteed for DG2012.
BENEFITS
Each switch conducts equally well in both directions when
on, and blocks up to the power supply level when off.
•
•
•
•
Low Voltage Operation (1.8 V to 5.5 V)
Low On-Resistance - rDS(on): 1 Ω Typ.
Fast Switching - tON: 17 ns, tOFF: 13 ns
Low Leakage
TTL/CMOS Compatible
6-Pin SC-70 Package
Pb-free
Available
RoHS*
COMPLIANT
Reduced Power Consumption
Simple Logic Interface
High Accuracy
Reduce Board Space
APPLICATIONS
•
•
•
•
•
Cellular Phones
Communication Systems
Portable Test Equipment
Battery Operated Systems
Sample and Hold Circuits
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
TRUTH TABLE
SC-70
IN
1
6
NO (Source1)
V+
2
5
COM
GND
3
4
NC (Source2)
Top View
Device Marking: E7xx
Logic
NC
NO
0
ON
OFF
1
OFF
ON
ORDERING INFORMATION
Temp Range
Package
- 40 to 85 °C
SC70-6
Part Number
DG2012DL-T1
DG2012DL-T1-E3
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 72176
S-70852-Rev. B, 30-Apr-07
www.vishay.com
1
DG2012
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
Referenced V+ to GND
Unit
- 0.3 to + 6
IN, COM, NC, NOa
V
- 0.3 to (V+ + 0.3)
Continuous Current (NO, NC and COM Pins)
± 100
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
± 300
Storage Temperature (D Suffix)
Power Dissipation (Packages)b
mA
- 65 to 150
°C
250
mW
6-Pin SO70c
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 3.1 mW/°C above 70 °C.
SPECIFICATIONS (V+ = 2.0 V)
Parameter
Symbol
Test Conditions
Otherwise Unless Specified
V+ = 2.0 V, ± 10 %, VIN = 0.4 or 1.6 Ve
Limits
- 40 to 85 °C
Tempa
Minb
Full
0
Typc
Maxb
Unit
V+
V
Analog Switch
VNO, VNC
VCOM
Analog Signal Ranged
rON
On-Resistance
rON
Flatness
rON Flatnessd
ΔrON
rON Matchd
Switch Off Leakage Current
f
INO(off)
INC(off)
ICOM(off)
Channel-On Leakage Currentf
ICOM(on)
V+ = 1.8 V, VCOM = 0.2 V/0.9 V
INO, INC = 10 mA
V+ = 1.8 V, VCOM = 0 to V+, INO, INC = 10 mA
V+ = 2.2 V
VNO, VNC = 0.5 V/1.5 V, VCOM = 1.5 V/0.5 V
V+ = 2.2 V, VNO, VNC = VCOM = 0.5 V/1.5 V
Room
Fulld
2.7
2.7
5.3
5.3
Room
3
Room
0.25
Room
Full
- 0.5
- 5.0
0.5
5.0
Room
Fulld
- 0.5
- 5.0
0.5
5.0
Room
Fulld
- 0.5
- 5.0
0.5
5.0
1.6
Ω
nA
Digital Control
Input High Voltage
VINH
Full
Input Low Voltage
VINL
Full
Input Capacitanced
f
Cin
IINL or IINH
Input Current
0.4
Full
VIN = 0 or V+
Full
3
-1
V
pF
1
µA
Dynamic Characteristics
Turn-On Timed
tON
Turn-Off Timed
tOFF
Break-Before-Make Timed
Charge Injection
d
d
td
QINJ
Off-Isolation
OIRR
Crosstalkd
XTALK
NO, NC Off Capacitanced
Channel-On Capacitanced
www.vishay.com
2
VNO or VNC = 1.5 V, RL = 300 Ω, CL = 35 pF
Figures 1 and 2
CNO(off)
CNC(off)
CON
Room
Fulld
43
63
65
Room
Fulld
23
45
46
Room
CL = 1 nF, VGEN = 0 V, RGEN = 0 Ω, Figure 3
RL = 50 Ω, CL = 5 pF, f = 1 MHz
VIN = 0 or V+, f = 1 MHz
ns
2
Room
7
Room
- 63
Room
- 64
Room
22
Room
58
pC
dB
pF
Document Number: 72176
S-70852-Rev. B, 30-Apr-07
DG2012
Vishay Siliconix
SPECIFICATIONS (V+ = 3.0 V)
Parameter
Symbol
Test Conditions
Otherwise Unless Specified
V+ = 3 V, ± 10 %, VIN = 0.6 or 2.0 Ve
Limits
- 40 to 85 °C
Tempa
Minb
Full
0
Typc
Maxb
Unit
V+
V
Analog Switch
Analog Signal Ranged
VNO, VNC
VCOM
rON
On-Resistance
rON
Flatness
rON Flatness
ΔrON
rON MatchFlat
Switch Off Leakage Currentf
INO(off)
INC(off)
ICOM(off)
Channel-On Leakage Currentf
ICOM(on)
V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO
INC = 10 mA
V+ = 2.7 V, VCOM = 0 to V+, INO, INC = 10 mA
Room
Full
1.4
1.6
Room
0.85
Room
V+ = 3.3 V
VNO, VNC = 1 V/3 V, VCOM = 3 V/1 V
V+ = 3.3 V, VNO, VNC = VCOM = 1 V/3 V
2.1
2.3
Ω
0.25
Room
Full
- 0.5
- 5.0
0.5
5.0
Room
Full
- 0.5
- 5.0
0.5
5.0
Room
Full
- 0.5
- 5.0
0.5
5.0
2
nA
Digital Control
Input High Voltage
VINH
Full
Input Low Voltage
VINL
Full
Input Capacitanced
Cin
Input Currentf
IINL or IINH
0.6
Full
VIN = 0 or V+
Full
3
-1
V
pF
1
µA
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Break-Before-Make Time
Charge Injection
Off-Isolation
d
d
Crosstalkd
27
VNO or VNC = 2.0 V, RL = 300 Ω, CL = 35 pF
Figures 1 and 2
Room
Full
47
48
Room
Full
17
37
38
CL = 1 nF, VGEN = 0 V, RGEN = 0 Ω, Figure 3
Room
10
Room
- 63
Room
- 64
Room
21
Room
57
td
QINJ
OIRR
XTALK
NO, NC Off Capacitanced
CNO(off)
CNC(off)
Channel-On Capacitanced
CON
Room
RL = 50 Ω, CL = 5 pF, f = 1 MHz
VIN = 0 or V+, f = 1 MHz
ns
1
pC
dB
pF
Power Supply
Power Supply Range
Power Supply Current
Document Number: 72176
S-70852-Rev. B, 30-Apr-07
V+
I+
1.8
VIN = 0 or V+
0.01
5.5
V
1.0
µA
www.vishay.com
3
DG2012
Vishay Siliconix
SPECIFICATIONS (V+ = 5.0 V)
Parameter
Symbol
Test Conditions
Otherwise Unless Specified
V+ = 5 V, ± 10 %, VIN = 0.8 or 2.4 Ve
Limits
- 40 to 85 °C
Tempa
Minb
Full
0
Typc
Maxb
Unit
V+
V
Analog Switch
Analog Signal Ranged
VNO, VNC
VCOM
rON
On-Resistance
rON
Flatness
rON Flatnessd
ΔrON
rON Matchd
Switch Off Leakage Current
INO(off)
INC(off)
ICOM(off)
Channel-On Leakage Current
ICOM(on)
V+ = 4.5 V, VCOM = 0.5 V/2.5 V
INO, INC = 10 mA
V+ = 4.5 V, VCOM = 0 to V+, INO, INC = 10 mA
V+ = 5.0 V
VNO, VNC = 0.5 V/4.5 V, VCOM = 4.5 V/0.5 V
V+ = 5.0 V, VNO, VNC = VCOM = 0.5 V/4.5 V
Room
Full
1.0
1.2
1.8
1.9
Room
0.55
Room
0.25
Room
Full
- 0.5
- 5.0
0.5
5.0
Room
Full
- 0.5
- 5.0
0.5
5.0
Room
Full
- 0.5
- 5.0
0.5
5.0
2.4
Ω
nA
Digital Control
Input High Voltage
VINH
Full
Input Low Voltage
VINL
Full
Input Capacitance
Cin
IINL or IINH
Input Current
0.8
Full
VIN = 0 or V+
Full
3
-1
V
pF
1
µA
Dynamic Characteristics
Turn-On Timed
tON
Turn-Off Timed
tOFF
Break-Before-Make Timed
Charge Injection
d
d
td
QINJ
Off-Isolation
OIRR
Crosstalkd
XTALK
Source-Off Capacitanced
Channel-On
Capacitanced
VNO or VNC = 3 V, RL = 300 Ω, CL = 35 pF
Figures 1 and 2
CNO(off)
CNC(off)
CON
Room
Full
17
38
39
Room
Full
13
32
33
Room
CL = 1 nF, VGEN = 0 V, RGEN = 0 Ω, Figure 3
RL = 50 Ω, CL = 5 pF, f = 1 MHz
VIN = 0 or V+, f = 1 MHz
ns
1
Room
20
Room
- 63
Room
- 64
Room
20
Room
56
pC
dB
pF
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, nor subjected to production test.
e. VIN = input voltage to perform proper function.
f. Guaranteed by 5 V leakage testing, not production tested.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
4
Document Number: 72176
S-70852-Rev. B, 30-Apr-07
DG2012
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
6
6
IS = 10 mA
IS = 10 mA
5
r ON - On-Resistance (Ω)
r ON - On-Resistance (Ω)
5
4
V+ = 1.8 V
3
V+ = 2 V
2
V+ = 3 V
V+ = 5 V
4
V+ = 2 V
85 °C
25 °C V+ = 3 V
85 °C
- 40 °C
25 °C
- 40 °C
3
2
1
1
0
0
V+ = 5 V
85 °C
25 °C
- 40 °C
0
1
2
3
4
0
5
1
2
4
5
VCOM - Analog Voltage (V)
VCOM - Analog Voltage (V)
rON vs. Analog Voltage and Temperature
rON vs. VCOM and Supply Voltage
10 m
10000
V+ = 5 V
VIN = 0 V
V+ = 3 V
1m
100 µ
1000
I+ - Supply Current (A)
I+ - Supply Current (nA)
3
100
10
10 µ
1µ
100 n
10 n
1n
1
- 60
100 p
- 40
- 20
0
20
40
60
80
100
10
Temperature (°C)
100
1K
10 K
100 K
1M
10 M
Input Switching Frequency (Hz)
Supply Current vs. Temperature
Supply Current vs. Input Switching Frequency
250
1000
V+ = 5 V
V+ = 5 V
T = 25 °C
200
150
INO(off)/INC(off)
10
Leakage Current (pA)
Leakage Current (pA)
100
ICOM(on)
ICOM(off)
100
50
ICOM(on)
0
- 50
INO(off)/INC(off)
- 100
1
- 150
ICOM(off)
0.1
- 60
- 200
- 250
- 40
- 20
0
20
40
60
Temperature (°C)
Leakage Current vs. Temperature
Document Number: 72176
S-70852-Rev. B, 30-Apr-07
80
100
0
1
2
3
4
5
VCOM, V NO, V NC - Analog Voltage
Leakage vs. Analog Voltage
www.vishay.com
5
DG2012
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
t ON,
10
tON V+ = 2 V
45
0
40
- 10
Loss, OIRR, XTALK (dB)
t OFF - Switching Time (ns)
50
35
tON V+ = 3 V
30
25
tOFF V+ = 2 V
20
tOFF V+ = 3 V
15
tON V+ = 5 V
10
tOFF V+ = 5 V
LOSS
- 20
- 30
- 40
OIRR
- 50
XTALK
- 60
- 70
5
- 80
0
- 60
- 40
- 20
0
20
40
60
80
- 90
100 K
100
1M
Temperature (°C)
10 M
100 M
1G
Frequency (Hz)
Switching Time vs. Temperature
and Supply Voltage
Insertion Loss, Off-Isolation
Crosstalk vs. Frequency
3.0
30
2.5
20
Q - Charge Injection (pC)
V T - Switching Threshold (V)
V+ = 5 V
RL = 50 Ω
2.0
1.5
1.0
V+ = 5 V
10
V+ = 3 V
0
V+ = 2 V
- 10
- 20
0.5
- 30
0.0
0
www.vishay.com
6
1
2
3
4
5
6
7
0
1
2
3
4
5
V+ - Supply Voltage (V)
VCOM - Analog Voltage (v)
Switching Threshold vs. Supply Voltage
Charge Injection vs. Analog Voltage
6
Document Number: 72176
S-70852-Rev. B, 30-Apr-07
DG2012
Vishay Siliconix
TEST CIRCUITS
V+
VINH
Logic
Input
VINL
V+
Switch
Input
Switch Output
COM
NO or NC
tr < 5 ns
tf < 5 ns
50 %
VOUT
0.9 x VOUT
Switch
Output
IN
Logic
Input
RL
300 Ω
GND
CL
35 pF
0V
tOFF
tON
Logic "1" = Switch On
Logic input waveforms inverted for switches that have
the opposite logic sense.
CL (includes fixture and stray capacitance)
RL
VOUT = VCOM
R L + R ON
Figure 1. Switching Time
V+
Logic
Input
V+
tr < 5 ns
tf < 5 ns
VINL
COM
NO
VNO
VINH
VO
NC
VNC
RL
300 Ω
IN
CL
35 pF
VNC = VNO
VO
GND
Switch
Output
90 %
0V
tD
tD
CL (includes fixture and stray capacitance)
Figure 2. Break-Before-Make Interval
V+
Rgen
ΔVOUT
V+
COM
NC or NO
VOUT
VOUT
+
Vgen
IN
CL = 1 nF
IN
On
Off
On
GND
Q = ΔVOUT x CL
VIN = 0 - V+
IN depends on switch configuration: input polarity
determined by sense of switch.
Figure 3. Charge Injection
Document Number: 72176
S-70852-Rev. B, 30-Apr-07
www.vishay.com
7
DG2012
Vishay Siliconix
TEST CIRCUITS
V+
10 nF
V+
NC or NO
0 V, 2.4 V
IN
COM
RL
V COM
Off Isolation = 20 log V
NO/ NC
GND
Analyzer
Figure 4. Off-Isolation
V+
10 nF
V+
COM
Meter
IN
0 V, 2.4 V
NC or NO
GND
HP4192A
Impedance
Analyzer
or Equivalent
f = 1 MHz
Figure 5. Channel Off/On Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?72176.
www.vishay.com
8
Document Number: 72176
S-70852-Rev. B, 30-Apr-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
Similar pages