Data Sheet

MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage
suppression
Rev. 01 — 3 September 2008
Product data sheet
1. Product profile
1.1 General description
Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a common
cathode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted
Device (SMD) plastic package. The devices are designed for ESD and transient
overvoltage protection of up to two signal lines.
Table 1.
Product overview
Type number[1]
MMBZ12VDL
Package
Configuration
NXP
JEDEC
SOT23
TO-236AB
dual common cathode
MMBZ15VDL
MMBZ18VCL
MMBZ20VCL
MMBZ27VCL
MMBZ33VCL
[1]
All types available as /DG halogen-free version.
1.2 Features
n Unidirectional ESD protection of
two lines
n Bidirectional ESD protection of one line
n Low diode capacitance: Cd ≤ 140 pF
n Rated peak pulse power: PPPM ≤ 40 W
n Ultra low leakage current: IRM ≤ 5 nA
n ESD protection up to 30 kV (contact
discharge)
n IEC 61000-4-2; level 4 (ESD)
n IEC 61643-321
n AEC-Q101 qualified
1.3 Applications
n Computers and peripherals
n Audio and video equipment
n Cellular handsets and accessories
n Automotive electronic control units
n Portable electronics
MMBZxVCL; MMBZxVDL series
NXP Semiconductors
Double ESD protection diodes for transient overvoltage suppression
1.4 Quick reference data
Table 2.
Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
MMBZ12VDL
MMBZ12VDL/DG
-
-
8.5
V
MMBZ15VDL
MMBZ15VDL/DG
-
-
12.8
V
MMBZ18VCL
MMBZ18VCL/DG
-
-
14.5
V
MMBZ20VCL
MMBZ20VCL/DG
-
-
17
V
MMBZ27VCL
MMBZ27VCL/DG
-
-
22
V
MMBZ33VCL
MMBZ33VCL/DG
-
-
26
V
MMBZ12VDL
MMBZ12VDL/DG
-
110
140
pF
MMBZ15VDL
MMBZ15VDL/DG
-
85
105
pF
MMBZ18VCL
MMBZ18VCL/DG
-
70
90
pF
MMBZ20VCL
MMBZ20VCL/DG
-
65
80
pF
MMBZ27VCL
MMBZ27VCL/DG
-
48
60
pF
MMBZ33VCL
MMBZ33VCL/DG
-
45
55
pF
Per diode
VRWM
Cd
reverse standoff voltage
diode capacitance
f = 1 MHz; VR = 0 V
2. Pinning information
Table 3.
Pinning
Pin
Description
1
anode (diode 1)
2
anode (diode 2)
3
common cathode
Simplified outline
Graphic symbol
3
1
3
2
1
2
006aaa150
MMBZXVCL_MMBZXVDL_SER_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 3 September 2008
2 of 15
MMBZxVCL; MMBZxVDL series
NXP Semiconductors
Double ESD protection diodes for transient overvoltage suppression
3. Ordering information
Table 4.
Ordering information
Type number
MMBZ12VDL
Package
Name
Description
Version
-
plastic surface-mounted package; 3 leads
SOT23
-
plastic surface-mounted package; 3 leads
SOT23
MMBZ15VDL
MMBZ18VCL
MMBZ20VCL
MMBZ27VCL
MMBZ33VCL
MMBZ12VDL/DG
MMBZ15VDL/DG
MMBZ18VCL/DG
MMBZ20VCL/DG
MMBZ27VCL/DG
MMBZ33VCL/DG
4. Marking
Table 5.
Marking codes
Type number
Marking code[1]
Type number
Marking code[1]
MMBZ12VDL
*MA
MMBZ12VDL/DG
TJ*
MMBZ15VDL
*MB
MMBZ15VDL/DG
TL*
MMBZ18VCL
*MC
MMBZ18VCL/DG
TN*
MMBZ20VCL
*MD
MMBZ20VCL/DG
TQ*
MMBZ27VCL
*ME
MMBZ27VCL/DG
TS*
MMBZ33VCL
*MF
MMBZ33VCL/DG
TU*
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
MMBZXVCL_MMBZXVDL_SER_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 3 September 2008
3 of 15
MMBZxVCL; MMBZxVDL series
NXP Semiconductors
Double ESD protection diodes for transient overvoltage suppression
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
PPPM
rated peak pulse power
tp = 10/1000 µs
[1][2]
IPPM
rated peak pulse current
tp = 10/1000 µs
[1][2]
-
40
W
MMBZ12VDL
MMBZ12VDL/DG
-
2.35
A
MMBZ15VDL
MMBZ15VDL/DG
-
1.9
A
MMBZ18VCL
MMBZ18VCL/DG
-
1.6
A
MMBZ20VCL
MMBZ20VCL/DG
-
1.4
A
MMBZ27VCL
MMBZ27VCL/DG
-
1
A
MMBZ33VCL
MMBZ33VCL/DG
-
0.87
A
[3]
-
350
mW
[4]
Per diode
Per device
total power dissipation
Ptot
Tamb ≤ 25 °C
-
440
mW
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−55
+150
°C
Tstg
storage temperature
−65
+150
°C
[1]
In accordance with IEC 61643-321 (10/1000 µs current waveform).
[2]
Measured from pin 1 or 2 to pin 3.
[3]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[4]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
Table 7.
ESD maximum ratings
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Max
Unit
IEC 61000-4-2
(contact discharge)
-
30
kV
machine model
-
2
kV
Per diode
VESD
[1][2]
electrostatic discharge voltage
[1]
Device stressed with ten non-repetitive ESD pulses.
[2]
Measured from pin 1 or 2 to pin 3.
MMBZXVCL_MMBZXVDL_SER_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 3 September 2008
4 of 15
MMBZxVCL; MMBZxVDL series
NXP Semiconductors
Double ESD protection diodes for transient overvoltage suppression
Table 8.
ESD standards compliance
Standard
Conditions
Per diode
IEC 61000-4-2; level 4 (ESD)
> 15 kV (air); > 8 kV (contact)
MIL-STD-883; class 3 (human body model)
> 8 kV
001aaa631
IPP
006aab319
150
100 %
90 %
IPP
(%)
100 % IPP; 10 µs
100
50 % IPP; 1000 µs
50
10 %
0
1.0
2.0
3.0
30 ns
4.0
tp (ms)
Fig 1.
t
tr = 0.7 ns to 1 ns
0
10/1000 µs pulse waveform according to
IEC 61643-321
60 ns
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
6. Thermal characteristics
Table 9.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per device
Rth(j-a)
Rth(j-sp)
thermal resistance from junction in free air
to ambient
[1]
-
-
350
K/W
[2]
-
-
280
K/W
thermal resistance from junction
to solder point
[3]
-
-
60
K/W
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[3]
Soldering point at pin 3.
MMBZXVCL_MMBZXVDL_SER_1
Product data sheet
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Rev. 01 — 3 September 2008
5 of 15
MMBZxVCL; MMBZxVDL series
NXP Semiconductors
Double ESD protection diodes for transient overvoltage suppression
7. Characteristics
Table 10. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
MMBZ12VDL
MMBZ12VDL/DG
IF = 10 mA
-
-
0.9
V
MMBZ15VDL
MMBZ15VDL/DG
IF = 10 mA
-
-
0.9
V
MMBZ18VCL
MMBZ18VCL/DG
IF = 10 mA
-
-
0.9
V
MMBZ20VCL
MMBZ20VCL/DG
IF = 10 mA
-
-
0.9
V
MMBZ27VCL
MMBZ27VCL/DG
IF = 200 mA
-
-
1.1
V
MMBZ33VCL
MMBZ33VCL/DG
IF = 10 mA
-
-
0.9
V
MMBZ12VDL
MMBZ12VDL/DG
-
-
8.5
V
MMBZ15VDL
MMBZ15VDL/DG
-
-
12.8
V
MMBZ18VCL
MMBZ18VCL/DG
-
-
14.5
V
MMBZ20VCL
MMBZ20VCL/DG
-
-
17
V
MMBZ27VCL
MMBZ27VCL/DG
-
-
22
V
MMBZ33VCL
MMBZ33VCL/DG
-
-
26
V
Per diode
VF
VRWM
IRM
forward voltage
reverse standoff
voltage
reverse leakage current
MMBZ12VDL
MMBZ12VDL/DG
VRWM = 8.5 V
-
0.1
5
nA
MMBZ15VDL
MMBZ15VDL/DG
VRWM = 12.8 V
-
0.1
5
nA
MMBZ18VCL
MMBZ18VCL/DG
VRWM = 14.5 V
-
0.1
5
nA
MMBZ20VCL
MMBZ20VCL/DG
VRWM = 17 V
-
0.1
5
nA
MMBZ27VCL
MMBZ27VCL/DG
VRWM = 22 V
-
0.1
5
nA
MMBZ33VCL
MMBZ33VCL/DG
VRWM = 26 V
-
0.1
5
nA
MMBZXVCL_MMBZXVDL_SER_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 3 September 2008
6 of 15
MMBZxVCL; MMBZxVDL series
NXP Semiconductors
Double ESD protection diodes for transient overvoltage suppression
Table 10. Characteristics …continued
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VBR
IR = 1 mA
Cd
VCL
Min
Typ
Max
Unit
MMBZ12VDL
MMBZ12VDL/DG
11.4
12
12.6
V
MMBZ15VDL
MMBZ15VDL/DG
14.3
15
15.8
V
MMBZ18VCL
MMBZ18VCL/DG
17.1
18
18.9
V
MMBZ20VCL
MMBZ20VCL/DG
19
20
21
V
MMBZ27VCL
MMBZ27VCL/DG
25.65
27
28.35
V
MMBZ33VCL
MMBZ33VCL/DG
31.35
33
34.65
V
MMBZ12VDL
MMBZ12VDL/DG
-
110
140
pF
MMBZ15VDL
MMBZ15VDL/DG
-
85
105
pF
MMBZ18VCL
MMBZ18VCL/DG
-
70
90
pF
MMBZ20VCL
MMBZ20VCL/DG
-
65
80
pF
MMBZ27VCL
MMBZ27VCL/DG
-
48
60
pF
MMBZ33VCL
MMBZ33VCL/DG
-
45
55
pF
breakdown voltage
diode capacitance
f = 1 MHz; VR = 0 V
[1][2]
clamping voltage
MMBZ12VDL
MMBZ12VDL/DG
IPPM = 2.35 A
-
-
17
V
MMBZ15VDL
MMBZ15VDL/DG
IPPM = 1.9 A
-
-
21.2
V
MMBZ18VCL
MMBZ18VCL/DG
IPPM = 1.6 A
-
-
25
V
MMBZ20VCL
MMBZ20VCL/DG
IPPM = 1.4 A
-
-
28
V
MMBZ27VCL
MMBZ27VCL/DG
IPPM = 1 A
-
-
38
V
MMBZ33VCL
MMBZ33VCL/DG
IPPM = 0.87 A
-
-
46
V
MMBZXVCL_MMBZXVDL_SER_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 3 September 2008
7 of 15
MMBZxVCL; MMBZxVDL series
NXP Semiconductors
Double ESD protection diodes for transient overvoltage suppression
Table 10. Characteristics …continued
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
SZ
Conditions
Min
Typ
Max
Unit
MMBZ12VDL
MMBZ12VDL/DG
-
8.1
-
mV/K
MMBZ15VDL
MMBZ15VDL/DG
-
11
-
mV/K
MMBZ18VCL
MMBZ18VCL/DG
-
14
-
mV/K
MMBZ20VCL
MMBZ20VCL/DG
-
15.8
-
mV/K
MMBZ27VCL
MMBZ27VCL/DG
-
23
-
mV/K
MMBZ33VCL
MMBZ33VCL/DG
-
29.4
-
mV/K
temperature coefficient IZ = 1 mA
[1]
In accordance with IEC 61643-321 (10/1000 µs current waveform).
[2]
Measured from pin 1 or 2 to pin 3.
006aab327
103
006aab321
1.2
PPPM
PPPM
(W)
PPPM(25°C)
102
0.8
10
0.4
1
10−2
10−1
1
10
102
0
103
tp (ms)
0
50
100
150
200
Tj (°C)
MMBZ27VCL: unidirectional and bidirectional
Tamb = 25 °C
Fig 3.
Rated peak pulse power as a function of
exponential pulse duration (rectangular
waveform); typical values
Fig 4.
Relative variation of rated peak pulse power as
a function of junction temperature; typical
values
MMBZXVCL_MMBZXVDL_SER_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 3 September 2008
8 of 15
MMBZxVCL; MMBZxVDL series
NXP Semiconductors
Double ESD protection diodes for transient overvoltage suppression
006aab328
100
006aab329
102
IRM
(nA)
Cd
(pF)
80
10
1
60
10−1
40
(1)
(2)
10−2
(3)
20
(4)
10−3
−75
0
0
5
10
15
20
25
VR (V)
f = 1 MHz; Tamb = 25 °C
−25
25
75
125
175
Tamb (°C)
MMBZ27VCL: VRWM = 22 V
(1) MMBZ15VDL: unidirectional
(2) MMBZ15VDL: bidirectional
(3) MMBZ27VCL: unidirectional
(4) MMBZ27VCL: bidirectional
Fig 5.
Diode capacitance as a function of reverse
voltage; typical values
Fig 6.
Reverse leakage current as a function of
junction temperature; typical values
I
IPPM
IPP
−VCL −VBR −VRWM
V
−IRM
−IR
−
−VCL −VBR −VRWM
IR
IRM
−IRM
−IR
+
P-N
−
−IPP
−IPPM
Fig 7.
+
−IPP
−IPPM
006aab324
V-I characteristics for a unidirectional
ESD protection diode
Fig 8.
006aab325
V-I characteristics for a bidirectional
ESD protection diode
MMBZXVCL_MMBZXVDL_SER_1
Product data sheet
VRWM VBR VCL
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 3 September 2008
9 of 15
MMBZxVCL; MMBZxVDL series
NXP Semiconductors
Double ESD protection diodes for transient overvoltage suppression
8. Application information
The MMBZxVCL series and the MMBZxVDL series are designed for the protection of up
to two unidirectional data or signal lines from the damage caused by ESD and surge
pulses. The devices may be used on lines where the signal polarities are either positive or
negative with respect to ground. The devices provide a surge capability of 40 W per line
for a 10/1000 µs waveform.
line 1 to be protected
line 1 to be protected
line 2 to be protected
MMBZxVCL/VDL
GND
unidirectional protection
of two lines
MMBZxVCL/VDL
GND
bidirectional protection
of one line
006aab330
Fig 9.
Typical application: ESD and transient voltage protection of data lines
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the devices as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
9. Test information
9.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
MMBZXVCL_MMBZXVDL_SER_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 3 September 2008
10 of 15
MMBZxVCL; MMBZxVDL series
NXP Semiconductors
Double ESD protection diodes for transient overvoltage suppression
10. Package outline
3.0
2.8
1.1
0.9
3
0.45
0.15
2.5 1.4
2.1 1.2
1
2
1.9
0.48
0.38
Dimensions in mm
0.15
0.09
04-11-04
Fig 10. Package outline SOT23 (TO-236AB)
11. Packing information
Table 11. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
MMBZ12VDL
Package
Description
Packing quantity
3000
10000
SOT23
4 mm pitch, 8 mm tape and reel
-215
-235
SOT23
4 mm pitch, 8 mm tape and reel
-215
-235
MMBZ15VDL
MMBZ18VCL
MMBZ20VCL
MMBZ27VCL
MMBZ33VCL
MMBZ12VDL/DG
MMBZ15VDL/DG
MMBZ18VCL/DG
MMBZ20VCL/DG
MMBZ27VCL/DG
MMBZ33VCL/DG
[1]
For further information and the availability of packing methods, see Section 15.
MMBZXVCL_MMBZXVDL_SER_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 3 September 2008
11 of 15
MMBZxVCL; MMBZxVDL series
NXP Semiconductors
Double ESD protection diodes for transient overvoltage suppression
12. Soldering
3.3
2.9
1.9
solder lands
solder resist
3
2
1.7
solder paste
0.6
(3×)
0.7
(3×)
occupied area
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
Fig 11. Reflow soldering footprint SOT23 (TO-236AB)
2.2
1.2
(2×)
1.4
(2×)
solder lands
4.6
solder resist
2.6
occupied area
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig 12. Wave soldering footprint SOT23 (TO-236AB)
MMBZXVCL_MMBZXVDL_SER_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 3 September 2008
12 of 15
MMBZxVCL; MMBZxVDL series
NXP Semiconductors
Double ESD protection diodes for transient overvoltage suppression
13. Revision history
Table 12.
Revision history
Document ID
Release date
MMBZXVCL_MMBZXVDL_SER_1 20080903
Data sheet status
Change notice
Supersedes
Product data sheet
-
-
MMBZXVCL_MMBZXVDL_SER_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 3 September 2008
13 of 15
MMBZxVCL; MMBZxVDL series
NXP Semiconductors
Double ESD protection diodes for transient overvoltage suppression
14. Legal information
14.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
14.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
14.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
ESD protection devices — These products are only intended for protection
against ElectroStatic Discharge (ESD) pulses and are not intended for any
other usage including, without limitation, voltage regulation applications. NXP
Semiconductors accepts no liability for use in such applications and therefore
such use is at the customer’s own risk.
14.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
15. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
MMBZXVCL_MMBZXVDL_SER_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 3 September 2008
14 of 15
NXP Semiconductors
MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
16. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
10
11
12
13
14
14.1
14.2
14.3
14.4
15
16
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 3
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics. . . . . . . . . . . . . . . . . . . 5
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Application information. . . . . . . . . . . . . . . . . . 10
Test information . . . . . . . . . . . . . . . . . . . . . . . . 10
Quality information . . . . . . . . . . . . . . . . . . . . . 10
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Packing information. . . . . . . . . . . . . . . . . . . . . 11
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 3 September 2008
Document identifier: MMBZXVCL_MMBZXVDL_SER_1
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