Transistor 2SC2206 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1254 Unit: mm 6.9±0.1 1.0 4.5±0.1 7 0. 0.85 4.1±0.2 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0 R ● 1.0±0.1 ● 0.4 ■ Features 2.5±0.1 1.5 R0.9 R0.9 2.4±0.2 2.0±0.2 3.5±0.1 1.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage CEBO 5 V Collector current IC 30 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics 0.45±0.05 (Ta=25˚C) 3 2 2.5 1:Base 2:Collector 3:Emitter 1 1.25±0.05 0.55±0.1 ■ Absolute Maximum Ratings 2.5 EIAJ:SC–71 M Type Mold Package (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = 10µA, IE = 0 30 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 20 V Emitter to base voltage VEBO IE = 10µA, IC = 0 5 V Forward current transfer ratio hFE * VCB = 10V, IE = –1mA 70 Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 1mA Base to emitter voltage VBE VCE = 10V, IC = 1mA Transition frequency fT VCB = 10V, IE = –1mA, f = 200MHz Noise figure NF VCB = 10V, IE = –1mA, f = 5MHz 4 dB Common emitter reverse transfer capacitance Cre VCE = 10V, IC = 1mA, f = 10.7MHz 1.5 pF Reverse transfer impedance Zrb VCB = 10V, IE = –1mA, f = 2MHz 50 Ω *h FE 220 0.1 150 V 0.7 V 300 MHz 2.8 Rank classification Rank B C hFE 70 ~ 140 110 ~ 220 1 Transistor 2SC2206 PC — Ta IC — VCE IC — I B 12 15.0 Ta=25˚C 450 300 250 200 150 100 80µA 8 60µA 6 4 40µA 2 20µA 20 40 60 80 100 120 140 160 5.0 0 0 Ambient temperature Ta (˚C) 6 12 18 Collector to emitter saturation voltage VCE(sat) (V) VCE=10V 50 Collector current IC (mA) 100 80 60 40 20 25˚C 40 Ta=75˚C –25˚C 30 20 10 0 0 0.4 0.6 0.8 1.0 0 Base to emitter voltage VBE (V) 0.4 0.8 1.2 hFE — IC 1.6 2.0 25˚C –25˚C 80 40 Ta=25˚C VCB=10V 6V 300 250 200 150 100 50 0.3 1 3 10 10 3 1 Ta=75˚C 0.3 25˚C 0.1 –25˚C 0.03 0.01 0.1 0.3 30 Collector current IC (mA) 100 1 3 0 – 0.1 – 0.3 –1 –3 10 30 100 Zrb — IE –10 –30 Emitter current IE (mA) –100 Reverse transfer impedance Zrb (Ω) Transition frequency fT (MHz) Ta=75˚C 120 0 0.1 IC/IB=10 60 VCE=10V 160 100 30 fT — I E 350 80 Collector current IC (mA) 400 200 60 100 Base to emitter voltage VBE (V) 240 40 VCE(sat) — IC 60 VCE=10V Ta=25˚C 0.2 20 Base current IB (µA) IC — VBE 120 0 0 Collector to emitter voltage VCE (V) IB — VBE Base current IB (µA) 7.5 2.5 0 0 Forward current transfer ratio hFE 10.0 50 0 2 12.5 Collector current IC (mA) 350 VCE=10V Ta=25˚C IB=100µA 10 400 Collector current IC (mA) Collector power dissipation PC (mW) 500 VCB=10V f=2MHz Ta=25˚C 50 40 30 20 10 0 – 0.1 – 0.3 –1 –3 Emitter current IE (mA) –10 Transistor 2SC2206 PG — IE 24 20 2.0 IC=3mA 1mA 1.5 1.0 16 12 8 0.5 6 4 1 3 10 30 2 0 – 0.1 – 0.3 100 –1 –3 –10 –30 Emitter current IE (mA) bie — gie 20 Reverse transfer susceptance bre (mS) 0 yie=gie+jbie VCE=10V 0 f=10.7MHz yre=gre+jbre VCE=10V –7mA 100 IE=–1mA 12 IE=–1mA – 0.2 58 –2mA – 0.3 8 58 – 0.4 f=10.7MHz 4 100 – 0.5 0 0 8 16 24 32 40 Input conductance gie (mS) – 0.6 – 0.5 –1 –3 –10 bfe — gfe 10– 0.1 16 – 0.3 Emitter current IE (mA) bre — gre 24 –4mA 0 – 0.1 –100 Forward transfer susceptance bfe (mS) 0.3 Collector to emitter voltage VCE (V) Input susceptance bie (mS) 8 4 0 0.1 VCB=6V f=100MHz Rg=50Ω Ta=25˚C 10 Noise figure NF (dB) 2.5 NF — IE 12 f=100MHz VCE=10V Ta=25˚C f=10.7MHz Ta=25˚C Power gain PG (dB) Common emitter reverse transfer capacitance Cre (pF) Cre — VCE 3.0 – 0.1mA f=10.7MHz 58 10.7 –1mA 100 –20 58 –2mA 100 –40 IE=–4mA –60 58 100 –80 –100 yfe=gfe+jbfe VCE=10V –120 – 0.4 – 0.3 – 0.2 – 0.1 0 Reverse transfer conductance gre (mS) 0 20 40 60 80 Forward transfer conductance 100 gfe (mS) boe — goe 1.2 Output susceptance boe (mS) yoe=goe+jboe VCE=10V 1.0 0.8 IE=–1mA 100 0.6 58 0.4 0.2 f=10.7MHz 0 0 0.1 0.2 0.3 0.4 0.5 Output conductance goe (mS) 3