Specification pdf file of LED lamp dot matrix display 2.3 inch-lamp dot matrix | lamp matrix display | 8x8 matrix

LED DOT MATRIX
BL-ML23X882UED
Features:
60.96mm (2.3”) LED dot matrix display.5mm Oval Type LED Lamps in dot matrix.
Low current operation.
Excellent character appearance.
Easy mounting on P.C. Boards or sockets.
I.C. Compatible.
ROHS Compliance.
Electrical-optical characteristics: (Ta=25°C)
Chip
Part No
Row Cathode
Column Anode
Row Anode
Column Cathode
BL-ML23A882URC
BL-ML23B882URC
BL-ML23A882UEC
BL-ML23B882UEC
BL-ML23A882UYC
BL-ML23B882UYC
BL-ML23A882UGC
BL-ML23B882UGC
BL-ML23A882PGC
BL-ML23B882PGC
BL-ML23A882UBC
BL-ML23B882UBC
BL-ML23A882UWC
BL-ML23B882UWC
(Test Condition: IF=20mA)
λP
(n
m)
Forward
Voltage(VF)
Unit:V
Luminous
Intensity
(Iv)
Unit:mcd
Min. Typ.
Emit
color
Materi
al
Ultra
Red
Ultra
Red
Ultra
Yellow
Ultra
Green
Ultra
Pure
Green
Ultra
Blue
Ultra
White
AlGaAs,
DDH
660
1.95
2.20
500
750
AlGaInP
630
2.10
2.50
250
800
AlGaInP
590
2.10
2.50
250
800
AlGaInP
574
2.20
2.50
100
250
InGaN
525
3.80
4.50
600
1800
InGaN
470
2.70
4.20
600
1500
InGaN
/
2.70
4.20
1000
2300
PG
UB
W
Typ
Max
Absolute maximum ratings (Ta=25°C)
Parameter
Forward Current IF
Power Dissipation Pd
Reverse Voltage VR
Peak Forward Current
IPF
(Duty 1/10 @1KHZ)
Operation Temperature
TOPR
Storage
Temperature
TSTG
Lead Soldering
Temperature
UR
UE
UY
UG
Unit
mA
25
60
5
30
65
5
30
65
5
30
75
5
30
110
5
30
120
5
30
120
5
mW
150
150
150
150
150
100
100
mA
V
-40 to +80
°C
-40 to +85
°C
Max.260±5°C for 3 sec Max.
(1.6mm from the base of the epoxy bulb)
°C
TSOL
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LED DOT MATRIX
BL-ML23X882UED
Package configuration & Internal circuit diagram
Notes:
1. All dimensions are in millimeters (inches)
2. Tolerance is ±0.25(0.01")unless otherwise noted.
3. Specifications are subject to change without notice.
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LED DOT MATRIX
BL-ML23X882UED
Typical electrical-optical characteristics curves:
(A)
1.0
(B)
(C)
(D)
(2)
(3)
(8)
(4)
(1) (6)
(5)
(9)
(10)
0.5
0
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
Wavelength(nm)
RELATIVE INTENSITY Vs WAVELENGTH(λ p )
(1) - GaAsP/GaAs 655nm/Red
(2) - GaP 570nm/Yellow Green
(3) - GaAsP/GaP 585nm/Yellow
(4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red
(5) - GaP 700nm/Bright Red
(6) - GaAlAs/GaAs 660nm/Super Red
(8) - GaAsP/GaP 610nm/Super Red
8
64 5
2 3
40
30
20
10
0
1.2
1.6
2.0
2.4
2.6
4.0
3.0
2.0
1.0
0
3.0
20
60
80
0.2
-10
0
10
20
30
40
50
60
3
5
10
20
40
60
80
100
AMBIENT TEMPERATURE Ta(℃)
FORWARD CURRENT VS. AMBIENT
TEMPERATURE
4
3
3KHz
300Hz
30KHz
100KHz
10KHz 1KHz
100Hz
10
9
8
7
6
5
4
3
2
70
1
AMBIENT TEMPERATURE Ta(℃)
20
6
2,4,8,A
0
100
2
-20
30
1
Ipeak MAX.
IDC MAX.
0.5
40
300KHz
3KHz
10KHz
1KHz
100KHz F-REFRESH RATE
10
9
8
7
6
5
1
5
4
2
3
0.1
-30
40
FORWARD CURRENT (mA)
RELATIVE LUMINOUS
INTENSITY VS. FORWARD
CURRENT
Ipeak MAX.
IDC MAX.
RELATIVE LUMINOUS INTENSITY
1
5
B
FORWARD VOLTAGE (Vf)
FORWARD CURRENT VS.
FORWARD VOLTAGE
3
2
50
1
FORWARD CURRENT(mA)
FORWARD CURRENT(mA)
RELATIVE LUMINOUS INTENSITY
1
50
(9) - GaAlAs 880nm
(10) - GaAs/GaAs & GaAlAs/GaAs 940nm
(A) - GaN/SiC 430nm/Blue
(B) - InGaN/SiC 470nm/Blue
(C) - InGaN/SiC 505nm/Ultra Green
(D) - InGaAl/SiC 525nm/Ultra Green
1
10
100
1000
tp-PULSE DURATION uS
(1,2,3,4,6,8,B.D.J.K)
10,000
1
1
10
100
1000
tp-PULSE DURATION uS
(5)
NOTE:25℃ free air temperature unless otherwise specified
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10,000
LED DOT MATRIX
BL-ML23X882UED
Packing and weighting
64g/pcs
Maximum
10pcs/bag
Maximum
4
Bag/Inner Box
3 Inner Box /Box
9 Inner Box /Box
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