Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D102
BZB784 series
Voltage regulator double diodes
Product data sheet
Supersedes data of 2000 May 24
2001 Feb 27
NXP Semiconductors
Product data sheet
Voltage regulator double diodes
BZB784 series
FEATURES
PINNING SOT323 (SC-70)
• Total power dissipation: max. 350 mW
PIN
DESCRIPTION
• Approx. 5% VZ tolerance
1
cathode
• Working voltage range: nom. 2.4 to 15 V (E24 range).
2
cathode
3
common anode
APPLICATIONS
• General regulation functions
handbook, halfpage
• ESD and surge protection.
3
3
DESCRIPTION
1
2
Low-power voltage regulator diodes in a small SOT323
(SC-70) package.
1
2
MAM407
Top view
Fig.1 Simplified outline and symbol.
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BZB784-C2V4
91
BZB784-C3V9
96
BZB784-C6V2
9B
BZB784-C10
9G
BZB784-C2V7
92
BZB784-C4V3
97
BZB784-C6V8
9C
BZB784-C11
9H
BZB784-C3V0
93
BZB784-C4V7
98
BZB784-C7V5
9D
BZB784-C12
9J
BZB784-C3V3
94
BZB784-C5V1
99
BZB784-C8V2
9E
BZB784-C13
9K
BZB784-C3V6
95
BZB784-C5V6
9A
BZB784-C9V1
9F
BZB784-C15
9L
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
MAX.
200
UNIT
IF
continuous forward current
mA
IZSM
non-repetitive peak reverse current
tp = 100 μs; square wave;
Tamb = 25 °C; prior to surge
see Table 1
Ptot
total power dissipation; note 1
Tamb = 25 °C; 2 diodes loaded
−
350
mW
Tamb = 25 °C; 1 diode loaded
−
180
mW
tp = 100 μs; square wave;
Tamb = 25 °C; prior to surge
−
40
W
PZSM
non-repetitive peak reverse
dissipation
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Note
1. Device mounted on an FR4 printed-circuit board.
2001 Feb 27
2
NXP Semiconductors
Product data sheet
Voltage regulator double diodes
BZB784 series
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to soldering point
thermal resistance from junction to ambient
VALUE
UNIT
2 diodes loaded; note 1
140
K/W
1 diode loaded; note 1
265
K/W
2 diodes loaded; note 2
355
K/W
1 diode loaded; note 2
680
K/W
Notes
1. Solder points on cathode tabs.
2. Device mounted on a FR4 printed-circuit board.
ELECTRICAL CHARACTERISTICS
Total BZB784-C series
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
IR
reverse current
2001 Feb 27
CONDITIONS
MAX.
UNIT
IF = 10 mA; see Fig.2
0.9
V
BZB784-C2V4
VR = 1 V
50
μA
BZB784-C2V7
VR = 1 V
20
μA
BZB784-C3V0
VR = 1 V
10
μA
BZB784-C3V3
VR = 1 V
5
μA
BZB784-C3V6
VR = 1 V
5
μA
BZB784-C3V9
VR = 1 V
3
μA
BZB784-C4V3
VR = 1 V
3
μA
BZB784-C4V7
VR = 2 V
3
μA
BZB784-C5V1
VR = 2 V
2
μA
BZB784-C5V6
VR = 2 V
1
μA
BZB784-C6V2
VR = 4 V
3
μA
BZB784-C6V8
VR = 4 V
2
μA
BZB784-C7V5
VR = 5 V
1
μA
BZB784-C8V2
VR = 5 V
700
nA
BZB784-C9V1
VR = 6 V
500
nA
BZB784-C10
VR = 7 V
200
nA
BZB784-C11
VR = 8 V
100
nA
BZB784-C12
VR = 8 V
100
nA
BZB784-C13
VR = 8 V
100
nA
BZB784-C15
VR = 10.5V
50
nA
3
Tol. ≈5%
DIFFERENTIAL RESISTANCE
rdif (Ω)
at IZ = 1 mA
MIN.
MAX.
TYP.
MAX.
2V4
2.2
2.6
275
600
2V7
2.5
2.9
300
3V0
2.8
3.2
3V3
3.1
3.5
3V6
3.4
3V9
at IZ = 5 mA
TYP.
TEMP.
DIODE CAP.
COEFFICIENT
Cd (pF)
SZ (mV/K)
at f = 1 MHz;
at IZtest = 5 mA
VR = 0 V
(see Figs 3 and 4)
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A) at tp = 100 μs;
Tamb = 25 °C
4
TYP.
MAX.
MAX.
70
100
−1.3
450
6.0
600
75
100
−1.4
450
6.0
325
600
80
95
−1.6
450
6.0
350
600
85
95
−1.8
450
6.0
3.8
375
600
85
90
−1.9
450
6.0
3.7
4.1
400
600
85
90
−1.9
450
6.0
4V3
4.0
4.6
410
600
80
90
−1.7
450
6.0
4V7
4.4
5.0
425
500
50
80
−1.2
300
6.0
5V1
4.8
5.4
400
480
40
60
−0.5
300
6.0
5V6
5.2
6.0
80
400
15
40
1.0
300
6.0
6V2
5.8
6.6
40
150
6
10
2.2
200
6.0
6V8
6.4
7.2
30
80
6
15
3.0
200
6.0
7V5
7.0
7.9
30
80
6
15
3.6
150
4.0
8V2
7.7
8.7
40
80
6
15
4.3
150
4.0
9V1
8.5
9.6
40
100
6
15
5.2
150
3.0
10
9.4
10.6
50
150
8
20
6.0
90
3.0
11
10.4
11.6
50
150
10
20
6.9
90
2.5
12
11.4
12.7
50
150
10
25
7.9
85
2.5
13
12.4
14.1
50
170
10
30
8.8
80
2.5
15
13.8
15.6
50
200
10
30
10.7
75
2.0
Product data sheet
BZB784 series
MAX.
NXP Semiconductors
BZB784-C
XXX
WORKING
VOLTAGE
VZ (V)
at IZ = 5 mA
Voltage regulator double diodes
2001 Feb 27
Table 1 Per type BZB784-C2V4 to C15
Tj = 25 °C; unless otherwise specified.
NXP Semiconductors
Product data sheet
Voltage regulator double diodes
BZB784 series
GRAPHICAL DATA
MLD362
300
MLD363
0.5
handbook, halfpage
handbook, halfpage
SZ
(mV/K)
IF
(mA)
4V7
0
4V3
200
−0.5
2V4
2V7
3V9
−1
100
3V6
−1.5
0
0.6
0.7
0.8
0.9
VF (V)
3V3
3V0
−2
10−1
1
Tj = 25 °C.
BZB784-C2V4 to C4V7.
Tj = 25 to 150 °C.
Fig.2
Fig.3
Forward current as a function of forward
voltage; typical values.
MLD364
12
handbook, halfpage
15
SZ
(mV/K)
13
12
11
10
9V1
8V2
7V5
6V8
6V2
5V6
5V1
8
4
0
−4
10−1
1
10
IZ (mA)
102
BZB784-C5V1 to C15.
Tj = 25 to 150 °C.
Fig.4
Temperature coefficient as a function of
working current; typical values.
2001 Feb 27
5
1
10
IZ (mA)
102
Temperature coefficient as a function of
working current; typical values.
NXP Semiconductors
Product data sheet
Voltage regulator double diodes
BZB784 series
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
E
B
A
X
HE
y
v M A
3
Q
A
A1
c
1
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT323
2001 Feb 27
REFERENCES
IEC
JEDEC
EIAJ
SC-70
6
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
NXP Semiconductors
Product data sheet
Voltage regulator double diodes
BZB784 series
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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does not give any representations or warranties,
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Applications ⎯ Applications that are described herein for
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NXP Semiconductors makes no representation or
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Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2001 Feb 27
7
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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Printed in The Netherlands
613514/02/pp8
Date of release: 2001 Feb 27
Document order number: 9397 750 08112
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