Data Sheet

PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes
in SOT23
Rev. 02 — 25 August 2009
Product data sheet
1. Product profile
1.1 General description
Low capacitance double bidirectional ElectroStatic Discharge (ESD) protection diodes in a
SOT23 small Surface Mounted Device (SMD) plastic package designed to protect two
signal lines from the damage caused by ESD and other transients.
1.2 Features
n
n
n
n
ESD protection of two lines
Max. peak pulse power: PPP = 350 W
Low clamping voltage: VCL = 26 V
Small SMD plastic package
n
n
n
n
Ultra low leakage current: IRM < 90 nA
ESD protection up to 23 kV
IEC 61000-4-2, level 4 (ESD)
IEC 61000-4-5 (surge); IPP = 15 A
1.3 Applications
n Computers and peripherals
n Audio and video equipment
n Cellular handsets and accessories
n Communication systems
n Portable electronics
n Subscriber Identity Module (SIM) card
protection
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
VRWM
reverse standoff voltage
Cd
Min
Typ
Max
Unit
PESD3V3L2BT
-
-
3.3
V
PESD5V0L2BT
-
-
5.0
V
PESD12VL2BT
-
-
12
V
PESD15VL2BT
-
-
15
V
PESD24VL2BT
-
-
24
V
PESD3V3L2BT
-
101
-
pF
PESD5V0L2BT
-
75
-
pF
PESD12VL2BT
-
19
-
pF
PESD15VL2BT
-
16
-
pF
PESD24VL2BT
-
11
-
pF
diode capacitance
Conditions
VR = 0 V;
f = 1 MHz
PESDxL2BT series
NXP Semiconductors
Low capacitance double bidirectional ESD protection diodes in SOT23
2. Pinning information
Table 2.
Pinning
Pin
Description
1
cathode 1
2
cathode 2
3
double cathode
Simplified outline
Symbol
3
1
3
1
2
2
006aaa155
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PESD3V3L2BT
-
plastic surface mounted package; 3 leads
SOT23
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT
4. Marking
Table 4.
Marking codes
Type number
Marking code[1]
PESD3V3L2BT
V3*
PESD5V0L2BT
V4*
PESD12VL2BT
V5*
PESD15VL2BT
V6*
PESD24VL2BT
V7*
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PESDXL2BT_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 25 August 2009
2 of 14
PESDxL2BT series
NXP Semiconductors
Low capacitance double bidirectional ESD protection diodes in SOT23
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Min
Max
Unit
PESD3V3L2BT
-
350
W
PESD5V0L2BT
-
350
W
PESD12VL2BT
-
200
W
PESD15VL2BT
-
200
W
-
200
W
PESD3V3L2BT
-
15
A
PESD5V0L2BT
-
13
A
PESD12VL2BT
-
5
A
PESD15VL2BT
-
5
A
PESD24VL2BT
-
3
A
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
PPP
Parameter
Conditions
peak pulse power
tp = 8/20 µs
[1][2]
PESD24VL2BT
peak pulse current
IPP
tp = 8/20 µs
[1][2]
[1]
Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2]
Measured from pin 1 to 3 or 2 to 3.
Table 6.
Symbol
VESD
ESD maximum ratings
Parameter
electrostatic discharge
voltage
Conditions
IEC 61000-4-2
(contact discharge)
Min
Max
Unit
-
30
kV
-
23
kV
-
10
kV
[1][2]
PESD3V3L2BT
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT
PESDxL2BT series
HBM MIL-STD883
[1]
Device stressed with ten non-repetitive ESD pulses.
[2]
Measured from pin 1 to 3 or 2 to 3.
Table 7.
ESD standards compliance
ESD Standard
Conditions
IEC 61000-4-2, level 4 (ESD)
> 15 kV (air); > 8 kV (contact)
HBM MIL-STD883, class 3
> 4 kV
PESDXL2BT_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 25 August 2009
3 of 14
PESDxL2BT series
NXP Semiconductors
Low capacitance double bidirectional ESD protection diodes in SOT23
001aaa631
IPP
001aaa630
120
100 %
90 %
100 % IPP; 8 µs
IPP
(%)
80
e−t
50 % IPP; 20 µs
40
10 %
0
10
20
30
30 ns
40
t (µs)
Fig 1.
t
tr = 0.7 ns to 1 ns
0
60 ns
8/20 µs pulse waveform according to
IEC 61000-4-5
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
PESDXL2BT_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 25 August 2009
4 of 14
PESDxL2BT series
NXP Semiconductors
Low capacitance double bidirectional ESD protection diodes in SOT23
6. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
VRWM
reverse standoff voltage
IRM
VBR
Conditions
Min
Typ
Max
Unit
PESD3V3L2BT
-
-
3.3
V
PESD5V0L2BT
-
-
5.0
V
PESD12VL2BT
-
-
12
V
PESD15VL2BT
-
-
15
V
PESD24VL2BT
-
-
24
V
reverse leakage current
PESD3V3L2BT
VRWM = 3.3 V
-
0.09
2
µA
PESD5V0L2BT
VRWM = 5.0 V
-
0.01
1
µA
PESD12VL2BT
VRWM = 12 V
-
<1
50
nA
PESD15VL2BT
VRWM = 15 V
-
<1
50
nA
PESD24VL2BT
VRWM = 24 V
-
<1
50
nA
PESD3V3L2BT
5.8
6.4
6.9
V
PESD5V0L2BT
7.0
7.6
8.2
V
PESD12VL2BT
14.2
15.8
16.7
V
PESD15VL2BT
17.1
18.8
20.3
V
25.4
27.8
30.3
V
PESD3V3L2BT
-
101
-
pF
PESD5V0L2BT
-
75
-
pF
PESD12VL2BT
-
19
-
pF
PESD15VL2BT
-
16
-
pF
-
11
-
pF
IPP = 1 A
-
-
8
V
IPP = 15 A
-
-
26
V
IPP = 1 A
-
-
10
V
breakdown voltage
IR = 5 mA
PESD24VL2BT
Cd
diode capacitance
VR = 0 V;
f = 1 MHz
PESD24VL2BT
VCL
[1][2]
clamping voltage
PESD3V3L2BT
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT
IPP = 13 A
-
-
28
V
IPP = 1 A
-
-
20
V
IPP = 5 A
-
-
37
V
IPP = 1 A
-
-
25
V
IPP = 5 A
-
-
44
V
IPP = 1 A
-
-
40
V
IPP = 3 A
-
-
70
V
PESDXL2BT_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 25 August 2009
5 of 14
PESDxL2BT series
NXP Semiconductors
Low capacitance double bidirectional ESD protection diodes in SOT23
Table 8.
Characteristics …continued
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
rdif
differential resistance
IR = 1 mA
PESD3V3L2BT
-
-
400
Ω
PESD5V0L2BT
-
-
80
Ω
PESD12VL2BT
-
-
200
Ω
PESD15VL2BT
-
-
225
Ω
PESD24VL2BT
-
-
300
Ω
[1]
Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2]
Measured from pin 1 to 3 or 2 to 3.
PESDXL2BT_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 25 August 2009
6 of 14
PESDxL2BT series
NXP Semiconductors
Low capacitance double bidirectional ESD protection diodes in SOT23
006aaa531
104
001aaa193
1.2
PPP
PPP
(W)
PPP(25°C)
103
0.8
(1)
(2)
102
0.4
10
1
102
10
103
0
104
0
50
100
150
tp (µs)
200
Tj (°C)
Tamb = 25 °C
(1) PESD3V3L2BT and PESD5V0L2BT
(2) PESD12VL2BT, PESD15VL2BT, PESD24VL2BT
Fig 3.
Peak pulse power as a function of exponential
pulse duration tp; typical values
Fig 4.
006aaa067
110
Cd
(pF)
100
Relative variation of peak pulse power as a
function of junction temperature; typical
values
006aaa068
20
Cd
(pF)
16
90
(1)
12
(1)
80
(2)
8
70
(3)
(2)
60
4
0
50
0
1
2
3
4
5
0
5
10
15
20
25
VR (V)
VR (V)
Tamb = 25 °C; f = 1 MHz
Tamb = 25 °C; f = 1 MHz
(1) PESD3V3L2BT
(1) PESD12VL2BT
(2) PESD5V0L2BT
(2) PESD15VL2BT
(3) PESD24VL2BT
Fig 5.
Diode capacitance as a function of reverse
voltage; typical values
Fig 6.
Diode capacitance as a function of reverse
voltage; typical values
PESDXL2BT_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 25 August 2009
7 of 14
PESDxL2BT series
NXP Semiconductors
Low capacitance double bidirectional ESD protection diodes in SOT23
006aaa069
10
IPP
(1)
IRM
IRM(25°C)
−VCL −VBR −VRWM
1
IR
IRM
−IRM
−IR
VRWM VBR VCL
−
10−1
−100
−50
0
50
100
+
−IPP
150
Tj (°C)
006aaa676
(1) PESD3V3L2BT, PESD5V0L2BT
PESD12VL2BT, PESD15VL2BT and PESD24VL2BT:
IRM < 20 nA; Tj = 150 °C
Fig 7.
Relative variation of reverse leakage current
as a function of junction temperature; typical
values
Fig 8.
V-I characteristics for a bidirectional ESD
protection diode
PESDXL2BT_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 25 August 2009
8 of 14
PESDxL2BT series
NXP Semiconductors
Low capacitance double bidirectional ESD protection diodes in SOT23
ESD TESTER
RZ
450 Ω
4 GHz DIGITAL
OSCILLOSCOPE
RG 223/U
50 Ω coax
10×
ATTENUATOR
50 Ω
CZ
IEC 61000-4-2 network
CZ = 150 pF; RZ = 330 Ω
D.U.T.
(Device
Under
Test)
vertical scale = 20 V/div; horizontal scale = 50 ns/div
vertical scale = 200 V/div
horizontal scale = 50 ns/div
PESD24VL2BT
GND
PESD15VL2BT
GND
PESD12VL2BT
GND
PESD5V0L2BT
GND
GND
PESD3V3L2BT
GND
unclamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
clamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
vertical scale = 20 V/div; horizontal scale = 50 ns/div
GND
GND
PESD3V3L2BT
GND
PESD5V0L2BT
GND
PESD12VL2BT
GND
PESD15VL2BT
GND
PESD24VL2BT
vertical scale = 200 V/div
horizontal scale = 50 ns/div
unclamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)
Fig 9.
clamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)
006aaa162
ESD clamping test setup and waveforms
PESDXL2BT_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 25 August 2009
9 of 14
PESDxL2BT series
NXP Semiconductors
Low capacitance double bidirectional ESD protection diodes in SOT23
7. Application information
The PESDxL2BT series is designed for the protection of two bidirectional signal lines from
the damage caused by ESD and surge pulses. The PESDxL2BT series may be used on
lines where the signal polarities are above and below ground. The PESDxL2BT series
provides a surge capability of up to 350 W per line for an 8/20 µs waveform.
line 1 to be protected
line 2 to be protected
PESDxL2BT
GND
006aaa163
Fig 10. Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the PESDxL2BT as close to the input terminal or connector as possible.
2. The path length between the PESDxL2BT and the protected line should be
minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
PESDXL2BT_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 25 August 2009
10 of 14
PESDxL2BT series
NXP Semiconductors
Low capacitance double bidirectional ESD protection diodes in SOT23
8. Package outline
3.0
2.8
1.1
0.9
3
0.45
0.15
2.5 1.4
2.1 1.2
1
2
1.9
0.48
0.38
Dimensions in mm
0.15
0.09
04-11-04
Fig 11. Package outline SOT23 (TO-236AB)
9. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
PESD3V3L2BT
Package
SOT23
Description
4 mm pitch, 8 mm tape and reel
Packing quantity
3000
10000
-215
-235
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT
[1]
For further information and the availability of packing methods, see Section 12.
PESDXL2BT_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 25 August 2009
11 of 14
PESDxL2BT series
NXP Semiconductors
Low capacitance double bidirectional ESD protection diodes in SOT23
10. Revision history
Table 10.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PESDXL2BT_SER_2
20090825
Product data sheet
-
PESDXL2BT_SER_1
Modifications:
PESDXL2BT_SER_1
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
•
Table 2 “Pinning”: amended
20051101
Product data sheet
PESDXL2BT_SER_2
Product data sheet
-
-
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 25 August 2009
12 of 14
PESDxL2BT series
NXP Semiconductors
Low capacitance double bidirectional ESD protection diodes in SOT23
11. Legal information
11.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PESDXL2BT_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 25 August 2009
13 of 14
PESDxL2BT series
NXP Semiconductors
Low capacitance double bidirectional ESD protection diodes in SOT23
13. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
11.1
11.2
11.3
11.4
12
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Application information. . . . . . . . . . . . . . . . . . 10
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Packing information. . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 25 August 2009
Document identifier: PESDXL2BT_SER_2
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