SO T3 23 PESD1IVN-U In-vehicle network ESD protection diode 15 July 2015 Product data sheet 1. General description ElectroStatic Discharge (ESD) protection diode in a small SOT323 (SC-70) SurfaceMounted Device (SMD) plastic package designed to protect one automotive in-vehicle network line from the damage caused by ESD and other transients. 2. Features and benefits • • • • • One small SOT323 package to protect one in-vehicle network line Low clamping voltage: VCL = 38 V at IPP = 1 A ESD protection up to 18 kV; IEC 61000-4-2, level 4 IEC 61000-4-5 (surge); IPP = 3 A at tp = 8/20 µs AEC-Q101 qualified 3. Applications • • In-vehicle network ESD protection for CAN, LIN, FlexRay and Single Edge Nibble Transmission (SENT) interfaces Generic automotive applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VRWM reverse standoff voltage Tamb = 25 °C - - 26.5 V Cd diode capacitance f = 1 MHz; VR = 0 V; Tamb = 25 °C - 8.5 11 pF Scan or click this QR code to view the latest information for this product PESD1IVN-U NXP Semiconductors In-vehicle network ESD protection diode 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K1 cathode 1 2 n.c. not connected 3 K2 cathode 2 Simplified outline Graphic symbol 3 1 3 2 aaa-018783 1 2 SC-70 (SOT323) 6. Ordering information Table 3. Ordering information Type number PESD1IVN-U Package Name Description Version SC-70 plastic surface-mounted package; 3 leads SOT323 7. Marking Table 4. Marking codes Type number Marking code [1] PESD1IVN-U 3X% [1] PESD1IVN-U Product data sheet % = placeholder for manufacturing site code All information provided in this document is subject to legal disclaimers. 15 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 13 PESD1IVN-U NXP Semiconductors In-vehicle network ESD protection diode 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit PPPM rated peak pulse power tp = 8/20 µs [1][2] - 150 W IPPM rated peak pulse current [1][2] - 3 A Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C ESD maximum ratings VESD electrostatic discharge voltage [1] [2] [3] IEC 61000-4-2; contact discharge [2][3] - 18 kV MIL-STD-883 (human body model) [2][3] - 10 kV Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5 and IEC 61643-321. Measured from pin 1 to 3. Device stressed with ten non-repetitive ESD pulses. 001aaa631 001aaa630 120 IPP 100 % 100 % IPP; 8 µs IPP (%) 80 90 % e- t 50 % IPP; 20 µs 40 10 % 0 Fig. 1. 0 10 20 30 t (µs) 8/20 µs pulse waveform according to IEC 61000-4-5 and IEC 61643-321 PESD1IVN-U Product data sheet tr = 0.6 ns to 1 ns 40 t 30 ns 60 ns Fig. 2. ESD pulse waveform according to IEC 61000-4-2 All information provided in this document is subject to legal disclaimers. 15 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 3 / 13 PESD1IVN-U NXP Semiconductors In-vehicle network ESD protection diode IPPM IPP -VCL -VBR -VRWM IR IRM -IRM -IR VRWM VBR VCL - + -IPP -IPPM Fig. 3. 006aab325 V-I characteristics for a bidirectional ESD protection diode 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit VRWM reverse standoff voltage Tamb = 25 °C - - 26.5 V IRM reverse leakage current VRWM = 26.5 V; Tamb = 25 °C - 1 50 nA VBR breakdown voltage IR = 5 mA; Tamb = 25 °C 28 30 32 V Cd diode capacitance f = 1 MHz; VR = 0 V; Tamb = 25 °C - 8.5 11 pF f = 1 MHz; VR = 2.5 V; Tamb = 25 °C - 6.6 - pF VCL Rdyn clamping voltage dynamic resistance [1] [2] [3] PESD1IVN-U Product data sheet IPP = 1 A; Tamb = 25 °C [1][2] - - 38 V IPPM = 3 A; Tamb = 25 °C [1][2] - - 53 V IR = 20 A; Tamb = 25 °C [3] - 2 - Ω Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5 and IEC 61643-321. Measured from pin 1 to 3. Non-repetitive current pulse, Transmission line Pulse (TLP), square pulse, ANSI/ESD STM5.5.1-2008. All information provided in this document is subject to legal disclaimers. 15 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 4 / 13 PESD1IVN-U NXP Semiconductors In-vehicle network ESD protection diode aaa-018721 102 006aab321 1.2 PPPM PPPM(25°C) PPPM (W) 0.8 10 0.4 1 10 102 103 tp (µs) 0 104 Tamb = 25 °C Fig. 4. Fig. 5. Rated peak pulse power as a function of square pulse duration; typical values 0 50 100 150 Tj (°C) 200 Relative variation of rated peak pulse power as a function of junction temperature; typical values aaa-018722 15 Cd (pF) 10 5 0 -30 -10 10 VR (V) 30 f = 1 MHz; Tamb = 25 °C Fig. 6. Diode capacitance as a function of reverse voltage; typical values PESD1IVN-U Product data sheet All information provided in this document is subject to legal disclaimers. 15 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 5 / 13 PESD1IVN-U NXP Semiconductors In-vehicle network ESD protection diode ESD TESTER 4 GHz DIGITAL OSCILLOSCOPE RG 223/U 50 Ω coax Rd 40 dB ATTENUATOR Cs 50 Ω DUT (DEVICE UNDER TEST) IEC 61000-4-2 ed.2 Cs = 150 pF; Rd = 330 Ω 10 2 V (kV) 8 V (kV) 0 6 -2 4 -4 2 -6 0 -8 -2 -10 0 10 20 30 40 50 t (ns) 60 -10 -10 70 unclamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) 0 10 20 30 40 50 t (ns) 60 70 unclamped -8 kV ESD pulse waveform (IEC 61000-4-2 network) aaa-003952 Fig. 7. ESD clamping test setup and waveforms aaa-018725 250 aaa-018726 50 VCL (V) VCL (V) 150 -50 VCL at 30 ns = 51 V VCL at 30 ns = -50 V 50 -50 -10 Fig. 8. -150 0 10 20 30 40 50 60 t (ns) -250 -10 70 Clamped +8 kV pulse waveform (IEC 61000-4-2 network) PESD1IVN-U Product data sheet Fig. 9. 0 20 30 40 50 60 t (ns) 70 Clamped -8 kV pulse waveform (IEC 61000-4-2 network) All information provided in this document is subject to legal disclaimers. 15 July 2015 10 © NXP Semiconductors N.V. 2015. All rights reserved 6 / 13 PESD1IVN-U NXP Semiconductors In-vehicle network ESD protection diode 10. Application information The device is designed for the protection of one automotive in-vehicle network bus line from surge pulses and ESD damage. The device provides a surge capability of up to 3 A for an 8/20 µs waveform. SPLIT CANH RT/2 CAN BUS TRANSCEIVER CAN bus RT/2 CANL Common mode choke (optional) n.c. 2 1 CG n.c. 2 1 3 3 PESD1IVN-U PESD1IVN-U aaa-018723 Fig. 10. Typical application: ESD protection of one automotive CAN bus line power application (e.g. electro motor, inductive loads) application (e.g. voltage regulator and microcontroller) CBAT BAT LIN LIN transceiver n.c. 2 1 LIN node connector CMASTER/SLAVE GND 3 PESD1IVN-U aaa-018724 Fig. 11. Typical application: ESD protection of one automotive LIN bus line Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. 2. 3. 4. 5. Place the device as close to the input terminal or connector as possible. Minimize the path length between the device and the protected line. Keep parallel signal paths to a minimum. Avoid running protected conductors in parallel with unprotected conductors. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. PESD1IVN-U Product data sheet All information provided in this document is subject to legal disclaimers. 15 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 7 / 13 PESD1IVN-U NXP Semiconductors In-vehicle network ESD protection diode 7. Avoid using shared transient return paths to a common ground point. 8. Use ground planes whenever possible. For multilayer PCBs, use ground vias. 11. Package outline 2.2 1.8 1.1 0.8 0.45 0.15 3 2.2 1.35 2.0 1.15 1 2 0.4 0.3 1.3 0.25 0.10 Dimensions in mm 04-11-04 Fig. 12. Package outline SC-70 (SOT323) 12. Soldering 2.65 1.85 1.325 solder lands solder resist 2 2.35 0.6 (3×) 3 1.3 1 0.5 (3×) solder paste occupied area Dimensions in mm 0.55 (3×) sot323_fr Fig. 13. Reflow soldering footprint for SC-70 (SOT323) PESD1IVN-U Product data sheet All information provided in this document is subject to legal disclaimers. 15 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 8 / 13 PESD1IVN-U NXP Semiconductors In-vehicle network ESD protection diode 4.6 2.575 1.425 (3×) solder lands solder resist occupied area 1.8 3.65 2.1 09 (2×) Dimensions in mm preferred transport direction during soldering sot323_fw Fig. 14. Wave soldering footprint for SC-70 (SOT323) PESD1IVN-U Product data sheet All information provided in this document is subject to legal disclaimers. 15 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 9 / 13 PESD1IVN-U NXP Semiconductors In-vehicle network ESD protection diode 13. Revision history Table 7. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PESD1IVN-U v.1 20150715 Product data sheet - - PESD1IVN-U Product data sheet All information provided in this document is subject to legal disclaimers. 15 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 10 / 13 PESD1IVN-U NXP Semiconductors In-vehicle network ESD protection diode In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 14. 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PESD1IVN-U Product data sheet Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 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Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 15 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 11 / 13 PESD1IVN-U NXP Semiconductors In-vehicle network ESD protection diode No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 14.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Characteristics ....................................................... 4 10 Application information .........................................7 11 Package outline ..................................................... 8 12 Soldering ................................................................ 8 13 Revision history ................................................... 10 14 14.1 14.2 14.3 14.4 Legal information .................................................11 Data sheet status ............................................... 11 Definitions ...........................................................11 Disclaimers .........................................................11 Trademarks ........................................................ 12 © NXP Semiconductors N.V. 2015. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 15 July 2015 PESD1IVN-U Product data sheet All information provided in this document is subject to legal disclaimers. 15 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 13 / 13