PIN Photodiodes PNZ335 (PN335) PIN Photodiode Unit : mm Features 4.5±0.15 3.5±0.15 3.9±0.25 Flat side-view type package Not soldered 0.8 max. 1.5±0.2 For optical fiber (2.95) High coupling capability suitable for plastic fiber 2.1±0.15 1.6±0.15 0.8±0.1 High quantum efficiency 12.8 min. High-speed response 2-1.2±0.3 2-0.45±0.15 1 2 2.54±0.2 0.45±0.15 Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit VR 30 V Reverse voltage (DC) Power dissipation PD 100 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C 1: Anode 2: Cathode Dimensions of detection area Unit : mm 1.0 0.86 Active region A1 ø0.1 Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol ID VR = 10V Photo current IL VR = 10V, L = 1000 lx*1 λP VR = 10V Peak sensitivity wavelength *2 min 5 typ max 0.1 10 Unit nA 8 µA 850 nm 2 ns tr, tf*2 VR = 10V, RL = 50Ω Capacitance between pins Ct VR = 10V, f = 1MHz 6 pF Acceptance half angle θ Measured from the optical axis to the half power point 70 deg. Response time *1 Conditions Dark current Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit Sig.IN VR = 10V (Input pulse) λP = 800nm Sig.OUT ;;;; ;;;; (Output pulse) 50Ω 90% 10% RL td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) Note) The part number in the parenthesis shows conventional part number. 1 PNZ335 PIN Photodiodes ID — Ta IL — VR IL — L 10 2 16 10 3 VR = 10V Ta = 25˚C 14 1 10 ID (nA) 12 L = 1000 lx Dark current IL (µA) 10 Photo current Photo current IL (µA) 10 10 2 8 6 L = 500 lx 1 10 –1 4 10 –2 10 –1 2 10 –2 1 10 2 10 10 3 0 10 4 0 10 IL — Ta 40 100 Relative sensitivity 12 8 4 20 40 60 80 tr , tf (ns) 60 40 Directivity characteristics 10˚ 20 800 1000 60˚ 70˚ 80˚ 10 –1 1 10 External load resistance RL (kΩ) Coupling loss characteristics 0 X,Y = 0mm 50˚ 90˚ Z = 0mm 1 2 3 4 5 Fiber Y Z ø1mm X 0 0.4 0.8 1.2 Distance Z (mm) 2 1 10 –1 10 –2 1200 0 Coupling loss LZ (dB) 40 Relative sensitivity S (%) 60 100 10 Coupling loss characteristics 30˚ 40˚ 100 80 20˚ 600 Coupling loss LX , LY (dB) 0˚ 80 10 2 Wavelength λ (nm) Ambient temperature Ta (˚C ) 60 VR = 10V Ta = 25˚C 80 400 40 tr , tf — RL VR = 10V Ta = 25˚C 0 200 100 20 10 3 20 0 0 Ambient temperature Ta (˚C ) Rise time, Fall time S (%) 16 0 – 40 – 20 10 –3 – 40 – 20 50 Spectral sensitivity characteristics 20 IL (µA) 30 Reverse voltage VR (V) Illuminance L (lx) Photo current 20 1.6 1 Z = 0.3mm 2 3 4 5 – 0.8 Fiber Y X – 0.4 0 Z ø1mm 0.4 Distance X, Y (mm) 0.8 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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