Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D302
BZA462A
Quadruple ESD transient voltage
suppressor
Product data sheet
Supersedes data of 1998 Oct 30
1999 May 25
NXP Semiconductors
Product data sheet
Quadruple ESD transient voltage
suppressor
BZA462A
FEATURES
PINNING
• ESD rating >15 kV, according to IEC1000-4-2
PIN
DESCRIPTION
• SOT457 surface mount package
1
cathode 1
• Common anode configuration
2
common
• Non-clamping range −0.5 to 6.2 V
3
cathode 2
• Maximum reverse peak power dissipation:
24 W at tp = 1 ms
4
cathode 3
• Maximum clamping voltage at peak pulse current:
9 V at IZSM = 2.66 A.
5
common
6
cathode 4
APPLICATIONS
handbook, halfpage
6
• Computers and peripherals
5
4
1
• Audio and video equipment
3
2
• Communication systems
4
5
• Medical equipment.
6
1
2
3
Top view
DESCRIPTION
Monolithic transient voltage suppressor diode in a six lead
SOT457 (SC-74) package for 4-bit wide ESD transient
suppression at 6.2 V level.
MAM357
Marking code: Z2t.
Fig.1 Simplified outline (SOT457) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
IZ
working current
Ts = 60 °C; note 1
−
note 2
mA
IF
continuous forward current
Ts = 60 °C
−
100
mA
IFSM
non-repetitive peak forward current
tp = 1 ms; square pulse
−
3.75
A
IZSM
non-repetitive peak reverse current
tp = 1 ms; square pulse; see Fig.2
−
2.66
A
Ptot
total power dissipation
Ts = 60 °C; see Fig.3
−
720
mW
PZSM
non repetitive peak reverse power
dissipation
square pulse; tp = 1 ms; see Fig.4
−
24
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−65
+150
°C
Notes
1. Ts is the temperature at the soldering point of the anode pin.
2. DC working current limited by Ptot max.
1999 May 25
2
NXP Semiconductors
Product data sheet
Quadruple ESD transient voltage
suppressor
BZA462A
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to soldering point
VALUE
UNIT
125
K/W
one or more diodes loaded
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per diode
VZ
working voltage
IZ = 1 mA
5.89
6.2
6.51
V
VF
forward voltage
IF = 200 mA
−
−
1.3
V
VZSM
non-repetitive peak reverse voltage
IZSM = 3.5 A; tp = 1 ms
−
−
9
V
IR
reverse current
VR = 4 V
−
−
700
nA
rdif
differential resistance
IZ = 1 mA
−
−
300
Ω
SZ
temperature coefficient of working
voltage
IZ = 5 mA
−
1.2
−
mV/K
Cd
diode capacitance
see Fig.5
VR = 0; f = 1 MHz
−
−
200
pF
VR = 4 V; f = 1 MHz
−
−
110
pF
1999 May 25
3
NXP Semiconductors
Product data sheet
Quadruple ESD transient voltage
suppressor
BZA462A
MBK479
10
MDA198
1000
Ptot
handbook, halfpage
handbook, halfpage
(mW)
800
600
IZSM
(A)
400
200
1
10−1
1
0
10
tp (ms)
0
50
100
150
Ts (oC)
200
All diodes loaded.
Fig.2
Maximum non-repetitive peak reverse
current as a function of pulse time.
Fig.3 Power derating curve.
MBK481
102
handbook, halfpage
MBK480
200
Cd
handbook, halfpage
(pF)
160
PZSM
(W)
120
10
80
40
1
10−1
0
1
tp (ms)
0
10
1
2
3
4
5
6
VR (V)
PZSM = VZSM × IZSM.
VZSM is the non-repetitive peak reverse voltage at IZSM.
Tj = 25 °C; f = 1 MHz.
Fig.4
Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
1999 May 25
Fig.5
4
Diode capacitance as a function of reverse
voltage; typical values.
NXP Semiconductors
Product data sheet
Quadruple ESD transient voltage
suppressor
ESD TESTER
RZ
450 Ω
BZA462A
RG 223/U
50 Ω coax
CZ
DIGITIZING
OSCILLOSCOPE
10×
ATTENUATOR
50 Ω
note 1
Note 1: attenuator is only used for open
socket high voltage measurements
IEC 1000-4-2 network
CZ = 150 pF; RZ = 330 Ω
1/4 BZA462A
vertical scale = 100 V/Div
horizontal scale = 50 ns/Div
vertical scale = 10 V/Div
horizontal scale = 50 ns/Div
GND
GND
unclamped +1 kV ESD voltage waveform
(IEC 1000−4−2 network)
clamped +1 kV ESD voltage waveform
(IEC 1000−4−2 network)
GND
GND
vertical scale = 100 V/Div
horizontal scale = 50 ns/Div
unclamped −1 kV ESD voltage waveform
(IEC 1000−4−2 network)
vertical scale = 10 V/Div
horizontal scale = 50 ns/Div
clamped −1 kV ESD voltage waveform
(IEC 1000−4−2 network)
Fig.6 ESD clamping test set-up and waveforms.
1999 May 25
5
MBK478
NXP Semiconductors
Product data sheet
Quadruple ESD transient voltage
suppressor
BZA462A
APPLICATION INFORMATION
Typical common anode application
A quadruple transient suppressor in a SOT457 package makes it possible to protect four separate lines using only one
package. Two simplified examples are shown in Figs 7 and 8.
handbook, full pagewidth
keyboard,
terminal,
printer,
etc.
A
B
C
D
I/O
FUNCTIONAL
DECODER
BZA462A
GND
MBK476
Fig.7 Computer interface protection.
VDD
handbook, full pagewidth
VGG
address bus
RAM
I/O
ROM
data bus
CPU
CLOCK
control bus
BZA462A
GND
MBK477
Fig.8 Microprocessor protection.
1999 May 25
6
NXP Semiconductors
Product data sheet
Quadruple ESD transient voltage
suppressor
BZA462A
Device placement and printed-circuit board layout
Circuit board layout is of extreme importance in the
suppression of transients. The clamping voltage of the
BZA462A is determined by the peak transient current and
the rate of rise of that current (di/dt). Since parasitic
inductances can further add to the clamping voltage
(V = L di/dt) the series conductor lengths on the
printed-circuit board should be kept to a minimum. This
includes the lead length of the suppression element.
In addition to minimizing conductor length the following
printed-circuit board layout guidelines are recommended:
1. Place the suppression element close to the input
terminals or connectors.
2. Keep parallel signal paths to a minimum.
3. Avoid running protection conductors in parallel with
unprotected conductors.
4. Minimize all printed-circuit board loop areas including
power and ground loops.
5. Minimize the length of the transient return path to
ground.
6. Avoid using shared transient return paths to a common
ground point.
1999 May 25
7
NXP Semiconductors
Product data sheet
Quadruple ESD transient voltage
suppressor
BZA462A
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT457
D
E
B
y
A
HE
6
X
v M A
4
5
Q
pin 1
index
A
A1
c
1
2
3
Lp
bp
e
w M B
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
c
D
E
e
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.1
0.013
0.40
0.25
0.26
0.10
3.1
2.7
1.7
1.3
0.95
3.0
2.5
0.6
0.2
0.33
0.23
0.2
0.2
0.1
OUTLINE
VERSION
SOT457
1999 May 25
REFERENCES
IEC
JEDEC
EIAJ
SC-74
8
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
01-05-04
NXP Semiconductors
Product data sheet
Quadruple ESD transient voltage
suppressor
BZA462A
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
1999 May 25
9
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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Printed in The Netherlands
115002/00/03/pp10
Date of release: 1999 May 25
Document order number: 9397 750 05926