Data Sheet

NUP1301
Ultra low capacitance ESD protection array
Rev. 01 — 11 May 2009
Product data sheet
1. Product profile
1.1 General description
Ultra low capacitance ElectroStatic Discharge (ESD) protection array in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to
protect one signal line in rail-to-rail configuration from the damage caused by ESD
and other transients.
1.2 Features
n
n
n
n
n
n
n
ESD protection of one signal line (rail-to-rail configuration)
Ultra low diode capacitance: Cd = 0.6 pF
Very low reverse leakage current: ≤ 30 nA
ESD protection up to 30 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); IPP = 11 A at tp = 8/20 µs
AEC-Q101 qualified
1.3 Applications
n
n
n
n
n
n
n
Telecommunication networks
Video line protection
Microcontroller protection
I2C-bus protection
Antenna power supply
Analog audio
Class-D amplifier
1.4 Quick reference data
Table 1.
Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
-
-
80
V
Per diode
VRRM
repetitive peak reverse
voltage
Cd
diode capacitance
f = 1 MHz;
VR = 0 V
-
0.6
0.75
pF
IR
reverse current
VR = 80 V
-
-
100
nA
NUP1301
NXP Semiconductors
Ultra low capacitance ESD protection array
2. Pinning information
Table 2.
Pinning
Pin
Symbol Description
1
GND
ground
2
VCC
supply voltage
3
I/O
input/output
Simplified outline
Graphic symbol
3
1
3
2
1
2
006aaa763
3. Ordering information
Table 3.
Ordering information
Type number
NUP1301
Package
Name
Description
Version
-
plastic surface-mounted package; 3 leads
SOT23
4. Marking
Table 4.
Marking
Type number
Marking code[1]
NUP1301
LJ*
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
-
80
V
-
80
V
-
215
mA
-
500
mA
Per diode
VRRM
repetitive peak reverse
voltage
VR
reverse voltage
IF
forward current
IFRM
repetitive peak forward
current
[1]
tp ≤ 1 ms; δ ≤ 0.25
NUP1301_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 11 May 2009
2 of 13
NUP1301
NXP Semiconductors
Ultra low capacitance ESD protection array
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
IFSM
Parameter
Conditions
non-repetitive peak
forward current
Min
Max
Unit
tp = 1 µs
-
4
A
tp = 1 ms
-
1
A
tp = 1 s
-
0.5
A
square wave
[2]
Per device
peak pulse power
tp = 8/20 µs
[3][4]
-
220
W
IPP
peak pulse current
tp = 8/20 µs
[3][4]
-
11
A
Ptot
total power dissipation
Tamb ≤ 25 °C
[5][6]
-
250
mW
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−55
+150
°C
Tstg
storage temperature
−65
+150
°C
PPP
[1]
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
[2]
Tj = 25 °C prior to surge.
[3]
Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[4]
Measured from pin 3 to pins 1 and 2 (pins 1 and 2 are connected).
[5]
Single diode loaded.
[6]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Table 6.
ESD maximum ratings
Symbol
Parameter
Conditions
VESD
electrostatic discharge
voltage
IEC 61000-4-2
(contact discharge)
Min
Max
Unit
-
30
kV
machine model
-
400
V
MIL-STD-883
(human body model)
-
10
kV
[1]
Device stressed with ten non-repetitive ESD pulses.
[2]
Measured from pin 3 to pins 1 and 2 (pins 1 and 2 are connected).
Table 7.
ESD standards compliance
Standard
Conditions
IEC 61000-4-2; level 4 (ESD)
> 15 kV (air); > 8 kV (contact)
MIL-STD-883; class 3B (human body model)
> 8 kV
NUP1301_1
Product data sheet
[1][2]
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 11 May 2009
3 of 13
NUP1301
NXP Semiconductors
Ultra low capacitance ESD protection array
001aaa631
IPP
001aaa630
120
100 %
90 %
100 % IPP; 8 µs
IPP
(%)
80
e−t
50 % IPP; 20 µs
40
10 %
0
10
20
30
30 ns
40
t (µs)
Fig 1.
t
tr = 0.7 ns to 1 ns
0
60 ns
8/20 µs pulse waveform according to
IEC 61000-4-5
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
6. Thermal characteristics
Table 8.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance from
junction to ambient
in free air
Rth(j-sp)
thermal resistance from
junction to solder point
Min
Typ
Max
Unit
-
-
500
K/W
-
-
360
K/W
Per device
[1]
Single diode loaded.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
NUP1301_1
Product data sheet
[1][2]
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 11 May 2009
4 of 13
NUP1301
NXP Semiconductors
Ultra low capacitance ESD protection array
7. Characteristics
Table 9.
Electrical characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VBR
breakdown voltage
IR = 100 µA
VF
forward voltage
100
-
-
V
IF = 1 mA
-
-
715
mV
IF = 10 mA
-
-
855
mV
IF = 50 mA
-
-
1
V
IF = 150 mA
-
-
1.25
V
VR = 25 V
-
-
30
nA
VR = 80 V
-
-
100
nA
VR = 25 V;
Tj = 150 °C
-
-
25
µA
VR = 80 V;
Tj = 150 °C
-
-
35
µA
diode capacitance
f = 1 MHz; VR = 0 V
-
0.6
0.75
pF
clamping voltage
IPP = 1 A
[2][3]
-
-
3
V
IPP = 11 A
[2][3]
-
-
20
V
Per diode
[1]
reverse current
IR
Cd
Per device
VCL
[1]
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
[2]
Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[3]
Measured from pin 3 to pins 1 and 2 (pins 1 and 2 are connected).
NUP1301_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 11 May 2009
5 of 13
NUP1301
NXP Semiconductors
Ultra low capacitance ESD protection array
006aab132
103
mbg704
102
IF
(mA)
IFSM
(A)
102
10
10
1
(1)
(2)
(3)
(4)
1
10−1
10−1
0
0.2
0.4
0.6
0.8
1.0
1
1.2
1.4
VF (V)
10
102
103
104
tp (µs)
(1) Tamb = 150 °C
Based on square wave currents.
(2) Tamb = 85 °C
Tj = 25 °C; prior to surge
(3) Tamb = 25 °C
(4) Tamb = −40 °C
Fig 3.
Forward current as a function of forward
voltage; typical values
Fig 4.
006aab133
102
IR
(µA)
10
(1)
1
(2)
Non-repetitive peak forward current as a
function of pulse duration; typical values
mbg446
0.8
Cd
(pF)
0.6
10−1
0.4
(3)
10−2
10−3
0.2
10−4
(4)
10−5
0
0
20
40
60
80
0
100
4
8
VR (V)
(1) Tamb = 150 °C
12
VR (V)
16
Tamb = 25 °C; f = 1 MHz
(2) Tamb = 85 °C
(3) Tamb = 25 °C
(4) Tamb = −40 °C
Fig 5.
Reverse current as a function of reverse
voltage; typical values
Fig 6.
Diode capacitance as a function of reverse
voltage; typical values
NUP1301_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 11 May 2009
6 of 13
NUP1301
NXP Semiconductors
Ultra low capacitance ESD protection array
ESD TESTER
acc. to IEC 61000-4-2
CZ = 150 pF; RZ = 330 Ω
4 GHz DIGITAL
OSCILLOSCOPE
450 Ω
RZ
RG 223/U
50 Ω coax
10×
ATTENUATOR
50 Ω
CZ
DUT
(DEVICE
UNDER
TEST)
vertical scale = 10 V/div
horizontal scale = 15 ns/div
vertical scale = 10 A/div
horizontal scale = 15 ns/div
GND
GND
clamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network), pin 3 to 1 and 2
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
vertical scale = 10 V/div
horizontal scale = 15 ns/div
vertical scale = 10 A/div
horizontal scale = 15 ns/div
GND
GND
clamped −8 kV ESD pulse waveform
(IEC 61000-4-2 network), pin 3 to 1 and 2
unclamped −8 kV ESD pulse waveform
(IEC 61000-4-2 network)
Fig 7.
006aab567
ESD clamping test setup and waveforms
NUP1301_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 11 May 2009
7 of 13
NUP1301
NXP Semiconductors
Ultra low capacitance ESD protection array
8. Application information
Protection of a single (high-speed) data line in rail-to-rail configuration. The protected data
line is connected to pin 3. Pin 1 is connected to ground (GND) and pin 2 is connected to
the supply rail (supply voltage VCC.) When the transient voltage exceeds the forward
voltage drop of one diode, the transient is directed either to the supply rail or to GND.
The advantages of these solutions are: low line capacitance (0.6 pF typically), fast
response time, and low clamping voltage.
VCC
VCC
D1
NUP1301
Audio
interface
D2
NUP1301
006aab568
Fig 8.
Typical application for the protection of one signal line
Circuit board layout and protection device placement:
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the NUP1301 as close to the input terminal or connector as possible.
2. The path length between the NUP1301 and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
9. Test information
9.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
NUP1301_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 11 May 2009
8 of 13
NUP1301
NXP Semiconductors
Ultra low capacitance ESD protection array
10. Package outline
3.0
2.8
1.1
0.9
3
0.45
0.15
2.5 1.4
2.1 1.2
1
2
1.9
0.48
0.38
Dimensions in mm
Fig 9.
0.15
0.09
04-11-04
Package outline SOT23 (TO-236AB)
11. Packing information
Table 10. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
NUP1301
[1]
Package
SOT23
Description
4 mm pitch, 8 mm tape and reel
3000
10000
-215
-235
For further information and the availability of packing methods, see Section 15.
NUP1301_1
Product data sheet
Packing quantity
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 11 May 2009
9 of 13
NUP1301
NXP Semiconductors
Ultra low capacitance ESD protection array
12. Soldering
3.3
2.9
1.9
solder lands
solder resist
3
2
1.7
solder paste
0.6
(3×)
0.7
(3×)
occupied area
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
Fig 10. Reflow soldering footprint SOT23 (TO-236AB)
2.2
1.2
(2×)
1.4
(2×)
solder lands
4.6
solder resist
2.6
occupied area
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig 11. Wave soldering footprint SOT23 (TO-236AB)
NUP1301_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 11 May 2009
10 of 13
NUP1301
NXP Semiconductors
Ultra low capacitance ESD protection array
13. Revision history
Table 11.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
NUP1301_1
20090511
Product data sheet
-
-
NUP1301_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 11 May 2009
11 of 13
NUP1301
NXP Semiconductors
Ultra low capacitance ESD protection array
14. Legal information
14.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
14.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
14.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
14.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
15. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
NUP1301_1
Product data sheet
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Rev. 01 — 11 May 2009
12 of 13
NUP1301
NXP Semiconductors
Ultra low capacitance ESD protection array
16. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
10
11
12
13
14
14.1
14.2
14.3
14.4
15
16
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Application information. . . . . . . . . . . . . . . . . . . 8
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8
Quality information . . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packing information. . . . . . . . . . . . . . . . . . . . . . 9
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 11 May 2009
Document identifier: NUP1301_1
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