Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
PESDxS2UT series
Double ESD protection diodes in
SOT23 package
Product data sheet
Supersedes data of 2003 Aug 20
2004 Apr 15
NXP Semiconductors
Product data sheet
Double ESD protection diodes in SOT23
package
FEATURES
PESDxS2UT series
QUICK REFERENCE DATA
• Uni-directional ESD protection of up to two lines
SYMBOL
• Max. peak pulse power: Ppp = 330 W at tp = 8/20 µs
VRWM
reverse stand-off
voltage
3.3, 5.2, 12, 15
and 24
Cd
diode capacitance
VR = 0 V;
f = 1 MHz
207, 152, 38, 32 pF
and 23
number of
protected lines
2
• Low clamping voltage: V(CL)R = 20 V at Ipp = 18 A
• Ultra-low reverse leakage current: IRM < 700 nA
• ESD protection > 23 kV
• IEC 61000-4-2; level 4 (ESD)
• IEC 61000-4-5 (surge); Ipp = 18 A at tp = 8/20 µs.
APPLICATIONS
PARAMETER
VALUE
UNIT
V
PINNING
• Computers and peripherals
PIN
• Communication systems
• Audio and video equipment
• High speed data lines
• Parallel ports.
DESCRIPTION
1
cathode 1
2
cathode 2
3
common anode
DESCRIPTION
Uni-directional double ESD protection diodes in a SOT23
plastic package. Designed to protect up to two
transmission or data lines from ElectroStatic Discharge
(ESD) damage.
1
3
3
MARKING
TYPE NUMBER
2
2
MARKING CODE(1)
PESD3V3S2UT
*U9
PESD5V2S2UT
*U1
PESD12VS2UT
*U2
PESD15VS2UT
*U3
PESD24VS2UT
*U4
sym022
001aaa490
Fig.1 Simplified outline (SOT23) and symbol.
Note
1. * = p : made in Hong Kong.
* = t : made in Malaysia.
* = W : made in China.
2004 Apr 15
1
2
NXP Semiconductors
Product data sheet
Double ESD protection diodes in SOT23
package
PESDxS2UT series
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
PESD3V3S2UT
−
DESCRIPTION
VERSION
plastic surface mounted package; 3 leads
SOT23
PESD5V2S2UT
PESD12VS2UT
PESD15VS2UT
PESD24VS2UT
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Ppp
Ipp
PARAMETER
peak pulse power
CONDITIONS
MIN.
MAX.
UNIT
8/20 µs pulse; notes 1 and 2
PESD3V3S2UT
−
330
W
PESD5V2S2UT
−
260
W
PESD12VS2UT
−
180
W
PESD15VS2UT
−
160
W
PESD24VS2UT
−
160
W
PESD3V3S2UT
−
18
A
PESD5V2S2UT
−
15
A
PESD12VS2UT
−
5
A
PESD15VS2UT
−
5
A
peak pulse current
8/20 µs pulse; notes 1 and 2
PESD24VS2UT
−
3
A
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
Notes
1. Non-repetitive current pulse 8/20µ µs exponential decay waveform; see Fig.2.
2. Measured across either pins 1 and 3 or pins 2 and 3.
2004 Apr 15
3
NXP Semiconductors
Product data sheet
Double ESD protection diodes in SOT23
package
PESDxS2UT series
ESD maximum ratings
SYMBOL
ESD
PARAMETER
CONDITIONS
electrostatic discharge
capability
VALUE
UNIT
PESD3V3S2UT
30
kV
PESD5V2S2UT
30
kV
PESD12VS2UT
30
kV
PESD15VS2UT
30
kV
PESD24VS2UT
23
kV
10
kV
IEC 61000-4-2 (contact discharge);
notes 1 and 2
HBM MIL-Std 883
PESDxS2UT series
Notes
1. Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Fig.3.
2. Measured across either pins 1 and 3 or pins 2 and 3.
ESD standards compliance
ESD STANDARD
CONDITIONS
IEC 61000-4-2; level 4 (ESD); see Fig.3
>15 kV (air); > 8 kV (contact)
HBM MIL-Std 883; class 3
>4 kV
001aaa191
MLE218
120
Ipp
handbook, halfpage
100 %
Ipp
100 % Ipp; 8 µs
(%)
80
90 %
e−t
50 % Ipp; 20 µs
40
10 %
tr = 0.7 to 1 ns
0
0
10
20
30
t (µs)
40
30 ns
60 ns
Fig.2
8/20 µs pulse waveform according to
IEC 61000-4-5.
2004 Apr 15
Fig.3
4
ElectroStatic Discharge (ESD) pulse
waveform according to IEC 61000-4-2.
t
NXP Semiconductors
Product data sheet
Double ESD protection diodes in SOT23
package
PESDxS2UT series
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
VRWM
IRM
VBR
Cd
V(CL)R
PARAMETER
MIN.
TYP.
MAX.
UNIT
reverse stand-off voltage
PESD3V3S2UT
−
−
3.3
V
PESD5V2S2UT
−
−
5.2
V
PESD12VS2UT
−
−
12
V
PESD15VS2UT
−
−
15
V
PESD24VS2UT
−
−
24
V
reverse leakage current
PESD3V3S2UT
VRWM = 3.3 V
−
0.7
2
µA
PESD5V2S2UT
VRWM = 5.2 V
−
0.15
1
µA
PESD12VS2UT
VRWM = 12 V
−
<0.02
1
µA
PESD15VS2UT
VRWM = 15 V
−
<0.02
1
µA
PESD24VS2UT
VRWM = 24 V
−
<0.02
1
µA
PESD3V3S2UT
5.2
5.6
6.0
V
PESD5V2S2UT
6.4
6.8
7.2
V
PESD12VS2UT
14.7
15.0
15.3
V
PESD15VS2UT
17.6
18.0
18.4
V
PESD24VS2UT
26.5
27.0
27.5
V
PESD3V3S2UT
−
207
300
pF
PESD5V2S2UT
−
152
200
pF
PESD12VS2UT
−
38
75
pF
PESD15VS2UT
−
32
70
pF
PESD24VS2UT
−
23
50
pF
Ipp = 1 A
−
−
7
V
Ipp = 18 A
−
−
20
V
Ipp = 1 A
−
−
9
V
Ipp = 15 A
−
−
20
V
Ipp = 1 A
−
−
19
V
Ipp = 5 A
−
−
35
V
Ipp = 1 A
−
−
23
V
Ipp = 5 A
−
−
40
V
Ipp = 1 A
−
−
36
V
Ipp = 3 A
−
−
70
V
breakdown voltage
diode capacitance
clamping voltage
PESD3V3S2UT
PESD5V2S2UT
PESD12VS2UT
PESD15VS2UT
PESD24VS2UT
2004 Apr 15
CONDITIONS
IZ = 5 mA
f = 1 MHz; VR = 0 V
notes 1 and 2
5
NXP Semiconductors
Product data sheet
Double ESD protection diodes in SOT23
package
SYMBOL
Rdiff
PARAMETER
PESDxS2UT series
CONDITIONS
MIN.
TYP.
MAX.
UNIT
differential resistance
PESD3V3S2UT
IR = 1 mA
−
−
400
Ω
PESD5V2S2UT
IR = 1 mA
−
−
80
Ω
PESD12VS2UT
IR = 1 mA
−
−
200
Ω
PESD15VS2UT
IR = 1 mA
−
−
225
Ω
PESD24VS2UT
IR = 0.5 mA
−
−
300
Ω
Notes
1. Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.2.
2. Measured either across pins 1 and 3 or pins 2 and 3.
GRAPHICAL DATA
001aaa147
104
001aaa193
1.2
Ppp
(W)
PPP
PPP(25°C)
103
0.8
(1)
102
0.4
(2)
10
1
10
102
103
0
104
0
tp (µs)
50
100
150
200
Tj (°C)
(1) PESD3V3S2UT and PESD5V2S2UT.
(2) PESD12VS2UT, PESD15VS2UT, PESD24VS2UT
Tamb = 25 °C.
tp = 8/20 µs exponential decay waveform; see Fig.2.
Fig.5
Fig.4
Peak pulse power dissipation as a function
of pulse time; typical values.
2004 Apr 15
6
Relative variation of peak pulse power as a
function of junction temperature; typical
values.
NXP Semiconductors
Product data sheet
Double ESD protection diodes in SOT23
package
PESDxS2UT series
001aaa148
240
001aaa149
50
Cd
(pF)
Cd
(pF)
200
40
160
120
(1)
30
(2)
20
(1)
(2)
80
(3)
10
40
0
1
2
3
4
0
5
0
VR (V)
5
10
15
20
25
VR (V)
(1) PESD12VS2UT; VRWM = 12 V.
(2) PESD15VS2UT; VRWM = 15 V.
(1) PESD3V3S2UT; VRWM = 3.3 V.
(2) PESD5V2S2UT; VRWM = 5 V.
(3) PESD24VS2UT; VRWM = 24 V.
Tamb = 25 °C; f = 1 MHz.
Tamb = 25 °C; f = 1 MHz.
Fig.6
Fig.7
Diode capacitance as a function of reverse
voltage; typical values.
2004 Apr 15
7
Diode capacitance as a function of reverse
voltage; typical values.
NXP Semiconductors
Product data sheet
Double ESD protection diodes in SOT23
package
001aaa270
10
IR
IR(25˚C)
(1)
1
10−1
−100
−50
0
50
100
150
Tj (°C)
(1) PESD3V3S2UT; VRWM = 3.3 V.
PESD5V2S2UT; VRWM = 5 V.
IR is less than 10 nA at 150 °C for:
PESD12V52UT; VRWM = 12 V.
PESD15VS2UT; VRWM = 15 V.
PESD24VS2UT; VRWM = 24 V.
Fig.8
Relative variation of reverse leakage
current as a function of junction
temperature; typical values.
2004 Apr 15
8
PESDxS2UT series
NXP Semiconductors
Product data sheet
Double ESD protection diodes in SOT23
package
ESD TESTER
RZ
450 Ω
PESDxS2UT series
RG 223/U
50 Ω coax
10×
ATTENUATOR
4 GHz DIGITAL
OSCILLOSCOPE
50 Ω
CZ
note 1
Note 1: IEC61000-4-2 network
CZ = 150 pF; RZ = 330 Ω
D.U.T.: PESDxS2UT
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 20 V/div
horizontal scale = 50 ns/div
PESD24VS2UT
GND
PESD15VS2UT
GND
GND
PESD12VS2UT
GND
PESD5V2S2UT
GND
PESD3V3S2UT
GND
unclamped +1 kV ESD voltage waveform
(IEC61000-4-2 network)
clamped +1 kV ESD voltage waveform
(IEC61000-4-2 network)
GND
GND
vertical scale = 10 V/div
horizontal scale = 50 ns/div
vertical scale = 200 V/div
horizontal scale = 50 ns/div
unclamped −1 kV ESD voltage waveform
(IEC61000-4-2 network)
clamped −1 kV ESD voltage waveform
(IEC61000-4-2 network)
001aaa492
Fig.9 ESD clamping test set-up and waveforms.
2004 Apr 15
9
NXP Semiconductors
Product data sheet
Double ESD protection diodes in SOT23
package
PESDxS2UT series
APPLICATION INFORMATION
The PESDxS2UT series is designed for uni-directional protection for up to two lines against damage caused by
ElectroStatic Discharge (ESD) and surge pulses. The PESDxS2UT series may be used on lines where the signal
polarities are below ground. PESDxS2UT series provide a surge capability of up to 330 W (Ppp) per line for an 8/20 µs
waveform.
line 1 to be protected
line 1 to be protected
line 2 to be protected
PESDxS2UT
PESDxS2UT
ground
ground
unidirectional protection
of two lines
bidirectional protection
of one line
001aaa491
Fig.10 Typical application: ESD protection of data lines.
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The
following guidelines are recommended:
• Place the PESDxS2UT as close as possible to the input terminal or connector.
• The path length between the PESDxS2UT and the protected line should be minimized.
• Keep parallel signal paths to a minimum.
• Avoid running protected conductors in parallel with unprotected conductors.
• Minimize all printed-circuit board conductive loops including power and ground loops.
• Minimize the length of transient return paths to ground.
• Avoid using shared return paths to a common ground point.
• Ground planes should be used whenever possible. For multilayer printed-circuit boards use ground vias.
2004 Apr 15
10
NXP Semiconductors
Product data sheet
Double ESD protection diodes in SOT23
package
PESDxS2UT series
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
2004 Apr 15
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
TO-236AB
11
NXP Semiconductors
Product data sheet
Double ESD protection diodes in SOT23
package
PESDxS2UT series
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
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of such information and shall have no liability for the
consequences of use of such information.
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http://www.nxp.com/profile/terms, including those
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reserves the right to make changes to information
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specifications and product descriptions, at any time and
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Apr 15
12
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R76/03/pp13
Date of release: 2004 Apr 15
Document order number: 9397 750 12823
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