Data Sheet

SO
T3
23
PESD1IVN-U
In-vehicle network ESD protection diode
15 July 2015
Product data sheet
1. General description
ElectroStatic Discharge (ESD) protection diode in a small SOT323 (SC-70) SurfaceMounted Device (SMD) plastic package designed to protect one automotive in-vehicle
network line from the damage caused by ESD and other transients.
2. Features and benefits
•
•
•
•
•
One small SOT323 package to protect one in-vehicle network line
Low clamping voltage: VCL = 38 V at IPP = 1 A
ESD protection up to 18 kV; IEC 61000-4-2, level 4
IEC 61000-4-5 (surge); IPP = 3 A at tp = 8/20 µs
AEC-Q101 qualified
3. Applications
•
•
In-vehicle network ESD protection for CAN, LIN, FlexRay and Single Edge Nibble
Transmission (SENT) interfaces
Generic automotive applications
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRWM
reverse standoff
voltage
Tamb = 25 °C
-
-
26.5
V
Cd
diode capacitance
f = 1 MHz; VR = 0 V; Tamb = 25 °C
-
8.5
11
pF
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In-vehicle network ESD protection diode
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
K1
cathode 1
2
n.c.
not connected
3
K2
cathode 2
Simplified outline
Graphic symbol
3
1
3
2
aaa-018783
1
2
SC-70 (SOT323)
6. Ordering information
Table 3.
Ordering information
Type number
PESD1IVN-U
Package
Name
Description
Version
SC-70
plastic surface-mounted package; 3 leads
SOT323
7. Marking
Table 4.
Marking codes
Type number
Marking code
[1]
PESD1IVN-U
3X%
[1]
PESD1IVN-U
Product data sheet
% = placeholder for manufacturing site code
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In-vehicle network ESD protection diode
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
PPPM
rated peak pulse power
tp = 8/20 µs
[1][2]
-
150
W
IPPM
rated peak pulse current
[1][2]
-
3
A
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
ESD maximum ratings
VESD
electrostatic discharge voltage
[1]
[2]
[3]
IEC 61000-4-2; contact discharge
[2][3]
-
18
kV
MIL-STD-883 (human body model)
[2][3]
-
10
kV
Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5 and IEC
61643-321.
Measured from pin 1 to 3.
Device stressed with ten non-repetitive ESD pulses.
001aaa631
001aaa630
120
IPP
100 %
100 % IPP; 8 µs
IPP
(%)
80
90 %
e- t
50 % IPP; 20 µs
40
10 %
0
Fig. 1.
0
10
20
30
t (µs)
8/20 µs pulse waveform according to
IEC 61000-4-5 and IEC 61643-321
PESD1IVN-U
Product data sheet
tr = 0.6 ns to 1 ns
40
t
30 ns
60 ns
Fig. 2.
ESD pulse waveform according to
IEC 61000-4-2
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In-vehicle network ESD protection diode
IPPM
IPP
-VCL -VBR -VRWM
IR
IRM
-IRM
-IR
VRWM VBR VCL
-
+
-IPP
-IPPM
Fig. 3.
006aab325
V-I characteristics for a bidirectional ESD protection diode
9. Characteristics
Table 6.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRWM
reverse standoff
voltage
Tamb = 25 °C
-
-
26.5
V
IRM
reverse leakage
current
VRWM = 26.5 V; Tamb = 25 °C
-
1
50
nA
VBR
breakdown voltage
IR = 5 mA; Tamb = 25 °C
28
30
32
V
Cd
diode capacitance
f = 1 MHz; VR = 0 V; Tamb = 25 °C
-
8.5
11
pF
f = 1 MHz; VR = 2.5 V; Tamb = 25 °C
-
6.6
-
pF
VCL
Rdyn
clamping voltage
dynamic resistance
[1]
[2]
[3]
PESD1IVN-U
Product data sheet
IPP = 1 A; Tamb = 25 °C
[1][2]
-
-
38
V
IPPM = 3 A; Tamb = 25 °C
[1][2]
-
-
53
V
IR = 20 A; Tamb = 25 °C
[3]
-
2
-
Ω
Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5 and IEC
61643-321.
Measured from pin 1 to 3.
Non-repetitive current pulse, Transmission line Pulse (TLP), square pulse, ANSI/ESD STM5.5.1-2008.
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In-vehicle network ESD protection diode
aaa-018721
102
006aab321
1.2
PPPM
PPPM(25°C)
PPPM
(W)
0.8
10
0.4
1
10
102
103
tp (µs)
0
104
Tamb = 25 °C
Fig. 4.
Fig. 5.
Rated peak pulse power as a function of square
pulse duration; typical values
0
50
100
150
Tj (°C)
200
Relative variation of rated peak pulse power
as a function of junction temperature; typical
values
aaa-018722
15
Cd
(pF)
10
5
0
-30
-10
10
VR (V)
30
f = 1 MHz; Tamb = 25 °C
Fig. 6.
Diode capacitance as a function of reverse voltage; typical values
PESD1IVN-U
Product data sheet
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In-vehicle network ESD protection diode
ESD TESTER
4 GHz DIGITAL
OSCILLOSCOPE
RG 223/U
50 Ω coax
Rd
40 dB
ATTENUATOR
Cs
50 Ω
DUT
(DEVICE
UNDER
TEST)
IEC 61000-4-2 ed.2
Cs = 150 pF; Rd = 330 Ω
10
2
V
(kV) 8
V
(kV) 0
6
-2
4
-4
2
-6
0
-8
-2
-10
0
10
20
30
40
50
t (ns)
60
-10
-10
70
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
0
10
20
30
40
50
t (ns)
60
70
unclamped -8 kV ESD pulse waveform
(IEC 61000-4-2 network)
aaa-003952
Fig. 7.
ESD clamping test setup and waveforms
aaa-018725
250
aaa-018726
50
VCL
(V)
VCL
(V)
150
-50
VCL at 30 ns = 51 V
VCL at 30 ns = -50 V
50
-50
-10
Fig. 8.
-150
0
10
20
30
40
50
60
t (ns)
-250
-10
70
Clamped +8 kV pulse waveform (IEC 61000-4-2
network)
PESD1IVN-U
Product data sheet
Fig. 9.
0
20
30
40
50
60
t (ns)
70
Clamped -8 kV pulse waveform (IEC 61000-4-2
network)
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10. Application information
The device is designed for the protection of one automotive in-vehicle network bus line
from surge pulses and ESD damage. The device provides a surge capability of up to 3 A
for an 8/20 µs waveform.
SPLIT
CANH
RT/2
CAN BUS
TRANSCEIVER
CAN
bus
RT/2
CANL
Common
mode choke
(optional)
n.c.
2
1
CG
n.c.
2
1
3
3
PESD1IVN-U
PESD1IVN-U
aaa-018723
Fig. 10. Typical application: ESD protection of one automotive CAN bus line
power application (e.g. electro motor, inductive loads)
application (e.g. voltage regulator and microcontroller)
CBAT
BAT
LIN
LIN
transceiver
n.c.
2
1
LIN node
connector
CMASTER/SLAVE
GND
3
PESD1IVN-U
aaa-018724
Fig. 11. Typical application: ESD protection of one automotive LIN bus line
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1.
2.
3.
4.
5.
Place the device as close to the input terminal or connector as possible.
Minimize the path length between the device and the protected line.
Keep parallel signal paths to a minimum.
Avoid running protected conductors in parallel with unprotected conductors.
Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
PESD1IVN-U
Product data sheet
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7. Avoid using shared transient return paths to a common ground point.
8. Use ground planes whenever possible. For multilayer PCBs, use ground vias.
11. Package outline
2.2
1.8
1.1
0.8
0.45
0.15
3
2.2 1.35
2.0 1.15
1
2
0.4
0.3
1.3
0.25
0.10
Dimensions in mm
04-11-04
Fig. 12. Package outline SC-70 (SOT323)
12. Soldering
2.65
1.85
1.325
solder lands
solder resist
2
2.35
0.6
(3×)
3
1.3
1
0.5
(3×)
solder paste
occupied area
Dimensions in mm
0.55
(3×)
sot323_fr
Fig. 13. Reflow soldering footprint for SC-70 (SOT323)
PESD1IVN-U
Product data sheet
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In-vehicle network ESD protection diode
4.6
2.575
1.425
(3×)
solder lands
solder resist
occupied area
1.8
3.65 2.1
09
(2×)
Dimensions in mm
preferred transport
direction during soldering
sot323_fw
Fig. 14. Wave soldering footprint for SC-70 (SOT323)
PESD1IVN-U
Product data sheet
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13. Revision history
Table 7.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PESD1IVN-U v.1
20150715
Product data sheet
-
-
PESD1IVN-U
Product data sheet
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In-vehicle network ESD protection diode
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
14. Legal information
14.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Right to make changes — NXP Semiconductors reserves the right to
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limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Please consult the most recently issued document before initiating or
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The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
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Preview — The document is a preview version only. The document is still
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Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
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data sheet shall define the specification of the product as agreed between
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customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
14.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
PESD1IVN-U
Product data sheet
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their
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damage, costs or problem which is based on any weakness or default
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and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
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14.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,
HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,
MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
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In-vehicle network ESD protection diode
15. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................3
9
Characteristics ....................................................... 4
10
Application information .........................................7
11
Package outline ..................................................... 8
12
Soldering ................................................................ 8
13
Revision history ................................................... 10
14
14.1
14.2
14.3
14.4
Legal information .................................................11
Data sheet status ............................................... 11
Definitions ...........................................................11
Disclaimers .........................................................11
Trademarks ........................................................ 12
© NXP Semiconductors N.V. 2015. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 15 July 2015
PESD1IVN-U
Product data sheet
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