Phototransistors PNZ155 (PN155) Silicon NPN Phototransistor 1.5±0.2 For optical control systems 3.9±0.25 Features 4.5±0.15 3.5±0.15 High sensitivity 2.1±0.15 1.6±0.15 0.8±0.1 (2.95) Wide spectral sensitivity, suited for detecting GaAs LEDs Not soldered 0.8 max. Unit : mm Low dark current 12.8 min. Flat type plastic package 2-1.2±0.3 2-0.45±0.15 1 2 2.54±0.2 0.45±0.2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit Collector to emitter voltage VCEO 20 V Emitter to collector voltage VECO 5 V IC 10 mA Collector current Collector power dissipation PC 100 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C 1: Emitter 2: Collector Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Dark current ICEO Collector photo current Peak sensitivity wavelength Acceptance half angle Response time Collector saturation voltage ICE(L) Conditions min VCE = 10V *1 Unit 1 µA 0.2 mA VCE = 10V 800 nm θ Measured from the optical axis to the half power point 70 deg. tr, tf*2 VCC = 10V, ICE(L) = 1mA, RL = 100Ω 4 µs VCE(sat) 0.05 max λP *1 VCE = 10V, L = 100 lx typ 0.01 ICE(L) = 1mA, L = 1000 lx 0.2 0.5 V *1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. *2 Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) RL ;;;; ;; 50Ω 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) Note) The part number in the parenthesis shows conventional part number. 1 Phototransistors PNZ155 PC — Ta 40 20 20 40 60 80 1 10 –1 VCE = 10V 10 –2 10 –2 1 10 2 10 10 3 10 –3 – 40 10 4 0 40 80 Ambient temperature Ta (˚C ) Illuminance L (lx) Ambient temperature Ta (˚C ) Spectral sensitivity characteristics tr — ICE(L) tf — ICE(L) VCE = 10V Ta = 25˚C VCC = 10V Ta = 25˚C 10 4 120 VCC = 10V Ta = 25˚C 10 4 80 10 3 40 10 2 Fall time 60 tf (µs) 10 3 RL = 1kΩ 500Ω 10 10 2 RL = 1kΩ 500Ω 10 100Ω 100Ω 20 0 200 1 1 400 600 800 1000 Wavelength λ (nm) 2 10 –1 10 –3 100 tr (µs) Relative sensitivity S (%) 100 0 1 ICEO (µA) 60 10 Dark current ICE(L) (mA) Collector photo current 80 Rise time PC (mW) Collector power dissipation 100 10 VCE = 10V Ta = 25˚C T = 2856K 10 2 0 – 20 ICEO — Ta ICE(L) — L 120 1200 10 –1 10 –2 10 –1 1 10 10 2 Collector photo current ICE(L) (mA) 10 –1 10 –2 10 –1 1 10 10 2 Collector photo current ICE(L) (mA) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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