4517

SHD114511
SHD114511A
SHD114511B
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4517, REV. A
POWER SCHOTTKY RECTIFIER
Low Reverse Leakage
Applications:
Switching Power Supply
Converters
Free-Wheeling Diodes
Polarity Protection Diode
Features:
Ultra Low Reverse Leakage Current
Soft Reverse Recovery at Low and High Temperature
Very Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward
Current
Max. Peak One Cycle NonRepetitive Surge Current
Non-Repetitive Avalanche
Energy
Repetitive Avalanche
Current
Thermal Resistance
Max. Junction Temperature
Max. Storage Temperature
Symbol
VRWM
IF(AV)
IFSM
EAS
IAR
RthJC
TJ
Tstg
Condition
50% duty cycle, rectangular
wave form
8.3 ms, half Sine wave
(per leg)
TJ = 25 C, IAS = 1.3 A,
L = 40mH (per leg)
IAS decay linearly to 0 in 1 s
limited by TJ max VA=1.5VR
Per Package
-
Max.
30
60
Units
V
A
860
A
27
mJ
1.3
A
0.7
-65 to +175
-65 to +175
C/W
C
C
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
Symbol
VF1
Condition
Max.
Units
0.53
V
@ 60A, Pulse, TJ = 25 C
(per leg) measured at the leads
VF2
0.43
V
@ 60A, Pulse, TJ = 125 C
(per leg) measured at the leads
Max. Reverse Current
IR1
@VR = 30V, Pulse,
6
mA
TJ = 25 C (per leg)
IR2
@VR = 30V, Pulse,
300
mA
TJ = 125 C (per leg)
Max. Junction Capacitance
CT
3300
pF
@VR = 5 V, TC = 25 C
fSIG = 1 MHz,
VSIG = 50mV (p-p) (per leg)
Due to the nature of the 30V Schottky devices, some degradation in trr performance at high temperatures should be
expected, unlike conventional lower voltage Schottkys.
©2012 Sensitron Semiconductor 221 West Industry Court  Deer Park, NY 11729-4681
 (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected]
SHD114511
SHD114511A
SHD114511B
SENSITRON
TECHNICAL DATA
DATA SHEET 4517, REV. A
Mechanical Dimensions: in inches / mm
.560±.020
.550±.020
(14.0±.508)
.410±.010
(10.4±.254)
(14.2±.508)
.410±.010
(10.4±.254)
.410±.010
(10.4±.254)
.410±.010
(10.4±.254)
.410±.010
(10.4±.254)
.200±.010
(5.08 ±.254)
.075 (1.91) Max
Moly Lid
.410±.010
(10.4±.254)
Moly
Lid
Copper Anode
.020±.005 R
.090 (2.29) Max
(.508±.127 )
.020±.002
(.508±.051)
Moly Bas e
(Cathode)
Alumina
Ring
.015±.005
(.381±.127)
.020±.005 R
(.508±.127 )
Alumina Ring
.075 (1.91)
Max
.150±.010
(3.81±.254)
Alumina Ring
.060±.010
(1.52±.254)
Moly Anode
.015±.002
(.381±.051)
Moly Base
(Cathode)
Moly
.060±.010
SHD-3
SHD-3A
(1.52±.254)
SHD-3B
Typical Forward Characteristics
Typical Reverse Characteristics
3
2
10
10
Instantaneous Reverse Current - I R (mA)
150 °C
101
125 °C
100 °C
101
75 °C
100
50 °C
10-1
25 °C
10-2
125 °C
0
100
10-1
0.0
0.1
0.2
0.3
0.4
0.5
Forward Voltage Drop -FV(V)
Vf Curves shown are for die only.
10
20
30
Reverse Voltage - R
V (V)
40
Typical Junction Capacitance
25 °C
0.6
Junction Capacitance - C T (pF)
Instantaneous Forward Current - I F (A)
150 °C
102
3000
2700
2400
2100
1800
0
10
20
30
Reverse Voltage - R
V (V)
©2012 Sensitron Semiconductor 221 West Industry Court  Deer Park, NY 11729-4681
 (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected]
40
SHD114511
SHD114511A
SHD114511B
SENSITRON
TECHNICAL DATA
DATA SHEET 4517, REV. A
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of the datasheet(s).
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medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
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©2012 Sensitron Semiconductor 221 West Industry Court  Deer Park, NY 11729-4681
 (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected]
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