IRF7483MTRPBF

StrongIRFET™
IRF7483MTRPbF
DirectFET® N-Channel Power MOSFET 
Application
 Brushed Motor drive applications
 BLDC Motor drive applications
Battery powered circuits
 Half-bridge and full-bridge topologies
 Synchronous rectifier applications
 Resonant mode power supplies
 OR-ing and redundant power switches
 DC/DC and AC/DC converters
 DC/AC Inverters
VDSS
40V
RDS(on) typ.
1.7m
max
2.3m
ID (Silicon Limited)
135A
S
Benefits
 Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
 Fully Characterized Capacitance and Avalanche SOA
 Enhanced body diode dv/dt and di/dt Capability
 Lead-Free, RoHS Compliant
Base part number
D
S
DirectFET® ISOMETRIC
Orderable Part Number
Form
Quantity
Tape and Reel
4800
IRF7483MTRPbF
150
ID = 81A
125
5.0
ID, Drain Current (A)
RDS(on), Drain-to -Source On Resistance (m)
DirectFET MF
S
MF
6.5
3.5
TJ = 125°C
2.0
100
75
50
25
TJ = 25°C
0.5
0
4
6
8
10
12
14
16
18
20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1
G
Standard Pack
Package Type
®
IRF7483MPbF
S
D
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© 2015 International Rectifier
25
50
75
100
125
150
TC , Case Temperature (°C)
Fig 2. Maximum Drain Current vs. Case Temperature
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IRF7483MTRPbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
Pulsed Drain Current 
IDM
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
VGS
Operating Junction and
TJ
Storage Temperature Range
TSTG
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy 
EAS (Thermally limited) Single Pulse Avalanche Energy 
Single Pulse Avalanche Energy Tested Value 
EAS (tested)
IAR
Avalanche Current 
EAR
Repetitive Avalanche Energy 
Thermal Resistance
Symbol
Parameter
Junction-to-Ambient 
RJA
Junction-to-Ambient 
RJA
Junction-to-Ambient 
RJA
Junction-to-Case 
RJC
Junction-to-PCB Mounted
RJ-PCB
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
RG
Notes:
 Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
 Used double sided cooling , mounting pad with large heatsink.
 Surface mounted on 1 in. square Cu
board (still air).
2
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Units
A
W
W/°C
V
°C
69
152
147
mJ
See Fig.15,16, 23a, 23b
A
mJ
Typ.
–––
12.5
20
–––
1.0
Max.
60
–––
–––
1.7
–––
Units
°C/W
Min. Typ. Max. Units
Conditions
40
––– –––
V
VGS = 0V, ID = 250µA
–––
32
––– mV/°C Reference to 25°C, ID = 1.0mA
––– 1.7
2.3
VGS = 10V, ID = 81A 
m
––– 3.4 ––– VGS = 6.0V, ID = 41A 
2.2
3.0
3.9
V
VDS = VGS, ID = 100µA
––– ––– 1.0
VDS = 40V, VGS = 0V
µA
––– ––– 150
VDS = 40V, VGS = 0V, TJ = 125°C
––– ––– 100
VGS = 20V
nA
––– ––– -100
VGS = -20V
––– 1.2 –––

 TC measured with thermocouple mounted to top (Drain) of part.
 Mounted to a PCB with small clip
heatsink (still air)
© 2015 International Rectifier
Max.
135
86
540
74
0.59
± 20
-55 to + 150
 Mounted on minimum footprint full size
board with metalized back and with
small clip heatsink (still air)
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IRF7483MTRPbF
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
125 ––– –––
S VDS = 10V, ID = 81A
Qg
Total Gate Charge
–––
81
ID = 81A
Qgs
Gate-to-Source Charge
–––
21
–––
VDS =20V
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
28
–––
VGS = 10V 
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
53
–––
ID = 81A, VDS =0V, VGS = 10V
td(on)
Turn-On Delay Time
–––
15
–––
VDD = 20V
tr
Rise Time
–––
53
–––
ID = 30A
ns
td(off)
Turn-Off Delay Time
–––
39
–––
RG = 2.7
tf
Fall Time
–––
25
–––
VGS = 10V 
Ciss
Input Capacitance
––– 3913 –––
VGS = 0V
Coss
Output Capacitance
––– 642 –––
VDS = 25V
Crss
Reverse Transfer Capacitance
––– 431 –––
pF ƒ = 1.0MHz
Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 765 –––
VGS = 0V, VDS = 0V to 32V 
Coss eff. (TR) Effective Output Capacitance (Time Related)
––– 932 –––
VGS = 0V, VDS = 0V to 32V 
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
VSD
dv/dt
Peak Diode Recovery 
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– –––
74
showing the
A
integral reverse
––– –––
540
p-n junction diode.
––– ––– 1.2
V TJ= 25°C,IS = 81A, VGS = 0V
D
G
S
–––
2.4
–––
–––
–––
–––
–––
–––
38
39
42
46
1.9
–––
–––
–––
–––
–––
TJ =150°C,IS = 81A,
VDS = 40V
TJ = 25° C VR = 34V,
ns
TJ = 125°C IF = 81A
TJ = 25°C di/dt = 100A/µs 
nC
TJ = 125°C
A TJ = 25°C
V/ns
Notes:
Repetitive rating; pulse width limited by max. junction
temperature.
 Limited by TJmax, starting TJ = 25°C, L = 0.021mH
RG = 50, IAS = 81A, VGS =10V.
 ISD ≤ 81A, di/dt ≤ 839A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the
same charging time as Coss while VDS is rising from 0
to 80% VDSS.
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© 2015 International Rectifier

Coss eff. (ER) is a fixed capacitance that gives the
same energy as Coss while VDS is rising from 0 to
80% VDSS.

When mounted on 1" square PCB (FR-4 or G-10
Material). For recommended footprint and soldering
techniques refer to application note # AN-994.
http://www.irf.com/technical-info/appnotes/an-994.pdf
 R is measured at TJ approximately 90°C.
 This value determined from sample failure population,
starting TJ = 25°C, L= 0.021mH, RG = 50, IAS = 81A,
VGS =10V.
Limited by TJmax, starting TJ = 25°C, L = 1mH
RG = 50, IAS = 17A, VGS =10V.
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IRF7483MTRPbF
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
BOTTOM
10
4.5V
BOTTOM
100
4.5V
60µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 25°C
Tj = 150°C
1
10
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
100
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current(A)
10
Fig 4. Typical Output Characteristics
1000
TJ = 150°C
100
TJ = 25°C
10
VDS = 10V
60µs PULSE WIDTH
ID = 81A
VGS = 10V
1.5
1.0
0.5
0.0
1.0
2
3
4
5
6
7
-60 -40 -20 0
8
Fig 5. Typical Transfer Characteristics
100000
Fig 6. Normalized On-Resistance vs. Temperature
14.0
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
10000
Ciss
Coss
Crss
1000
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
1
VDS, Drain-to-Source Voltage (V)
Fig 3. Typical Output Characteristics
ID= 81A
12.0
VDS = 32V
VDS = 20V
10.0
8.0
6.0
4.0
2.0
0.0
100
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
4
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
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0
20
40
60
80
100
QG, Total Gate Charge (nC)
Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage
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IRF7483MTRPbF
10000
100
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
TJ = 150°C
10
TJ = 25°C
1
VGS = 0V
0.4
0.5
0.6
0.7
0.8
0.9
1000
100µsec
100
10
1msec
DC
1
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0.01
0.1
0.3
OPERATION IN THIS AREA
LIMITED BY R DS(on)
0.1
1.0
1
Fig 10. Maximum Safe Operating Area
Fig 9. Typical Source-Drain Diode Forward Voltage
0.6
48
Id = 1.0mA
0.5
46
0.4
45
Energy (µJ)
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
100
VDS , Drain-to-Source Voltage (V)
VSD , Source-to-Drain Voltage (V)
47
10
44
43
0.3
0.2
42
41
0.1
40
0.0
39
-60 -40 -20 0
-5
20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
5
10 15 20 25 30 35 40 45
VDS, Drain-to-Source Voltage (V)
Fig 12. Typical Coss Stored Energy
Fig 11. Drain-to-Source Breakdown Voltage
RDS (on), Drain-to -Source On Resistance (m)
0
10
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS = 10V
9
8
7
6
5
4
3
2
1
0
0
25
50
75
100 125 150 175 200
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
5
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IRF7483MTRPbF
Thermal Response ( Z thJC ) °C/W
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Avalanche Current (A)
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
100
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming  j = 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Avalanche Current vs. Pulse Width
80
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 81A
EAR , Avalanche Energy (mJ)
70
60
50
40
30
20
10
0
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy vs. Temperature
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Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav Submit Datasheet Feedback
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IRF7483MTRPbF
4.5
8
4.0
7
IF = 54A
VR = 34V
6
TJ = 25°C
TJ = 125°C
3.5
3.0
IRRM (A)
VGS(th), Gate threshold Voltage (V)
ID = 100µA
ID = 250µA
5
4
ID = 1.0mA
2.5
3
ID = 1.0A
2.0
2
1.5
1
-75 -50 -25
0
25
50
75 100 125 150
100
200
TJ , Temperature ( °C )
400
500
600
diF /dt (A/µs)
Fig 17. Threshold Voltage vs. Temperature
Fig 18. Typical Recovery Current vs. dif/dt
160
8
7
IF = 81A
VR = 34V
140
IF = 54A
VR = 34V
6
TJ = 25°C
TJ = 125°C
120
TJ = 25°C
TJ = 125°C
QRR (nC)
IRRM (A)
300
5
4
100
80
3
60
2
40
20
1
100
200
300
400
500
100
600
200
300
400
500
600
diF /dt (A/µs)
diF /dt (A/µs)
Fig 20. Typical Stored Charge vs. dif/dt
Fig 19. Typical Recovery Current vs. dif/dt
QRR (nC)
160
140
IF = 81A
VR = 34V
120
TJ = 25°C
TJ = 125°C
100
80
60
40
20
100
200
300
400
500
600
diF /dt (A/µs)
Fig 21. Typical Stored Charge vs. dif/dt
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IRF7483MTRPbF
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
tp
15V
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
20V
tp
A
I AS
0.01
Fig 23a. Unclamped Inductive Test Circuit
Fig 23b. Unclamped Inductive Waveforms
Fig 24a. Switching Time Test Circuit
Fig 24b. Switching Time Waveforms
Id
Vds
Vgs
VDD Vgs(th)
Qgs1 Qgs2
Fig 25a. Gate Charge Test Circuit
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Qgd
Qgodr
Fig 25b. Gate Charge Waveform
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IRF7483MTRPbF
DirectFET® Board Footprint, MF Outline
(Medium Size Can, E-Designation)
Please see DirectFET® application note AN-1035 for all details regarding the assembly of DirectFET®.
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
D
G
S
S
S
D
D
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRF7483MTRPbF
DirectFET® Outline Dimension, MF Outline
(Medium Size Can, E-Designation)
Please see DirectFET® application note AN-1035 for all details regarding the assembly of DirectFET®. This includes all
recommendations for stencil and substrate designs.
DIMENSIONS
CODE
A
B
C
D
E
F
G
H
J
J1
K
L
M
N
P
METRIC
MIN MAX
6.25 6.35
4.80 5.05
3.85 3.95
0.35 0.45
0.58 0.62
1.08 1.12
0.93 0.97
1.28 1.32
0.38 0.42
0.58 0.62
0.88 0.92
2.08 2.12
0.59 0.70
0.02 0.08
0.08 0.17
IMPERIAL
MIN
MAX
0.246
0.250
0.189
0.199
0.152
0.156
0.014
0.018
0.023
0.024
0.043
0.044
0.037
0.038
0.050
0.052
0.015
0.017
0.023
0.024
0.035
0.036
0.082
0.083
0.023
0.028
0.0008 0.003
0.003
0.007
Dimensions are shown in
millimeters (inches)
DirectFET® Part Marking
LOGO
GATE MARKING
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRF7483MTRPbF
DirectFET® Tape & Reel Dimension (Showing component orientation).
LOADED TAPE FEED DIRECTION
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF7483MTRPBF). For 1000 parts on 7"
reel, order IRF7483MTR1PBF
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
A
B
C
D
E
F
G
H
DIMENSIONS
IMPERIAL
METRIC
MIN
MAX
MIN
MAX
0.311
0.319
7.90
8.10
0.154
0.161
3.90
4.10
0.469
0.484
11.90
12.30
0.215
0.219
5.45
5.55
0.201
0.209
5.10
5.30
0.256
0.264
6.50
6.70
0.059
N.C
1.50
N.C
0.059
0.063
1.50
1.60
REEL DIMENSIONS
TR1 OPTION (QTY 1000)
STANDARD OPTION (QTY 4800)
IMPERIAL
IMPERIAL
METRIC
METRIC
MIN
MAX
MIN
CODE
MAX
MIN
MIN
MAX
MAX
6.9
N.C
12.992
A
N.C
177.77
330.0
N.C
N.C
0.75
0.795
B
N.C
19.06
20.2
N.C
N.C
N.C
0.53
C
0.504
0.50
13.5
12.8
0.520
13.2
12.8
0.059
D
0.059
N.C
1.5
1.5
N.C
N.C
N.C
2.31
E
3.937
N.C
58.72
100.0
N.C
N.C
N.C
F
N.C
N.C
0.53
N.C
N.C
0.724
18.4
13.50
G
0.47
0.488
N.C
11.9
12.4
0.567
14.4
12.01
H
0.47
0.469
N.C
11.9
11.9
0.606
15.4
12.01
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Qualification Information† Industrial *
(per JEDEC JESD47F†† guidelines)
Qualification Level Moisture Sensitivity Level
MSL1
DFET 1.5
(per JEDEC J-STD-020D††)
Yes
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Applicable version of JEDEC standard at the time of product release.
††
* Industrial qualification standards except autoclave test conditions.
Revision History
Date
05/14/2015
Comments

Updated registered trademark from DirectFETTM to DirectFET® on page 1,9 and 10.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
11
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