Data Sheet

PESD5V0L7BAS;
PESD5V0L7BS
Low capacitance 7-fold bidirectional ESD protection diode
arrays
Rev. 4 — 23 June 2010
Product data sheet
1. Product profile
1.1 General description
Low capacitance 7-fold bidirectional ESD protection diode arrays in small plastic
packages designed for the protection of up to seven transmission or data lines from
damage caused by ElectroStatic Discharge (ESD) and other transients.
Table 1.
Product overview
Type number
Package
Name
NXP
PESD5V0L7BAS
TSSOP8
SOT505-1
PESD5V0L7BS
SO8
SOT96-1
1.2 Features and benefits




ESD protection of up to seven lines
Low diode capacitance
Max. peak pulse power: PPP = 35 W
Low clamping voltage: VCL = 17 V




Ultra low leakage current: IRM = 3 nA
ESD protection of up to 10 kV
IEC 61000-4-2, level 4 (ESD)
IEC 61000-4-5 (surge); IPP = 2.5 A
1.3 Applications
 Computers and peripherals
 Communication systems
 Audio and video equipment
 High-speed data lines
 Parallel ports
1.4 Quick reference data
Table 2.
Quick reference data
Symbol
Parameter
VRWM
reverse standoff voltage
Cd
diode capacitance
Conditions
VR = 0 V;
f = 1 MHz
Min
Typ
Max
Unit
-
-
5
V
-
8
10
pF
PESD5V0L7BAS; PESD5V0L7BS
NXP Semiconductors
Low capacitance 7-fold bidirectional ESD protection diode arrays
2. Pinning information
Table 3.
Pinning
Pin
Description
Simplified outline
Graphic symbol
TSSOP8
1
cathode 1
2
cathode 2
3
cathode 3
4
cathode 4
5
cathode 5
6
cathode 6
7
cathode 7
8
cathode 8
8
1
5
4
1
8
2
7
3
6
4
5
sym005
SO8
1
cathode 1
2
cathode 2
3
cathode 3
4
cathode 4
5
cathode 5
6
cathode 6
7
cathode 7
8
cathode 8
8
1
5
4
1
8
2
7
3
6
4
5
sym005
3. Ordering information
Table 4.
Ordering information
Type number
Package
Name
Description
Version
PESD5V0L7BAS
TSSOP8
plastic thin shrink small outline package; 8 leads;
body width 3 mm
SOT505-1
PESD5V0L7BS
SO8
plastic small outline package; 8 leads;
body width 3.9 mm
SOT96-1
4. Marking
Table 5.
PESD5V0L7BAS_BS
Product data sheet
Marking codes
Type number
Marking code
PESD5V0L7BAS
5V07B
PESD5V0L7BS
5V0L7BS
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 23 June 2010
© NXP B.V. 2010. All rights reserved.
2 of 15
NXP Semiconductors
PESD5V0L7BAS; PESD5V0L7BS
Low capacitance 7-fold bidirectional ESD protection diode arrays
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
PPP
peak pulse power
tp = 8/20 s
[1]
IPP
peak pulse current
tp = 8/20 s
-
35
W
[1]
-
2.5
A
Tj
junction temperature
-
150
C
Tamb
ambient temperature
65
+150
C
Tstg
storage temperature
65
+150
C
Per diode
[1]
Non-repetitive current pulse 8/20 s exponentially decaying waveform according to IEC 61000-4-5;
see Figure 1.
Table 7.
ESD maximum ratings
Symbol
Parameter
Conditions
VESD
electrostatic discharge voltage
IEC 61000-4-2
(contact discharge)
MIL-STD-883
(human body
model)
[1]
Max
Unit
-
10
kV
-
10
kV
ESD standards compliance
Standard
Product data sheet
Min
Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Figure 2.
Table 8.
PESD5V0L7BAS_BS
[1]
Conditions
IEC 61000-4-2; level 4 (ESD); see Figure 2
> 8 kV (contact)
MIL-STD-883; class 3 (human body model)
> 4 kV
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 23 June 2010
© NXP B.V. 2010. All rights reserved.
3 of 15
PESD5V0L7BAS; PESD5V0L7BS
NXP Semiconductors
Low capacitance 7-fold bidirectional ESD protection diode arrays
001aaa631
IPP
001aaa630
120
100 %
90 %
100 % IPP; 8 μs
IPP
(%)
80
e−t
50 % IPP; 20 μs
40
10 %
0
10
20
30
30 ns
40
t (μs)
Fig 1.
t
tr = 0.7 ns to 1 ns
0
60 ns
8/20 s pulse waveform according to
IEC 61000-4-5
Fig 2.
ElectroStatic Discharge (ESD) pulse waveform
according to IEC 61000-4-2
6. Characteristics
Table 9.
Characteristics
Tamb = 25 C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
-
-
5
V
-
3
25
nA
-
-
11
V
Per diode
VRWM
reverse standoff voltage
IRM
reverse leakage current
clamping voltage
VCL
VRWM = 5 V; see Figure 6
IPP = 1 A
[1]
IPP = 2.5 A
[1]
-
-
17
V
VBR
breakdown voltage
IR = 1 mA
7.2
7.6
7.9
V
rdif
differential resistance
IR = 1 mA
-
-
100

Cd
diode capacitance
VR = 0 V; f = 1 MHz;
see Figure 5
-
8
10
pF
[1]
Non-repetitive current pulse 8/20 s exponentially decaying waveform according to IEC 61000-4-5; see Figure 1.
PESD5V0L7BAS_BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 23 June 2010
© NXP B.V. 2010. All rights reserved.
4 of 15
PESD5V0L7BAS; PESD5V0L7BS
NXP Semiconductors
Low capacitance 7-fold bidirectional ESD protection diode arrays
001aaa192
102
001aaa193
1.2
PPP
PPP(25°C)
PPP
(W)
0.8
10
0.4
1
102
10
1
103
0
104
0
50
100
150
tp (μs)
200
Tj (°C)
Tamb = 25 C
Fig 3.
Peak pulse power as a function of exponential
pulse duration tp; typical values
Fig 4.
001aaa142
9
Relative variation of peak pulse power as a
function of junction temperature; typical
values
001aaa143
10
Cd
(pF)
IRM
IRM(25°C)
8
1
7
0
−100
6
0
1
2
3
4
5
−50
VR (V)
0
50
100
150
Tj (°C)
Tamb = 25 C; f = 1 MHz
Fig 5.
Diode capacitance as a function of reverse
voltage; typical values
PESD5V0L7BAS_BS
Product data sheet
Fig 6.
Relative variation of reverse leakage current
as a function of junction temperature; typical
values
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 23 June 2010
© NXP B.V. 2010. All rights reserved.
5 of 15
PESD5V0L7BAS; PESD5V0L7BS
NXP Semiconductors
Low capacitance 7-fold bidirectional ESD protection diode arrays
ESD TESTER
RZ
450 Ω
RG 223/U
50 Ω coax
10×
ATTENUATOR
4 GHz DIGITAL
OSCILLOSCOPE
50 Ω
CZ
IEC 61000-4-2 network
CZ = 150 pF; RZ = 330 Ω
DUT: PESD5V0L7BAS
PESD5V0L7BS
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 10 V/div
horizontal scale = 50 ns/div
GND
GND
unclamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
clamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
GND
GND
vertical scale = 10 V/div
horizontal scale = 50 ns/div
vertical scale = 200 V/div
horizontal scale = 50 ns/div
unclamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)
clamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)
006aaa062
Fig 7.
ESD clamping test setup and waveforms
PESD5V0L7BAS_BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 23 June 2010
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PESD5V0L7BAS; PESD5V0L7BS
NXP Semiconductors
Low capacitance 7-fold bidirectional ESD protection diode arrays
7. Application information
The PESD5V0L7BAS and the PESD5V0L7BS are designed for the protection of up to
seven bidirectional data lines from the damage caused by ElectroStatic Discharge (ESD)
and surge pulses. The PESD5V0L7BAS and the PESD5V0L7BS may be used on lines
where the signal polarities are above and below ground.
The PESD5V0L7BAS and the PESD5V0L7BS provide a surge capability of 35 W per line
for a 8/20 s waveform.
high-speed
data lines
PESD5V0L7BAS
PESD5V0L7BS
GND
006aaa063
Fig 8.
Typical application for ESD protection of seven lines carrying bidirectional data
Circuit board layout and protection device placement:
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
PESD5V0L7BAS_BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 23 June 2010
© NXP B.V. 2010. All rights reserved.
7 of 15
PESD5V0L7BAS; PESD5V0L7BS
NXP Semiconductors
Low capacitance 7-fold bidirectional ESD protection diode arrays
8. Package outline
TSSOP8: plastic thin shrink small outline package; 8 leads; body width 3 mm
D
E
SOT505-1
A
X
c
y
HE
v M A
Z
5
8
A2
pin 1 index
(A3)
A1
A
θ
Lp
L
1
4
detail X
e
w M
bp
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D(1)
E(2)
e
HE
L
Lp
v
w
y
Z(1)
θ
mm
1.1
0.15
0.05
0.95
0.80
0.25
0.45
0.25
0.28
0.15
3.1
2.9
3.1
2.9
0.65
5.1
4.7
0.94
0.7
0.4
0.1
0.1
0.1
0.70
0.35
6°
0°
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
ISSUE DATE
99-04-09
03-02-18
SOT505-1
Fig 9.
EUROPEAN
PROJECTION
Package outline SOT505-1 (TSSOP8)
PESD5V0L7BAS_BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 23 June 2010
© NXP B.V. 2010. All rights reserved.
8 of 15
PESD5V0L7BAS; PESD5V0L7BS
NXP Semiconductors
Low capacitance 7-fold bidirectional ESD protection diode arrays
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
D
E
A
X
c
y
HE
v M A
Z
5
8
Q
A2
A
(A 3)
A1
pin 1 index
θ
Lp
1
L
4
e
detail X
w M
bp
0
2.5
5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (2)
e
HE
L
Lp
Q
v
w
y
Z (1)
mm
1.75
0.25
0.10
1.45
1.25
0.25
0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8
1.27
6.2
5.8
1.05
1.0
0.4
0.7
0.6
0.25
0.25
0.1
0.7
0.3
inches
0.069
0.010 0.057
0.004 0.049
0.01
0.019 0.0100
0.014 0.0075
0.20
0.19
0.16
0.15
0.05
0.01
0.01
0.004
0.028
0.012
0.244
0.039 0.028
0.041
0.228
0.016 0.024
θ
8o
o
0
Notes
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
SOT96-1
076E03
MS-012
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
99-12-27
03-02-18
Fig 10. Package outline SOT96-1 (SO8/MS-012)
PESD5V0L7BAS_BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 23 June 2010
© NXP B.V. 2010. All rights reserved.
9 of 15
PESD5V0L7BAS; PESD5V0L7BS
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Low capacitance 7-fold bidirectional ESD protection diode arrays
9. Packing information
Table 10. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
1000
2500
PESD5V0L7BAS SOT505-1
8 mm pitch, 12 mm tape and reel
-
-118
PESD5V0L7BS
8 mm pitch, 12 mm tape and reel
-115
-118
[1]
SOT96-1
For further information and the availability of packing methods, see Section 13.
10. Soldering
3.600
2.950
0.125
0.725
0.125
5.750
3.200
3.600
5.500
0.125
0.600
0.450
0.650
solder lands
occupied area
Dimensions in mm
sot505-1_fr
Reflow soldering is the only recommended soldering method.
Fig 11. Reflow soldering footprint SOT505-1 (TSSOP8)
PESD5V0L7BAS_BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 23 June 2010
© NXP B.V. 2010. All rights reserved.
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PESD5V0L7BAS; PESD5V0L7BS
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Low capacitance 7-fold bidirectional ESD protection diode arrays
5.50
0.60 (8×)
1.30
4.00
6.60
7.00
1.27 (6×)
solder lands
occupied area
placement accuracy ± 0.25
Dimensions in mm
sot096-1_fr
Fig 12. Reflow soldering footprint SOT96-1 (SO8/MS-012)
1.20 (2×)
0.60 (6×)
enlarged solder land
0.3 (2×)
1.30
4.00
6.60
7.00
1.27 (6×)
5.50
board direction
solder lands
occupied area
solder resist
placement accurracy ± 0.25
Dimensions in mm
sot096-1_fw
Fig 13. Wave soldering footprint SOT96-1 (SO8/MS-012)
PESD5V0L7BAS_BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 23 June 2010
© NXP B.V. 2010. All rights reserved.
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PESD5V0L7BAS; PESD5V0L7BS
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Low capacitance 7-fold bidirectional ESD protection diode arrays
11. Revision history
Table 11.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PESD5V0L7BAS_BS v.4
20100623
Product data sheet
-
PESD5V0L7BAS_BS_3
Modifications:
•
•
•
Section 4 “Marking”: marking code corrected for PESD5V0L7BAS
Section 10 “Soldering”: added
Section 12 “Legal information”: updated
PESD5V0L7BAS_BS_3
20090820
Product data sheet
-
PESD5V0L7BAS_BS_2
PESD5V0L7BAS_BS_2
20041125
Product data sheet
-
PESD5V0L7BS_1
PESD5V0L7BS_1
20040315
Product specification
-
-
PESD5V0L7BAS_BS
Product data sheet
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Rev. 4 — 23 June 2010
© NXP B.V. 2010. All rights reserved.
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12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
PESD5V0L7BAS_BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 23 June 2010
© NXP B.V. 2010. All rights reserved.
13 of 15
NXP Semiconductors
PESD5V0L7BAS; PESD5V0L7BS
Low capacitance 7-fold bidirectional ESD protection diode arrays
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PESD5V0L7BAS_BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 23 June 2010
© NXP B.V. 2010. All rights reserved.
14 of 15
NXP Semiconductors
PESD5V0L7BAS; PESD5V0L7BS
Low capacitance 7-fold bidirectional ESD protection diode arrays
14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Application information. . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Packing information . . . . . . . . . . . . . . . . . . . . 10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 23 June 2010
Document identifier: PESD5V0L7BAS_BS
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