PESD5V0L7BAS; PESD5V0L7BS Low capacitance 7-fold bidirectional ESD protection diode arrays Rev. 4 — 23 June 2010 Product data sheet 1. Product profile 1.1 General description Low capacitance 7-fold bidirectional ESD protection diode arrays in small plastic packages designed for the protection of up to seven transmission or data lines from damage caused by ElectroStatic Discharge (ESD) and other transients. Table 1. Product overview Type number Package Name NXP PESD5V0L7BAS TSSOP8 SOT505-1 PESD5V0L7BS SO8 SOT96-1 1.2 Features and benefits ESD protection of up to seven lines Low diode capacitance Max. peak pulse power: PPP = 35 W Low clamping voltage: VCL = 17 V Ultra low leakage current: IRM = 3 nA ESD protection of up to 10 kV IEC 61000-4-2, level 4 (ESD) IEC 61000-4-5 (surge); IPP = 2.5 A 1.3 Applications Computers and peripherals Communication systems Audio and video equipment High-speed data lines Parallel ports 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter VRWM reverse standoff voltage Cd diode capacitance Conditions VR = 0 V; f = 1 MHz Min Typ Max Unit - - 5 V - 8 10 pF PESD5V0L7BAS; PESD5V0L7BS NXP Semiconductors Low capacitance 7-fold bidirectional ESD protection diode arrays 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol TSSOP8 1 cathode 1 2 cathode 2 3 cathode 3 4 cathode 4 5 cathode 5 6 cathode 6 7 cathode 7 8 cathode 8 8 1 5 4 1 8 2 7 3 6 4 5 sym005 SO8 1 cathode 1 2 cathode 2 3 cathode 3 4 cathode 4 5 cathode 5 6 cathode 6 7 cathode 7 8 cathode 8 8 1 5 4 1 8 2 7 3 6 4 5 sym005 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PESD5V0L7BAS TSSOP8 plastic thin shrink small outline package; 8 leads; body width 3 mm SOT505-1 PESD5V0L7BS SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1 4. Marking Table 5. PESD5V0L7BAS_BS Product data sheet Marking codes Type number Marking code PESD5V0L7BAS 5V07B PESD5V0L7BS 5V0L7BS All information provided in this document is subject to legal disclaimers. Rev. 4 — 23 June 2010 © NXP B.V. 2010. All rights reserved. 2 of 15 NXP Semiconductors PESD5V0L7BAS; PESD5V0L7BS Low capacitance 7-fold bidirectional ESD protection diode arrays 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit PPP peak pulse power tp = 8/20 s [1] IPP peak pulse current tp = 8/20 s - 35 W [1] - 2.5 A Tj junction temperature - 150 C Tamb ambient temperature 65 +150 C Tstg storage temperature 65 +150 C Per diode [1] Non-repetitive current pulse 8/20 s exponentially decaying waveform according to IEC 61000-4-5; see Figure 1. Table 7. ESD maximum ratings Symbol Parameter Conditions VESD electrostatic discharge voltage IEC 61000-4-2 (contact discharge) MIL-STD-883 (human body model) [1] Max Unit - 10 kV - 10 kV ESD standards compliance Standard Product data sheet Min Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Figure 2. Table 8. PESD5V0L7BAS_BS [1] Conditions IEC 61000-4-2; level 4 (ESD); see Figure 2 > 8 kV (contact) MIL-STD-883; class 3 (human body model) > 4 kV All information provided in this document is subject to legal disclaimers. Rev. 4 — 23 June 2010 © NXP B.V. 2010. All rights reserved. 3 of 15 PESD5V0L7BAS; PESD5V0L7BS NXP Semiconductors Low capacitance 7-fold bidirectional ESD protection diode arrays 001aaa631 IPP 001aaa630 120 100 % 90 % 100 % IPP; 8 μs IPP (%) 80 e−t 50 % IPP; 20 μs 40 10 % 0 10 20 30 30 ns 40 t (μs) Fig 1. t tr = 0.7 ns to 1 ns 0 60 ns 8/20 s pulse waveform according to IEC 61000-4-5 Fig 2. ElectroStatic Discharge (ESD) pulse waveform according to IEC 61000-4-2 6. Characteristics Table 9. Characteristics Tamb = 25 C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit - - 5 V - 3 25 nA - - 11 V Per diode VRWM reverse standoff voltage IRM reverse leakage current clamping voltage VCL VRWM = 5 V; see Figure 6 IPP = 1 A [1] IPP = 2.5 A [1] - - 17 V VBR breakdown voltage IR = 1 mA 7.2 7.6 7.9 V rdif differential resistance IR = 1 mA - - 100 Cd diode capacitance VR = 0 V; f = 1 MHz; see Figure 5 - 8 10 pF [1] Non-repetitive current pulse 8/20 s exponentially decaying waveform according to IEC 61000-4-5; see Figure 1. PESD5V0L7BAS_BS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 23 June 2010 © NXP B.V. 2010. All rights reserved. 4 of 15 PESD5V0L7BAS; PESD5V0L7BS NXP Semiconductors Low capacitance 7-fold bidirectional ESD protection diode arrays 001aaa192 102 001aaa193 1.2 PPP PPP(25°C) PPP (W) 0.8 10 0.4 1 102 10 1 103 0 104 0 50 100 150 tp (μs) 200 Tj (°C) Tamb = 25 C Fig 3. Peak pulse power as a function of exponential pulse duration tp; typical values Fig 4. 001aaa142 9 Relative variation of peak pulse power as a function of junction temperature; typical values 001aaa143 10 Cd (pF) IRM IRM(25°C) 8 1 7 0 −100 6 0 1 2 3 4 5 −50 VR (V) 0 50 100 150 Tj (°C) Tamb = 25 C; f = 1 MHz Fig 5. Diode capacitance as a function of reverse voltage; typical values PESD5V0L7BAS_BS Product data sheet Fig 6. Relative variation of reverse leakage current as a function of junction temperature; typical values All information provided in this document is subject to legal disclaimers. Rev. 4 — 23 June 2010 © NXP B.V. 2010. All rights reserved. 5 of 15 PESD5V0L7BAS; PESD5V0L7BS NXP Semiconductors Low capacitance 7-fold bidirectional ESD protection diode arrays ESD TESTER RZ 450 Ω RG 223/U 50 Ω coax 10× ATTENUATOR 4 GHz DIGITAL OSCILLOSCOPE 50 Ω CZ IEC 61000-4-2 network CZ = 150 pF; RZ = 330 Ω DUT: PESD5V0L7BAS PESD5V0L7BS vertical scale = 200 V/div horizontal scale = 50 ns/div vertical scale = 10 V/div horizontal scale = 50 ns/div GND GND unclamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) clamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) GND GND vertical scale = 10 V/div horizontal scale = 50 ns/div vertical scale = 200 V/div horizontal scale = 50 ns/div unclamped −1 kV ESD voltage waveform (IEC 61000-4-2 network) clamped −1 kV ESD voltage waveform (IEC 61000-4-2 network) 006aaa062 Fig 7. ESD clamping test setup and waveforms PESD5V0L7BAS_BS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 23 June 2010 © NXP B.V. 2010. All rights reserved. 6 of 15 PESD5V0L7BAS; PESD5V0L7BS NXP Semiconductors Low capacitance 7-fold bidirectional ESD protection diode arrays 7. Application information The PESD5V0L7BAS and the PESD5V0L7BS are designed for the protection of up to seven bidirectional data lines from the damage caused by ElectroStatic Discharge (ESD) and surge pulses. The PESD5V0L7BAS and the PESD5V0L7BS may be used on lines where the signal polarities are above and below ground. The PESD5V0L7BAS and the PESD5V0L7BS provide a surge capability of 35 W per line for a 8/20 s waveform. high-speed data lines PESD5V0L7BAS PESD5V0L7BS GND 006aaa063 Fig 8. Typical application for ESD protection of seven lines carrying bidirectional data Circuit board layout and protection device placement: Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. Place the device as close to the input terminal or connector as possible. 2. The path length between the device and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer PCBs, use ground vias. PESD5V0L7BAS_BS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 23 June 2010 © NXP B.V. 2010. All rights reserved. 7 of 15 PESD5V0L7BAS; PESD5V0L7BS NXP Semiconductors Low capacitance 7-fold bidirectional ESD protection diode arrays 8. Package outline TSSOP8: plastic thin shrink small outline package; 8 leads; body width 3 mm D E SOT505-1 A X c y HE v M A Z 5 8 A2 pin 1 index (A3) A1 A θ Lp L 1 4 detail X e w M bp 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 A2 A3 bp c D(1) E(2) e HE L Lp v w y Z(1) θ mm 1.1 0.15 0.05 0.95 0.80 0.25 0.45 0.25 0.28 0.15 3.1 2.9 3.1 2.9 0.65 5.1 4.7 0.94 0.7 0.4 0.1 0.1 0.1 0.70 0.35 6° 0° Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC JEITA ISSUE DATE 99-04-09 03-02-18 SOT505-1 Fig 9. EUROPEAN PROJECTION Package outline SOT505-1 (TSSOP8) PESD5V0L7BAS_BS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 23 June 2010 © NXP B.V. 2010. All rights reserved. 8 of 15 PESD5V0L7BAS; PESD5V0L7BS NXP Semiconductors Low capacitance 7-fold bidirectional ESD protection diode arrays SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1 D E A X c y HE v M A Z 5 8 Q A2 A (A 3) A1 pin 1 index θ Lp 1 L 4 e detail X w M bp 0 2.5 5 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (2) e HE L Lp Q v w y Z (1) mm 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 5.0 4.8 4.0 3.8 1.27 6.2 5.8 1.05 1.0 0.4 0.7 0.6 0.25 0.25 0.1 0.7 0.3 inches 0.069 0.010 0.057 0.004 0.049 0.01 0.019 0.0100 0.014 0.0075 0.20 0.19 0.16 0.15 0.05 0.01 0.01 0.004 0.028 0.012 0.244 0.039 0.028 0.041 0.228 0.016 0.024 θ 8o o 0 Notes 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT96-1 076E03 MS-012 JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-27 03-02-18 Fig 10. Package outline SOT96-1 (SO8/MS-012) PESD5V0L7BAS_BS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 23 June 2010 © NXP B.V. 2010. All rights reserved. 9 of 15 PESD5V0L7BAS; PESD5V0L7BS NXP Semiconductors Low capacitance 7-fold bidirectional ESD protection diode arrays 9. Packing information Table 10. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 1000 2500 PESD5V0L7BAS SOT505-1 8 mm pitch, 12 mm tape and reel - -118 PESD5V0L7BS 8 mm pitch, 12 mm tape and reel -115 -118 [1] SOT96-1 For further information and the availability of packing methods, see Section 13. 10. Soldering 3.600 2.950 0.125 0.725 0.125 5.750 3.200 3.600 5.500 0.125 0.600 0.450 0.650 solder lands occupied area Dimensions in mm sot505-1_fr Reflow soldering is the only recommended soldering method. Fig 11. Reflow soldering footprint SOT505-1 (TSSOP8) PESD5V0L7BAS_BS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 23 June 2010 © NXP B.V. 2010. All rights reserved. 10 of 15 PESD5V0L7BAS; PESD5V0L7BS NXP Semiconductors Low capacitance 7-fold bidirectional ESD protection diode arrays 5.50 0.60 (8×) 1.30 4.00 6.60 7.00 1.27 (6×) solder lands occupied area placement accuracy ± 0.25 Dimensions in mm sot096-1_fr Fig 12. Reflow soldering footprint SOT96-1 (SO8/MS-012) 1.20 (2×) 0.60 (6×) enlarged solder land 0.3 (2×) 1.30 4.00 6.60 7.00 1.27 (6×) 5.50 board direction solder lands occupied area solder resist placement accurracy ± 0.25 Dimensions in mm sot096-1_fw Fig 13. Wave soldering footprint SOT96-1 (SO8/MS-012) PESD5V0L7BAS_BS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 23 June 2010 © NXP B.V. 2010. All rights reserved. 11 of 15 PESD5V0L7BAS; PESD5V0L7BS NXP Semiconductors Low capacitance 7-fold bidirectional ESD protection diode arrays 11. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes PESD5V0L7BAS_BS v.4 20100623 Product data sheet - PESD5V0L7BAS_BS_3 Modifications: • • • Section 4 “Marking”: marking code corrected for PESD5V0L7BAS Section 10 “Soldering”: added Section 12 “Legal information”: updated PESD5V0L7BAS_BS_3 20090820 Product data sheet - PESD5V0L7BAS_BS_2 PESD5V0L7BAS_BS_2 20041125 Product data sheet - PESD5V0L7BS_1 PESD5V0L7BS_1 20040315 Product specification - - PESD5V0L7BAS_BS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 23 June 2010 © NXP B.V. 2010. All rights reserved. 12 of 15 PESD5V0L7BAS; PESD5V0L7BS NXP Semiconductors Low capacitance 7-fold bidirectional ESD protection diode arrays 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 12.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. PESD5V0L7BAS_BS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 23 June 2010 © NXP B.V. 2010. All rights reserved. 13 of 15 NXP Semiconductors PESD5V0L7BAS; PESD5V0L7BS Low capacitance 7-fold bidirectional ESD protection diode arrays Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PESD5V0L7BAS_BS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 23 June 2010 © NXP B.V. 2010. All rights reserved. 14 of 15 NXP Semiconductors PESD5V0L7BAS; PESD5V0L7BS Low capacitance 7-fold bidirectional ESD protection diode arrays 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packing information . . . . . . . . . . . . . . . . . . . . 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 23 June 2010 Document identifier: PESD5V0L7BAS_BS