Data Sheet

PESDxS2UQ series
Double ESD protection diodes in SOT663 package
Rev. 04 — 26 January 2010
Product data sheet
1. Product profile
1.1 General description
Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a SOT663 ultra
small and flat lead Surface-Mounted Device (SMD) plastic package designed to protect
up to two signal lines from the damage caused by ESD and other transients.
1.2 Features
„ Unidirectional ESD protection of up to
„ ESD protection up to 30 kV
two lines
„ Max. peak pulse power: PPP = 150 W
„ IEC 61000-4-2; level 4 (ESD)
at tp = 8/20 μs
„ IEC 61000-4-5 (surge); IPP = 15 A
„ Low clamping voltage: VCL = 20 V
at IPP = 15 A
at tp = 8/20 μs
„ Low reverse leakage current: IRM < 1 nA
1.3 Applications
„ Computers and peripherals
„ Audio and video equipment
„ Communication systems
„ High-speed data lines
„ Parallel ports
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
VRWM
reverse standoff voltage
Conditions
PESD3V3S2UQ
Cd
Min
Typ
Max
Unit
-
-
3.3
V
PESD5V0S2UQ
-
-
5
V
PESD12VS2UQ
-
-
12
V
PESD15VS2UQ
-
-
15
V
PESD24VS2UQ
-
-
24
V
PESD3V3S2UQ
-
200
275
pF
PESD5V0S2UQ
-
150
215
pF
PESD12VS2UQ
-
38
100
pF
PESD15VS2UQ
-
32
70
pF
PESD24VS2UQ
-
23
50
pF
diode capacitance
f = 1 MHz; VR = 0 V
PESDxS2UQ series
NXP Semiconductors
Double ESD protection diodes in SOT663 package
2. Pinning information
Table 2.
Pinning
Pin
Description
1
cathode 1
2
cathode 2
3
common anode
Simplified outline
Graphic symbol
3
1
3
2
1
2
006aaa154
3. Ordering information
Table 3.
Ordering information
Type number
PESD3V3S2UQ
Package
Name
Description
Version
-
plastic surface-mounted package; 3 leads
SOT663
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
4. Marking
Table 4.
Marking codes
Type number
Marking code
PESD3V3S2UQ
E1
PESD5V0S2UQ
E2
PESD12VS2UQ
E3
PESD15VS2UQ
E4
PESD24VS2UQ
E5
PESDXS2UQ_SER_4
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 04 — 26 January 2010
2 of 13
PESDxS2UQ series
NXP Semiconductors
Double ESD protection diodes in SOT663 package
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
PPP
peak pulse power
tp = 8/20 μs
[1][2]
IPP
peak pulse current
tp = 8/20 μs
[1][2]
-
150
W
PESD3V3S2UQ
-
15
A
PESD5V0S2UQ
-
15
A
PESD12VS2UQ
-
5
A
PESD15VS2UQ
-
5
A
PESD24VS2UQ
-
3
A
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
Per diode
Per device
[1]
Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.
[2]
Measured across either pins 1 and 3 or pins 2 and 3.
Table 6.
ESD maximum ratings
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
electrostatic discharge
voltage
IEC 61000-4-2
(contact discharge)
Min
Max
Unit
-
30
kV
Per diode
VESD
PESD3V3S2UQ
PESD5V0S2UQ
-
30
kV
PESD12VS2UQ
-
30
kV
PESD15VS2UQ
-
30
kV
PESD24VS2UQ
-
23
kV
-
10
kV
PESDxS2UQ series
MIL-STD-883
(human body model)
[1]
Device stressed with ten non-repetitive ESD pulses.
[2]
Measured across either pins 1 and 3 or pins 2 and 3.
Table 7.
[1][2]
ESD standards compliance
Standard
Conditions
Per diode
IEC 61000-4-2; level 4 (ESD)
> 15 kV (air); > 8 kV (contact)
MIL-STD-883; class 3 (human body model)
> 4 kV
PESDXS2UQ_SER_4
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 04 — 26 January 2010
3 of 13
PESDxS2UQ series
NXP Semiconductors
Double ESD protection diodes in SOT663 package
001aaa631
IPP
001aaa630
120
100 %
90 %
100 % IPP; 8 μs
IPP
(%)
80
e−t
50 % IPP; 20 μs
40
10 %
0
10
20
30
30 ns
40
t (μs)
Fig 1.
t
tr = 0.7 ns to 1 ns
0
60 ns
8/20 μs pulse waveform according to
IEC 61000-4-5
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
6. Characteristics
Table 8.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
-
-
3.3
V
Per diode
VRWM
reverse standoff
voltage
PESD3V3S2UQ
IRM
VBR
PESD5V0S2UQ
-
-
5
V
PESD12VS2UQ
-
-
12
V
PESD15VS2UQ
-
-
15
V
PESD24VS2UQ
-
-
24
V
reverse leakage current
PESD3V3S2UQ
VRWM = 3.3 V
-
0.55
3
μA
PESD5V0S2UQ
VRWM = 5 V
-
50
300
nA
PESD12VS2UQ
VRWM = 12 V
-
<1
30
nA
PESD15VS2UQ
VRWM = 15 V
-
<1
50
nA
PESD24VS2UQ
VRWM = 24 V
-
<1
50
nA
PESD3V3S2UQ
5.2
5.6
6.0
V
PESD5V0S2UQ
6.4
6.8
7.2
V
PESD12VS2UQ
14.7
15.0
15.3
V
PESD15VS2UQ
17.6
18.0
18.4
V
PESD24VS2UQ
26.5
27.0
27.5
V
breakdown voltage
IR = 5 mA
PESDXS2UQ_SER_4
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 04 — 26 January 2010
4 of 13
PESDxS2UQ series
NXP Semiconductors
Double ESD protection diodes in SOT663 package
Table 8.
Characteristics …continued
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Cd
diode capacitance
f = 1 MHz; VR = 0 V
PESD3V3S2UQ
-
200
275
pF
PESD5V0S2UQ
-
150
215
pF
PESD12VS2UQ
-
38
100
pF
PESD15VS2UQ
-
32
70
pF
-
23
50
pF
IPP = 1 A
-
-
8
V
IPP = 15 A
-
-
20
V
PESD5V0S2UQ
IPP = 1 A
-
-
9
V
IPP = 15 A
-
-
20
V
PESD12VS2UQ
IPP = 1 A
-
-
19
V
IPP = 5 A
-
-
35
V
PESD15VS2UQ
IPP = 1 A
-
-
23
V
IPP = 5 A
-
-
40
V
PESD24VS2UQ
IPP = 1 A
-
-
36
V
IPP = 3 A
-
-
70
V
PESD24VS2UQ
VCL
clamping voltage
PESD3V3S2UQ
rdif
[1][2]
differential resistance
PESD3V3S2UQ
IR = 5 mA
-
-
40
Ω
PESD5V0S2UQ
IR = 5 mA
-
-
15
Ω
PESD12VS2UQ
IR = 5 mA
-
-
15
Ω
PESD15VS2UQ
IR = 1 mA
-
-
225
Ω
PESD24VS2UQ
IR = 0.5 mA
-
-
300
Ω
[1]
Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.
[2]
Measured across either pins 1 and 3 or pins 2 and 3.
PESDXS2UQ_SER_4
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 04 — 26 January 2010
5 of 13
PESDxS2UQ series
NXP Semiconductors
Double ESD protection diodes in SOT663 package
001aaa726
104
001aaa193
1.2
PPP
PPP
(W)
PPP(25°C)
103
0.8
102
0.4
10
1
102
10
0
103
0
50
100
150
200
Tj (°C)
tp (μs)
Tamb = 25 °C
Fig 3.
Peak pulse power dissipation as a function of
pulse duration; typical values
Fig 4.
001aaa727
240
Cd
(pF)
Relative variation of peak pulse power as a
function of junction temperature;
typical values
001aaa728
50
Cd
(pF)
200
40
160
30
(1)
120
20
(2)
(1)
(2)
80
10
40
(3)
0
0
1
2
3
4
5
0
5
10
15
VR (V)
20
25
VR (V)
f = 1 MHz; Tamb = 25 °C
f = 1 MHz; Tamb = 25 °C
(1) PESD3V3S2UQ; VRWM = 3.3 V
(1) PESD12VS2UQ; VRWM = 12 V
(2) PESD5V0S2UQ; VRWM = 5 V
(2) PESD15VS2UQ; VRWM = 15 V
(3) PESD24VS2UQ; VRWM = 24 V
Fig 5.
Diode capacitance as a function of reverse
voltage; typical values
Fig 6.
Diode capacitance as a function of reverse
voltage; typical values
PESDXS2UQ_SER_4
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 04 — 26 January 2010
6 of 13
PESDxS2UQ series
NXP Semiconductors
Double ESD protection diodes in SOT663 package
001aaa729
10
IRM
IRM(25°C)
(1)
(2)
1
10−1
−100
−50
0
50
100
150
Tj (°C)
(1) PESD3V3S2UQ; VRWM = 3.3 V
(2) PESD5V0S2UQ; VRWM = 5 V
IR is less than 15 nA at 150 °C for:
PESD12VS2UQ; VRWM = 12 V
PESD15VS2UQ; VRWM = 15 V
PESD24VS2UQ; VRWM = 24 V
Fig 7.
Relative variation of reverse leakage current as a function of junction temperature; typical values
PESDXS2UQ_SER_4
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 04 — 26 January 2010
7 of 13
PESDxS2UQ series
NXP Semiconductors
Double ESD protection diodes in SOT663 package
ESD TESTER
RZ
450 Ω
RG 223/U
50 Ω coax
10×
ATTENUATOR
4 GHz DIGITAL
OSCILLOSCOPE
50 Ω
CZ
note 1
Note 1: IEC61000-4-2 network
CZ = 150 pF; RZ = 330 Ω
DUT: PESDxS2UQ
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 20 V/div
horizontal scale = 50 ns/div
PESD24VS2UQ
GND
PESD15VS2UQ
GND
GND
PESD12VS2UQ
GND
PESD5V2S2UQ
GND
PESD3V3S2UQ
GND
unclamped +1 kV ESD voltage waveform
(IEC61000-4-2 network)
clamped +1 kV ESD voltage waveform
(IEC61000-4-2 network)
GND
GND
vertical scale = 10 V/div
horizontal scale = 50 ns/div
vertical scale = 200 V/div
horizontal scale = 50 ns/div
unclamped −1 kV ESD voltage waveform
(IEC61000-4-2 network)
clamped −1 kV ESD voltage waveform
(IEC61000-4-2 network)
001aaa731
Fig 8.
ESD clamping test setup and waveforms
PESDXS2UQ_SER_4
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 04 — 26 January 2010
8 of 13
PESDxS2UQ series
NXP Semiconductors
Double ESD protection diodes in SOT663 package
7. Application information
The PESDxS2UQ series is designed for the protection of up to two unidirectional data
lines from the damage caused by ESD and surge pulses. The devices may be used on
lines where the signal polarities are below ground. The PESDxS2UQ series provides a
surge capability of up to 150 W (PPP) per line for an 8/20 μs waveform.
line 1 to be protected
line 1 to be protected
line 2 to be protected
PESDxS2UQ
PESDxS2UQ
ground
unidirectional protection
of two lines
Fig 9.
ground
bidirectional protection
of one line
001aaa730
Typical application: ESD protection of data lines
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
PESDXS2UQ_SER_4
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 04 — 26 January 2010
9 of 13
PESDxS2UQ series
NXP Semiconductors
Double ESD protection diodes in SOT663 package
8. Package outline
1.7
1.5
0.6
0.5
3
0.3
0.1
1.7
1.5
1.3
1.1
1
2
0.33
0.23
0.5
0.18
0.08
1
Dimensions in mm
02-05-21
Fig 10. Package outline PESDxS2UQ series (SOT663)
9. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
PESD3V3S2UQ
Package Description
Packing quantity
4000
8000
SOT663
2 mm pitch, 8 mm tape and reel
-
-315
SOT663
4 mm pitch, 8 mm tape and reel
-115
-
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
[1]
For further information and the availability of packing methods, see Section 12.
PESDXS2UQ_SER_4
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 04 — 26 January 2010
10 of 13
PESDxS2UQ series
NXP Semiconductors
Double ESD protection diodes in SOT663 package
10. Revision history
Table 10.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PESDXS2UQ_SER_4
20100126
Product data sheet
-
PESDXS2UQ_SER_N_3
Modifications:
PESDXS2UQ_SER_N_3
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•
•
•
•
•
•
•
•
Legal texts have been adapted to the new company name where appropriate.
Section 1.1 “General description”: amended
Section 1.4 “Quick reference data”: amended
Table 2 “Pinning”: updated
Section 7 “Application information”: amended
Figure 10: superseded by minimized package outline drawing
Section 9 “Packing information”: added
Section 11 “Legal information”: updated
20080911
Product data sheet
-
PESDXS2UQ_SERIES_2
PESDXS2UQ_SERIES_2 20040427
Product specification
-
PESDXS2UQ_SERIES_1
PESDXS2UQ_SERIES_1 20031215
Product specification
-
-
PESDXS2UQ_SER_4
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 04 — 26 January 2010
11 of 13
PESDxS2UQ series
NXP Semiconductors
Double ESD protection diodes in SOT663 package
11. Legal information
11.1
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
11.3
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
11.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PESDXS2UQ_SER_4
Product data sheet
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Rev. 04 — 26 January 2010
12 of 13
NXP Semiconductors
PESDxS2UQ series
Double ESD protection diodes in SOT663 package
13. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
11.1
11.2
11.3
11.4
12
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Application information. . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Packing information . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 26 January 2010
Document identifier: PESDXS2UQ_SER_4
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