Protection Device TVS (Transient Voltage Suppressor) ESD202-B1-CSP01005 Bi-directional, 5.5 V, 6.5 pF, 01005, RoHS and Halogen Free compliant ESD202-B1-CSP01005 Data Sheet Revision 1.4, 2016-04-07 Final Power Management & Multimarket Edition 2016-04-07 Published by Infineon Technologies AG 81726 Munich, Germany © 2016 Infineon Technologies AG All Rights Reserved. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com) Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. ESD202-B1-CSP01005 Product Overview 1 Product Overview 1.1 Features • ESD / transient protection of high speed data lines according to: – IEC61000-4-2 (ESD): ±17 kV (air), ±15 kV (contact discharge) – IEC61000-4-4 (EFT): ±2 kV / ±40 A(5/50 ns) – IEC61000-4-5 (surge): ±3 A (8/20 µs) Bi-directional working voltage up to: VRWM = ±5.5 V Line capacitance: CL = 6.5 pF (typical) at f = 1 MHz Clamping voltage: VCL = 13 V (typical) at ITLP = 16 A with RDYN = 0.2 Ω (typical) Very low reverse current:. IR < 1 nA (typical) Minimized clamping overshoot due to extremely low parasitic inductance Small form factor SMD Size 01005 and low profile (0.43 mm x 0.23 mm x 0.15 mm) Bi-directional and symmetric I/V characteristics for optimized design and assembly Pb-free (RoHS compliant) and halogen free package • • • • • • • • Guidelines for optimized PCB design and assembly process available [2] 1.2 • • Application Examples[3] ESD Protection of highly susceptible IC/ASICs in audio, headset, human digital interfaces Dedicated solution to boost space saving and high performance in miniaturized modern electronics 1.3 Product Description a) Pin configuration b) Schematic diagram Configutation_Schematic_Diagram.vsd Figure 1-1 Pin Configuration and Schematic Diagram Table 1-1 Part Information Type Package Configuration Marking code ESD202-B1-CSP01005 WLL-2-2 1 line, bi-directional A1) 1) The device does not have any marking or date code on the device backside. The marking code is on pad side. Final Data Sheet 3 Revision 1.4, 2016-04-07 ESD202-B1-CSP01005 Maximum Ratings 2 Maximum Ratings Table 2-1 Maximum Ratings at TA = 25 °C, unless otherwise specified 1) Parameter Symbol Reverse working voltage ESD discharge contact air Values ±5.5 VRWM 2) Unit V kV VESD ±15 ±17 Peak pulse power3) PPK 36 W Peak pulse current IPP ±3 A Operating temperature range TOP -55 to 125 °C Storage temperature Tstg -65 to 150 °C 3) 1) Device is electrically symmetrical 2) VESD according to IEC61000-4-2 (R = 330 Ω, C = 150 pF discharge network) 3) Stress pulse: 8/20μs current waveform according to IEC61000-4-5 Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. 3 Electrical Characteristics $% & %' & %( & &( !" !! # Figure 3-1 Definitions of electrical characteristics Final Data Sheet 4 Revision 1.4, 2016-04-07 ESD202-B1-CSP01005 Electrical Characteristics Table 3-1 DC Characteristics at TA = 25 °C, unless otherwise specified 1) Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Breakdown voltage VBR 6 - 10 V IBR = 1 mA Reverse current IR - <1 100 nA VR = 5.5 V Unit Note / Test Condition pF VR = 0 V, f = 1 MHz 1) Device is electrically symmetrical Table 3-2 AC Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Line capacitance Table 3-3 CL Values Min. Typ. Max. – 6.5 – – 6.5 – VR = 0 V, f = 1 GHz ESD and Surge Characteristics at TA = 25 °C, unless otherwise specified1) Parameter Symbol 2) Clamping voltage VCL 3) Clamping voltage Dynamic resistance2) RDYN Values Unit Note / Test Condition V ITLP = 16 A, tp = 100 ns Min. Typ. Max. – 13 – – 17 – ITLP = 30 A, tp = 100 ns – 9.5 – IPP = 1 A, tp = 8/20 μs – 12 – IPP = 3 A, tp = 8/20 μs – 0.2 – Ω tp = 100 ns 1) Device is electrically symmetrical 2) Please refer to Application Note AN210[1]. TLP parameter: Z0 = 50 Ω , tp = 100ns, tr = 0.6 ns. 3) Stress pulse: 8/20μs current waveform according to IEC61000-4-5 Final Data Sheet 5 Revision 1.4, 2016-04-07 ESD202-B1-CSP01005 Typical Characteristics Diagrams 4 Typical Characteristics Diagrams Typical characteristics diagrams at TA = 25°C, unless otherwise specified 10-3 -4 10 -5 10 10-6 10-7 -8 IR [A] 10 -9 10 10-10 10-11 10-12 -13 10 -14 10 -6 -4 -2 0 VR [V] 2 4 6 Figure 4-1 Reverse leakage current: IR = f(VR) 10 9 8 CL [pF] 7 6 1 GHz 5 4 1 MHz 3 2 1 0 -3 -2.5 -2 -1.5 -1 -0.5 0 0.5 VR [V] 1 1.5 2 2.5 3 Figure 4-2 Line capacitance: CL = f(VR), f = 1 MHz Final Data Sheet 6 Revision 1.4, 2016-04-07 ESD202-B1-CSP01005 Typical Characteristics Diagrams 50 Scope: 6 GHz, 20 GS/s VCL-max-peak = 28 V 25 VCL [V] VCL-30ns-peak = 12 V 0 -25 -50 0 50 100 150 200 tp [ns] 250 300 350 400 450 Figure 4-3 Clamping voltage (ESD): VCL = f(t), 8 kV positive pulse 25 Scope: 6 GHz, 20 GS/s VCL [V] 0 VCL-max-peak = -28 V -25 VCL-30ns-peak = -11 V -50 -50 0 50 100 150 200 tp [ns] 250 300 350 400 450 Figure 4-4 Clamping voltage (ESD): VCL = f(t), 8 kV negative pulse Final Data Sheet 7 Revision 1.4, 2016-04-07 ESD202-B1-CSP01005 Typical Characteristics Diagrams 50 Scope: 6 GHz, 20 GS/s VCL-max-peak = 41 V 25 VCL [V] VCL-30ns-peak = 15 V 0 -25 -50 0 50 100 150 200 tp [ns] 250 300 350 400 450 Figure 4-5 Clamping voltage (ESD): VCL = f(t), 15 kV positive pulse 25 Scope: 6 GHz, 20 GS/s VCL [V] 0 VCL-max-peak = -41 V -25 VCL-30ns-peak = -14 V -50 -50 0 50 100 150 200 tp [ns] 250 300 350 400 450 Figure 4-6 Clamping voltage (ESD): VCL = f(t), 15 kV negative pulse Final Data Sheet 8 Revision 1.4, 2016-04-07 ESD202-B1-CSP01005 Typical Characteristics Diagrams 30 15 ESD202-B1-CSP01005 RDYN 25 12.5 20 10 15 7.5 10 5 5 2.5 0 0 -5 -2.5 -10 -5 -15 -7.5 Equivalent VIEC [kV] ITLP [A] RDYN = 0.2 Ω RDYN = 0.2 Ω -20 -10 -25 -12.5 -30 -20 -15 -10 -5 0 5 10 15 -15 20 VTLP [V] Figure 4-7 Clamping voltage (TLP): ITLP = f(VTLP) [1] Final Data Sheet 9 Revision 1.4, 2016-04-07 ESD202-B1-CSP01005 Typical Characteristics Diagrams 3.5 3 2.5 2 1.5 1 IPP [A] 0.5 0 -0.5 -1 -1.5 -2 -2.5 -3 -3.5 -12 -10 -8 -6 -4 -2 0 2 VCL [V] 4 6 8 10 12 Figure 4-8 Clamping voltage (Surge): IPP = f(VCL)[1] Final Data Sheet 10 Revision 1.4, 2016-04-07 ESD202-B1-CSP01005 Typical Characteristics Diagrams 0 Insertion Loss (|S21|) [dB] 1 2 3 4 5 6 7 8 9 10 10-2 ESD202-B1-CSP01005 0.1 1 Frequency [GHz] 10 Figure 4-9 Insertion loss vs. frequency in a 50 Ω system Final Data Sheet 11 Revision 1.4, 2016-04-07 ESD202-B1-CSP01005 Package Information 5 Package Information 5.1 WLL-2-2 Top view Bottom view 0.15 ±0.01 0.23 ±0.03 0.28 (0.15) 0.43 ±0.03 2 0.13 ±0.02 1 0.2 ±0.02 SG-WLL-2-2-PO V01 Figure 5-1 WLL-2-2: Package (dimension in mm) Copper Solder mask 0.3 0.3 0.15 0.23 0.15 0.23 Stencil apertures SG-WLL-2-2-FP V01 Figure 5-2 WLL-2-2 Footprint (dimension in mm) Recommendation for Printed Circuit Board Assembly[2] 8 0.5 0.2 2 0.2 0.28 SG-WLL-2-2-TP V01 Figure 5-3 WLL-2-2: Packing (dimension in mm) Marking on pad-side Type code Type code 1 1 1 1 SG-WLL-2-2-MK V02 Figure 5-4 WLL-2-2: Marking example Table 1-1 “Part Information” on Page 3 Final Data Sheet 12 Revision 1.4, 2016-04-07 ESD202-B1-CSP01005 References References [1] Infineon AG - Application Note AN210: Effective ESD Protection design at System Level Using VF-TLP Characterization Methodology [2] Infineon AG - Recommendation for Printed Circuit Board Assembly of Infineon WLL Packages http://www.infineon.com/dgdl/?fileId=db3a304344f7b4f9014503db540027c0 [3] Infineon AG - Application Note AN392: TVS Diodes in ChipScalePackage reduce size and save cost Final Data Sheet 8 Revision 1.4, 2016-04-07 ESD202-B1-CSP01005 Revision History: Rev.1.3, 2016-02-05 Page or Item Subjects (major changes since previous revision) Revision 1.4, 2016-04-07 6 Update of Figure 4-2 Trademarks of Infineon Technologies AG AURIX™, BlueMoon™, C166™, CanPAK™, CIPOS™, CIPURSE™, COMNEON™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SMARTi™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™, X-GOLD™, X-PMU™, XMM™, XPOSYS™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2010-10-26 Final Data Sheet 9 Revision 1.4, 2016-04-07 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG