Transistors with built-in Resistor UNR211x Series (UN211x Series) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • Mini type package allowing easy automatic insertion through tape packing and magazine packing 5˚ 1.50+0.25 –0.05 ■ Features 2.8+0.2 –0.3 3 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 ■ Resistance by Part Number 1.1+0.3 –0.1 1.1+0.2 –0.1 (R2) 10 kΩ 22 kΩ 47 kΩ 47 kΩ 5.1 kΩ 10 kΩ 10 kΩ 22 kΩ 10 kΩ 10 kΩ 4.7 kΩ 47 kΩ 47 kΩ 47 kΩ 2.2 kΩ 22 kΩ 0 to 0.1 • UNR2110 • UNR2111 • UNR2112 • UNR2113 • UNR2114 • UNR2115 • UNR2116 • UNR2117 • UNR2118 • UNR2119 • UNR211D • UNR211E • UNR211F • UNR211H • UNR211L • UNR211M • UNR211N • UNR211T • UNR211V • UNR211Z 10˚ Marking Symbol (R1) (UN2110) 6L 47 kΩ (UN2111) 6A 10 kΩ (UN2112) 6B 22 kΩ (UN2113) 6C 47 kΩ (UN2114) 6D 10 kΩ (UN2115) 6E 10 kΩ (UN2116) 6F 4.7 kΩ (UN2117) 6H 22 kΩ (UN2118) 6I 0.51 kΩ (UN2119) 6K 1 kΩ (UN211D) 6M 47 kΩ (UN211E) 6N 47 kΩ (UN211F) 6O 4.7 kΩ (UN211H) 6P 2.2 kΩ (UN211L) 6Q 4.7 kΩ (UN211M) EI 2.2 kΩ (UN211N) EW 4.7 kΩ (UN211T) EY 22 kΩ (UN211V) FC 2.2 kΩ (UN211Z) FE 4.7 kΩ 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package Internal Connection R1 B C R2 E ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −50 V Collector-emitter voltage (Base open) VCEO −50 V Collector current IC −100 mA Total power dissipation PT 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note) The part numbers in the parenthesis show conventional part number. Publication date: December 2003 SJH00006CED 1 UNR211x Series ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −50 Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −50 Collector-base cutoff current (Emitter open) ICBO VCB = −50 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = −50 V, IB = 0 − 0.5 µA Emitter-base IEBO VEB = −6 V, IC = 0 − 0.01 mA UNR2110/2115/2116/2117 Conditions Min Typ Max V V − 0.1 cutoff current UNR2113 − 0.1 (Collector open) UNR2112/2114/211D/ 211E/211M/211N/211T − 0.2 UNR211Z − 0.4 UNR2111 − 0.5 UNR211F/211H −1.0 UNR2119 −1.5 UNR2118/211L/211V −2.0 Forward current UNR211V transfer ratio VCE = −10 V, IC = −5 mA hFE 20 UNR2119/211D/211F/211H 30 UNR2111 35 UNUNR2112/211E 60 UNR211Z 60 UNR2113/2114/211M 80 UNR211N/211T 80 UNR2110*/2115*/2116*/2117* Collector-emitter saturation voltage 20 µA 200 400 160 VCE(sat) 460 IC = −10 mA, IB = − 0.3 mA − 0.25 V IC = −10 mA, IB = −1.5 mA UNR211V Output voltage high-level VOH VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ Output voltage low-level VOL VCC = −5 V, VB = −2.5 V, RL = 1 kΩ UNR2113 VCC = −5 V, VB = −3.5 V, RL = 1 kΩ UNR211D VCC = −5 V, VB = −10 V, RL = 1 kΩ UNR211E VCC = −5 V, VB = −6 V, RL = 1 kΩ Transition frequency fT UNR2114/2119/211E 211F/211H Input resistance 6 UNR2118/211L Unit UNR2118 −4.9 V − 0.2 VCB = −10 V, IE = 1 mA, f = 200 MHz 80 VCB = −10 V, IE = 2 mA, f = 200 MHz 150 −30% R1 0.51 UNR2119 1.0 UNR211H/211M/211V 2.2 UNR2116/211F/211L/211N/211Z 4.7 UNR2111/2114/2115 10 UNR2112/2117/211T 22 UNR2110/2113/211D/211E 47 V MHz +30% kΩ Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification 2 Rank Q R S No-rank hFE 160 to 260 210 to 340 290 to 460 160 to 460 SJH00006CED UNR211x Series ■ Electrical Characteristics (continued) Ta = 25°C ± 3°C Parameter Symbol Resistance ratio UNR211M Conditions Min R1/R2 Typ Max Unit 0.047 UNR211N 0.1 UNR2118/2119 0.08 UNR211Z 0.10 0.12 0.21 UNR2114 0.17 UNR211H 0.17 UNR211T 0.21 0.25 0.22 0.27 0.47 UNR211F 0.37 UNR211V 0.47 0.57 1.0 UNR2111/2112/2113/211L 0.8 1.0 1.2 UNR211E 1.70 2.14 2.60 UNR211D 3.7 4.7 5.7 Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart PT Ta Total power dissipation PT (mW) 250 200 150 100 50 0 0 40 80 120 160 Ambient temperature Ta (°C) Characteristics charts of UNR2110 VCE(sat) IC −60 − 0.2 mA −40 − 0.1 mA −20 0 0 −2 −4 −6 −8 −10 −12 Collector-emitter voltage VCE (V) Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (mA) Ta = 25°C IB = −1.0 mA − 0.9 mA −100 − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA −80 − 0.4 mA − 0.3 mA −100 hFE IC IC / IB = 10 −10 −1 Ta = 75°C 25°C − 0.1 − 0.01 −0.1 400 −25°C −1 −10 Collector current IC (mA) SJH00006CED VCE = –10 V Forward current transfer ratio hFE IC VCE −120 −100 300 Ta = 75°C 200 25°C −25°C 100 0 −1 −10 −100 −1 000 Collector current IC (mA) 3 UNR211x Series IO VIN 4 3 2 VO = −5 V Ta = 25°C −103 −100 Input voltage VIN (V) 5 VIN IO −104 f = 1 MHz IE = 0 Ta = 25°C Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 6 −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −1 − 0.4 −100 − 0.6 − 0.8 −1.0 −1.2 −1.4 − 0.01 − 0.1 −1 −10 −100 Output current IO (mA) Input voltage VIN (V) Collector-base voltage VCB (V) Characteristics charts of UNR2111 IC VCE VCE(sat) IC − 0.9 mA Collector current IC (mA) −120 − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA −80 − 0.4 mA − 0.3 mA −40 − 0.2 mA − 0.1 mA 0 −2 0 −4 −6 −8 −10 −12 IC / IB = 10 −10 −1 − 0.1 −25°C − 0.01 − 0.1 −1 −104 −25°C 80 40 0 −1 −100 4 3 2 −10 −100 −1 000 Collector current IC (mA) VIN IO VO = −5 V Ta = 25°C −103 −100 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 25°C 120 IO VIN −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −100 Collector-base voltage VCB (V) 4 −10 Ta = 75°C VCE = −10 V Collector current IC (mA) Cob VCB 5 Ta = 75°C 25°C Collector-emitter voltage VCE (V) 6 hFE IC 160 Forward current transfer ratio hFE Ta = 25°C IB = −1.0 mA Collector-emitter saturation voltage VCE(sat) (V) −100 −160 −1 − 0.4 − 0.6 − 0.8 −1.0 −1.2 Input voltage VIN (V) SJH00006CED −1.4 − 0.01 − 0.1 −1 −10 Output current IO (mA) −100 UNR211x Series Characteristics charts of UNR2112 IC VCE VCE(sat) IC Collector current IC (mA) −120 − 0.5mA −80 − 0.4mA − 0.3mA − 0.2mA −40 − 0.1mA 0 −2 0 −4 −6 −8 −10 −12 IC / IB = 10 −10 −1 − 0.1 −25°C − 0.01 − 0.1 −1 300 Ta = 75°C 200 25°C −25°C 100 0 −1 −100 4 3 2 −100 −1 000 VIN IO −100 VO = −5 V Ta = 25°C −103 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C −10 Collector current IC (mA) IO VIN −104 Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob −10 VCE = −10 V Collector current IC (mA) Cob VCB 5 Ta = 75°C 25°C Collector-emitter voltage VCE (V) 6 hFE IC 400 Forward current transfer ratio hFE Ta = 25°C IB = −1.0 mA − 0.9mA − 0.8mA − 0.7mA − 0.6mA Collector-emitter saturation voltage VCE(sat) (V) −100 −160 −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −1 − 0.4 −100 − 0.6 − 0.8 −1.0 −1.2 −1.4 − 0.01 − 0.1 −1 −10 −100 Output current IO (mA) Input voltage VIN (V) Collector-base voltage VCB (V) Characteristics charts of UNR2113 VCE(sat) IC − 0.9 mA − 0.8 mA − 0.7 mA −120 Collector current IC (mA) Ta = 25°C − 0.6 mA − 0.5 mA − 0.4 mA −80 − 0.3 mA − 0.2 mA −40 − 0.1 mA 0 0 −2 −4 −6 −8 −10 −12 Collector-emitter voltage VCE (V) Collector-emitter saturation voltage VCE(sat) (V) IB = −1.0 mA −100 hFE IC IC / IB = 10 −10 −1 Ta = 75°C 25°C − 0.1 − 0.01 − 0.1 400 −25°C −1 −10 Collector current IC (mA) SJH00006CED VCE = −10 V Forward current transfer ratio hFE IC VCE −160 −100 Ta = 75°C 300 25°C 200 −25°C 100 0 −1 −10 −100 −1 000 Collector current IC (mA) 5 UNR211x Series IO VIN 4 3 2 −100 VO = −5 V Ta = 25°C −103 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C 5 VIN IO −104 Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 6 −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −1 − 0.4 −100 Collector-base voltage VCB (V) − 0.6 − 0.8 −1.0 −1.2 −1.4 − 0.01 − 0.1 −1 −10 −100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR2114 IC VCE VCE(sat) IC Ta = 25°C IB = −1.0 mA Collector current IC (mA) −120 − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA −80 − 0.4 mA − 0.3 mA − 0.2 mA −40 − 0.1 mA 0 −2 0 −4 −6 −8 −10 −12 Collector-emitter saturation voltage VCE(sat) (V) −100 IC / IB = 10 −10 −1 Ta = 75°C 25°C − 0.1 −1 Ta = 75°C 200 25°C −25°C 100 0 −1 −100 3 2 −100 −1 000 VIN IO VO = −5 V Ta = 25°C −103 −1 000 VO = − 0.2 V Ta = 25°C −100 Input voltage VIN (V) 4 −10 Collector current IC (mA) IO VIN Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob −10 −104 f = 1 MHz IE = 0 Ta = 25°C −102 −10 −10 −1 1 0 − 0.1 −1 −10 −100 Collector-base voltage VCB (V) 6 300 Collector current IC (mA) Cob VCB 5 VCE = −10 V −25°C − 0.01 − 0.1 Collector-emitter voltage VCE (V) 6 hFE IC 400 Forward current transfer ratio hFE −160 −1 − 0.4 − 0.6 − 0.8 −1.0 −1.2 Input voltage VIN (V) SJH00006CED −1.4 − 0.1 − 0.1 −1 −10 Output current IO (mA) −100 UNR211x Series Characteristics charts of UNR2115 IC VCE VCE(sat) IC − 0.9 mA − 0.8 mA − 0.7 mA Collector current IC (mA) −120 − 0.6 mA − 0.5 mA − 0.4 mA −80 − 0.3 mA − 0.2 mA −40 − 0.1 mA 0 −2 0 −4 −6 −8 −10 −12 IC / IB = 10 −10 −1 Ta = 75°C 25°C − 0.1 −1 −10 Ta = 75°C 200 −25°C 0 −1 −100 4 3 2 −10 −100 −1 000 Collector current IC (mA) VIN IO VO = −5 V Ta = 25˚C −103 −100 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C 25°C 100 IO VIN −104 Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 300 Collector current IC (mA) Cob VCB 5 VCE = −10 V −25°C − 0.01 −0.1 Collector-emitter voltage VCE (V) 6 hFE IC 400 Forward current transfer ratio hFE Ta = 25°C IB = −1.0 mA Collector-emitter saturation voltage VCE(sat) (V) −100 −160 −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −1 − 0.4 −100 − 0.6 − 0.8 −1.0 −1.2 −1.4 − 0.01 − 0.1 −1 −10 −100 Output current IO (mA) Input voltage VIN (V) Collector-base voltage VCB (V) Characteristics charts of UNR2116 VCE(sat) IC IB = −1.0 mA − 0.9 mA − 0.8 mA −120 Collector current IC (mA) Ta = 25°C − 0.7 mA − 0.6 mA − 0.5 mA −80 − 0.4 mA − 0.3 mA − 0.2 mA −40 − 0.1 mA 0 0 −2 −4 −6 −8 −10 −12 Collector-emitter voltage VCE (V) Collector-emitter saturation voltage VCE(sat) (V) −100 hFE IC IC / IB = 10 −10 −1 Ta = 75°C 25°C − 0.1 − 0.01 − 0.1 400 VCE = −10 V Forward current transfer ratio hFE IC VCE −160 300 Ta = 75°C 200 25°C −25°C 100 −25°C −1 −10 Collector current IC (mA) SJH00006CED −100 0 −1 −10 −100 −1 000 Collector current IC (mA) 7 UNR211x Series IO VIN f = 1 MHz IE = 0 Ta = 25°C 4 3 2 VO = −5 V Ta = 25°C −103 −100 Input voltage VIN (V) 5 VIN IO −104 Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 6 −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −1 − 0.4 −100 − 0.6 − 0.8 −1.0 −1.2 −1.4 − 0.01 − 0.1 Input voltage VIN (V) Collector-base voltage VCB (V) −1 −10 −100 Output current IO (mA) Characteristics charts of UNR2117 IC VCE VCE(sat) IC IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA − 0.4 mA Collector current IC (mA) −100 −80 −60 − 0.3 mA −40 − 0.2 mA −20 0 − 0.1 mA −2 0 −4 −6 −8 −10 −12 IC / IB = 10 −10 Ta = 75°C −1 25°C − 0.1 −25°C − 0.01 − 0.1 −1 3 2 Ta = 75°C 200 25°C 100 0 −1 −100 −25°C −10 −100 −1 000 Collector current IC (mA) VIN IO VO = −5 V Ta = 25°C −103 −100 Input voltage VIN (V) 4 −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 −0.1 −1 −10 −100 Collector-base voltage VCB (V) 8 300 IO VIN −104 f = 1 MHz IE = 0 Ta = 25°C Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 5 −10 VCE = −10 V Collector current IC (mA) Collector-emitter voltage VCE (V) 6 hFE IC 400 Forward current transfer ratio hFE Ta = 25°C −100 Collector-emitter saturation voltage VCE(sat) (V) −120 −1 − 0.4 − 0.6 − 0.8 −1.0 −1.2 Input voltage VIN (V) SJH00006CED −1.4 − 0.01 − 0.1 −1 −10 Output current IO (mA) −100 UNR211x Series Characteristics charts of UNR2118 IC VCE VCE(sat) IC −100 Collector current IC (mA) −200 IB = − 1.0 mA − 0.9 mA −160 − 0.8 mA − 0.7 mA −120 − 0.6 mA − 0.5 mA − 0.4 mA − 0.3 mA −80 −40 − 0.2 mA − 0.1 mA 0 −2 0 −4 −6 −8 −10 Collector-emitter voltage VCE −12 IC / IB = 10 −10 −1 Ta = 75°C 25°C − 0.1 − 0.01 − 0.1 −1 −10 Ta = 75°C 80 40 0 −1 −100 3 2 −10 −100 −1 000 Collector current IC (mA) VIN IO VO = −5 V Ta = 25°C −103 −100 Input voltage VIN (V) 4 25°C −25°C IO VIN −104 Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 120 Collector current IC (mA) (V) f = 1 MHz IE = 0 Ta = 25°C 5 VCE = −10 V −25°C Cob VCB 6 hFE IC 160 Forward current transfer ratio hFE Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) −240 −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −1 − 0.4 −100 Collector-base voltage VCB (V) − 0.6 − 0.8 −1.0 −1.2 −1.4 − 0.01 − 0.1 −1 −10 −100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR2119 VCE(sat) IC Ta = 25°C Collector current IC (mA) −200 IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA −160 −120 −80 − 0.6 mA − 0.5 mA − 0.4 mA − 0.3 mA − 0.2 mA − 0.1 mA −40 0 0 −2 −4 −6 −8 −10 −12 Collector-emitter voltage VCE (V) Collector-emitter saturation voltage VCE(sat) (V) −100 hFE IC IC / IB = 10 −10 −1 Ta = 75°C 25°C − 0.1 − 0.01 − 0.1 160 VCE = −10 V Forward current transfer ratio hFE IC VCE −240 120 Ta = 75°C 80 25°C −25°C 40 −25°C −1 −10 Collector current IC (mA) SJH00006CED −100 0 −1 −10 −100 −1 000 Collector current IC (mA) 9 UNR211x Series IO VIN f = 1 MHz IE = 0 Ta = 25°C 4 3 2 VO = −5 V Ta = 25°C −103 −100 Input voltage VIN (V) 5 VIN IO −104 Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 6 −102 −10 VO = −0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −1 − 0.4 −100 − 0.6 − 0.8 −1.0 −1.2 −1.4 − 0.01 − 0.1 −1 −10 −100 Output current IO (mA) Input voltage VIN (V) Collector-base voltage VCB (V) Characteristics charts of UNR211D IC VCE Ta = 25˚C −40 − 0.3 mA −30 − 0.2 mA − 0.7 mA − 0.6 mA − 0.5 mA − 0.4 mA −20 − 0.1 mA −10 0 −2 0 −4 −6 −8 −10 −12 IC / IB = 10 −10 −1 Ta = 75°C 25°C − 0.1 − 0.01 − 0.1 −1 4 3 2 −25°C 40 0 −1 −100 −10 −100 −1 000 Collector current IC (mA) VIN IO VO = −5 V Ta = 25°C −103 −100 Input voltage VIN (V) Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 25°C 80 IO VIN −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −100 Collector-base voltage VCB (V) 10 −10 −104 f = 1 MHz IE = 0 Ta = 25°C Ta = 75°C 120 Collector current IC (mA) Cob VCB 5 VCE = −10 V −25°C Collector-emitter voltage VCE (V) 6 hFE IC 160 Forward current transfer ratio hFE IB = − 1.0 mA − 0.9 mA − 0.8 mA −50 Collector current IC (mA) VCE(sat) IC −100 Collector-emitter saturation voltage VCE(sat) (V) −60 −1 −1.5 −2.0 −2.5 −3.0 −3.5 Input voltage VIN (V) SJH00006CED −4.0 − 0.01 − 0.1 −1 −10 Output current IO (mA) −100 UNR211x Series Characteristics charts of UNR211E IC VCE −40 − 0.3 mA −30 − 0.6 mA − 0.5 mA − 0.4 mA −20 − 0.2 mA − 0.1 mA −10 0 −2 0 −4 −6 −8 −10 −12 IC / IB = 10 −10 −1 Ta = 75°C 25°C − 0.1 −25°C − 0.01 − 0.1 Collector-emitter voltage VCE (V) −1 200 Ta = 75°C 100 0 −1 −100 4 3 2 25°C −25°C −10 −100 −1 000 Collector current IC (mA) VIN IO VO = −5 V Ta = 25°C −103 −100 Input voltage VIN (V) Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 300 IO VIN −104 f = 1 MHz IE = 0 Ta = 25°C 5 −10 VCE = −10 V Collector current IC (mA) Cob VCB 6 hFE IC 400 Forward current transfer ratio hFE IB = −1.0 mA Ta = 25°C − 0.9 mA − 0.8 mA − 0.7 mA −50 Collector current IC (mA) VCE(sat) IC −100 Collector-emitter saturation voltage VCE(sat) (V) −60 −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −1 −1.5 −100 −2.0 −2.5 −3.0 −3.5 −4.0 − 0.01 − 0.1 −1 −10 −100 Output current IO (mA) Input voltage VIN (V) Collector-base voltage VCB (V) Characteristics charts of UNR211F IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA −160 −120 − 0.5 mA −80 − 0.4 mA − 0.3 mA −40 0 − 0.2 mA 0 −2 −4 −6 −8 − 0.1 mA −10 −12 Collector-emitter voltage VCE (V) Collector-emitter saturation voltage VCE(sat) (V) Ta = 25°C −200 Collector current IC (mA) VCE(sat) IC −100 hFE IC IC / IB = 10 −10 −1 Ta = 75°C 25°C − 0.1 − 0.01 − 0.1 160 VCE = −10 V Forward current transfer ratio hFE IC VCE −240 120 Ta = 75°C 25°C 80 −25°C 40 −25°C −1 −10 Collector current IC (mA) SJH00006CED −100 0 −1 −10 −100 −1 000 Collector current IC (mA) 11 UNR211x Series IO VIN 4 3 2 −100 VO = −5 V Ta = 25°C −103 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C 5 VIN IO −104 Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 6 −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −1 − 0.4 −100 Collector-base voltage VCB (V) − 0.6 − 0.8 −1.0 −1.2 −1.4 − 0.01 − 0.1 −1 −10 −100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR211H IC VCE VCE(sat) IC −100 Collector current IC (mA) −100 −80 IB = − 0.5 mA − 0.4 mA −60 − 0.3 mA −40 − 0.2 mA −20 − 0.1 mA 0 −2 0 −4 −6 −8 −10 −12 −10 −1 Ta = 75°C 25°C −0.1 −25°C −0.01 −1 Collector-emitter voltage VCE (V) −100 Input voltage VIN (V) Collector output capacitance C (pF) (Common base, input open circuited) ob 4 3 2 −1 000 0 −1 −10 −100 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 − 0.01 − 0.1 −1 −10 Output current IO (mA) SJH00006CED VCE = −10 V 200 160 Ta = 75°C 120 25°C 80 −25°C 40 0 −0.1 −1 −10 Collector current IC (mA) 1 Collector-base voltage VCB (V) 12 −100 VIN IO f = 1 MHz IE = 0 Ta = 25°C 5 −10 Collector current IC (mA) Cob VCB 6 hFE IC 240 IC / IB = 10 Forward current transfer ratio hFE Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) −120 −100 −100 UNR211x Series Characteristics charts of UNR211L VCE(sat) IC Ta = 25°C Collector current IC (mA) −200 −160 IB = −1.0 mA −120 − 0.8 mA − 0.6 mA −80 − 0.4 mA −40 − 0.2 mA 0 0 –2 –4 –6 –8 –10 Collector-emitter voltage VCE Collector-emitter saturation voltage VCE(sat) (V) −100 −1 −10 −100 160 120 80 25°C −25°C 40 0 −1 −1 000 Ta = 75°C −10 −100 −1 000 Collector current IC (mA) VIN IO −100 Input voltage VIN (V) Collector output capacitance C (pF) (Common base, input open circuited) ob −25°C VCE = −10 V 200 Collector current IC (mA) (V) f = 1 MHz IE = 0 Ta = 25°C 5 Ta = 75°C 25°C − 0.1 Cob VCB 6 IC / IB = 10 −10 − 0.01 −1 –12 hFE IC 240 Forward current transfer ratio hFE IC VCE −240 4 3 2 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 −1 −10 −100 − 0.01 − 0.1 −1 −10 −100 Output current IO (mA) Collector-base voltage VCB (V) Characteristics charts of UNR211M IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA −160 −120 − 0.5 mA −80 − 0.4 mA − 0.3 mA −40 − 0.2 mA − 0.1 mA 0 0 −2 −4 −6 −8 −10 −12 Collector-emitter voltage VCE (V) −10 hFE IC IC / IB = 10 −1 Ta = 75°C −0.1 25°C −25°C −0.01 −0.001 −1 500 Forward current transfer ratio hFE Ta = 25°C −200 Collector current IC (mA) VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) IC VCE −240 −10 −100 Collector current IC (mA) SJH00006CED −1 000 VCE = −10 V 400 300 Ta = 75°C 200 25°C −25°C 100 0 −1 −10 −100 −1 000 Collector current IC (mA) 13 UNR211x Series IO VIN VIN IO −104 8 6 4 VO = −5 V Ta = 25°C −103 −100 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 10 −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 −0.1 2 0 −0.1 −1 −10 −1 −0.4 −100 Collector-base voltage VCB (V) −0.6 −0.8 −1.0 −1.2 −1.4 −0.01 −0.1 −1 −10 −100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR211N VCE(sat) IC IB = −1.0 mA −150 − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA −100 − 0.5 mA − 0.4 mA −50 − 0.3 mA − 0.2 mA − 0.1 mA 0 −2 0 −4 −6 −8 −10 −12 −10 IC / IB = 10 −1 25°C −10 0 –1 −1 000 Collector current IC (mA) −104 4 3 2 –10 –100 –1 000 Collector current IC (mA) VIN IO VO = −5 V Ta = 25°C −100 VO = − 0.2 V Ta = 25°C −10 −103 Input voltage VIN (V) Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob −100 50 IO VIN −102 −1 −0.1 –10 1 0 –1 –10 –100 Collector-base voltage VCB (V) 14 100 −25°C Cob VCB 5 25°C −25°C 150 Ta = 75°C −0.1 Ta = 75°C 200 −0.01 −1 f = 1 MHz IE = 0 Ta = 25°C VCE = −10 V 250 Collector-emitter voltage VCE (V) 6 hFE IC 300 Forward current transfer ratio hFE Collector current IC (mA) Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) IC VCE −200 –1 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 Input voltage VIN (V) SJH00006CED −1.6 −0.01 −0.1 −1 −10 Output current IO (mA) −100 UNR211x Series Characteristics charts of UNR211T VCE(sat) IC Collector current IC (mA) −150 IB = −1.0 mA –0.9 mA –0.8 mA –0.7 mA –0.6 mA –0.5 mA −100 − 0.4 mA −50 − 0.3 mA − 0.2 mA − 0.1 mA 0 −2 0 −4 −6 −8 −10 −10 Ta = 75°C − 0.01 −1 −10 −100 VCE = −10 V 250 Ta = 75°C 200 25°C 150 −25°C 100 50 0 −1 −1 000 −10 −100 −1 000 Collector current IC (mA) Collector current IC (mA) IO VIN VIN IO VO = −5 V Ta = 25°C −103 −100 Input voltage VIN (V) Output current IO (µA) 25°C −25°C Collector-emitter voltage VCE (V) −104 IC / IB = 10 −1 − 0.1 −12 hFE IC 300 Forward current transfer ratio hFE Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) IC VCE −200 −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 −1 − 0.4 − 0.6 − 0.8 −1 −1.2 −1.4 − 0.01 − 0.1 −1 −10 −100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR211V − 0.9 mA − 0.8 mA −8 − 0.7 mA − 0.6 mA −6 − 0.5 mA −4 − 0.4 mA − 0.3 mA −2 0 − 0.2 mA − 0.1 mA 0 −2 −4 −6 −8 −10 −12 Collector-emitter voltage VCE (V) −10 hFE IC IC / IB = 10 −1 Ta = 75°C 25°C −0.1 −0.01 −1 12 Forward current transfer ratio hFE Ta = 25°C IB = −1.0 mA −10 Collector current IC (mA) VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) IC VCE −12 −25°C −10 −100 Collector current IC (mA) SJH00006CED −1 000 10 VCE = −10 V Ta = 75°C 25°C 8 6 −25°C 4 2 0 –1 –10 –1 00 Collector current IC (mA) 15 UNR211x Series IO VIN VIN IO −100 VO = −5 V Ta = 25°C VO = − 0.2 V Ta = 25°C −10 −103 Input voltage VIN (V) Output current IO (µA) −104 −102 −1 −0.1 −10 −1 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −0.01 −0.1 −1 −10 −100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR211Z VCE(sat) IC Collector current IC (mA) −150 IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA −100 − 0.4 mA −50 − 0.3 mA − 0.2 mA 0 − 0.1 mA 0 −2 −4 −6 −8 −10 −12 −10 IC / IB = 10 −1 Ta = 75°C − 0.1 25°C −25°C − 0.01 −1 Collector-emitter voltage VCE (V) −10 3 2 −25°C 100 50 −10 −100 −1 000 Collector current IC (mA) VIN IO VO = –5 V Ta = 25°C −103 −100 Input voltage VIN (V) Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 4 −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 −1 −10 −100 Collector-base voltage VCB (V) 16 25°C 150 0 −1 −1 000 Ta = 75°C 200 IO VIN −104 f = 1 MHz IE = 0 Ta = 25°C 5 −100 VCE = −10 V 250 Collector current IC (mA) Cob VCB 6 hFE IC 300 Forward current transfer ratio hFE Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) IC VCE −200 –1 − 0.4 − 0.6 − 0.8 −1 −1.2 Input voltage VIN (V) SJH00006CED −1.4 − 0.01 − 0.1 −1 −10 Output current IO (mA) −100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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