Data Sheet

PESDxL4UF; PESDxL4UG;
PESDxL4UW
Low capacitance unidirectional quadruple ESD protection
diode arrays
Rev. 04 — 28 February 2008
Product data sheet
1. Product profile
1.1 General description
Low capacitance unidirectional quadruple ElectroStatic Discharge (ESD) protection diode
arrays in small Surface-Mounted Device (SMD) plastic packages designed to protect up to
four signal lines from the damage caused by ESD and other transients.
Table 1.
Product overview
Type number
Package
Package configuration
NXP
JEITA
JEDEC
PESD3V3L4UF
SOT886
-
MO-252
leadless ultra small
PESD5V0L4UF
SOT886
-
MO-252
leadless ultra small
PESD3V3L4UG
SOT353
SC-88A
-
very small
PESD5V0L4UG
SOT353
SC-88A
-
very small
PESD3V3L4UW
SOT665
-
-
ultra small and flat lead
PESD5V0L4UW
SOT665
-
-
ultra small and flat lead
1.2 Features
n
n
n
n
ESD protection of up to four lines
Low diode capacitance
Max. peak pulse power: PPP = 30 W
Low clamping voltage: VCL = 12 V
n
n
n
n
Ultra low leakage current: IRM = 5 nA
ESD protection up to 20 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); IPP = 2.5 A
1.3 Applications
n Computers and peripherals
n Audio and video equipment
n Cellular handsets and accessories
n Communication systems
n Portable electronics
n Subscriber Identity Module (SIM) card
protection
PESDxL4UF/G/W
NXP Semiconductors
Low capacitance unidirectional quadruple ESD protection diode arrays
1.4 Quick reference data
Table 2.
Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
PESD3V3L4UF
PESD3V3L4UG
PESD3V3L4UW
-
-
3.3
V
PESD5V0L4UF
PESD5V0L4UG
PESD5V0L4UW
-
-
5.0
V
PESD3V3L4UF
PESD3V3L4UG
PESD3V3L4UW
-
22
28
pF
PESD5V0L4UF
PESD5V0L4UG
PESD5V0L4UW
-
16
19
pF
Per diode
VRWM
Cd
reverse standoff voltage
diode capacitance
f = 1 MHz; VR = 0 V
2. Pinning information
Table 3.
Pinning
Pin
Description
Simplified outline
Symbol
PESD3V3L4UF; PESD5V0L4UF
1
cathode (diode 1)
2
common anode
3
1
2
3
1
6
cathode (diode 2)
2
5
4
cathode (diode 3)
3
4
5
common anode
6
cathode (diode 4)
6
5
bottom view
006aaa156
4
PESD3V3L4UG; PESD5V0L4UG
1
cathode (diode 1)
2
common anode
3
cathode (diode 2)
4
cathode (diode 3)
5
cathode (diode 4)
5
4
1
5
2
3
1
2
4
3
006aaa157
PESD3V3L4UW; PESD5V0L4UW
1
cathode (diode 1)
2
common anode
3
cathode (diode 2)
2
4
cathode (diode 3)
3
5
cathode (diode 4)
5
1
1
PESDXL4UF_G_W_4
Product data sheet
4
2
3
5
4
006aaa157
© NXP B.V. 2008. All rights reserved.
Rev. 04 — 28 February 2008
2 of 17
PESDxL4UF/G/W
NXP Semiconductors
Low capacitance unidirectional quadruple ESD protection diode arrays
3. Ordering information
Table 4.
Ordering information
Type number
Package
PESD3V3L4UF
Name
Description
Version
XSON6
plastic extremely thin small outline package;
no leads; 6 terminals; body 1 × 1.45 × 0.5 mm
SOT886
SC-88A
plastic surface-mounted package; 5 leads
SOT353
-
plastic surface-mounted package; 5 leads
SOT665
PESD5V0L4UF
PESD3V3L4UG
PESD5V0L4UG
PESD3V3L4UW
PESD5V0L4UW
4. Marking
Table 5.
Marking codes
Type number
Marking code[1]
PESD3V3L4UF
A5
PESD5V0L4UF
A6
PESD3V3L4UG
L1*
PESD5V0L4UG
L2*
PESD3V3L4UW
A2
PESD5V0L4UW
A1
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
PPP
peak pulse power
tp = 8/20 µs
[1][2][3]
IPP
peak pulse current
tp = 8/20 µs
[1][2][3]
-
30
W
PESD3V3L4UF
PESD3V3L4UG
PESD3V3L4UW
-
3.0
A
PESD5V0L4UF
PESD5V0L4UG
PESD5V0L4UW
-
2.5
A
-
3.5
A
Per diode
IFSM
non-repetitive peak forward square wave;
current
tp = 1 ms
PESDXL4UF_G_W_4
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 04 — 28 February 2008
3 of 17
PESDxL4UF/G/W
NXP Semiconductors
Low capacitance unidirectional quadruple ESD protection diode arrays
Table 6.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Min
Max
Unit
IZSM
non-repetitive peak reverse square wave;
current
tp = 1 ms
PESD3V3L4UF
PESD3V3L4UG
PESD3V3L4UW
-
0.9
A
PESD5V0L4UF
PESD5V0L4UG
PESD5V0L4UW
-
0.8
A
non-repetitive peak reverse square wave;
power dissipation
tp = 1 ms
-
6
W
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
PZSM
Conditions
Per device
[1]
Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2]
For PESDxL4UF measured from pin 1, 3, 4 or 6 to pin 2 or 5.
[3]
For PESDxL4UG and PESDxL4UW measured from pin 1, 3, 4 or 5 to pin 2.
Table 7.
ESD maximum ratings
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
electrostatic discharge voltage
IEC 61000-4-2
(contact discharge)
Min
Max
Unit
-
20
kV
-
10
kV
Per diode
VESD
[1][2][3]
MIL-STD-883 (human
body model)
[1]
Device stressed with ten non-repetitive ESD pulses.
[2]
For PESDxL4UF measured from pin 1, 3, 4 or 6 to pin 2 or 5.
[3]
For PESDxL4UG and PESDxL4UW measured from pin 1, 3, 4 or 5 to pin 2.
Table 8.
ESD standards compliance
Standard
Conditions
Per diode
IEC 61000-4-2; level 4 (ESD)
> 15 kV (air); > 8 kV (contact)
MIL-STD-883; class 3 (human body model)
> 4 kV
PESDXL4UF_G_W_4
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 04 — 28 February 2008
4 of 17
PESDxL4UF/G/W
NXP Semiconductors
Low capacitance unidirectional quadruple ESD protection diode arrays
001aaa631
IPP
001aaa630
120
100 %
90 %
100 % IPP; 8 µs
IPP
(%)
80
e−t
50 % IPP; 20 µs
40
10 %
t
tr = 0.7 ns to 1 ns
0
0
10
20
30
30 ns
40
t (µs)
60 ns
Fig 1. 8/20 µs pulse waveform according to
IEC 61000-4-5
Fig 2. ESD pulse waveform according to
IEC 61000-4-2
6. Characteristics
Table 9.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
PESD3V3L4UF
PESD3V3L4UG
PESD3V3L4UW
-
-
3.3
V
PESD5V0L4UF
PESD5V0L4UG
PESD5V0L4UW
-
-
5.0
V
Per diode
VRWM
IRM
VBR
reverse standoff voltage
reverse leakage current
PESD3V3L4UF
PESD3V3L4UG
PESD3V3L4UW
VRWM = 3.3 V
-
75
300
nA
PESD5V0L4UF
PESD5V0L4UG
PESD5V0L4UW
VRWM = 5.0 V
-
5
25
nA
PESD3V3L4UF
PESD3V3L4UG
PESD3V3L4UW
5.32
5.6
5.88
V
PESD5V0L4UF
PESD5V0L4UG
PESD5V0L4UW
6.46
6.8
7.14
V
breakdown voltage
IR = 1 mA
PESDXL4UF_G_W_4
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 04 — 28 February 2008
5 of 17
PESDxL4UF/G/W
NXP Semiconductors
Low capacitance unidirectional quadruple ESD protection diode arrays
Table 9.
Characteristics …continued
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Cd
f = 1 MHz;
VR = 0 V
VCL
rdif
Min
Typ
Max
Unit
PESD3V3L4UF
PESD3V3L4UG
PESD3V3L4UW
-
22
28
pF
PESD5V0L4UF
PESD5V0L4UG
PESD5V0L4UW
-
16
19
pF
diode capacitance
[1][2][3]
clamping voltage
PESD3V3L4UF
PESD3V3L4UG
PESD3V3L4UW
IPP = 1 A
-
-
8
V
PESD3V3L4UF
PESD3V3L4UG
PESD3V3L4UW
IPP = 3 A
-
-
12
V
PESD5V0L4UF
PESD5V0L4UG
PESD5V0L4UW
IPP = 1 A
-
-
10
V
PESD5V0L4UF
PESD5V0L4UG
PESD5V0L4UW
IPP = 2.5 A
-
-
13
V
differential resistance
IR = 1 mA
PESD3V3L4UF
PESD3V3L4UG
PESD3V3L4UW
-
-
200
Ω
PESD5V0L4UF
PESD5V0L4UG
PESD5V0L4UW
-
-
100
Ω
[1]
Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2]
For PESDxL4UF measured from pin 1, 3, 4 or 6 to pin 2 or 5.
[3]
For PESDxL4UG and PESDxL4UW measured from pin 1, 3, 4 or 5 to pin 2.
PESDXL4UF_G_W_4
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 04 — 28 February 2008
6 of 17
PESDxL4UF/G/W
NXP Semiconductors
Low capacitance unidirectional quadruple ESD protection diode arrays
006aab134
10
IZSM
(A)
006aab135
102
PZSM
(W)
(1)
1
10
(1)
(2)
(2)
10−1
10−2
10−1
1
1
10−2
10
10−1
1
tp (ms)
10
tp (ms)
Tamb = 25 °C
Tamb = 25 °C
(1) PESD3V3L4UF; PESD3V3L4UG; PESD3V3L4UW
(1) PESD3V3L4UF; PESD3V3L4UG; PESD3V3L4UW
(2) PESD5V0L4UF; PESD5V0L4UG; PESD5V0L4UW
(2) PESD5V0L4UF; PESD5V0L4UG; PESD5V0L4UW
Fig 3. Non-repetitive peak reverse current as a
function of pulse duration; maximum values
Fig 4. Non-repetitive peak reverse power dissipation
as a function of pulse duration; maximum
values
006aab136
26
006aab137
10
Cd
(pF)
22
IR
IR(25°C)
18
1
(1)
14
(2)
10
6
0
1
2
3
4
5
10−1
−75
VR (V)
−25
25
75
125
175
Tj (°C)
f = 1 MHz; Tamb = 25 °C
(1) PESD3V3L4UF; PESD3V3L4UG; PESD3V3L4UW
(2) PESD5V0L4UF; PESD5V0L4UG; PESD5V0L4UW
Fig 5. Diode capacitance as a function of reverse
voltage; typical values
Fig 6. Relative variation of reverse current as a
function of junction temperature; typical values
PESDXL4UF_G_W_4
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 04 — 28 February 2008
7 of 17
PESDxL4UF/G/W
NXP Semiconductors
Low capacitance unidirectional quadruple ESD protection diode arrays
I
−VCL −VBR −VRWM
V
−IRM
−IR
−
+
P-N
−IPP
006aaa407
Fig 7. V-I characteristics for a unidirectional ESD protection diode
PESDXL4UF_G_W_4
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 04 — 28 February 2008
8 of 17
PESDxL4UF/G/W
NXP Semiconductors
Low capacitance unidirectional quadruple ESD protection diode arrays
ESD TESTER
RZ
450 Ω
RG 223/U
50 Ω coax
DIGITIZING
OSCILLOSCOPE
10×
ATTENUATOR
(1)
CZ
IEC 61000-4-2 network
CZ = 150 pF; RZ = 330 Ω
50 Ω
DUT
DEVICE
UNDER
TEST
(1): attenuator is only used for open
socket high voltage measurements
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 5 V/div
horizontal scale = 50 ns/div
PESD5V0L4UF/G/W
GND2
PESD3V3L4UF/G/W
GND
GND1
unclamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
clamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
GND
GND
vertical scale = 200 V/div
horizontal scale = 50 ns/div
unclamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)
vertical scale = 5 V/div
horizontal scale = 50 ns/div
clamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)
006aab138
Fig 8. ESD clamping test setup and waveforms
PESDXL4UF_G_W_4
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 04 — 28 February 2008
9 of 17
PESDxL4UF/G/W
NXP Semiconductors
Low capacitance unidirectional quadruple ESD protection diode arrays
7. Application information
The devices are designed for the protection of up to four unidirectional data or signal lines
from the damage caused by ESD and surge pulses. The devices may be used on lines
where the signal polarities are both, positive and negative with respect to ground. The
devices provide a surge capability of 30 W per line for an 8/20 µs waveform each.
data- or transmission lines
DUT
1
DUT
5
5
n.c. 2
2
3
1
4
unidirectional protection of 4 lines
3
4
bidirectional protection of 3 lines
006aab126
Fig 9. Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
PESDXL4UF_G_W_4
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 04 — 28 February 2008
10 of 17
PESDxL4UF/G/W
NXP Semiconductors
Low capacitance unidirectional quadruple ESD protection diode arrays
8. Package outline
0.50
max
1.05
0.95
2.2
1.8
0.04
max
0.6
3
4
2
5
1
6
0.40
0.32
0.35
0.27
5
0.45
0.15
4
0.25
0.17
0.5
1.5
1.4
1.1
0.8
2.2 1.35
2.0 1.15
0.5
1
2
3
0.3
0.2
0.65
0.25
0.10
1.3
Dimensions in mm
04-07-22
Dimensions in mm
Fig 10. Package outline PESDxL4UF (SOT886)
04-11-16
Fig 11. Package outline PESDxL4UG (SOT353/SC-88A)
1.7
1.5
0.6
0.5
5
4
0.3
0.1
1.7
1.5
1.3
1.1
1
2
3
0.27
0.17
0.5
0.18
0.08
1
Dimensions in mm
04-11-08
Fig 12. Package outline PESDxL4UW (SOT665)
PESDXL4UF_G_W_4
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 04 — 28 February 2008
11 of 17
PESDxL4UF/G/W
NXP Semiconductors
Low capacitance unidirectional quadruple ESD protection diode arrays
9. Packing information
Table 10. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
PESD3V3L4UF
PESD5V0L4UF
PESD3V3L4UG
PESD5V0L4UG
PESD3V3L4UW
PESD5V0L4UW
Package
SOT886
SOT886
SOT353
SOT353
SOT665
SOT665
Description
Packing quantity
3000
4000
5000
8000
10000
4 mm pitch, 8 mm tape and reel; T1
[2]
-
-
-115
-
-
4 mm pitch, 8 mm tape and reel; T4
[3]
-
-
-132
-
-
4 mm pitch, 8 mm tape and reel; T1
[2]
-
-
-115
-
-
4 mm pitch, 8 mm tape and reel; T4
[3]
-
-
-132
-
-
4 mm pitch, 8 mm tape and reel; T1
[2]
-115
-
-
-
-135
4 mm pitch, 8 mm tape and reel; T2
[4]
-125
-
-
-
-165
4 mm pitch, 8 mm tape and reel; T1
[2]
-115
-
-
-
-135
4 mm pitch, 8 mm tape and reel; T2
[4]
-125
-
-
-
-165
2 mm pitch, 8 mm tape and reel
-
-
-
-315
-
4 mm pitch, 8 mm tape and reel
-
-115
-
-
-
2 mm pitch, 8 mm tape and reel
-
-
-
-315
-
4 mm pitch, 8 mm tape and reel
-
-115
-
-
-
[1]
For further information and the availability of packing methods, see Section 13.
[2]
T1: normal taping
[3]
T4: 90° rotated reverse taping
[4]
T2: reverse taping
10. Soldering
1.250
0.675
0.370
(6×)
0.500
1.700
solder lands
0.500
solder paste
0.270
(6×)
occupied area
Dimensions in mm
0.325
(6×)
0.425
(6×)
sot886_fr
Reflow soldering is the only recommended soldering method.
Fig 13. Reflow soldering footprint PESDxL4UF (SOT886)
PESDXL4UF_G_W_4
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 04 — 28 February 2008
12 of 17
PESDxL4UF/G/W
NXP Semiconductors
Low capacitance unidirectional quadruple ESD protection diode arrays
2.65
0.60
(1×)
0.40 0.90 2.10
2.35
0.50
(4×)
solder lands
0.50
(4×)
solder paste
1.20
solder resist
2.40
occupied area
Dimensions in mm
sot353_fr
Fig 14. Reflow soldering footprint PESDxL4UG (SOT353/SC-88A)
2.25
2.65
0.30 1.00 4.00
4.50 2.70 0.70
solder lands
1.15
3.75
solder resist
transport direction during soldering
occupied area
Dimensions in mm
Fig 15. Wave soldering footprint PESDxL4UG (SOT353/SC-88A)
PESDXL4UF_G_W_4
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 04 — 28 February 2008
13 of 17
PESDxL4UF/G/W
NXP Semiconductors
Low capacitance unidirectional quadruple ESD protection diode arrays
2.45
2.10
1.60
0.15
(2x)
0.70
(2×)
0.40
(5×)
0.45
(2×)
2.00 1.70 1.00
0.30
0.55
0.375
(2×)
1.25
1.375
1.20
2.20
solder lands
placement area
solder resist
occupied area
0.075
Dimensions in mm
Reflow soldering is the only recommended soldering method.
Fig 16. Reflow soldering footprint PESDxL4UW (SOT665)
PESDXL4UF_G_W_4
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 04 — 28 February 2008
14 of 17
PESDxL4UF/G/W
NXP Semiconductors
Low capacitance unidirectional quadruple ESD protection diode arrays
11. Revision history
Table 11.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PESDXL4UF_G_W_4
20080228
Product data sheet
-
PESDXL4UF_G_W_3
Modifications:
•
Figure 8 “ESD clamping test setup and waveforms”: amended
PESDXL4UF_G_W_3
20080114
Product data sheet
-
PESDXL4UW_SER_2
PESDXL4UG_SERIES_1
PESDXL4UW_SER_2
20040406
Product specification
-
PESDXL4UW_SERIES_1
PESDXL4UG_SERIES_1 20040323
Product specification
-
-
PESDXL4UF_G_W_4
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 04 — 28 February 2008
15 of 17
PESDxL4UF/G/W
NXP Semiconductors
Low capacitance unidirectional quadruple ESD protection diode arrays
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
PESDXL4UF_G_W_4
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 04 — 28 February 2008
16 of 17
PESDxL4UF/G/W
NXP Semiconductors
Low capacitance unidirectional quadruple ESD protection diode arrays
14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 3
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Application information. . . . . . . . . . . . . . . . . . 10
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Packing information. . . . . . . . . . . . . . . . . . . . . 12
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 15
Legal information. . . . . . . . . . . . . . . . . . . . . . . 16
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Contact information. . . . . . . . . . . . . . . . . . . . . 16
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 28 February 2008
Document identifier: PESDXL4UF_G_W_4
Similar pages