4518

SENSITRON
SEMICONDUCTOR
SHD114512
SHD114512A
SHD114512B
TECHNICAL DATA
DATA SHEET 4518, REV. A
POWER SCHOTTKY RECTIFIER
Low Reverse Leakage
Applications:
Switching Power Supply
Converters
Free-Wheeling Diodes
Polarity Protection Diode
Features:
Ultra Low Reverse Leakage Current
Soft Reverse Recovery at Low and High Temperature
Very Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward
Current
Max. Peak One Cycle NonRepetitive Surge Current
Non-Repetitive Avalanche
Energy
Repetitive Avalanche
Current
Thermal Resistance
Max. Junction Temperature
Max. Storage Temperature
Symbol
VRWM
IF(AV)
IFSM
EAS
IAR
RthJC
TJ
Tstg
Condition
50% duty cycle, rectangular
wave form
8.3 ms, half Sine wave
(per leg)
TJ = 25 C, IAS = 1.3 A,
L = 40mH (per leg)
IAS decay linearly to 0 in 1 s
limited by TJ max VA=1.5VR
Per Package
-
Max.
45
60
Units
V
A
860
A
27
mJ
1.3
A
0.7
-65 to +175
-65 to +175
C/W
C
C
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
Symbol
VF1
Condition
Max.
Units
0.60
V
@ 60A, Pulse, TJ = 25 C
(per leg) measured at the leads
VF2
0.57
V
@ 60A, Pulse, TJ = 125 C
(per leg) measured at the leads
Max. Reverse Current
IR1
@VR = 45V, Pulse,
4.5
mA
TJ = 25 C (per leg)
IR2
@VR = 45V, Pulse,
210
mA
TJ = 125 C (per leg)
Max. Junction Capacitance
CT
2400
pF
@VR = 5 V, TC = 25 C
fSIG = 1 MHz,
VSIG = 50mV (p-p) (per leg)
Due to the nature of the 45V Schottky devices, some degradation in trr performance at high temperatures should be
expected, unlike conventional lower voltage Schottkys.
©2012 Sensitron Semiconductor 221 West Industry Court  Deer Park, NY 11729-4681
 (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected]
SHD114512
SHD114512A
SHD114512B
SENSITRON
TECHNICAL DATA
DATA SHEET 4518, REV. A
Mechanical Dimensions: in inches / mm
.560±.020
.550±.020
(14.0±.508)
.410±.010
(10.4±.254)
(14.2±.508)
.410±.010
(10.4±.254)
.410±.010
(10.4±.254)
.410±.010
(10.4±.254)
.410±.010
(10.4±.254)
.075 (1.91) Max
.200±.010
(5.08 ±.254)
Moly Lid
.150±.010
(3.81±.254)
.410±.010
(10.4±.254)
.015±.005
(.381±.127)
.020±.005 R
(.508±.127 )
Copper Anode
.090 (2.29) Max
Alumina Ring
.020±.005 R
(.508±.127 )
.075 (1.91)
Max
Moly
Lid
.020±.002
(.508±.051)
Moly Bas e
(Cathode)
Alumina
Ring
Alumina Ring
.060±.010
(1.52±.254)
Moly Anode
Moly Base
(Cathode)
Moly
.015±.002
(.381±.051)
.060±.010
SHD-3
SHD-3A
SHD-3B
Typical Forward Characteristics
Typical Reverse Characteristics
3
2
10
Instantaneous Reverse Current - I R (mA)
10
150 °C
101
102
150 °C
125 °C
101
100 °C
100
75 °C
50 °C
10-1
125 °C
25 °C
10-2
0
25 °C
100
Junction Capacitance - C T (pF)
Instantaneous Forward Current - I F (A)
(1.52±.254)
10-1
0.0
0.2
0.4
0.6
Forward Voltage Drop -FV(V)
0.8
10
20
30
40
Reverse Voltage - RV (V)
50
Typical Junction Capacitance
2500
2300
2100
1900
1700
1500
1300
1100
900
700
500
0
10
20
30
40
Reverse Voltage - RV (V)
Vf Curves shown are for die only.
©2012 Sensitron Semiconductor 221 West Industry Court  Deer Park, NY 11729-4681
 (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected]
50
SENSITRON
SHD114512
SHD114512A
SHD114512B
TECHNICAL DATA
DATA SHEET 4518, REV. A
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed writ ten permission of
Sensitron Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations.
©2012 Sensitron Semiconductor 221 West Industry Court  Deer Park, NY 11729-4681
 (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected]
Similar pages