Data Sheet

PESDxU1UT series
Ultra low capacitance ESD protection diode in SOT23 package
Rev. 02 — 20 August 2009
Product data sheet
1. Product profile
1.1 General description
Ultra low capacitance ElectroStatic Discharge (ESD) protection diode in a SOT23
(TO-236AB) small SMD plastic package designed to protect one high-speed data line
from the damage caused by ESD and other transients.
1.2 Features
n
n
n
n
Unidirectional ESD protection of one line
Ultra low diode capacitance: Cd = 0.6 pF
Max. peak pulse power: PPP up to 200 W
Low clamping voltage
n ESD protection > 23 kV
n IEC 61000-4-2; level 4 (ESD)
n IEC 61000-4-5; (surge)
1.3 Applications
n 10/100/1000 Ethernet
n FireWire
n Communication systems
n Local Area Network (LAN) equipment
n Computers and peripherals
n High-speed data lines
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
VRWM
reverse stand-off voltage
Conditions
Min
Typ
Max
Unit
PESD3V3U1UT
-
-
3.3
V
PESD5V0U1UT
-
-
5.0
V
PESD12VU1UT
-
-
12
V
PESD15VU1UT
-
-
15
V
PESD24VU1UT
Cd
[1]
diode capacitance
Measured from pin 1 to 2
f = 1 MHz; VR = 0 V
[1]
-
-
24
V
-
0.6
1.5
pF
PESDxU1UT series
NXP Semiconductors
Ultra low capacitance ESD protection diode in SOT23 package
2. Pinning information
Table 2.
Pinning
Pin
Description
Simplified outline
1
cathode ESD protection diode
2
cathode compensation diode
3
common anode
Symbol
3
1
3
2
1
2
006aaa441
3. Ordering information
Table 3.
Ordering information
Type number
PESD3V3U1UT
Package
Name
Description
Version
-
plastic surface mounted package; 3 leads
SOT23
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
4. Marking
Table 4.
Marking codes
Type number
Marking code[1]
PESD3V3U1UT
*AP
PESD5V0U1UT
*AQ
PESD12VU1UT
*AR
PESD15VU1UT
*AS
PESD24VU1UT
*AT
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PESDXU1UT_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 20 August 2009
2 of 13
PESDxU1UT series
NXP Semiconductors
Ultra low capacitance ESD protection diode in SOT23 package
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Min
Max
Unit
PESD3V3U1UT
-
80
W
PESD5V0U1UT
-
80
W
PESD12VU1UT
-
200
W
PESD15VU1UT
-
200
W
-
200
W
PESD3V3U1UT
-
5
A
PESD5V0U1UT
-
5
A
PESD12VU1UT
-
5
A
PESD15VU1UT
-
5
A
PESD24VU1UT
-
3
A
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
PPP
Parameter
Conditions
peak pulse power
8/20 µs
[1]
PESD24VU1UT
peak pulse current
IPP
[1]
8/20 µs
Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
PESDXU1UT_SER_2
Product data sheet
[1]
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 20 August 2009
3 of 13
PESDxU1UT series
NXP Semiconductors
Ultra low capacitance ESD protection diode in SOT23 package
Table 6.
ESD maximum ratings
Symbol
Parameter
Conditions
Min
Max
Unit
PESD3V3U1UT
-
30
kV
PESD5V0U1UT
-
30
kV
PESD12VU1UT
-
30
kV
PESD15VU1UT
-
30
kV
PESD24VU1UT
-
23
kV
-
10
kV
electrostatic discharge voltage
VESD
PESDxU1UT
IEC 61000-4-2
(contact discharge)
HBM MIL-STD-883
[1]
Device stressed with ten non-repetitive ESD pulses.
[2]
Measured from pin 1 to 2
Table 7.
[1][2]
ESD standards compliance
Standard
Conditions
IEC 61000-4-2; level 4 (ESD)
> 15 kV (air); > 8 kV (contact)
HBM MIL-STD-883; class 3
> 4 kV
001aaa631
IPP
001aaa630
120
100 %
90 %
100 % IPP; 8 µs
IPP
(%)
80
e−t
50 % IPP; 20 µs
40
10 %
0
10
20
30
30 ns
40
t (µs)
Fig 1.
t
tr = 0.7 ns to 1 ns
0
60 ns
8/20 µs pulse waveform according to
IEC 61000-4-5
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
PESDXU1UT_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 20 August 2009
4 of 13
PESDxU1UT series
NXP Semiconductors
Ultra low capacitance ESD protection diode in SOT23 package
6. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified
Symbol
Parameter
VRWM
reverse stand-off voltage
Conditions
Min
Typ
Max
Unit
PESD3V3U1UT
-
-
3.3
V
PESD5V0U1UT
-
-
5.0
V
PESD12VU1UT
-
-
12
V
PESD15VU1UT
-
-
15
V
PESD24VU1UT
-
-
24
V
reverse leakage current
IRM
PESD3V3U1UT
VRWM = 3.3 V
-
0.25
2
µA
PESD5V0U1UT
VRWM = 5.0 V
-
0.03
1
µA
PESD12VU1UT
VRWM = 12 V
-
<1
50
nA
PESD15VU1UT
VRWM = 15 V
-
<1
50
nA
PESD24VU1UT
VRWM = 24 V
-
<1
50
nA
PESD3V3U1UT
5.8
6.4
6.9
V
PESD5V0U1UT
7.0
7.6
8.2
V
PESD12VU1UT
14.2
15.0
16.7
V
PESD15VU1UT
17.1
18.9
20.3
V
breakdown voltage
VBR
[2]
IR = 5 mA
PESD24VU1UT
25.4
27.8
30.3
V
-
0.6
1.5
pF
IPP = 1 A
-
-
9
V
IPP = 5 A
-
-
20
V
IPP = 1 A
-
-
12
V
IPP = 5 A
-
-
21
V
IPP = 1 A
-
-
23
V
IPP = 5 A
-
-
39
V
IPP = 1 A
-
-
28
V
IPP = 5 A
-
-
53
V
IPP = 1 A
-
-
40
V
IPP = 3 A
-
-
76
V
PESD3V3U1UT
-
-
400
Ω
PESD5V0U1UT
-
-
80
Ω
PESD12VU1UT
-
-
200
Ω
PESD15VU1UT
-
-
225
Ω
PESD24VU1UT
-
-
300
Ω
Cd
diode capacitance
VCL
clamping voltage
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
differential resistance
rdif
[2]
f = 1 MHz; VR = 0 V
[1][2]
IR = 1 mA
[1]
Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2]
Measured from pin 1 to 2
PESDXU1UT_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 20 August 2009
5 of 13
PESDxU1UT series
NXP Semiconductors
Ultra low capacitance ESD protection diode in SOT23 package
I
006aaa442
10
IR
IR(25˚C)
−VCL −VBR −VRWM
V
−
−IRM
−IR
1
−IPP
10−1
−100
+
P-N
−50
0
50
100
150
Tj (°C)
006aaa407
PESD3V3U1UT; PESD5V0U1UT
IR is less than 10 nA at 150 °C for:
PESD12VU1UT; PESD15VU1UT; PESD24VU1UT
Fig 3.
V-I characteristics
Fig 4.
Relative variation of reverse leakage current
as a function of junction temperature; typical
values
PESDXU1UT_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 20 August 2009
6 of 13
PESDxU1UT series
NXP Semiconductors
Ultra low capacitance ESD protection diode in SOT23 package
7. Application information
The PESDxU1UT series is designed for protection of high-speed datalines from damage
caused by ESD and surge pulses. PESDxU1UT devices combine an ESD protection
diode and an ultra low capacitance compensation diode to ensure an effective device
capacitance as low as 0.6 pF. The PESDxU1UT series provides a surge capability of up to
200 W per line for an 8/20 µs waveform.
protected data line
n.c.
2
1
1
2
3
3
n.c.
ground
PESDxU1UT
PESDxU1UT
006aaa443
Two PESDxU1UT devices in anti-parallel configuration provide ESD protection in a common-mode
application.
The two PESDxU1UT devices should be connected as follows:
protected data line is connected to
device 1 / pin 2
device 2 / pin 1
Ground is connected to
device 1 / pin 1
device 2 / pin 2
pin 3 is not connected for both devices
Fig 5.
Bidirectional ESD protection of one line, common mode
I/O 1
ETHERNET
TRANSCEIVER
n.c.
2
1
1
2
3
3
n.c.
I/O 2
PESDxU1UT
PESDxU1UT
006aaa444
Two PESDxU1UT devices in anti-parallel configuration provide ESD protection in a
differential-mode configuration as e.g. for Ethernet applications.
The two PESDxU1UT should be connected as follows:
I/O line 1 is connected to
device 1 / pin 2
device 2 / pin 1
I/O line 2 is connected to
device 1 / pin 1
device 2 / pin 2
pin 3 is not connected for both devices
Fig 6.
Differential mode Ethernet protection
PESDXU1UT_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 20 August 2009
7 of 13
PESDxU1UT series
NXP Semiconductors
Ultra low capacitance ESD protection diode in SOT23 package
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the PESDxU1UT as close to the input terminal or connector as possible.
2. The path length between the PESDxU1UT and the protected line should be
minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all printed-circuit board conductive loops including power and ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer printed-circuit
boards, use ground vias.
PESDXU1UT_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 20 August 2009
8 of 13
PESDxU1UT series
NXP Semiconductors
Ultra low capacitance ESD protection diode in SOT23 package
8. Test information
ESD TESTER
RZ
450 Ω
4 GHz DIGITAL
OSCILLOSCOPE
RG 223/U
50 Ω coax
10×
ATTENUATOR
50 Ω
CZ
IEC 61000-4-2 network
CZ = 150 pF; RZ = 330 Ω
D.U.T.
(Device
Under
Test)
vertical scale = 20 V/div; horizontal scale = 50 ns/div
vertical scale = 200 V/div
horizontal scale = 50 ns/div
PESD24VU1UT
GND
PESD15VU1UT
GND
PESD12VU1UT
GND
PESD5V0U1UT
GND
GND
PESD3V3U1UT
GND
unclamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
clamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
GND
GND
vertical scale = 200 V/div
horizontal scale = 50 ns/div
unclamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)
Fig 7.
vertical scale = 20 V/div
horizontal scale = 50 ns/div
clamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)
006aaa445
ESD clamping test setup and waveforms
PESDXU1UT_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 20 August 2009
9 of 13
PESDxU1UT series
NXP Semiconductors
Ultra low capacitance ESD protection diode in SOT23 package
9. Package outline
3.0
2.8
1.1
0.9
3
0.45
0.15
2.5 1.4
2.1 1.2
1
2
1.9
0.48
0.38
0.15
0.09
Dimensions in mm
Fig 8.
04-11-04
Package outline SOT23 (TO-236AB)
10. Packing information
Table 9.
Packing methods
The -xxx numbers are the last three digits of the 12NC ordering code.[1]
Type number
PESD3V3U1UT
Package
SOT23
Description
4 mm pitch, 8 mm tape and reel
Packing quantity
3000
10000
-215
-235
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
[1]
For further information and the availability of packing methods, see Section 13.
PESDXU1UT_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 20 August 2009
10 of 13
PESDxU1UT series
NXP Semiconductors
Ultra low capacitance ESD protection diode in SOT23 package
11. Revision history
Table 10.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PESDXU1UT_SER_2
20090820
Product data sheet
-
PESDXU1UT_SER_1
Modifications:
PESDXU1UT_SER_1
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
20050511
Product data sheet
PESDXU1UT_SER_2
Product data sheet
-
-
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 20 August 2009
11 of 13
PESDxU1UT series
NXP Semiconductors
Ultra low capacitance ESD protection diode in SOT23 package
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PESDXU1UT_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 20 August 2009
12 of 13
PESDxU1UT series
NXP Semiconductors
Ultra low capacitance ESD protection diode in SOT23 package
14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Application information. . . . . . . . . . . . . . . . . . . 7
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Packing information. . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 20 August 2009
Document identifier: PESDXU1UT_SER_2
Similar pages