MAGX-000035-030000 GaN HEMT Power Transistor 30W CW, 30 MHz - 3.5 GHz Production V1 10 Feb 12 Features GaN depletion mode HEMT microwave transistor Common source configuration No internal matching Broadband Class AB operation Thermally enhanced Cu/Mo/Cu package RoHS Compliant +50V Typical Operation MTTF of 600 years (Channel Temperature < 200°C) Applications General purpose for pulsed or CW applications Commercial Wireless Infrastructure - WCDMA, LTE, WIMAX Civilian and Military Radar Military and Commercial Communications Public Radio Industrial, Scientific and Medical SATCOM Instrumentation Avionics Product Description Typical CW RF Performance The MAGX-000035-030000 is a gold metalized unmatched Gallium Nitride (GaN) on Silicon Carbide RF power transistor suitable for a variety of RF power amplifier applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over multiple octave bandwidths for today’s demanding application needs. The MAGX-000035-030000 is constructed using a thermally enhanced Cu/Mo/Cu flanged ceramic package which provides excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. Freq. (MHz) (W Ave) Gain (dB) Eff (%) 30 58 40 80 100 44 32 65 500 43 27 66 1500 42 20 59 3000 35 13 55 3500 30 12 53 Pout Ordering Information MAGX-000035-030000 MAGX-000035-SB1PPR 30W GaN Power Transistor 1.5 GHz Evaluation Board 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. MAGX-000035-030000 GaN HEMT Power Transistor 30W CW, 30 MHz - 3.5 GHz Production V1 10 Feb 12 Absolute Maximum Ratings (1, 2, 3) Limit Supply Voltage (Vdd) Supply Voltage (Vgg) Supply Current (Id1) Input Power (Pin) Junction/Channel Temp +65V -8 to 0V 1200 mA +30 dBm 200 ºC MTTF (TJ<200°C) 600 years Continuous Power Dissipation (Pdiss) at 85 ºC Pulsed Power Dissipation (Pavg) at 85 ºC Thermal Resistance, (Tchannel = 200 ºC), CW Thermal Resistance, (Tchannel = 200 ºC), Pulsed 500uS, 10% Duty cycle Operating Temp Storage Temp ESD Min. - Machine Model (MM) ESD Min. - Human Body Model (HBM) 30 W 65 W 4.2 ºC/W 2 ºC/W -40 to +95C -65 to +150C 50 V >250 V (1) Operation of this device above any one of these parameters may cause permanent damage. (2) Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime. (3) For saturated performance it recommended that the sum of (3*Vdd + abs(Vgg)) <175 Parameter Test Conditions Symbol Min Typ Max Units IDS - - 2.5 mA VGS (th) -5 -3 -2 V GM 1.0 - - S DC CHARACTERISTICS Drain-Source Leakage Current VGS = -8V, VDS = 175V Gate Threshold Voltage VDS = 5V, ID = 6mA Forward Transconductance VDS = 5V, ID = 1.5mA DYNAMIC CHARACTERISTICS Input Capacitance VDS = 0v, VGS = -8V, F = 1MHz CISS - 13.2 - pF Output Capacitance VDS = 50V, VGS = -8V, F = 1MHz COSS - 5.6 - pF Reverse Transfer Capacitance VDS = 50V, VGS = -8V, F = 1MHz CRSS - 0.5 - pF 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. MAGX-000035-030000 GaN HEMT Power Transistor 30W CW, 30 MHz - 3.5 GHz Production V1 10 Feb 12 Electrical Specifications: TC = 25 ± 5°C (Room Ambient ) Parameter Test Conditions Symbol Min Typ Max Units - W Ave RF FUNCTIONAL TESTS Vdd=50V, Idq= 100 mA, single frequency optimized data CW Output Power (P2dB) 1 .5GHz Pin = 0.7W Ave POUT 30 42 Small Signal Gain @ 1.5 GHz Pout = 5W Ave GP 18 20 dB Drain Efficiency @ 1.5 GHz Pin = 0.7W Ave ηD 50 60 % Load Mismatch Stability Pin = 1W Ave VSWR-S 5:1 - - - Load Mismatch Tolerance Pin = 1W Ave VSWR-T 10:1 - - - Test Fixture Impedance Zif F (MHz) Zif-opt (Ω) Zof-opt (Ω) 30 71 + j 255 24.9 - j 6.8 100 7.7 + j 66.6 22.14 - j 4.33 500 3.19 + j 13.8 21.8 + j 9.94 1500 1.4 + j 0.16 9.31 + j 9.34 3000 3.1 - j 9.96 3.32 + j 1.2 INPUT NETWORK OUTPUT NETWORK Zof 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. MAGX-000035-030000 GaN HEMT Power Transistor 30W CW, 30 MHz - 3.5 GHz Production V1 10 Feb 12 Small Signal Gain vs Frequency (single point Gain (dB) optmized) 50 40 30 20 10 0 30 100 500 1500 3000 3500 Frequency (MHz) Efficiency vs Frequency, P2dB Efficiency (%) (single point optmized) 100 80 60 40 20 0 30 100 500 1500 3000 3500 Frequency (MHz) CW Output Power (P2dB) vs Frequency (single Pout (W) point optmized) 70 60 50 40 30 20 10 0 30 100 500 1500 3000 3500 Frequency (MHz) 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. MAGX-000035-030000 GaN HEMT Power Transistor 30W CW, 30 MHz - 3.5 GHz Production V1 10 Feb 12 Pout vs Pin (f=1.5 GHz) 55 Pout (dBm) 50 45 40 35 30 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 Pin (dBm) IMD3 (dBc), F0=1.5GHz, DF=5MHz -12.00 -17.00 -22.00 IMD3(Idq=100mA) IMD3(Idq=150mA) IMD3(Idq=200mA) IMD3(Idq=250mA) -27.00 -32.00 -37.00 -42.00 -47.00 -52.00 0.10 1.00 10.00 100.00 Pout-avg (W) 5 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. MAGX-000035-030000 GaN HEMT Power Transistor 30W CW, 30 MHz - 3.5 GHz Production V1 10 Feb 12 1.5 GHz Test Fixture Circuit Dimensions 1.5 GHz Test Fixture Assembly 6 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. MAGX-000035-030000 GaN HEMT Power Transistor 30W CW, 30 MHz - 3.5 GHz Production V1 10 Feb 12 Outline Drawings CORRECT DEVICE SEQUENCING TURNING THE DEVICE ON TURNING THE DEVICE OFF 1. Set VGS to the pinch-off (VP), typically -5V 2. Turn on VDS to nominal voltage (50V) 3. Increase VGS until the IDS current is reached 4. Apply RF power to desired level 1. Turn the RF power off 2. Decrease VGS down to VP 3. Decrease VDS down to 0V 4. Turn off VGS 7 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.