MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz Features Rev. V3 MAGX-000035-010000 (Flanged) GaN Depletion-Mode HEMT Microwave Transistor Common-Source configuration No internal matching Broadband Class AB operation RoHS* Compliant +50 V Typical Operation MTTF = 600 years Description The MAGX-000035-01000X is a gold-metalized unmatched Gallium Nitride (GaN) on Silicon Carbide RF power transistor suitable for a variety of RF power amplifier applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over multiple octave bandwidths for today’s demanding application needs. The MAGX-000035-01000X is constructed with either a flanged or flangeless ceramic package which provides excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions compared with older semiconductor technologies. Applications Ordering Information1,2 General purpose for pulsed or CW applications: Commercial Wireless Infrastructure (WCDMA, LTE, WIMAX) Civilian and Military Radar Military and Commercial Communications Public Radio Industrial, Scientific and Medical SATCOM Instrumentation Avionics MAGX-000035-01000S (Flangeless) Ordering Information Part Number Package MAGX-000035-010000 10 W GaN Power Transistor (Flanged) MAGX-000035-01000S 10 W GaN Power Transistor (Flangeless) MAGX-000035-SB2PPR 1.2-1.4 GHz Evaluation Board (Flanged) MAGX-000035-SB3PPR 1.2-1.4 GHz Evaluation Board (Flangeless) * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz Rev. V3 Absolute Maximum Ratings1, 2, 3 Parameter Limit Supply Voltage (VDD) Supply Voltage (VGG) Supply Current (IDD) Input Power (PIN) Junction/Channel Temp MTTF (TJ < 200 °C) Continuous Power Dissipation (PDISS) at 85 ºC +65 V -8 to 0 V 800 mA 25 dBm 200ºC 600 years 18 W 43 W 9.2 ºC/W 3.4 ºC/W Pulsed Power Dissipation (PAVG) at 85 ºC Thermal Resistance, (TJ = 200 ºC), CW Thermal Resistance, (TJ = 200 ºC), Pulsed 500 μs, 10% Duty cycle Operating Temp -40 to +95ºC Storage Temp ESD Min. - Charged Device Model (CDM) ESD Min. - Human Body Model (HBM) -65 to +150ºC 250 V 250 V 1. Exceeding any one or combination of these limits may cause permanent damage to this device 2. Junction temperature directly affects device MTTF. Junction temperature should be kept as low as possible to maximize lifetime. 3. For saturated performance it is recommended that the sum of (3*Vdd + abs(Vgg)) <175 V. DC Characteristics Parameter Test Conditions Drain-Source Leakage Current VGS = -8 V, VDS = 175 V Gate Threshold Voltage VDS = 5 V, ID = 2 mA Forward Transconductance VDS = 5 V, ID = 500 mA Symbol Min. Typ. Max. Units IDS - - 10.8 mA VGS (TH) -5 -3 -2 V GM 5.5 - - S Symbol Min. Typ. Max. Units DC Characteristics Parameter Test Conditions Input Capacitance VDS = 0 V, VGS = -8 V, F = 1 MHz CISS - 4.4 - pF Output Capacitance VDS = 50 V, VGS = -8 V, F = 1 MHz COSS - 1.9 - pF Reverse Transfer Capacitance VDS = 50 V, VGS = -8 V, F = 1 MHz CRSS - 0.2 - pF 2 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz Rev. V3 Electrical Specifications: TA = 25 ºC Parameter Test Conditions Symbol Min. Typ. Max. Units POUT 10 11 - W 18 19 dB 45 % RF FUNCTIONAL TESTS CW Output Power (P2dB) 1.3 GHz VDD = 50 V, IDQ = 25 mA, PIN = 0.3 W Power Gain (P2dB) 1.3 GHz VDD = 50 V, IDQ = 25 mA GP Drain Efficiency @ 1.3 GHz VDD = 50 V, IDQ = 25 mA, POUT = 10 W ηD Load Mismatch Stability VDD = 50 V, IDQ = 25 mA, PIN = 0.3 W VSWR-S 5:1 - - - Load Mismatch Tolerance VDD = 50 V, IDQ = 25 mA, PIN = 0.3 W VSWR-T 10:1 - - - Test Fixture Impedance Freq. (MHz) ZIN-OPT (Ω) ZOUT-OPT (Ω) 1300 3.6 + j6.9 38.3 + j20.5 3 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz Rev. V3 1.2—1.4 GHz Typical CW Performance Freq. (GHz) POUT (dBm) POUT (W) Gain (dB) ID (A) Eff. (%) VD (V) IDQ (mA) 1.20 40.0 10.0 17.5 0.49 41 50 25 1.30 40.0 10.0 18.4 0.40 44 - - 1.40 40.0 10.0 17.8 0.50 40 - - 3.3 GHz Typical CW Performance Freq. (GHz) P2dB (dBm) POUT (W) Gain (dB) ID (A) Eff. (%) VD (V) IDQ (mA) 3.30 40.3 10.7 16.2 0.38 57 50 25 1.2—1.4 GHz Test Fixture 4 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz Rev. V3 1.2—1.4 GHz Performance With Pulsed Signal VD = 50 V IDQ = 25 mA Pulse = 100 μs Duty = 15% 5 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz 1.2—1.4 GHz Matching Circuit For Rogers RT6010.2LM 6 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Rev. V3 MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz Outline Drawings MAGX-000035-010000 MAGX-000035-01000S 7 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Rev. V3 MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz Rev. V3 CORRECT DEVICE SEQUENCING TURNING THE DEVICE ON TURNING THE DEVICE OFF 1. Set VGS to the pinch-off (VP), typically -5 V. 2. Turn on VDS to nominal voltage (50 V). 3. Increase VGS until the IDS current is reached. 4. Apply RF power to desired level. 1. Turn the RF power off. 2. Decrease VGS down to VP. 3. Decrease VDS down to 0 V. 4. Turn off VGS. 8 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298