Data Sheet

PESDxL5UF; PESDxL5UV;
PESDxL5UY
Low capacitance unidirectional fivefold ESD protection diode
arrays
Rev. 02 — 8 January 2008
Product data sheet
1. Product profile
1.1 General description
Low capacitance unidirectional fivefold ElectroStatic Discharge (ESD) protection diode
arrays in small Surface-Mounted Device (SMD) plastic packages designed to protect up to
five unidirectional signal lines from the damage caused by ESD and other transients.
Table 1.
Product overview
Type number
Package
Package configuration
NXP
JEITA
JEDEC
PESD3V3L5UF
SOT886
-
MO-252
leadless ultra small
PESD5V0L5UF
SOT886
-
MO-252
leadless ultra small
PESD3V3L5UV
SOT666
-
-
ultra small and flat lead
PESD5V0L5UV
SOT666
-
-
ultra small and flat lead
PESD3V3L5UY
SOT363
SC-88
-
very small
PESD5V0L5UY
SOT363
SC-88
-
very small
1.2 Features
n
n
n
n
ESD protection of up to five lines
Low diode capacitance
Max. peak pulse power: PPP = 25 W
Low clamping voltage: VCL = 12 V
n
n
n
n
Ultra low leakage current: IRM = 5 nA
ESD protection up to 20 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); IPP = 2.5 A
1.3 Applications
n Computers and peripherals
n Audio and video equipment
n Cellular handsets and accessories
n Communication systems
n Portable electronics
n Subscriber Identity Module (SIM) card
protection
PESDxL5UF/V/Y
NXP Semiconductors
Low capacitance unidirectional fivefold ESD protection diode arrays
1.4 Quick reference data
Table 2.
Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY
-
-
3.3
V
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY
-
-
5.0
V
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY
-
22
28
pF
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY
-
16
19
pF
Per diode
VRWM
Cd
reverse standoff voltage
diode capacitance
f = 1 MHz; VR = 0 V
2. Pinning information
Table 3.
Pinning
Pin
Description
Simplified outline
Symbol
PESD3V3L5UF; PESD5V0L5UF
1
cathode (diode 1)
2
common anode
3
1
2
3
1
6
cathode (diode 2)
2
5
4
cathode (diode 3)
3
4
5
cathode (diode 4)
6
cathode (diode 5)
6
5
bottom view
006aaa159
4
PESD3V3L5UV; PESD5V0L5UV
1
cathode (diode 1)
2
common anode
3
4
5
cathode (diode 4)
6
cathode (diode 5)
5
4
1
6
cathode (diode 2)
2
5
cathode (diode 3)
3
4
PESDXL5UF_V_Y_2
Product data sheet
6
1
2
3
006aaa159
© NXP B.V. 2008. All rights reserved.
Rev. 02 — 8 January 2008
2 of 17
PESDxL5UF/V/Y
NXP Semiconductors
Low capacitance unidirectional fivefold ESD protection diode arrays
Table 3.
Pinning …continued
Pin
Description
Simplified outline
Symbol
PESD3V3L5UY; PESD5V0L5UY
1
cathode (diode 1)
2
common anode
3
cathode (diode 2)
4
cathode (diode 3)
5
cathode (diode 4)
6
cathode (diode 5)
6
1
5
2
4
1
6
2
5
3
4
3
006aaa159
3. Ordering information
Table 4.
Ordering information
Type number
PESD3V3L5UF
Package
Name
Description
Version
XSON6
plastic extremely thin small outline package;
no leads; 6 terminals; body 1 × 1.45 × 0.5 mm
SOT886
-
plastic surface-mounted package; 6 leads
SOT666
SC-88
plastic surface-mounted package; 6 leads
SOT363
PESD5V0L5UF
PESD3V3L5UV
PESD5V0L5UV
PESD3V3L5UY
PESD5V0L5UY
4. Marking
Table 5.
Marking codes
Type number
Marking code[1]
PESD3V3L5UF
A1
PESD5V0L5UF
A2
PESD3V3L5UV
E1
PESD5V0L5UV
E2
PESD3V3L5UY
K3*
PESD5V0L5UY
K4*
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PESDXL5UF_V_Y_2
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 02 — 8 January 2008
3 of 17
PESDxL5UF/V/Y
NXP Semiconductors
Low capacitance unidirectional fivefold ESD protection diode arrays
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
PPP
peak pulse power
tp = 8/20 µs
IPP
peak pulse current
tp = 8/20 µs
Min
Max
Unit
[1][2]
-
25
W
[1][2]
-
2.5
A
Per diode
Per device
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
[1]
Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2]
Measured from pin 1, 3, 4, 5 or 6 to pin 2.
Table 7.
ESD maximum ratings
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
electrostatic discharge voltage
IEC 61000-4-2
(contact discharge)
Min
Max
Unit
-
20
kV
-
10
kV
Per diode
VESD
MIL-STD-883 (human
body model)
[1]
Device stressed with ten non-repetitive ESD pulses.
[2]
Measured from pin 1, 3, 4, 5 or 6 to pin 2.
Table 8.
[1][2]
ESD standards compliance
Standard
Conditions
Per diode
IEC 61000-4-2; level 4 (ESD)
> 15 kV (air); > 8 kV (contact)
MIL-STD-883; class 3 (human body model)
> 4 kV
PESDXL5UF_V_Y_2
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 02 — 8 January 2008
4 of 17
PESDxL5UF/V/Y
NXP Semiconductors
Low capacitance unidirectional fivefold ESD protection diode arrays
001aaa631
IPP
001aaa630
120
100 %
90 %
100 % IPP; 8 µs
IPP
(%)
80
e−t
50 % IPP; 20 µs
40
10 %
t
tr = 0.7 ns to 1 ns
0
0
10
20
30
30 ns
40
t (µs)
60 ns
Fig 1. 8/20 µs pulse waveform according to
IEC 61000-4-5
Fig 2. ESD pulse waveform according to
IEC 61000-4-2
6. Characteristics
Table 9.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY
-
-
3.3
V
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY
-
-
5.0
V
Per diode
VRWM
IRM
VBR
reverse standoff voltage
reverse leakage current
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY
VRWM = 3.3 V
-
75
300
nA
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY
VRWM = 5.0 V
-
5
25
nA
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY
5.3
5.6
5.9
V
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY
6.4
6.8
7.2
V
breakdown voltage
IR = 1 mA
PESDXL5UF_V_Y_2
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 02 — 8 January 2008
5 of 17
PESDxL5UF/V/Y
NXP Semiconductors
Low capacitance unidirectional fivefold ESD protection diode arrays
Table 9.
Characteristics …continued
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Cd
f = 1 MHz;
VR = 0 V
VCL
rdif
Min
Typ
Max
Unit
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY
-
22
28
pF
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY
-
16
19
pF
diode capacitance
[1][2]
clamping voltage
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY
IPP = 1 A
-
-
10
V
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY
IPP = 2.5 A
-
-
12
V
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY
IPP = 1 A
-
-
10
V
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY
IPP = 2.5 A
-
-
12
V
differential resistance
IR = 1 mA
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY
-
-
200
Ω
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY
-
-
100
Ω
[1]
Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2]
Measured from pin 1, 3, 4, 5 or 6 to pin 2.
PESDXL5UF_V_Y_2
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 02 — 8 January 2008
6 of 17
PESDxL5UF/V/Y
NXP Semiconductors
Low capacitance unidirectional fivefold ESD protection diode arrays
006aab139
102
006aab140
1.2
PPP
PPP(25°C)
1.0
PPP
(W)
0.8
0.6
10
0.4
0.2
1
1
102
10
103
104
0
0
50
100
tp (µs)
150
Tj (°C)
Tamb = 25 °C
Fig 3. Peak pulse power as a function of exponential
pulse duration; typical values
006aab141
25
Fig 4. Relative variation of peak pulse power as a
function of junction temperature; typical values
006aab142
10
Cd
(pF)
20
IR
IR(25°C)
15
(1)
1
(2)
10
5
0
0
1
2
3
4
5
10−1
−75
VR (V)
−25
25
75
125
175
Tj (°C)
f = 1 MHz; Tamb = 25 °C
(1) PESD3V3L5UF; PESD3V3L5UV; PESD3V3L5UY
(2) PESD5V0L5UF; PESD5V0L5UV; PESD5V0L5UY
Fig 5. Diode capacitance as a function of reverse
voltage; typical values
Fig 6. Relative variation of reverse current as a
function of junction temperature; typical values
PESDXL5UF_V_Y_2
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 02 — 8 January 2008
7 of 17
PESDxL5UF/V/Y
NXP Semiconductors
Low capacitance unidirectional fivefold ESD protection diode arrays
I
−VCL −VBR −VRWM
V
−IRM
−IR
−
+
P-N
−IPP
006aaa407
Fig 7. V-I characteristics for a unidirectional ESD protection diode
PESDXL5UF_V_Y_2
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 02 — 8 January 2008
8 of 17
PESDxL5UF/V/Y
NXP Semiconductors
Low capacitance unidirectional fivefold ESD protection diode arrays
ESD TESTER
RZ
450 Ω
RG 223/U
50 Ω coax
4 GHz DIGITAL
OSCILLOSCOPE
10×
ATTENUATOR
(1)
50 Ω
CZ
IEC 61000-4-2 network
CZ = 150 pF; RZ = 330 Ω
DUT
Device
Under
Test
(1): attenuator is only used for open
socket high voltage measurements
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 5 V/div
horizontal scale = 50 ns/div
PESD5V0L5UF/V/Y
GND1
GND
PESD3V3L5UF/V/Y
GND2
unclamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
clamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
GND
GND
vertical scale = 200 V/div
horizontal scale = 50 ns/div
unclamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)
vertical scale = 5 V/div
horizontal scale = 50 ns/div
clamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)
006aab143
Fig 8. ESD clamping test setup and waveforms
PESDXL5UF_V_Y_2
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 02 — 8 January 2008
9 of 17
PESDxL5UF/V/Y
NXP Semiconductors
Low capacitance unidirectional fivefold ESD protection diode arrays
7. Application information
The devices are designed for the protection of up to five unidirectional data or signal lines
from the damage caused by ESD and surge pulses. The devices may be used on lines
where the signal polarities are both, positive and negative with respect to ground. The
devices provide a surge capability of 25 W per line for an 8/20 µs waveform each.
high-speed data lines
high-speed data lines
DUT
DUT
GND
GND
006aab144
Fig 9. Typical application for unidirectional
application of five lines
006aab145
Fig 10. Typical application for bidirectional application
of four lines
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
PESDXL5UF_V_Y_2
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 02 — 8 January 2008
10 of 17
PESDxL5UF/V/Y
NXP Semiconductors
Low capacitance unidirectional fivefold ESD protection diode arrays
8. Package outline
0.50
max
1.05
0.95
1.7
1.5
0.04
max
0.6
3
4
2
5
1
6
0.40
0.32
0.35
0.27
6
0.6
0.5
5
4
0.25
0.17
0.3
0.1
0.5
1.5
1.4
1.7
1.5
1.3
1.1
pin 1 index
0.5
1
2
3
0.27
0.17
0.5
0.18
0.08
1
Dimensions in mm
04-07-22
Fig 11. Package outline PESDxL5UF (SOT886)
Dimensions in mm
Fig 12. Package outline PESDxL5UV (SOT666)
2.2
1.8
6
2.2 1.35
2.0 1.15
04-11-08
1.1
0.8
5
4
2
3
0.45
0.15
pin 1
index
1
0.3
0.2
0.65
0.25
0.10
1.3
Dimensions in mm
06-03-16
Fig 13. Package outline PESDxL5UY (SOT363/SC-88)
PESDXL5UF_V_Y_2
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 02 — 8 January 2008
11 of 17
PESDxL5UF/V/Y
NXP Semiconductors
Low capacitance unidirectional fivefold ESD protection diode arrays
9. Packing information
Table 10. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
PESD3V3L5UF
PESD5V0L5UF
PESD3V3L5UV
PESD5V0L5UV
Package
SOT886
SOT886
SOT666
SOT666
Description
Packing quantity
3000
4000
5000
8000
10000
4 mm pitch, 8 mm tape and reel; T1
[2]
-
-
-115
-
-
4 mm pitch, 8 mm tape and reel; T4
[3]
-
-
-132
-
-
4 mm pitch, 8 mm tape and reel; T1
[2]
-
-
-115
-
-
4 mm pitch, 8 mm tape and reel; T4
[3]
-
-
-132
-
-
2 mm pitch, 8 mm tape and reel
-
-
-
-315
-
4 mm pitch, 8 mm tape and reel
-
-115
-
-
-
2 mm pitch, 8 mm tape and reel
-
-
-
-315
-
4 mm pitch, 8 mm tape and reel
PESD3V3L5UY
PESD5V0L5UY
SOT363
SOT363
-
-115
-
-
-
4 mm pitch, 8 mm tape and reel; T1
[2]
-115
-
-
-
-135
4 mm pitch, 8 mm tape and reel; T2
[4]
-125
-
-
-
-165
4 mm pitch, 8 mm tape and reel; T1
[2]
-115
-
-
-
-135
4 mm pitch, 8 mm tape and reel; T2
[4]
-125
-
-
-
-165
[1]
For further information and the availability of packing methods, see Section 13.
[2]
T1: normal taping
[3]
T4: 90° rotated reverse taping
[4]
T2: reverse taping
10. Soldering
1.250
0.675
0.370
(6×)
0.500
1.700
solder lands
0.500
solder paste
0.270
(6×)
occupied area
Dimensions in mm
0.325
(6×)
0.425
(6×)
sot886_fr
Reflow soldering is the only recommended soldering method.
Fig 14. Reflow soldering footprint PESDxL5UF (SOT886)
PESDXL5UF_V_Y_2
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 02 — 8 January 2008
12 of 17
PESDxL5UF/V/Y
NXP Semiconductors
Low capacitance unidirectional fivefold ESD protection diode arrays
2.75
2.45
2.10
1.60
0.15
(4×)
0.40
(6×)
2.00 1.70 1.00
0.55
(2×)
0.30 (2×)
0.375
(4×)
1.20
2.20
2.50
solder lands
placement area
solder resist
occupied area
0.075
Dimensions in mm
Reflow soldering is the only recommended soldering method.
Fig 15. Reflow soldering footprint PESDxL5UV (SOT666)
2.65
0.60
(2×)
0.40 0.90 2.10
(2×)
2.35
solder lands
solder paste
0.50
(4×)
solder resist
occupied area
0.50
(4×)
Dimensions in mm
1.20
2.40
sot363
Fig 16. Reflow soldering footprint PESDxL5UY (SOT363/SC-88)
PESDXL5UF_V_Y_2
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 02 — 8 January 2008
13 of 17
PESDxL5UF/V/Y
NXP Semiconductors
Low capacitance unidirectional fivefold ESD protection diode arrays
5.25
0.30 1.00 4.00
4.50
solder lands
1.15
3.75
solder resist
occupied area
transport direction during soldering
Dimensions in mm
sot363
Fig 17. Wave soldering footprint PESDxL5UY (SOT363/SC-88)
PESDXL5UF_V_Y_2
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 02 — 8 January 2008
14 of 17
PESDxL5UF/V/Y
NXP Semiconductors
Low capacitance unidirectional fivefold ESD protection diode arrays
11. Revision history
Table 11.
Revision history
Document ID
Release date
Data sheet status
Change notice Supersedes
PESDXL5UF_V_Y_2
20080108
Product data sheet
-
Modifications:
PESD3V3L5UV_
PESD5V0L5UV_1
PESD3V3L5UY_
PESD5V0L5UY_1
•
The format of this data sheet has been redesigned to comply with the new
identity guidelines of NXP Semiconductors.
•
•
•
•
•
•
•
•
•
•
•
Legal texts have been adapted to the new company name where appropriate.
Type numbers PESD3V3L5UF and PESD5V0L5UF added
Table 1 “Product overview”: added
Section 4 “Marking”: marking code for PESD3V3L5UV amended
Section 4 “Marking”: marking code for PESD5V0L5UV amended
Section 4 “Marking”: marking code for PESD3V3L5UY amended
Section 4 “Marking”: marking code for PESD5V0L5UY amended
Figure 7: added
Section 9 “Packing information”: added
Section 10 “Soldering”: added
Section 12 “Legal information”: updated
PESD3V3L5UV_PESD5V0L5UV_1 20040323
Product specification -
-
PESD3V3L5UY_PESD5V0L5UY_1 20040323
Product specification -
-
PESDXL5UF_V_Y_2
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 02 — 8 January 2008
15 of 17
PESDxL5UF/V/Y
NXP Semiconductors
Low capacitance unidirectional fivefold ESD protection diode arrays
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
PESDXL5UF_V_Y_2
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 02 — 8 January 2008
16 of 17
PESDxL5UF/V/Y
NXP Semiconductors
Low capacitance unidirectional fivefold ESD protection diode arrays
14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 3
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Application information. . . . . . . . . . . . . . . . . . 10
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Packing information. . . . . . . . . . . . . . . . . . . . . 12
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 15
Legal information. . . . . . . . . . . . . . . . . . . . . . . 16
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Contact information. . . . . . . . . . . . . . . . . . . . . 16
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 8 January 2008
Document identifier: PESDXL5UF_V_Y_2
Similar pages