Data Sheet

MMBZxAL series
Low capacitance unidirectional double ESD protection diodes
Rev. 02 — 10 December 2009
Product data sheet
1. Product profile
1.1 General description
Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a common
anode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted
Device (SMD) plastic package. The devices are designed for ESD and transient
overvoltage protection of up to two signal lines.
Table 1.
Product overview
Type number
MMBZ5V6AL
Package
Configuration
NXP
JEDEC
SOT23
TO-236AB
dual common anode
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
1.2 Features
„ Unidirectional ESD protection of
two lines
„ Bidirectional ESD protection of one line
„ Low diode capacitance: Cd ≤ 280 pF
„ Rated peak pulse power: PPPM = 40 W
„ Ultra low leakage current: IRM = 5 nA
„ ESD protection up to 30 kV (contact
discharge)
„ IEC 61000-4-2; level 4 (ESD)
„ IEC 61643-321
„ AEC-Q101 qualified
1.3 Applications
„ Computers and peripherals
„ Audio and video equipment
„ Cellular handsets and accessories
„ Automotive electronic control units
„ Portable electronics
MMBZxAL series
NXP Semiconductors
Low capacitance unidirectional double ESD protection diodes
1.4 Quick reference data
Table 2.
Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
MMBZ5V6AL
-
-
3
V
MMBZ6V2AL
-
-
3
V
MMBZ6V8AL
-
-
4.5
V
Per diode
VRWM
Cd
reverse standoff voltage
MMBZ9V1AL
-
-
6
V
MMBZ10VAL
-
-
6.5
V
MMBZ12VAL
-
-
8.5
V
MMBZ15VAL
-
-
12
V
MMBZ18VAL
-
-
14.5
V
MMBZ20VAL
-
-
17
V
MMBZ27VAL
-
-
22
V
MMBZ33VAL
-
-
26
V
MMBZ5V6AL
-
210
280
pF
MMBZ6V2AL
-
175
230
pF
MMBZ6V8AL
-
150
200
pF
diode capacitance
f = 1 MHz; VR = 0 V
MMBZ9V1AL
-
155
200
pF
MMBZ10VAL
-
130
170
pF
MMBZ12VAL
-
110
140
pF
MMBZ15VAL
-
85
105
pF
MMBZ18VAL
-
70
90
pF
MMBZ20VAL
-
65
80
pF
MMBZ27VAL
-
48
60
pF
MMBZ33VAL
-
45
55
pF
2. Pinning information
Table 3.
Pinning
Pin
Description
1
cathode (diode 1)
2
cathode (diode 2)
3
common anode
Simplified outline
Graphic symbol
3
1
3
2
1
2
006aaa154
MMBZXAL_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 10 December 2009
2 of 17
MMBZxAL series
NXP Semiconductors
Low capacitance unidirectional double ESD protection diodes
3. Ordering information
Table 4.
Ordering information
Type number
MMBZ5V6AL
Package
Name
Description
Version
-
plastic surface-mounted package; 3 leads
SOT23
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
4. Marking
Table 5.
Marking codes
Type number
Marking code[1]
MMBZ5V6AL
RR*
MMBZ6V2AL
RS*
MMBZ6V8AL
RT*
MMBZ9V1AL
RU*
MMBZ10VAL
RV*
MMBZ12VAL
*H1
MMBZ15VAL
*H2
MMBZ18VAL
*H3
MMBZ20VAL
*H4
MMBZ27VAL
*H5
MMBZ33VAL
*H6
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
MMBZXAL_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 10 December 2009
3 of 17
MMBZxAL series
NXP Semiconductors
Low capacitance unidirectional double ESD protection diodes
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
rated peak pulse power
tp = 10/1000 μs
-
24
W
-
40
W
MMBZ5V6AL
-
3
A
MMBZ6V2AL
-
2.76
A
MMBZ6V8AL
-
2.5
A
MMBZ9V1AL
-
1.7
A
MMBZ10VAL
-
1.7
A
MMBZ12VAL
-
2.35
A
MMBZ15VAL
-
1.9
A
MMBZ18VAL
-
1.6
A
MMBZ20VAL
-
1.4
A
MMBZ27VAL
-
1
A
MMBZ33VAL
-
0.87
A
Per diode
PPPM
[1][2]
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
IPPM
rated peak pulse current
tp = 10/1000 μs
[1][2]
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C
MMBZxAL series
[3]
-
265
mW
MMBZ5V6AL
[4]
-
290
mW
[4]
-
360
mW
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
MMBZXAL_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 10 December 2009
4 of 17
MMBZxAL series
NXP Semiconductors
Low capacitance unidirectional double ESD protection diodes
Table 6.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Tj
Conditions
Min
Max
Unit
junction temperature
-
150
°C
Tamb
ambient temperature
−55
+150
°C
Tstg
storage temperature
−65
+150
°C
[1]
In accordance with IEC 61643-321 (10/1000 μs current waveform).
[2]
Measured from pin 1 or 2 to pin 3.
[3]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and
standard footprint.
[4]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
Table 7.
ESD maximum ratings
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
electrostatic discharge
voltage
IEC 61000-4-2
(contact discharge)
Min
Max
Unit
[1][2]
-
30
kV
[2]
-
2
kV
Per diode
VESD
machine model
[1]
Device stressed with ten non-repetitive ESD pulses.
[2]
Measured from pin 1 or 2 to pin 3.
Table 8.
ESD standards compliance
Standard
Conditions
Per diode
IEC 61000-4-2; level 4 (ESD)
> 15 kV (air); > 8 kV (contact)
MIL-STD-883; class 3 (human body model)
> 8 kV
MMBZXAL_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 10 December 2009
5 of 17
MMBZxAL series
NXP Semiconductors
Low capacitance unidirectional double ESD protection diodes
001aaa631
IPP
006aab319
150
100 %
90 %
IPP
(%)
100 % IPP; 10 μs
100
50 % IPP; 1000 μs
50
10 %
0
1.0
2.0
3.0
30 ns
4.0
tp (ms)
Fig 1.
t
tr = 0.7 ns to 1 ns
0
10/1000 μs pulse waveform according to
IEC 61643-321
60 ns
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
MMBZXAL_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 10 December 2009
6 of 17
MMBZxAL series
NXP Semiconductors
Low capacitance unidirectional double ESD protection diodes
6. Thermal characteristics
Table 9.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per device
Rth(j-a)
thermal resistance from junction in free air
to ambient
MMBZxAL series
[1]
-
-
460
K/W
MMBZ5V6AL
[2]
-
-
420
K/W
[2]
-
-
340
K/W
-
-
150
K/W
-
-
50
K/W
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
Rth(j-sp)
thermal resistance from junction
to solder point
MMBZ5V6AL
[3]
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[3]
Measured from pin 1 or 2 to pin 3.
MMBZXAL_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 10 December 2009
7 of 17
MMBZxAL series
NXP Semiconductors
Low capacitance unidirectional double ESD protection diodes
7. Characteristics
Table 10. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VF
forward voltage
IF = 10 mA
-
-
0.9
V
VRWM
reverse standoff voltage
MMBZ5V6AL
-
-
3
V
MMBZ6V2AL
-
-
3
V
Per diode
IRM
VBR
MMBZ6V8AL
-
-
4.5
V
MMBZ9V1AL
-
-
6
V
MMBZ10VAL
-
-
6.5
V
MMBZ12VAL
-
-
8.5
V
MMBZ15VAL
-
-
12
V
MMBZ18VAL
-
-
14.5
V
MMBZ20VAL
-
-
17
V
MMBZ27VAL
-
-
22
V
MMBZ33VAL
-
-
26
V
reverse leakage current
MMBZ5V6AL
VRWM = 3 V
-
0.24
5
μA
MMBZ6V2AL
VRWM = 3 V
-
5
200
nA
MMBZ6V8AL
VRWM = 4.5 V
-
10
300
nA
MMBZ9V1AL
VRWM = 6 V
-
5
100
nA
MMBZ10VAL
VRWM = 6.5 V
-
1
20
nA
MMBZ12VAL
VRWM = 8.5 V
-
0.1
5
nA
MMBZ15VAL
VRWM = 12 V
-
0.1
5
nA
MMBZ18VAL
VRWM = 14.5 V
-
0.1
5
nA
MMBZ20VAL
VRWM = 17 V
-
0.1
5
nA
MMBZ27VAL
VRWM = 22 V
-
0.1
5
nA
MMBZ33VAL
VRWM = 26 V
-
0.1
5
nA
MMBZ5V6AL
IR = 20 mA
5.32
5.6
5.88
V
MMBZ6V2AL
IR = 1 mA
5.89
6.2
6.51
V
MMBZ6V8AL
IR = 1 mA
6.46
6.8
7.14
V
MMBZ9V1AL
IR = 1 mA
8.65
9.1
9.56
V
MMBZ10VAL
IR = 1 mA
9.5
10
10.5
V
MMBZ12VAL
IR = 1 mA
11.4
12
12.6
V
MMBZ15VAL
IR = 1 mA
14.25 15
15.75 V
MMBZ18VAL
IR = 1 mA
17.1
18
18.9
V
MMBZ20VAL
IR = 1 mA
19
20
21
V
MMBZ27VAL
IR = 1 mA
25.65 27
28.35 V
MMBZ33VAL
IR = 1 mA
31.35 33
34.65 V
breakdown voltage
MMBZXAL_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 10 December 2009
8 of 17
MMBZxAL series
NXP Semiconductors
Low capacitance unidirectional double ESD protection diodes
Table 10. Characteristics …continued
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Cd
diode capacitance
f = 1 MHz; VR = 0 V
VCL
SZ
Min
Typ
Max
Unit
MMBZ5V6AL
-
210
280
pF
MMBZ6V2AL
-
175
230
pF
MMBZ6V8AL
-
150
200
pF
MMBZ9V1AL
-
155
200
pF
MMBZ10VAL
-
130
170
pF
MMBZ12VAL
-
110
140
pF
MMBZ15VAL
-
85
105
pF
MMBZ18VAL
-
70
90
pF
MMBZ20VAL
-
65
80
pF
MMBZ27VAL
-
48
60
pF
MMBZ33VAL
-
45
55
pF
-
-
8
V
[1][2]
clamping voltage
MMBZ5V6AL
IPPM = 3 A
MMBZ6V2AL
IPPM = 2.76 A
-
-
8.7
V
MMBZ6V8AL
IPPM = 2.5 A
-
-
9.6
V
MMBZ9V1AL
IPPM = 1.7 A
-
-
14
V
MMBZ10VAL
IPPM = 1.7 A
-
-
14.2
V
MMBZ12VAL
IPPM = 2.35 A
-
-
17
V
MMBZ15VAL
IPPM = 1.9 A
-
-
21
V
MMBZ18VAL
IPPM = 1.6 A
-
-
25
V
MMBZ20VAL
IPPM = 1.4 A
-
-
28
V
MMBZ27VAL
IPPM = 1 A
-
-
40
V
MMBZ33VAL
IPPM = 0.87 A
-
-
46
V
MMBZ5V6AL
IZ = 20 mA
-
1.7
-
mV/K
MMBZ6V2AL
IZ = 1 mA
-
2.1
-
mV/K
MMBZ6V8AL
IZ = 1 mA
-
3.2
-
mV/K
MMBZ9V1AL
IZ = 1 mA
-
5.4
-
mV/K
MMBZ10VAL
IZ = 1 mA
-
6.5
-
mV/K
MMBZ12VAL
IZ = 1 mA
-
8.2
-
mV/K
MMBZ15VAL
IZ = 1 mA
-
11
-
mV/K
MMBZ18VAL
IZ = 1 mA
-
14
-
mV/K
MMBZ20VAL
IZ = 1 mA
-
15.8
-
mV/K
MMBZ27VAL
IZ = 1 mA
-
23
-
mV/K
MMBZ33VAL
IZ = 1 mA
-
29.8
-
mV/K
temperature coefficient
[1]
In accordance with IEC 61643-321(10/1000 μs current waveform).
[2]
Measured from pin 1 or 2 to pin 3.
MMBZXAL_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 10 December 2009
9 of 17
MMBZxAL series
NXP Semiconductors
Low capacitance unidirectional double ESD protection diodes
006aab320
103
006aab321
1.2
PPPM
PPPM
(W)
PPPM(25°C)
102
0.8
10
0.4
1
10−2
10−1
1
102
10
0
103
tp (ms)
0
50
100
150
200
Tj (°C)
Tamb = 25 °C
unidirectional and bidirectional
Fig 3.
Rated peak pulse power as a function of
exponential pulse duration (rectangular
waveform); typical values
006aab839
250
Cd
(pF)
Fig 4.
Relative variation of rated peak pulse power as
a function of junction temperature; typical
values
006aab840
150
Cd
(pF)
200
100
(1)
150
(3)
(1)
(4)
(2)
50
(5)
(2)
100
(6)
(3)
(2)
(3)
(4)
50
0
0
2
4
6
0
5
VR (V)
10
15
VR (V)
f = 1 MHz; Tamb = 25 °C
f = 1 MHz; Tamb = 25 °C
(1) MMBZ5V6AL: unidirectional
(1) MMBZ10VAL: unidirectional
(2) MMBZ5V6AL: bidirectional
(2) MMBZ10VAL: bidirectional
(3) MMBZ6V8AL: unidirectional
(3) MMBZ15VAL: unidirectional
(4) MMBZ6V8AL: bidirectional
(4) MMBZ15VAL: bidirectional
(5) MMBZ27VAL: unidirectional
(6) MMBZ27VAL: bidirectional
Fig 5.
Diode capacitance as a function of reverse
voltage; typical values
Fig 6.
Diode capacitance as a function of reverse
voltage; typical values
MMBZXAL_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 10 December 2009
10 of 17
MMBZxAL series
NXP Semiconductors
Low capacitance unidirectional double ESD protection diodes
IRM
(nA)
006aab841
103
(1)
102
10
(2)
1
(3)
10−1
10−2
(4)
10−3
10−4
−75
−25
25
75
125
175
Tamb (°C)
(1) MMBZ5V6AL: VRWM = 3 V
(2) MMBZ6V8AL: VRWM = 4.5 V
(3) MMBZ9V1AL: VRWM = 6 V
(4) MMBZ27VAL: VRWM = 22 V
Fig 7.
Reverse leakage current as a function of ambient temperature; typical values
I
IPPM
IPP
−VCL −VBR −VRWM
V
−IRM
−IR
−
−VCL −VBR −VRWM
IR
IRM
−IRM
−IR
+
P-N
−
−IPP
−IPPM
Fig 8.
+
−IPP
−IPPM
006aab324
V-I characteristics for a unidirectional
ESD protection diode
Fig 9.
006aab325
V-I characteristics for a bidirectional
ESD protection diode
MMBZXAL_SER_2
Product data sheet
VRWM VBR VCL
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 10 December 2009
11 of 17
MMBZxAL series
NXP Semiconductors
Low capacitance unidirectional double ESD protection diodes
8. Application information
The MMBZxAL series is designed for the protection of up to two unidirectional data or
signal lines from the damage caused by ESD and surge pulses. The devices may be used
on lines where the signal polarities are either positive or negative with respect to ground.
The MMBZ5V6AL, MMBZ6V2AL, MMBZ6V8AL, MMBZ9V1AL and MMBZ10VAL provide
a surge capability of 24 W per line, the MMBZ12VAL, MMBZ15VAL, MMBZ18VAL,
MMBZ20VAL, MMBZ27VAL and MMBZ33VAL provide a surge capability of 40 W per line,
for a 10/1000 μs waveform.
line 1 to be protected
line 1 to be protected
line 2 to be protected
MMBZxAL
GND
unidirectional protection
of two lines
MMBZxAL
GND
bidirectional protection
of one line
006aab842
Fig 10. Typical application: ESD and transient voltage protection of data lines
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the MMBZxAL series as close to the input terminal or connector as possible.
2. The path length between the MMBZxAL series and the protected line should be
minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all PCB conductive loops including power and ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
9. Test information
9.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
MMBZXAL_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 10 December 2009
12 of 17
MMBZxAL series
NXP Semiconductors
Low capacitance unidirectional double ESD protection diodes
10. Package outline
3.0
2.8
1.1
0.9
3
0.45
0.15
2.5 1.4
2.1 1.2
1
2
1.9
0.48
0.38
Dimensions in mm
0.15
0.09
04-11-04
Fig 11. Package outline SOT23 (TO-236AB)
11. Packing information
Table 11. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
MMBZ5V6AL
Package
SOT23
Description
4 mm pitch, 8 mm tape and reel
Packing quantity
3000
10000
-215
-235
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
[1]
For further information and the availability of packing methods, see Section 15.
MMBZXAL_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 10 December 2009
13 of 17
MMBZxAL series
NXP Semiconductors
Low capacitance unidirectional double ESD protection diodes
12. Soldering
3.3
2.9
1.9
solder lands
solder resist
3
2
1.7
solder paste
0.6
(3×)
0.7
(3×)
occupied area
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
Fig 12. Reflow soldering footprint SOT23 (TO-236AB)
2.2
1.2
(2×)
1.4
(2×)
solder lands
4.6
solder resist
2.6
occupied area
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig 13. Wave soldering footprint SOT23 (TO-236AB)
MMBZXAL_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 10 December 2009
14 of 17
MMBZxAL series
NXP Semiconductors
Low capacitance unidirectional double ESD protection diodes
13. Revision history
Table 12.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
MMBZXAL_SER_2
20091210
Product data sheet
-
MMBZXVAL_SER_1
Modifications:
MMBZXVAL_SER_1
•
Type numbers MMBZ5V6AL, MMBZ6V2AL, MMBZ6V8AL, MMBZ9V1AL and
MMBZ10VAL added
•
Type numbers MMBZ12VAL/DG, MMBZ15VAL/DG, MMBZ18VAL/DG, MMBZ20VAL/DG,
MMBZ27VAL/DG, MMBZ33VAL/DG removed
•
•
•
•
Figure 5 and 7: updated
Figure 6: added
Figure 10: updated
Section 14 “Legal information”: updated
20080901
Product data sheet
MMBZXAL_SER_2
Product data sheet
-
-
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 10 December 2009
15 of 17
MMBZxAL series
NXP Semiconductors
Low capacitance unidirectional double ESD protection diodes
14. Legal information
14.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
14.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
14.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
14.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
15. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
MMBZXAL_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 10 December 2009
16 of 17
MMBZxAL series
NXP Semiconductors
Low capacitance unidirectional double ESD protection diodes
16. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
10
11
12
13
14
14.1
14.2
14.3
14.4
15
16
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 3
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . 7
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Application information. . . . . . . . . . . . . . . . . . 12
Test information . . . . . . . . . . . . . . . . . . . . . . . . 12
Quality information . . . . . . . . . . . . . . . . . . . . . 12
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13
Packing information . . . . . . . . . . . . . . . . . . . . 13
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 15
Legal information. . . . . . . . . . . . . . . . . . . . . . . 16
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Contact information. . . . . . . . . . . . . . . . . . . . . 16
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 10 December 2009
Document identifier: MMBZXAL_SER_2
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