SUD50P04-08 Datasheet

SUD50P04-08
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Vishay Siliconix
P-Channel 40-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
-40
RDS(on) ()
ID (A)
0.0081 at VGS = -10 V
-50 d
0.0117 at VGS = -4.5 V
-48 d
Qg (TYP.)
60
• TrenchFET® power MOSFET
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
TO-252
TO
APPLICATIONS
Drain connected to tab
S
• Power switch
• Load switch in high current
applications
G
• DC/DC converters
S
D
G
D
Top View
P-Channel MOSFET
Ordering Information:
SUD50P04-08-GE3 (lead (Pb)-free and halogen-free)
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
-40
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
Pulsed Drain Current
IDM
Avalanche Current
Single Avalanche Energy a
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
ID
L = 0.1 mH
TC = 25 °C
TA = 25 °C c
V
-50 d
-50 d
-100
IAS
-46
EAS
106
PD
UNIT
73.5 b
2.5
A
mJ
W
TJ, Tstg
-55 to +150
°C
UNIT
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
Junction-to-Ambient (PCB Mount) c
RthJA
50
Junction-to-Case (Drain)
RthJC
1.7
°C/W
Notes
a. Duty cycle  1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
d. Package limited.
S14-2535-Rev. B, 29-Dec-14
Document Number: 65594
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD50P04-08
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Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
VDS
VGS = 0 V, ID = -250 μA
-40
-
-
VGS(th)
VDS = VGS, ID = -250 μA
-1
-
-2.5
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 250
VDS = -40 V, VGS = 0 V
-
-
-1
VDS = -40 V, VGS = 0 V, TJ = 125 °C
-
-
-50
VDS = -40 V, VGS = 0 V, TJ = 150 °C
-
-
-250
VDS  -10 V, VGS = -10 V
-50
-
-
A
VGS = -10 V, ID = -22 A
-
0.0067
0.0081
VGS = -4.5 V, ID = -19 A
-
0.0097
0.0117

VDS = -15 V, ID = -22 A
-
45
-
-
5380
-
-
570
-
-
500
-
-
106
159
-
60
90
VDS = -20 V, VGS = -4.5 V, ID = -20 A
-
22
-
-
27
-
f = 1 MHz
0.4
1.8
3.6
-
15
23
-
12
18
-
70
105
-
18
27
IS
-
-
-50
Pulsed Current
ISM
-
-
-100
Forward Voltage a
VSD
-
-0.8
-1.5
V
-
35
53
ns
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance a
IDSS
ID(on)
RDS(on)
gfs
V
nA
μA
S
Dynamic b
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge c
Qg
Gate-Source Charge c
Qgs
Gate-Drain Charge c
Qgd
Gate Resistance
Rg
c
td(on)
c
tr
Turn-Off Delay Time c
td(off)
Turn-On Delay Time
Rise Time
Fall Time c
VGS = 0 V, VDS = -20 V, f = 1 MHz
VDS = -20 V, VGS = -10 V, ID = -20 A
VDD = -20 V, RL = 2 
ID  -10 A, VGEN = -10 V, Rg = 1 
tf
pF
nC

ns
Drain-Source Body Diode Ratings and Characteristics (TC = 25 °C) b
Continuous Current
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IF = -10 A, VGS = 0 V
trr
IRM(REC)
Qrr
IF = -10 A, dI/dt = 100 A/μs
A
-
-2
-3
A
-
33
50
nC
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.



Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S14-2535-Rev. B, 29-Dec-14
Document Number: 65594
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD50P04-08
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.015
VGS = 10 V thru 5 V
I D - Drain Current (A)
R DS(on) - On-Resistance (Ω)
VGS = 4 V
80
60
40
20
0.012
VGS = 4.5 V
0.009
VGS = 10 V
0.006
VGS = 3 V
0
0.003
0.5
1.0
1.5
2.0
0
2.5
20
40
60
80
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
Output Characteristics
On-Resistance vs. Drain Current
10
0.030
8
0.024
R DS(on) - On-Resistance (Ω)
I D - Drain Current (A)
0.0
6
4
TC = 25 °C
100
0.018
TJ = 150 °C
0.012
TJ = 25 °C
0.006
2
TC = 125 °C
TC = - 55 °C
0
0
1
2
3
VGS - Gate-to-Source Voltage (V)
0.000
2
4
Transfer Characteristics
10
On-Resistance vs. Gate-to-Source Voltage
10
100
ID = 20 A
VGS - Gate-to-Source Voltage (V)
TC = - 55 °C
g fs - Transconductance (S)
4
6
8
VGS - Gate-to-Source Voltage (V)
75
TC = 25 °C
TC = 125 °C
50
25
8
VDS = 20 V
6
VDS = 10 V
VDS = 32 V
4
2
0
0
0
10
20
30
40
50
0
30
60
90
ID - Drain Current (A)
Qg - Total Gate Charge (nC)
Transconductance
Gate Charge
S14-2535-Rev. B, 29-Dec-14
120
Document Number: 65594
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD50P04-08
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
- 1.0
10
ID = 250 µA
VGS(th) (V)
I S - Source Current (A)
- 1.3
TJ = 150 °C
TJ = 25 °C
- 1.6
- 1.9
1
- 2.2
0.1
0.0
0.3
0.6
0.9
1.2
- 2.5
- 50
- 25
0
Source-Drain Diode Forward Voltage
50
75
100
125
150
100
125
150
Threshold Voltage
8000
VDS - Drain-to-Source Voltage (V)
- 43
6000
C - Capacitance (pF)
25
TJ - Temperature (°C)
VSD - Source-to-Drain Voltage (V)
Ciss
4000
2000
Coss
ID = 250 µA
- 45
- 47
- 49
Crss
0
0
10
20
30
- 51
- 50
40
- 25
VDS - Drain-to-Source Voltage (V)
Capacitance
25
50
75
Drain Source Breakdown vs. Junction Temperature
2.0
80
ID = 20 A
1.7
VGS = 10 V
I D - Drain Current (A)
R DS(on) - On-Resistance (Normalized)
0
TJ - Junction Temperature (°C)
1.4
VGS = 4.5 V
1.1
60
Package Limited
40
20
0.8
0.5
- 50
0
- 25
0
25
50
75
100
125
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
S14-2535-Rev. B, 29-Dec-14
150
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating
Document Number: 65594
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD50P04-08
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1000
100
Limited by RDS(on)*
100
TJ = 150 °C
I D - Drain Current (A)
I DAV (A)
100 µA
TJ = 25 °C
10
10
1 ms
10 ms, 100 ms
1 s, 10 s, DC
1
TC = 25 °C
Single Pulse
0.1
1
10-5
10-4
10-3
10-2
0.01
0.1
10-1
Time (s)
BVDSS
Limited
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Single Pulse Avalanche Current Capability vs. Time
Safe Operating Area
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
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Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65594.
S14-2535-Rev. B, 29-Dec-14
Document Number: 65594
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
TO-252AA Case Outline
E
MILLIMETERS
A
C2
e
b2
D1
e1
E1
L
gage plane height (0.5 mm)
L4
b
L5
H
D
L3
b3
C
A1
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
2.18
2.38
0.086
0.094
A1
-
0.127
-
0.005
b
0.64
0.88
0.025
0.035
b2
0.76
1.14
0.030
0.045
b3
4.95
5.46
0.195
0.215
0.024
C
0.46
0.61
0.018
C2
0.46
0.89
0.018
0.035
D
5.97
6.22
0.235
0.245
D1
4.10
-
0.161
-
E
6.35
6.73
0.250
0.265
E1
4.32
-
0.170
-
H
9.40
10.41
0.370
0.410
e
2.28 BSC
e1
0.090 BSC
4.56 BSC
0.180 BSC
L
1.40
1.78
0.055
0.070
L3
0.89
1.27
0.035
0.050
L4
-
1.02
-
0.040
L5
1.01
1.52
0.040
0.060
ECN: T16-0236-Rev. P, 16-May-16
DWG: 5347
Notes
• Dimension L3 is for reference only.
Revision: 16-May-16
Document Number: 71197
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
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APPLICATION NOTE
Document Number: 72594
Revision: 21-Jan-08
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Revision: 02-Oct-12
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Document Number: 91000