MAGX-000035-09000P GaN Wideband 90 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Functional Schematic Features Rev. V2 GaN on SiC D-Mode Transistor Technology Unmatched, Ideal for Pulsed Applications 50 V Typical Bias, Class AB Common-Source Configuration Thermally-Enhanced 3 x 6 mm 14-Lead DFN MTTF = 600 years (TJ < 200°C) Halogen-Free “Green” Mold Compound RoHS* Compliant and 260°C Reflow Compatible MSL-1 Description The MAGX-000035-09000P is a GaN on SiC unmatched power device offering the widest RF frequency capability, most reliable high voltage operation, lowest overall power transistor size, cost and weight in a “TRUE SMT”TM plastic-packaging technology. Use of an internal stress buffer technology allows reliable operation at junction temperatures up to 200°C. The small package size and excellent RF performance make it an ideal replacement for costly flanged or metal-backed module components. Ordering Information Pin Configuration2 Pin No. Function Pin No. Function 1 VGG/RFIN 8 VDD/RFOUT 2 VGG/RFIN 9 VDD/RFOUT 3 VGG/RFIN 10 VDD/RFOUT 4 No Connection 11 No Connection 5 VGG/RFIN 12 VDD/RFOUT 6 VGG/RFIN 13 VDD/RFOUT 7 VGG/RFIN 14 VDD/RFOUT 15 Paddle3 1 Part Number Package MAGX-000035-09000P Bulk Packaging MAGX-000035-PB3PPR Sample Board 1. Reference Application Note M513 for reel size information. 2. M/A-COM Technology Solutions recommends connecting unused package pins to ground. 3. The exposed pad centered on the package bottom must be connected to RF and DC ground. * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000035-09000P GaN Wideband 90 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V2 Typical Performance4: VDD = 50 V, IDQ = 200 mA, TA = 25°C Parameter 30 MHz 1 GHz 2.5 GHz 3.5 GHz Units Gain 25 21 15 13 dB Saturated Power (PSAT) 100 98 90 85 W Power Gain at PSAT 22 20 15 11 dB PAE @ PSAT 75 65 55 52 % 4. Typical RF performance measured in M/A-COM Technology Solutions RF evaluation boards. See recommended tuning solutions on pages 4 and 5. Electrical Specifications: Freq. = 1.6 GHz, TA = 25°C, VDD = +50 V, Z0 = 50 Ω Parameter Test Conditions Symbol Min. Typ. Max. Units CW Output Power (P2.5 dB) VDD = 28 V, IDQ = 200 mA POUT - 14 - W Pulsed Output Power (P2.5 dB) 100 µs and 10% Duty Cycle VDD = 50 V, IDQ = 200 mA POUT 75 95 - W Pulsed Power Gain (P2.5 dB) VDD = 50 V, IDQ = 200 mA GP 16 17.5 - dB Pulsed Drain Efficiency (P2.5 dB) VDD = 50 V, IDQ = 200 mA ηD 55 65 - % Load Mismatch Stability (P2.5 dB) VDD = 50 V, IDQ = 200 mA VSWR-S - 5:1 - - Load Mismatch Tolerance (P2.5 dB) VDD = 50 V, IDQ = 200 mA VSWR-T - 10:1 - - Test Conditions Symbol Min. Typ. Max. Units Drain-Source Leakage Current VGS = -8 V, VDS = 175 V IDS - - 6.0 mA Gate Threshold Voltage VDS = 5 V, ID = 6 mA VGS (th) -5 -3 -2 V Forward Transconductance VDS = 5 V, ID = 3000 mA GM 1.1 - - S Input Capacitance VDS = 0 V, VGS = -8 V, F = 1 MHz CISS - 22 - pF Output Capacitance VDS = 50 V, VGS = -8 V, F = 1 MHz COSS - 9.8 - pF Reverse Transfer Capacitance VDS = 50 V, VGS = -8 V, F = 1 MHz CRSS - 0.9 - pF RF FUNCTIONAL TESTS Electrical Characteristics: TA = 25°C Parameter DC CHARACTERISTICS DYNAMIC CHARACTERISTICS 2 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000035-09000P GaN Wideband 90 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V2 Absolute Maximum Ratings 5,6,7,8,9 Parameter Absolute Max. Input Power POUT - GP + 2.5 dBm Drain Supply Voltage, VDD +65 V Gate Supply Voltage, VGG -8 V to 0 V Supply Current, IDD 4500 mA Power Dissipation, CW @ 85ºC 27 W Power Dissipation (PAVG), Pulsed @ 85°C 85 W Junction Temperature10 200°C Operating Temperature -40°C to +95°C Storage Temperature -65°C to +150°C 5. 6. 7. 8. 9. Exceeding any one or combination of these limits may cause permanent damage to this device. M/A-COM Technology Solutions does not recommend sustained operation near these survivability limits. For saturated performance it is recommended that the sum of (3 * VDD + abs (VGG)) < 175 V. CW operation at VDD voltages above 28 V is not recommended. Operating at nominal conditions with TJ ≤ 200°C will ensure MTTF > 1 x 106 hours. Junction temperature directly affects device MTTF and should be kept as low as possible to maximize lifetime. 10. Junction Temperature (TJ) = TC + ӨJC * ((V * I) - (POUT - PIN)) Typical CW thermal resistance (ӨJC) = 5.69°C/W a) For TC = 79°C, TJ = 200°C @ 28 V, 1224 mA, POUT = 15 W, PIN = 0.25 W Typical transient thermal resistances: b) 300 µs pulse, 10% duty cycle, ӨJC = 0.96°C/W For TC = 79°C, TJ = 131°C @ 50 V, 2500 mA, POUT = 74 W, PIN = 2 W c) 1 ms pulse, 10% duty cycle, ӨJC = 1.38°C/W For TC = 80°C, TJ = 173°C @ 50 V, 2780 mA, POUT = 74 W, PIN = 2 W d) 1 ms pulse, 10% duty cycle, ӨJC = 1.35°C/W For TC = 80°C, TJ = 173°C @ 50 V, 3160 mA, POUT = 93 W, PIN = 4 W 3 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000035-09000P GaN Wideband 90 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V2 Evaluation Board Details and Recommended Tuning Solutions Parts measured on evaluation board (8-mils thick RO4003C). Electrical and thermal ground is provided using copper-filled via hole array (not pictured), and evaluation board is mounted to a metal plate. GND VD Matching is provided using lumped elements as shown at left. Recommended tuning solutions for 2 frequency ranges are detailed in the parts list below. RFIN RFOUT Bias Sequencing Turning the device ON 1. Set VG to the pinch-off (VP), typically -5 V. 2. Turn on VD to nominal voltage (50 V). 3. Increase VGS until the IDS current is reached. 4. Apply RF power to desired level. Turning the device OFF VG Parts List (N/A = not applicable for this tuning solution) 4 1. Turn the RF power off. 2. Decrease VG down to VP. 3. Decrease VD down to 0 V. 4. Turn off VG. Part Frequency = 1.2 - 1.4 GHz Frequency = 1.6 GHz C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 C11 C12 0505, 56 pF, ±5%, 250 V, ATC 0603, 4.7 pF, ±0.1 pF, 250 V, ATC 0603, 10 pF, ±5%, 250 V, ATC 0505, 15 pF, ±5%, 250 V, ATC N/A N/A 0805, 1000 pF, 100 V, 5%, AVX 0505, 56 pF, ±5%, 250 V, ATC 0505, 2.2 pF, ±0.1 pF, 250 V, ATC 0505, 1.0 pF, ±0.1 pF, 250 V, ATC 0505, 91 pF, ±5%, 250 V, ATC 0805, 1000 pF, 100 V, 5%, AVX 0505, 36 pF, ±5%, 250 V, ATC N/A N/A N/A 0505, 8.2 pF, ±0.1 pF, 250 V, ATC 0505, 100 pF, ±10%, 200 V, ATC 0805, 1000 pF, 100 V, 5%, AVX 0505, 36 pF, ±5%, 250 V, ATC 0505, 3.0 pF, ±0.1 pF, 250 V, ATC N/A 0505, 36 pF, ±5%, 250 V, ATC 0805, 1000 pF, 100 V, 5%, AVX C13 1210, 1 µF, 100 V, 20%, ATC 1210, 1 µF, 100 V, 20%, ATC R1 R2 R3 L1 L2 L3 L4 L5 12 Ω, 0805, 5% 1.0 Ω, 0603, 5% 0.33 Ω, 0603, 5% 0603 CS, 1.6 nH (1.8 nH) 0402 HP, 2.7 nH 0402 HP, 2.7 nH 0402 PA, 1.9 nH (0402 HP, 2.0 nH) 0402 PA, 1.9 nH (0402 HP, 2.0 nH) 12 Ω, 0805, 5% 1.0 Ω, 0603, 5% 1.0 Ω, 0603, 5% N/A N/A N/A N/A N/A M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000035-09000P GaN Wideband 90 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V2 Evaluation Board Details and Recommended Tuning Solutions GND VD Parts measured on evaluation board (8-mils thick RO4003C). Electrical and thermal ground is provided using copper-filled via hole array (not pictured), and evaluation board is mounted to a metal plate. Matching is provided using lumped elements as shown at left. Recommended tuning solutions for 1 frequency range is detailed in the parts list below. RFIN RFOUT Bias Sequencing Turning the device ON 1. Set VG to the pinch-off (VP), typically -5 V. 2. Turn on VD to nominal voltage (50 V). 3. Increase VGS until the IDS current is reached. 4. Apply RF power to desired level. Turning the device OFF 1. Turn the RF power off. 2. Decrease VG down to VP. 3. Decrease VD down to 0 V. 4. Turn off VG. VG Parts List (N/A = not applicable for this tuning solution) 5 Part Qty. Frequency = 2.7 - 3.1 GHz C1 1 0402 18 pF, ±5%, 200 V, ATC C2 1 0402, 1.2 pF, ±0.1 pF, 200 V, ATC C3 2 0402, 2.0 pF, ±0.1 pF, 200 V, ATC C4 2 0402, 2.7 pF, ±0.1 pF, 200 V, ATC C5 2 0603, 10 pF, ±5%, 250 V, ATC C6 4 0805, 1000 pF, 100 V, 5%, AVX C7 2 0603, 8.2 pF, ±5%, 250 V, ATC C8 4 0505, 1.4 pF, ±0.1 pF, 250 V, ATC C9 1 0505, 18 pF, ±5%, 250 V, ATC C10 2 1210, 1 µF, 100 V, 20%, ATC C12 1 0603, 0.6 pF, ±0.1 pF, 250 V, ATC R1 1 200 Ω, 0603, 5% R2 2 1.0 Ω, 0603, 5% R3 1 27 Ω, 0805, 5% R4 1 160 Ω, 0603, 5% R5 2 9.1 Ω, 0603, 5% M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000035-09000P GaN Wideband 90 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V2 Lead-Free 3x6 mm 14-Lead DFN† † Reference Application Note S2083 for lead-free solder reflow recommendations. Meets JEDEC moisture sensitivity level 1 requirements. Plating is Ni/Pd/Au. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Nitride Devices and Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these Class 1B devices. 6 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000035-09000P GaN Wideband 90 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V2 Applications Section S-Parameter Data: TA = 25°C, VDD = +50 V, IDQ = 200 mA MAGX00035_09000P_50 0. 4 0 4. S(1,1) 5.0 MAGX00035_09000P_50 10.0 5.0 2.0 1.0 0.8 0.6 0.4 0 1.308 GHz r 0.109445 x -0.165303 10.0 S(2,2) MAGX00035_09000P_50 -10.0 0.2 2.719 GHz r 0.0382451 x -0.0244909 4.0 0.2 2 -0. 4 .0 -5. 0 -3 .0 1.317 GHz r 0.0187621 x -0.0190197 0 3. 3.495 GHz r 0.0271106 x 0.0203957 3.0 3.498 GHz r 0.0100016 x 0.102801 2.744 GHz r 0.0122033 x 0.065709 2. 0 0. 6 0.8 1.0 Swp Max 6GHz Swp Min 0.03GHz -1.0 -0.8 -0 .6 .0 -2 .4 -0 Spar Graph 40 1.973 GHz 21.76 dB 30 20 10 0 2.714 GHz 15.49 dB 3.504 GHz 14.5 dB DB(|S(2,1)|) MAGX00035_09000P_50 DB(GMax()) MAGX00035_09000P_50 -10 DB(MSG()) MAGX00035_09000P_50 -20 0.03 2.03 4.03 6 Frequency (GHz) 7 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000035-09000P GaN Wideband 90 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V2 Applications Section Thermal Performance: Freq. = 1.6 GHz, TC = 85°C, VDD = +50 V, IDQ = 100 mA, Z0 = 50 Ω Power (Output & Dissipated) vs. Transient Junction Temperature, Pulse Duration and Duty Cycle 100 190 Power Dissipation 1.6 GHz Power Output 90 170 80 150 70 130 Max .Transient Junction Temp. 60 110 50 90 Pulse Width (µs), Duty Cycle (%) Pulse Width, Duty Cycle 100 µs, 10% 100 µs, 20% 300 µs, 10% 300 µs, 20% 500 µs, 10% 500 µs, 20% 1000 µs, 10% 1000 µs, 20% 8000 µs, 9.2% Power Dissipation (W) 55 55.4 54 55.9 54.3 56.2 53.5 57 58.2 1.6 GHz POUT (W) 74.5 71.6 74 71.1 73.2 70.8 73.5 70 68.8 Max. Transient Junction Temp. (°C) 116.3 143.4 131.0 158.2 137.6 164.0 146.0 173.4 169.4 Junction temperature measured using High-Speed Transient (HST) temperature detection microscopy. 8 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000035-09000P GaN Wideband 90 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V2 Applications Section Typical Performance Curves (reference 1.2 - 1.4 GHz parts list): 1.2 - 1.4 GHz, 3 ms Pulse, 10% Duty Cycle, VDD = +50 V, TA = 25°C, Z0 = 50 Ω Output Power vs. Input Power Gain vs. Input Power 22 100 20 80 18 60 16 40 1.2 GHz 1.3 GHz 1.4 GHz 14 12 0.0 0.5 1.2 GHz 1.3 GHz 1.4 GHz 20 1.0 1.5 2.0 0 0.0 0.5 1.0 1.5 Input Power (W) Input Power (W) PAE vs. Input Power 70 60 50 40 1.2 GHz 1.3 GHz 1.4 GHz 30 20 0.0 0.5 1.0 1.5 2.0 Input Power (W) 9 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 2.0 MAGX-000035-09000P GaN Wideband 90 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V2 Applications Section Typical Performance Curves (reference 1.6 GHz parts list): 1.6 GHz, 1 ms Pulse, 10% Duty Cycle, VDD= +50 V, TA = 25°C, Z0 = 50 Ω Output Power vs. Input Power Gain vs. Input Power 22 100 20 80 18 60 16 40 14 20 12 0.0 0.5 1.0 1.5 2.0 2.5 Input Power (W) 0 0.0 0.5 1.0 1.5 2.0 Input Power (W) PAE vs. Input Power 60 50 40 30 20 10 0.0 0.5 1.0 1.5 2.0 2.5 Input Power (W) 10 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 2.5 MAGX-000035-09000P GaN Wideband 90 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V2 Applications Section Typical Performance Curves (reference 2.7 - 3.1 GHz parts list): 2.7 - 3.1 GHz, 1 ms Pulse, 10% Duty Cycle, VDD = +50 V, TA = 25°C, Z0 = 50 Ω Output Power vs. Frequency Gain vs. Frequency 14 120 12 100 10 80 8 60 6 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 Frequency (GHz) 40 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 Frequency (GHz) PAE vs. Frequency 70 60 50 40 30 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 Frequency (GHz) 11 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 3.4 3.5