MAGX-002735-040L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle Production V1 26 March 12 Features GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation Thermally enhanced Cu/Mo/Cu package RoHS Compliant +50V Typical Operation MTTF of 600 years (Channel Temperature < 200°C) Application Civilian and Military Pulsed Radar Product Description The MAGX-002735-040L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide RF power transistor optimized for civilian and military radar pulsed applications between 2700 - 3500 MHz. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for today’s demanding application needs. The MAGX-002735-040L00 is constructed using a thermally enhanced Cu/Mo/Cu flanged ceramic package which provides excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. Freq (MHz) Pin Pout (W Peak) (W Peak) Gain (dB) Id-Pk (A) Eff (%) 2700 4 44 10.4 1.7 53 2800 4 45 10.5 1.7 53 2900 4 44 10.5 1.6 56 3000 4 43 10.3 1.7 51 3100 4 46 10.6 1.7 54 3200 4 47 10.7 1.7 54 3300 4 47 10.7 1.7 57 3400 4 43 10.3 1.5 55 3500 4 42 10.2 1.5 55 Typical RF performance measured in M/A-COM RF test fixture. Devices tested in common source Class-AB configuration as follows: Vdd=50V, Idq=250mA (pulsed), F=2.7—3.5 GHz, Pulse=300us, Duty=10%. Ordering Information MAGX-002735-040L00 MAGX-002735-SB0PPR Typical RF Performance 40W GaN Power Transistor Evaluation Fixture 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. MAGX-002735-040L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle Production V1 26 March 12 Absolute Maximum Ratings Table (1, 2, 3) Supply Voltage (Vdd) Supply Voltage (Vgg) +65V -8 to 0V Supply Current (Id1) Input Power (Pin) 3A +36 dBm Absolute Max. Junction/Channel Temp Continuous Power Dissipation (Pdiss) at 85 ºC 200 ºC 27 W Pulsed Power Dissipation (Pavg) at 85 ºC 55 W MTTF (TJ<200°C) 600 years Thermal Resistance, (Tchannel = 200 ºC) Pulsed 500uS, 10% Duty cycle 2.0 ºC/W Operating Temp -40 to +95C Storage Temp Mounting Temperature -65 to +150C See solder reflow profile ESD Min. - Machine Model (MM) ESD Min. - Human Body Model (HBM) 50 V >250 V MSL Level MSL1 (1) Operation of this device above any one of these parameters may cause permanent damage. (2) Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime. (3) For saturated performance it recommended that the sum of (3*Vdd + abs(Vgg)) <175 Parameter Test Conditions Symbol Min Typ Max Units IDS - - 2.5 mA VGS (th) -5 -3 -2 V GM 1.0 - - S DC CHARACTERISTICS Drain-Source Leakage Current VGS = -8V, VDS = 175V Gate Threshold Voltage VDS = 5V, ID = 6mA Forward Transconductance VDS = 5V, ID = 1.5mA DYNAMIC CHARACTERISTICS Input Capacitance VDS = 0v, VGS = -8V, F = 1MHz CISS - 13.2 - pF Output Capacitance VDS = 50V, VGS = -8V, F = 1MHz COSS - 5.6 - pF Reverse Transfer Capacitance VDS = 50V, VGS = -8V, F = 1MHz CRSS - 0.5 - pF 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. MAGX-002735-040L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle Production V1 26 March 12 Electrical Specifications: TC = 25 ± 5°C (Room Ambient ) Parameter Test Conditions Symbol Min Typ Max Units Output Power Pin = 4W Peak POUT 36 3.6 44 4.4 - W Peak W Ave Power Gain Pin = 4W Peak GP 9.5 10.5 - dB Drain Efficiency Pin = 4W Peak ηD 48 55 - % Load Mismatch Stability Pin = 4W Peak VSWR-S 5:1 - - - Load Mismatch Tolerance Pin = 4W Peak VSWR-T 10:1 - - - Test Fixture Impedance F (MHz) ZIF (Ω) ZOF (Ω) 2700 9.2+ j2.1 7.5 + j8.9 2800 2900 3000 3100 3200 3300 3400 3500 9.0 + j1.5 8.7 + j0.8 8.3 + j0.1 7.8 - j0.7 7.0 - j1.5 6.0 - j2.0 4.9 - j2.1 4.2 - j2.7 7.9 + j8.9 8.2 + j8.5 8.3 + j8.3 8.2 + j8.4 9.1 + j8.3 9.4 + j7.2 9.4 + j7.2 9.0 + j6.8 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. MAGX-002735-040L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle Production V1 26 March 12 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. MAGX-002735-040L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle Production V1 26 March 12 5 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. MAGX-002735-040L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle Production V1 26 March 12 Test Fixture Assembly 6 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. MAGX-002735-040L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle Production V1 26 March 12 Outline Drawings CORRECT DEVICE SEQUENCING TURNING THE DEVICE ON TURNING THE DEVICE OFF 1. Set VGS to the pinch-off (VP), typically -5V 2. Turn on VDS to nominal voltage (50V) 3. Increase VGS until the IDS current is reached 4. Apply RF power to desired level 1. Turn the RF power off 2. Decrease VGS down to VP 3. Decrease VDS down to 0V 4. Turn off VGS 7 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.