INTERSIL ISL60007DIB825Z

ISL60007
®
Data Sheet
April 21, 2006
Precision 2.50V, 1.08µ-Watt, High
Precision FGA™ Voltage References
FN8087.3
Features
• Reference Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 2.50V
The ISL60007 FGA™ voltage references are extremely low
power, very high precision analog voltage references
fabricated in Intersil's proprietary Floating Gate Analog
technology. The ISL60007 features low supply voltage
operation at ultra-low 400nA operating current resulting in
typical 1.08µW power consumption.
• Absolute Initial Accuracy Options. . . . . ±0.5mV, & ±1.0mV
• 1.08µW typical Power Consumption
• Supply Voltage Range . . . . . . . . . . . . . . . . . . 2.7V to 5.5V
• Ultra-Low Supply Current. . . . . . . . . . . . . . . . . . . . .400nA
In addition, the ISL60007 family features guaranteed initial
accuracy as low as ±0.5mV, temperature coefficients as tight
as 3ppm/°C and long-term stability of 10ppm/√1kHrs.
• Low Temperature Coefficient Options . . . . . . . . . 3ppm/°C
5ppm/°C, & 10ppm/°C
• Long Term Stability. . . . . . . . . . . . . . . . . . . 10ppm/√1kHrs
The initial accuracy and thermal stability performance of the
ISL60007 family plus the low power consumption eliminates
the need to compromise accuracy and thermal stability for
reduced power consumption making it an ideal high
resolution, low power data conversion system.
• 7mA Source & Sink Current
Pinout
• Pb-Free Plus Anneal Available (RoHS Compliant)
ISL60007 (8 LD SOIC)
TOP VIEW
• ESD Protection. . . . . . . . . . . . . 5kV (Human Body Model)
• Standard 8 Ld SOIC Packaging
• Temperature Range . . . . . . . . . . . . . . . . . . -40°C to +85°C
Applications
GND 1
8
DNC
VIN 2
7
DNC
DNC 3
6
VOUT
GND 4
5
DNC
• High Resolution A/Ds & D/As
• Digital Meters
• Bar Code Scanners
• Mobile Communications
• PDA’s and Notebooks
Pin Descriptions
• Battery Management Systems
PIN NAME
GND
VIN
DESCRIPTION
• Medical Systems
Ground Connection
Power Supply Input Connection
VOUT
Voltage Reference Output Connection
DNC
Do Not Connect; Internal Connection - Must Be Left Floating
Ordering Information
PART NUMBER
PART MARKING
VOUT
OPTION
GRADE
TEMP.
RANGE (°C)
PACKAGE
PKG. DWG. #
ISL60007BIB825
60007BI 25
2.500V
±0.5mV, 3ppm/°C
-40 to +85
8 Ld SOIC
ISL60007BIB825Z (Note)
60007BI Z25
2.500V
±0.5mV, 3ppm/°C
-40 to +85
8 Ld SOIC (Pb-free) MDP0027
MDP0027
ISL60007CIB825
60007CI 25
2.500V
±0.5mV, 5ppm/°C
-40 to +85
8 Ld SOIC
MDP0027
ISL60007CIB825Z (Note)
60007CI Z25
2.500V
±0.5mV, 5ppm/°C
-40 to +85
8 Ld SOIC (Pb-free) MDP0027
ISL60007DIB825
60007DI 25
2.500V
±1.0mV, 10ppm/°C
-40 to +85
8 Ld SOIC
ISL60007DIB825Z (Note)
60007DI Z25
2.500V
±1.0mV, 10ppm/°C
-40 to +85
8 Ld SOIC (Pb-free) MDP0027
MDP0027
*Add "-TK" suffix for tape and reel.
NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate
termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL
classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2004-2006. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
ISL60007
Typical Application
VIN = +3.0V
0.1µF
VIN
10µF
VOUT
0.001µF*
ISL60007
GND
REF IN
SERIAL
BUS
ENABLE
SCK
SDAT
16 TO 24-BIT
A/D CONVERTER
*Also see Figure 17 in Applications Information.
2
FN8087.3
April 21, 2006
ISL60007
Absolute Maximum Ratings
Recommended Operating Conditions
Storage Temperature Range . . . . . . . . . . . . . . . . . .-65°C to +125°C
Max Voltage VIN to Gnd. . . . . . . . . . . . . . . . . . . . . . . -0.5V to +6.5V
Max Voltage VOUT to Gnd (10s) . . . . . . . . . . . . . . . -0.5V to +3.50V
Voltage on “DNC” Pins. . . . No connections permitted to these pins.
Lead Temperature, Soldering (10s) . . . . . . . . . . . . . . . . . . . . +225°C
Temperature Range (Industrial) . . . . . . . . . . . . . . . . . . -40°C to 85°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
SYMBOL
Operating Conditions: VIN = 3.0V, IOUT = 0mA, COUT = 0.001µF, TA = -40 to +85°C, Unless Otherwise
Specified.
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
2.500V OUTPUT VOLTAGE
VOUT
VOA
TC VOUT
Output Voltage
2.500
VOUT Accuracy @
TA = 25°C
Output Voltage Temperature
Coefficient (Note 1)
VIN
Input Voltage Range
IIN
Supply Current
ΔVOUT/ΔVIN
Line Regulation
ΔVOUT/ΔIOUT Load Regulation
V
ISL60007B25
-0.5
+0.5
mV
ISL60007C25
-0.5
+0.5
mV
ISL60007D25
-1.0
+1.0
mV
ISL60007B25
3
ppm/°C
ISL60007C25
5
ppm/°C
ISL60007D25
10
ppm/°C
5.5
V
400
800
nA
+2.7V ≤ VIN ≤ +5.5V
30
200
µV/V
Sourcing: 0mA ≤ IOUT ≤ 7mA
15
50
µV/mA
Sinking: -7mA ≤ IOUT ≤ 0mA
50
150
µV/mA
2.7
ΔVOUT/Δt
Long Term Stability (Note 4)
TA = 25°C
10
ppm/√1kHrs
ΔVOUT/ΔTA
Thermal Hysteresis (Note 2)
ΔTA = 125°C
50
ppm
ISC
Short Circuit Current (Note 3)
TA = 25°C, VOUT tied to Gnd
40
VN
Output Voltage Noise
0.1Hz ≤ f ≤ 10Hz
30
80
mA
µVp-p
NOTES:
1. Over the specified temperature range. Temperature coefficient is measured by the box method whereby the change in VOUT is divided by the
temperature range; in this case, -40°C to +85°C = 125°C.
2. Thermal Hysteresis is the change in VOUT measured @ TA = 25°C after temperature cycling over a specified range, ΔTA. VOUT is read initially
at TA = 25°C for the device under test. The device is temperature cycled and a second VOUT measurement is taken at 25°C. The difference
between the initial VOUT reading and the second VOUT reading is then expressed in ppm. For ΔTA = 125°C, the device under test is cycled
from +25°C to +85°C to -40°C to +25°C.
3. Guaranteed by device characterization and/or correlation to other device tests.
4. FGA voltage reference long term drift is a logarithmic characteristic. Changes that occur after the first few hundred hours of operation are
significantly smaller with time, asymptotically approaching zero beyond 1000 hours. Because of this decreasing characteristic, long term drift is
specified in ppm/√1kHrs.
3
FN8087.3
April 21, 2006
ISL60007
Typical Performance Curves, 2.5V Reference
VIN = 3.0V, IOUT = 0mA, TA = 25°C
Unless Otherwise Specified
800
500
700
450
570nA
600
IIN (nA)
IIN (nA)
+85°C
500
400nA
400
400
+25°C
-40°C
300
250nA
350
200
100
2.7
3.4
4.1
4.8
300
2.7
5.5
3.4
VIN (V)
4.1
4.8
5.5
VIN (V)
FIGURE 1. IIN vs VIN - 3 UNITS
FIGURE 2. IIN vs VIN - 3 TEMPS
2.50030
2.5008
NORMALIZED TO 2.50V AT VIN = 3V
NORMALIZED TO +25°C
2.5006
UNIT 2
2.50020
2.5004
UNIT 2
UNIT 1
UNIT 3
VOUT (V)
VOUT (V)
2.5002
2.5
2.4998
UNIT 3
2.50010
UNIT 1
2.50000
2.4996
2.49990
2.4994
2.4992
-40
-15
10
35
TEMPERATURE (°C)
60
2.49980
2.7
85
FIGURE 3. VOUT vs TEMP - 3 UNITS
3.4
4.1
VIN (V)
ΔVIN = +0.3V
NORMALIZED TO VIN = 3V
-40°C
+25°C
100
+85°C
50
0
100mV/DIV
DELTA VOUT (V) (µV)
5.5
FIGURE 4. LINE REGULATION - 3 UNITS
200
150
4.8
ΔVIN = -0.3V
-50
-100
2.7
3.4
4.1
VIN
4.8
FIGURE 5. LINE REGULATION - 3 TEMPS
4
5.5
1ms/DIV
FIGURE 6. LINE TRANSIENT RESPONSE, CL = 0nF
FN8087.3
April 21, 2006
ISL60007
Typical Performance Curves, 2.5V Reference
VIN = 3.0V, IOUT = 0mA, TA = 25°C
Unless Otherwise Specified (Continued)
0
ΔVIN = +0.3V
NO LOAD
-10
1nF LOAD
-20
100mV/DIV
PSRR (dB)
-30
ΔVIN = -0.3V
-40
100nF LOAD
-50
10nF LOAD
-60
-70
-80
-90
-100
1
10
100
1k
10k
100k
1M
FREQUENCY (Hz)
1ms/DIV
FIGURE 7. LINE TRANSIENT RESPONSE, CL = 1nF
FIGURE 8. PSRR vs f vs CL
0.30
IL= +50µA
+85°C
0.10
+25°C
50mV/DIV
DELTA VOUT (mV)
0.20
-40°C
0.00
-0.10
-0.20
IL= -50µA
-0.30
-7
-6 -5 -4
SINKING
-3
-2
-1
0
1
2
3
4 5 6 7
SOURCING
100µs/DIV
OUTPUT CURRENT
FIGURE 9. LOAD REGULATION vs TEMP
FIGURE 10. LOAD TRANSIENT RESPONSE @ IL=50µA, CL=1nF
3.5
3
IL= +7mA
VIN
200mV/DIV
VIN & VOUT (V)
2.5
VOUT
2
1.5
1
0.5
IL= -7mA
0
0
500µs/DIV
FIGURE 11. LOAD TRANSIENT RESPONSE @ IL=7mA,
CL=1nF
5
2
4
6
8
10
12
TIME (ms)
FIGURE 12. TURN-ON TIME @ TA = 25°C
FN8087.3
April 21, 2006
ISL60007
Typical Performance Curves, 2.5V Reference
VIN = 3.0V, IOUT = 0mA, TA = 25°C
Unless Otherwise Specified (Continued)
140
1nF LOAD
120
100nF LOAD
100
NO
LOAD
10µV/DIV
ZOUT (Ω)
10nF LOAD
80
60
40
20
0
1
10
100
1k
10k
100k
10s/DIV
FREQUENCY (Hz)
FIGURE 14. VOUT NOISE
FIGURE 13. ZOUT vs f vs CL
Applications Information
FGA Technology
The ISL60007 series of voltage references use the floating
gate technology to create references with very low drift and
supply current. Essentially the charge stored on a floating
gate cell is set precisely in manufacturing. The reference
voltage output itself is a buffered version of the floating gate
voltage. The resulting reference device has excellent
characteristics which are unique in the industry: very low
temperature drift, high initial accuracy, and almost zero
supply current. Also, the reference voltage itself is not limited
by voltage bandgaps or zener settings, so a wide range of
reference voltages can be programmed (standard voltage
settings are provided, but customer-specific voltages are
available).
The process used for these reference devices is a floating
gate CMOS process, and the amplifier circuitry uses CMOS
transistors for amplifier and output transistor circuitry. While
providing excellent accuracy, there are limitations in output
noise level and load regulation due to the MOS device
characteristics. These limitations are addressed with circuit
techniques discussed in other sections.
Nanopower Operation
circuits using battery power will benefit greatly from having
an accurate, stable reference which essentially presents no
load to the battery.
In particular, battery powered data converter circuits that
would normally require the entire circuit to be disabled when
not in use can remain powered up between conversions as
shown in Figure 15. Data acquisition circuits providing 12 to
24 bits of accuracy can operate with the reference device
continuously biased with no power penalty, providing the
highest accuracy and lowest possible long term drift.
Other reference devices consuming higher supply currents
will need to be disabled in between conversions to conserve
battery capacity. Absolute accuracy will suffer as the device
is biased and requires time to settle to its final value, or, may
not actually settle to a final value as power on time may be
short.
VIN = +3.0V
10µF
VIN
0.01µF
VOUT
ISL60007
GND
0.001µF-0.01µF
Reference devices achieve their highest accuracy when
powered up continuously, and after initial stabilization has
taken place. This drift can be eliminated by leaving the
power on continuously.
The ISL60007 is the first high precision voltage reference
with ultra low power consumption that makes it possible to
leave power on continuously in battery operated circuits. The
ISL60007 consumes extremely low supply current due to the
proprietary FGA technology. Supply current at room
temperature is typically 400nA which is 1 to 2 orders of
magnitude lower than competitive devices. Application
6
REF IN
SERIAL
BUS
ENABLE
SCK
SDAT
12 TO 24-BIT
A/D CONVERTER
FIGURE 15.
FN8087.3
April 21, 2006
ISL60007
Board Mounting Considerations
For applications requiring the highest accuracy, board
mounting location should be reviewed. Placing the device in
areas subject to slight twisting can cause degradation of the
accuracy of the reference voltage due to die stresses. It is
normally best to place the device near the edge of a board,
or the shortest side, as the axis of bending is most limited at
that location. Obviously mounting the device on flexprint or
extremely thin PC material will likewise cause loss of
reference accuracy.
VIN = 3.0V
VIN
10µF
VO
0.1µF
ISL60007
GND
10µF
Noise Performance and Reduction
FIGURE 17.
Turn-On Time
The ISL60007 devices operate with ultra-low supply current
and thus the time to bias up internal circuitry to final values
will be longer than with references that require higher
current. Normal turn-on time is typically 4ms. This is shown
in Figure 18. Since devices can vary in supply current down
to 250nA, turn-on time can last up to about 6ms. Care
should be taken in system design to include this delay before
measurements or conversions are started.
3.5
VIN
3
VIN AND VOUT (V)
The output noise voltage in a 0.1Hz to 10Hz bandwidth is
typically 30µVP-P. This is shown in the plot in the Typical
Performance Curves. The noise measurement is made with
a bandpass filter made of a 1 pole high-pass filter with a
corner frequency at 0.1Hz and a 2-pole low-pass filter with a
corner frequency at 12.6Hz to create a filter with a 9.9Hz
bandwidth. Noise in the 10kHz to 1MHz bandwidth is
approximately 400µVP-P with no capacitance on the output,
as shown in Figure 16. These noise measurements are
made with a 2 decade bandpass filter made of a 1 pole highpass filter with a corner frequency at 1/10 of the center
frequency and 1-pole low-pass filter with a corner frequency
at 10 times the center frequency. Figure 16 also shows the
noise in the 10kHz to 1MHz band can be reduced to about
50µVP-P using a 0.001µF capacitor on the output. Noise in
the 1kHz to 100kHz band can be further reduced using a
0.1µF capacitor on the output, but noise in the 1Hz to 100Hz
band increases due to instability of the very low power
amplifier with a 0.1µF capacitance load. For load
capacitances above 0.001µF the noise reduction network
shown in Figure 17 is recommended. This network reduces
noise significantly over the full bandwidth. As shown in
Figure 16, noise is reduced to less than 40µVP-P from 1Hz
to 1MHz using this network with a 0.01µF capacitor and a
2kΩ resistor in series with a 10µF capacitor.
2kΩ
0.01µF
400nA
2.5
570nA
2
250nA
1.5
1
0.5
0
0
2
4
6
8
10
12
TIME (ms)
400
FIGURE 18. TURN-ON TIME (+25°C)
NOISE VOLTAGE (µVP-P)
350
Temperature Coefficient
300
CL = 0
CL = 0.01µF
& 10µF + 2kΩ
250
200
CL = 0.1µF
150
CL= 0.001µF
100
50
0
1
10
100
1000
10000
100000
The limits stated for temperature coefficient (tempco) are
governed by the method of measurement. The
overwhelming standard for specifying the temperature drift of
a reference is to measure the reference voltage at two
temperatures, take the total variation, (VHIGH - VLOW), and
divide by the temperature extremes of measurement
(THIGH - TLOW). The result is divided by the nominal
reference voltage (at T = 25°C) and multiplied by 106 to yield
ppm/°C. This is the “Box” method for specifying temperature
coefficient.
FIGURE 16. NOISE REDUCTION
7
FN8087.3
April 21, 2006
ISL60007
Typical Application Circuits
VIN = 5V
R = 200Ω
2N2905
VIN
ISL60007
VOUT
2.5V/50mA
0.001µF
GND
FIGURE 19. PRECISION 2.5V, 50mA REFERENCE
VIN = 3.0V
0.1µF
10µF
VIN
ISL60007
VOUT
2.5V
0.001µF
GND
VIN
ISL60007
VOUT
R1 =
2.5V-|VIN|
-(IOUT)
; IOUT ≤ 7mA
0.001µF
GND
R1
-VIN = -3.0V
-2.5V
FIGURE 20. ±2.5V DUAL OUTPUT, HIGH ACCURACY REFERENCE
VIN = 3.0V
0.1µF
10µF
VIN
VOUT
ISL60007
+
EL8178
–
VOUT SENSE
LOAD
GND
FIGURE 21. KELVIN SENSED LOAD
8
FN8087.3
April 21, 2006
ISL60007
Typical Application Circuits (Continued)
ISL60007
VOUT
VIN
GND
CIN 0.001
COUT = 0.001µF
-2.5V
R1 LIMITS MAX LOAD CURRENT
with R1 = 200Ω; ILOAD MAX = 2.5mA
R1 = 200Ω
R1 =
2.5V-|VIN|
-3.0V
-(IOUT)
; IOUT ≤ 7mA
FIGURE 22. NEGATIVE VOLTAGE REFERENCE
2.7-5.5V
0.1µF
10µF
VIN
VOUT
ISL60007
GND
0.001µF
VCC
RH
VOUT
X9119
+
SDA
2-WIRE BUS
EL8178
SCL
VSS
–
VOUT
(BUFFERED)
RL
FIGURE 23. 2.5V FULL SCALE LOW-DRIFT 10-BIT ADJUSTABLE VOLTAGE SOURCE
9
FN8087.3
April 21, 2006
ISL60007
Small Outline Package Family (SO)
A
D
h X 45°
(N/2)+1
N
A
PIN #1
I.D. MARK
E1
E
c
SEE DETAIL “X”
1
(N/2)
B
L1
0.010 M C A B
e
H
C
A2
GAUGE
PLANE
SEATING
PLANE
A1
0.004 C
0.010 M C A B
L
b
0.010
4° ±4°
DETAIL X
MDP0027
SMALL OUTLINE PACKAGE FAMILY (SO)
SYMBOL
SO-8
SO-14
SO16
(0.150”)
SO16 (0.300”)
(SOL-16)
SO20
(SOL-20)
SO24
(SOL-24)
SO28
(SOL-28)
TOLERANCE
NOTES
A
0.068
0.068
0.068
0.104
0.104
0.104
0.104
MAX
-
A1
0.006
0.006
0.006
0.007
0.007
0.007
0.007
±0.003
-
A2
0.057
0.057
0.057
0.092
0.092
0.092
0.092
±0.002
-
b
0.017
0.017
0.017
0.017
0.017
0.017
0.017
±0.003
-
c
0.009
0.009
0.009
0.011
0.011
0.011
0.011
±0.001
-
D
0.193
0.341
0.390
0.406
0.504
0.606
0.704
±0.004
1, 3
E
0.236
0.236
0.236
0.406
0.406
0.406
0.406
±0.008
-
E1
0.154
0.154
0.154
0.295
0.295
0.295
0.295
±0.004
2, 3
e
0.050
0.050
0.050
0.050
0.050
0.050
0.050
Basic
-
L
0.025
0.025
0.025
0.030
0.030
0.030
0.030
±0.009
-
L1
0.041
0.041
0.041
0.056
0.056
0.056
0.056
Basic
-
h
0.013
0.013
0.013
0.020
0.020
0.020
0.020
Reference
-
16
20
24
28
Reference
N
8
14
16
Rev. L 2/01
NOTES:
1. Plastic or metal protrusions of 0.006” maximum per side are not included.
2. Plastic interlead protrusions of 0.010” maximum per side are not included.
3. Dimensions “D” and “E1” are measured at Datum Plane “H”.
4. Dimensioning and tolerancing per ASME Y14.5M-1994
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
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Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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10
FN8087.3
April 21, 2006