Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar transistor Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing 5˚ 1.50+0.25 –0.05 ■ Features 2.8+0.2 –0.3 3 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 ■ Resistance by Part Number 1.1+0.3 –0.1 1.1+0.2 –0.1 (R2) 10 kΩ 22 kΩ 47 kΩ 47 kΩ 5.1 kΩ 10 kΩ 10 kΩ 22 kΩ 10 kΩ 4.7 kΩ 4.7 kΩ 47 kΩ 47 kΩ 47 kΩ 2.2 kΩ 22 kΩ 0 to 0.1 • UNR2210 • UNR2211 • UNR2212 • UNR2213 • UNR2214 • UNR2215 • UNR2216 • UNR2217 • UNR2218 • UNR2219 • UNR221D • UNR221E • UNR221F • UNR221K • UNR221L • UNR221M • UNR221N • UNR221T • UNR221V • UNR221Z 10˚ Marking Symbol (R1) (UN2210) 8L 47 kΩ (UN2211) 8A 10 kΩ (UN2212) 8B 22 kΩ (UN2213) 8C 47 kΩ (UN2214) 8D 10 kΩ (UN2215) 8E 10 kΩ (UN2216) 8F 4.7 kΩ (UN2217) 8H 22 kΩ (UN2218) 8I 0.51 kΩ (UN2219) 8K 1 kΩ (UN221D) 8M 47 kΩ (UN221E) 8N 47 kΩ (UN221F) 8O 4.7 kΩ (UN221K) 8P 10 kΩ (UN221L) 8Q 4.7 kΩ (UN221M) EL 2.2 kΩ (UN221N) EX 4.7 kΩ (UN221T) EZ 22 kΩ (UN221V) FD 2.2 kΩ (UN221Z) FF 4.7 kΩ 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package Internal Connection R1 B C R2 E ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 50 V Collector current IC 100 mA Total power dissipation PT 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note) The part numbers in the parenthesis show conventional part number. Publication date: December 2003 SJH00010CED 1 UNR221x Series ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 50 Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 µA Emitter-base IEBO VEB = −6 V, IC = 0 0.01 mA UNR2210/2215/2216/2217 Conditions Min Typ Max V V 0.1 cutoff current UNR2213 0.1 (Collector open) UNR2212/2214/221D/ 221E/221M/221N/221T 0.2 UNR221Z 0.4 UNR2211 0.5 UNR221F/221K 1.0 UNR2219 1.5 UNR2218/221L/221V 2.0 Forward current UNR221V transfer ratio VCE = 10 V, IC = 5 mA hFE 6 UNR2218/221K/221L 20 µA 20 UNR2219/221D/221F 30 UNR2211 35 UNR2212/221E 60 UNR221Z 60 UNR2213/2214/221M 80 UNR221N/221T 80 UNR2210*/2215*/2216*/2217* Collector-emitter saturation voltage Unit 200 400 160 VCE(sat) 460 IC = 10 mA, IB = 0.3 mA 0.25 V IC = 10 mA, IB = 1.5 mA UNR221V Output voltage high-level VOH Output voltage low-level VOL VCC = 5 V, VB = 0.5 V, RL = 1 kΩ VCC = 5 V, VB = 3.5 V, RL = 1 kΩ UNR221D VCC = 5 V, VB = 10 V, RL = 1 kΩ UNR221E VCC = 5 V, VB = 6 V, RL = 1 kΩ fT Input resistance R1 UNR2218 V VCC = 5 V, VB = 2.5 V, RL = 1 kΩ UNR2213/221K Transition frequency 4.9 0.2 VCB = 10 V, IE = −2 mA, f = 200 MHz 150 −30% 0.51 UNR2219 1.0 UNR221M/211V 2.2 UNR2216/221F/221L/ 221N/221Z 4.7 UNR2211/2214/2215/221K 10 UNR2212/2217/221T 22 UNR2210/2213/221D/221E 47 V MHz +30% kΩ Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification 2 Rank Q R S No-rank hFE 160 to 260 210 to 340 290 to 460 160 to 460 SJH00010CED UNR221x Series ■ Electrical Characteristics (continued) Ta = 25°C ± 3°C Parameter Symbol Resistance ratio UNR221M Conditions Min R1/R2 Typ Max Unit 0.047 UNR221N 0.1 UNR2218/2219 0.08 UNR221Z 0.10 0.12 0.21 UNR2214 0.17 UNR221T 0.21 0.25 0.47 UNR221F 0.37 UNR221V 0.47 0.57 1.0 UNR2211/2212/2213/221L 0.8 1.0 1.2 UNR221K 1.70 2.13 2.60 UNR221E 1.70 2.14 2.60 UNR221D 3.7 4.7 5.7 Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart PT Ta Total power dissipation PT (mW) 250 200 150 100 50 0 0 40 80 120 160 Ambient temperature Ta (°C) Characteristics charts of UNR2210 Ta = 25°C Collector current IC (mA) 50 40 30 0.3 mA 0.4 mA 0.5 mA 0.6 mA 0.7 mA 0.1 mA 20 10 0 0 2 4 6 8 10 12 Collector-emitter voltage VCE (V) 100 hFE IC 400 IC / IB = 10 VCE = 10 V Forward current transfer ratio hFE IB = 1.0 mA 0.9 mA 0.8 mA VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) IC VCE 60 10 1 Ta = 75°C 25°C 0.1 300 Ta = 75°C 25°C 200 −25°C 100 −25°C 0.01 0.1 0 1 10 Collector current IC (mA) SJH00010CED 100 1 10 100 1 000 Collector current IC (mA) 3 UNR221x Series IO VIN 4 3 2 100 VO = 5 V Ta = 25°C 103 Input voltage VIN (V) 5 VIN IO 104 f = 1 MHz IE = 0 Ta = 25°C Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 6 102 VO = 0.2 V Ta = 25°C 10 1 0.1 10 1 0 0.1 1 10 1 0.4 100 Collector-base voltage VCB (V) 0.6 0.8 1.0 1.2 0.01 0.1 1.4 1 10 100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR2211 VCE(sat) IC Collector current IC (mA) 0.7 mA 0.6 mA 0.5 mA 120 0.4 mA 0.3 mA 80 0.2 mA 40 0.1 mA 0 0 2 4 6 8 10 12 100 IC / IB = 10 1 25°C −25˚C 0.01 0.1 1 200 25°C −25°C 100 0 100 Ta = 75°C 1 Collector current IC (mA) 104 4 3 2 10 100 1 000 Collector current IC (mA) VIN IO 100 VO = 5 V Ta = 25°C 103 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 10 300 IO VIN 102 VO = 0.2 V Ta = 25°C 10 1 0.1 10 1 0 0.1 1 10 Collector-base voltage VCB (V) 4 Ta = 75°C 0.1 Cob VCB 5 VCE = 10 V 10 Collector-emitter voltage VCE (V) 6 hFE IC 400 Forward current transfer ratio hFE Ta = 25°C IB = 1.0 mA 0.9 mA 0.8 mA Collector-emitter saturation voltage VCE(sat) (V) IC VCE 160 100 1 0.4 0.6 0.8 1.0 1.2 Input voltage VIN (V) SJH00010CED 1.4 0.01 0.1 1 10 Output current IO (mA) 100 UNR221x Series Characteristics charts of UNR2212 VCE(sat) IC IB = 1.0 mA 0.9 mA 0.8 mA 120 0.7 mA 0.6 mA 0.5 mA 0.4 mA 80 0.3 mA 0.2 mA 40 0.1 mA 0 0 2 4 6 8 10 12 100 IC / IB = 10 1 0.1 −25°C 0.01 0.1 1 10 300 200 25°C −25°C 100 0 100 Ta = 75°C 1 Collector current IC (mA) 4 3 2 100 1 000 VIN IO 100 VO = 5 V Ta = 25°C 103 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C 10 Collector current IC (mA) IO VIN 104 Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Ta = 75°C 25°C Cob VCB 5 VCE = 10 V 10 Collector-emitter voltage VCE (V) 6 hFE IC 400 Forward current transfer ratio hFE Collector current IC (mA) Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) IC VCE 160 102 10 VO = 0.2 V Ta = 25°C 10 1 0.1 1 0 0.1 1 10 1 0.4 100 0.6 0.8 1.0 1.2 0.01 1.4 0.1 Input voltage VIN (V) Collector-base voltage VCB (V) 1 10 100 Output current IO (mA) Characteristics charts of UNR2213 VCE(sat) IC Collector current IC (mA) 0.9 mA 0.8 mA 0.7 mA 0.6 mA 120 0.5 mA 0.4 mA 80 0.3 mA 0.2 mA 40 0.1 mA 0 0 2 4 6 8 10 12 Collector-emitter voltage VCE (V) 100 hFE IC IC / IB = 10 10 1 Ta = 75°C 25°C 0.1 −25°C 0.01 0.1 400 1 10 Collector current IC (mA) SJH00010CED 100 VCE = 10 V Forward current transfer ratio hFE Ta = 25°C IB = 1.0 mA Collector-emitter saturation voltage VCE(sat) (V) IC VCE 160 Ta = 75°C 300 25°C −25°C 200 100 0 1 10 100 1 000 Collector current IC (mA) 5 UNR221x Series IO VIN 4 3 2 100 VO = 5 V Ta = 25°C 103 Input voltage VIN (V) 5 VIN IO 104 f = 1 MHz IE = 0 Ta = 25°C Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 6 102 VO = 0.2 V Ta = 25°C 10 1 0.1 10 1 0 0.1 1 10 1 0.4 100 Collector-base voltage VCB (V) 0.6 0.8 1.0 1.2 0.01 0.1 1.4 1 10 100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR2214 VCE(sat) IC Collector current IC (mA) IB = 1.0 mA 120 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 80 0.3 mA 40 0.2 mA 0.1 mA 0 0 2 4 6 8 10 12 100 IC / IB = 10 10 1 Ta = 75°C 25°C 0.1 1 10 104 25°C −25°C 100 0 100 1 4 3 2 10 100 1 000 Collector current IC (mA) VIN IO 100 VO = 5 V Ta = 25°C 103 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Ta = 75°C 200 IO VIN 102 VO = 0.2 V Ta = 25°C 10 1 0.1 10 1 0 0.1 1 10 Collector-base voltage VCB (V) 6 300 Collector current IC (mA) Cob VCB 5 VCE = 10 V −25°C 0.01 0.1 Collector-emitter voltage VCE (V) 6 hFE IC 400 Forward current transfer ratio hFE Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) IC VCE 160 100 1 0.4 0.6 0.8 1.0 1.2 Input voltage VIN (V) SJH00010CED 1.4 0.01 0.1 1 10 Output current IO (mA) 100 UNR221x Series Characteristics charts of UNR2215 IC VCE VCE(sat) IC 120 0.7 mA 0.6 mA 0.5 mA 0.4 mA 80 0.3 mA 0.2 mA 40 0.1 mA 0 0 2 4 6 8 10 12 100 IC / IB = 10 1 Ta = 75°C 25°C 0.1 Ta = 75°C 200 25°C −25°C 100 1 10 0 100 1 Collector current IC (mA) 4 3 2 100 1 000 VIN IO 100 VO = 5 V Ta = 25°C 103 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C 10 Collector current IC (mA) IO VIN 104 Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 300 −25°C 0.01 0.1 Cob VCB 5 VCE = 10 V 10 Collector-emitter voltage VCE (V) 6 hFE IC 400 Forward current transfer ratio hFE Ta = 25°C IB = 1.0 mA 0.9 mA 0.8 mA Collector current IC (mA) Collector-emitter saturation voltage VCE(sat) (V) 160 102 10 VO = 0.2 V Ta = 25°C 10 1 0.1 1 0 0.1 1 10 1 0.4 100 Collector-base voltage VCB (V) 0.6 0.8 1.0 1.2 0.01 0.1 1.4 Input voltage VIN (V) 1 10 100 Output current IO (mA) Characteristics charts of UNR2216 VCE(sat) IC IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 120 0.4 mA 80 0.3 mA 0.2 mA 40 0.1 mA 0 0 2 4 6 8 10 12 Collector-emitter voltage VCE (V) 100 hFE IC 400 IC / IB = 10 10 1 Ta = 75°C 25°C 0.1 VCE = 10 V Forward current transfer ratio hFE Collector current IC (mA) Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) IC VCE 160 Ta = 75°C 300 25°C −25°C 200 100 −25°C 0.01 0.1 1 10 Collector current IC (mA) SJH00010CED 100 0 1 10 100 1 000 Collector current IC (mA) 7 UNR221x Series IO VIN 4 3 2 100 VO = 5 V Ta = 25°C 103 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C 5 VIN IO 104 Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 6 102 VO = 0.2 V Ta = 25°C 10 1 0.1 10 1 0 0.1 1 10 1 0.4 100 Collector-base voltage VCB (V) 0.6 0.8 1.0 1.2 0.01 0.1 1.4 1 10 100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR2217 80 0.4 mA 0.3 mA 0.2 mA 60 40 20 0.1 mA 0 0 2 4 6 8 10 12 100 1 Ta = 75°C 25°C 0.1 1 10 Ta = 75°C 25°C −25°C 100 0 100 1 3 2 100 1 000 VIN IO 100 VO = 5 V Ta = 25°C 103 Input voltage VIN (V) 4 10 Collector current IC (mA) IO VIN 104 Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 200 Collector current IC (mA) f = 1 MHz IE = 0 Ta = 25°C 102 VO = 0.2 V Ta = 25°C 10 1 0.1 10 1 0 0.1 1 10 Collector-base voltage VCB (V) 8 300 −25°C 0.01 0.1 Cob VCB 5 VCE = 10 V 10 Collector-emitter voltage VCE (V) 6 hFE IC 400 IC / IB = 10 Forward current transfer ratio hFE T = 25°C a IB =1 .0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 100 Collector current IC (mA) VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) IC VCE 120 100 1 0.4 0.6 0.8 1.0 1.2 Input voltage VIN (V) SJH00010CED 1.4 0.01 0.1 1 10 Output current IO (mA) 100 UNR221x Series Characteristics charts of UNR2218 VCE(sat) IC Collector current IC (mA) 200 IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 160 120 0.6 mA 0.5 mA 0.4 mA 80 0.3 mA 40 0.2 mA 0 0.1 mA 0 2 4 6 8 10 12 100 IC / IB = 10 10 1 Ta = 75°C 25°C 0.1 Ta = 75°C 80 25°C −25°C 40 10 100 1 IO VIN 3 2 100 VO = 5 V Ta = 25°C 103 Input voltage VIN (V) 4 100 1 000 VIN IO 104 f = 1 MHz IE = 0 Ta = 25°C 10 Collector current IC (mA) Collector current IC (mA) Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 120 0 1 Cob VCB 5 VCE = 10 V −25°C 0.01 0.1 Collector-emitter voltage VCE (V) 6 hFE IC 160 Forward current transfer ratio hFE Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) IC VCE 240 102 10 VO = 0.2 V Ta = 25°C 10 1 0.1 1 0 0.1 1 10 1 0.4 100 Collector-base voltage VCB (V) 0.6 0.8 1.0 1.2 0.01 0.1 1.4 Input voltage VIN (V) 1 10 100 Output current IO (mA) Characteristics charts of UNR2219 VCE(sat) IC Collector current IC (mA) 200 IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 160 120 0.5 mA 0.4 mA 0.3 mA 80 40 0.2 mA 0.1 mA 0 0 2 4 6 8 10 12 Collector-emitter voltage VCE (V) 100 hFE IC 160 IC / IB = 10 VCE = 10 V Forward current transfer ratio hFE Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) IC VCE 240 10 1 Ta = 75°C 25°C 0.1 120 Ta = 75°C 80 25°C −25°C 40 −25°C 0.01 0.1 0 1 10 Collector current IC (mA) SJH00010CED 100 1 10 100 1 000 Collector current IC (mA) 9 UNR221x Series IO VIN 4 3 2 100 VO = 5 V Ta = 25°C 103 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C 5 VIN IO 104 Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 6 102 VO = 0.2 V Ta = 25°C 10 1 0.1 10 1 0 0.1 1 10 1 0.4 100 Collector-base voltage VCB (V) 0.6 0.8 1.0 1.2 0.01 0.1 1.4 1 10 100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR221D VCE(sat) IC 20 15 0.2 mA 0.1 mA 10 5 0 0 2 4 6 8 10 12 100 10 1 −25°C 0.01 0.1 1 80 40 1 4 3 2 10 100 1 000 Collector current IC (mA) VIN IO 100 VO = 5 V Ta = 25°C 103 Input voltage VIN (V) Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 25°C −25°C 0 100 Ta = 75°C 120 IO VIN 104 f = 1 MHz IE = 0 Ta = 25°C 102 10 VO = 0.2 V Ta = 25°C 10 1 0.1 1 0 0.1 1 10 Collector-base voltage VCB (V) 10 10 VCE = 10 V Collector current IC (mA) Cob VCB 5 Ta = 75°C 25°C 0.1 Collector-emitter voltage VCE (V) 6 hFE IC 160 IC / IB = 10 Forward current transfer ratio hFE Collector current IC (mA) Ta = 25°C 0.9 mA 0.8 mA 0.5 mA 0.7 mA 0.4 mA 25 0.6 mA 0.3 mA IB = 1.0 mA Collector-emitter saturation voltage VCE(sat) (V) IC VCE 30 100 1 1.5 2.0 2.5 3.0 3.5 Input voltage VIN (V) SJH00010CED 4.0 0.01 0.1 1 10 Output current IO (mA) 100 UNR221x Series Characteristics charts of UNR221E VCE(sat) IC Collector current IC (mA) 50 40 0.3 mA 0.2 mA 0.4 mA 0.5 mA 0.1 mA 30 20 10 0 0 2 4 6 8 10 12 100 IC / IB = 10 10 1 Ta = 75°C 25°C 0.1 1 10 25°C −25°C 80 40 0 100 1 4 3 2 100 1 000 VIN IO 100 VO = 5 V Ta = 25°C 103 Input voltage VIN (V) f = 1MHz IE = 0 Ta = 25°C 10 Collector current IC (mA) IO VIN 104 Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Ta = 75°C 120 Collector current IC (mA) Cob VCB 5 VCE = 10 V −25°C 0.01 0.1 Collector-emitter voltage VCE (V) 6 hFE IC 160 Forward current transfer ratio hFE IB = 1.0 mA 0.7 mA Ta = 25°C 0.9 mA 0.6 mA 0.8 mA Collector-emitter saturation voltage VCE(sat) (V) IC VCE 60 102 VO = 0.2 V Ta = 25°C 10 1 0.1 10 1 0 0.1 1 10 1 1.5 100 Collector-base voltage VCB (V) 2.0 2.5 3.0 3.5 0.01 0.1 4.0 1 10 100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR221F VCE(sat) IC Collector current IC (mA) 200 0.9 mA 0.8 mA 0.7 mA 0.6 mA 160 120 IB = 1.0 mA 0.5 mA 80 0.4 mA 0.3 mA 40 0.2 mA 0.1 mA 0 0 2 4 6 8 10 12 Collector-emitter voltage VCE (V) 100 hFE IC 160 IC / IB = 10 10 Ta = 75°C 1 VCE = 10 V Forward current transfer ratio hFE Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) IC VCE 240 25°C 0.1 120 Ta = 75°C 80 25°C −25°C 40 −25°C 0.01 0.1 1 10 Collector current IC (mA) SJH00010CED 100 0 1 10 100 1 000 Collector current IC (mA) 11 UNR221x Series IO VIN 4 3 2 100 VO = 5 V Ta = 25°C 103 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C 5 VIN IO 104 Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 6 102 VO = 0.2 V Ta = 25°C 10 1 0.1 10 1 0 0.1 1 10 1 0.4 100 Collector-base voltage VCB (V) 0.6 0.8 1.0 1.2 0.01 0.1 1.4 1 10 100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR221K VCE(sat) IC Collector current IC (mA) 200 160 IB = 1.2 mA 120 1.0 mA 0.8 mA 80 0.6 mA 0.4 mA 40 0.2 mA 0 0 2 4 6 8 10 100 10 1 25°C −25°C 0.01 12 1 1 000 4 3 2 VO = 0.2 V Ta = 25°C 10 1 0.1 1 0 1 10 100 0.01 0.1 1 10 Output current IO (mA) SJH00010CED VCE = 10 V 200 160 Ta = 75°C 120 25°C 80 −25°C 40 0 1 10 100 Collector current IC (mA) VIN IO Input voltage VIN (V) Collector output capacitance C (pF) (Common base, input open circuited) ob 100 100 f = 1 MHz IE = 0 Ta = 25°C Collector-base voltage VCB (V) 12 10 Collector current IC (mA) Cob VCB 5 Ta = 75°C 0.1 Collector-emitter voltage VCE (V) 6 hFE IC 240 IC / IB = 10 Forward current transfer ratio hFE Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) IC VCE 240 100 1 000 UNR221x Series Characteristics charts of UNR221L VCE(sat) IC Collector current IC (mA) 200 160 IB = 1.0 mA 0.8 mA 120 0.6 mA 80 0.4 mA 40 0.2 mA 0 0 2 4 6 8 10 12 100 IC / IB = 10 10 1 Ta = 75°C 25°C 0.1 −25°C 0.01 25°C 120 −25°C 80 40 1 000 1 10 100 1 000 Collector current IC (mA) VIN IO 100 f = 1 MHz IE = 0 Ta = 25°C Input voltage VIN (V) Collector output capacitance C (pF) (Common base, input open circuited) ob 100 Ta = 75°C 160 Collector current IC (mA) Cob VCB 5 10 VCE = 10 V 200 0 1 Collector-emitter voltage VCE (V) 6 hFE IC 240 Forward current transfer ratio hFE Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) IC VCE 240 4 3 2 VO = 0.2 V Ta = 25°C 10 1 0.1 1 0 10 1 0.01 0.1 100 1 10 100 Output current IO (mA) Collector-base voltage VCB (V) Characteristics charts of UNR221M IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 160 0.5 mA 0.4 mA 0.3 mA 120 80 0.2 mA 40 0.1 mA 0 10 hFE IC IC / IB = 10 1 Ta = 75°C 25°C 0.1 −25˚C 0.01 2 4 6 8 10 12 Collector-emitter voltage VCE (V) 1 10 100 Collector current IC (mA) SJH00010CED 1 000 VCE = 10 V 400 300 Ta = 75°C 25°C 200 −25°C 100 0 0.001 0 500 Forward current transfer ratio hFE Ta = 25°C 200 Collector current IC (mA) VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) IC VCE 240 1 10 100 1 000 Collector current IC (mA) 13 UNR221x Series IO VIN VIN IO 104 3 2 103 Input voltage VIN (V) 4 100 VO = 5 V Ta = 25°C f = 1 MHz IE = 0 Ta = 25°C Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 5 102 10 VO = 0.2 V Ta = 25°C 10 1 0.1 1 1 0 0.1 1 10 0.4 100 0.6 0.8 1.0 1.2 0.01 1.4 0.1 Input voltage VIN (V) Collector-base voltage VCB (V) 1 10 100 Output current IO (mA) Characteristics charts of UNR221N VCE(sat) IC IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 120 80 0.3 mA 0.2 mA 40 0.1 mA 0 0 2 4 6 8 10 12 10 IC / IB = 10 1 0.1 Ta = 75°C 25°C −25°C 0.01 1 10 Ta = 75°C 320 25°C 240 −25°C 160 80 0 1 000 1 3 2 10 100 1 000 Collector current IC (mA) VIN IO 100 VO = 5 V Ta = 25°C VO = 0.2 V Ta = 25°C 10 103 Input voltage VIN (V) 4 102 10 1 0.1 1 0 1 10 Collector-base voltage VCB (V) 14 400 IO VIN 104 f = 1 MHz IE = 0 Ta = 25°C Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 5 100 VCE = 10 V Collector current IC (mA) Collector-emitter voltage VCE (V) 6 hFE IC 480 Forward current transfer ratio hFE Collector current IC (mA) Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) IC VCE 160 100 1 0.4 0.6 0.8 1.0 1.2 Input voltage VIN (V) SJH00010CED 1.4 0.01 0.1 1 10 Output current IO (mA) 100 UNR221x Series Characteristics charts of UNR221T IC VCE VCE(sat) IC IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 120 80 0.3 mA 0.2 mA 40 0.1 mA 0 0 2 4 6 8 10 12 10 IC / IB = 10 1 Ta = 75°C 0.1 25°C 0.01 Ta = 75°C 320 25°C 240 −25°C 160 80 100 1 000 1 Collector current IC (mA) 4 3 2 100 1 000 VIN IO 100 VO = 5 V Ta = 25°C 103 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C 10 Collector current IC (mA) IO VIN 104 Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 400 0 10 1 IO VIN 5 VCE = 10 V −25°C Collector-emitter voltage VCE (V) 6 hFE IC 480 Forward current transfer ratio hFE Collector current IC (mA) Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) 160 102 10 VO = 0.2 V Ta = 25°C 10 1 0.1 1 0 10 1 1 0.4 100 Collector-base voltage VCB (V) 0.6 0.8 1.0 1.2 0.01 0.1 1.4 1 10 100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR221V VCE(sat) IC IB = 1.0 mA 120 0.9 mA 0.8 mA 0.7 mA 80 0.6 mA 0.5 mA 40 0.4 mA 0 0 2 4 6 8 0.3 mA 0.2 mA 10 12 Collector-emitter voltage VCE (V) 10 hFE IC IC / IB = 10 1 Ta = 75°C 0.1 25°C −25°C 0.01 240 Forward current transfer ratio hFE Collector current IC (mA) Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) IC VCE 160 200 160 10 100 Collector current IC (mA) SJH00010CED 1 000 Ta = 75°C 120 25°C 80 −25°C 40 0 1 VCE = 10 V 1 10 100 1 000 Collector current IC (mA) 15 UNR221x Series IO VIN 4 3 2 100 VO = 5 V Ta = 25°C 103 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C 5 VIN IO 104 Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 6 102 10 VO = 0.2 V Ta = 25°C 10 1 0.1 1 0 10 1 1 0.4 100 Collector-base voltage VCB (V) 0.6 0.8 1.0 1.2 0.01 0.1 1.4 1 10 100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR221Z VCE(sat) IC IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 120 80 0.3 mA 0.2 mA 40 0.1 mA 0 0 2 4 6 8 10 12 10 1 Ta = 75°C 0.1 25°C −25°C 0.01 25°C −25°C 160 80 1 000 1 4 3 2 10 100 1 000 Collector current IC (mA) VIN IO 100 VO = 5 V Ta = 25°C 103 Input voltage VIN (V) Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 240 IO VIN 104 f = 1 MHz IE = 0 Ta = 25°C 102 10 VO = 0.2 V Ta = 25°C 10 1 0.1 1 0 1 10 Collector-base voltage VCB (V) 16 Ta = 75°C 320 Collector current IC (mA) Cob VCB 5 100 VCE = 10 V 400 0 10 1 Collector-emitter voltage VCE (V) 6 hFE IC 480 IC / IB = 10 Forward current transfer ratio hFE Collector current IC (mA) Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) IC VCE 160 100 1 0.4 0.6 0.8 1.0 1.2 Input voltage VIN (V) SJH00010CED 1.4 0.01 0.1 1 10 Output current IO (mA) 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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