PANASONIC 2SC4502

Transistor
2SC4502
Silicon NPN epitaxial planer type
For mtermediate frequency amplification
Unit: mm
1.05 2.5±0.1
±0.05
■ Features
0.65 max.
14.5±0.5
●
High transition frequency fT.
Large collector power dissipation PC.
Allowing supply with the radial taping.
0.8
0.2
●
(1.45)
1.0 1.0
●
4.0
0.5
4.5±0.1
0.15
6.9±0.1
0.7
Symbol
Ratings
+0.1
0.45–0.05
2.5±0.5
Unit
*
Collector to base voltage
VCBO
50
V
Collector to emitter voltage
VCEO
45
V
Emitter to base voltage
VEBO
4
V
Collector current
IC
50
mA
Collector power dissipation
PC*
1
W
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
2.5±0.5
2
3
2.5±0.1
1
+0.1
Parameter
(Ta=25˚C)
0.45–0.05
■ Absolute Maximum Ratings
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
1:Emitter
2:Collector
3:Base
MT2 Type Package
1.2±0.1
0.65
max.
0.45+–0.1
0.05
(HW type)
■ Electrical Characteristics
Parameter
(Ta=25˚C)
Symbol
Conditions
min
VCB = 20V, IE = 0
typ
max
Unit
100
nA
Collector cutoff current
ICBO
Collector to base voltage
VCBO
IC = 100µA, IE = 0
50
V
Collector to emitter voltage
VCEO
IC = 1mA, IB = 0
45
V
Emitter to base voltage
VEBO
IE = 100µA, IC = 0
4
Forward current transfer ratio
hFE
VCE = 10V, IC = 10µA
20
Collector to emitter saturation voltage
VCE(sat)
IC = 20mA, IB = 2mA
Transition frequency
fT
VCB = 10V, IE = –10mA, f = 200MHz
Common emitter reverse transfer capacitance
Cre
VCB = 10V, IE = –1mA, f = 10.7MHz
Power gain
PG
VCB = 10V, IE = –10mA, f = 58MHz
V
100
0.4
300
22
V
MHz
1.5
pF
30
dB
1
Transistor
2SC4502
PC — Ta
IC — VCE
1.0
0.8
0.6
0.4
60
IB=2.0mA
1.8mA
60
1.6mA
50
1.4mA
1.2mA
40
1.0mA
30
0.8mA
0.6mA
20
0.4mA
0.2
10
40
60
80 100 120 140 160
10
3
1
Ta=100˚C
–25˚C
0.1
25˚C
0.03
1
3
2
4
8
10
10
30
60
Ta=100˚C
40
25˚C
–25˚C
20
0.3
1
3
10
30
–2.4
10
300
200
100
30
100
Collector to base voltage VCB (V)
–3
–10
30
IC=1mA
f=10.7MHz
Ta=25˚C
–2.0
–1
–30
–100
PG — IE
–1.6
–1.2
– 0.4
0
2.0
Emitter current IE (mA)
– 0.8
0.5
1.6
400
0
– 0.1 – 0.3
100
VCB=10V
f=58MHz
Ta=25˚C
25
Power gain PG (dB)
Common emitter reverse transfer capacitance Cre (pF)
1.0
1.2
VCB=10V
Ta=25˚C
Cre — VCE
1.5
0.8
500
Collector current IC (mA)
2.0
3
0.4
Base to emitter voltage VBE (V)
fT — I E
80
0
0.1
100
IE=0
f=1MHz
Ta=25˚C
1
0
600
Cob — VCB
2.5
6
VCE=10V
Collector current IC (mA)
3.0
20
10
100
Forward current transfer ratio hFE
Collector to emitter saturation voltage VCE(sat) (V)
30
0.3
30
Collector to emitter voltage VCE (V)
IC/IB=10
0.01
0.1
40
hFE — IC
100
–25˚C
0
0
VCE(sat) — IC
0.3
Ta=100˚C
0.2mA
Transition frequency fT (MHz)
20
Ambient temperature Ta (˚C)
Collector output capacitance Cob (pF)
50
0
0
VCE=10V
25˚C
70
Collector current IC (mA)
Printed circut board: Copper
foil area of 1cm2 or more, and
the board thickness of 1.7mm
for the collector portion.
0
2
IC — VBE
80
Collector current IC (mA)
Collector power dissipation PC (W)
1.2
20
15
10
5
0
1
3
10
30
100
Collector to emitter voltage VCE (V)
0
– 0.1 – 0.3
–1
–3
–10
–30
Emitter current IE (mA)
–100