Product Brief OptiMOS™ 5 25V in Power Block Package

Product Brief
OptiMOS™ 5 25 V Power Block
Asymmetric Halfbridge Handles 50 A in a 30 mm2 Footprint
OptiMOS™ 5 Power Block is a leadless SMD package in a 5.0x6.0 mm² package outline,
including a low-side and a high-side MOSFET in a synchronous buck converter
configuration. By replacing two separate discrete packages, such as SO8 or SuperSO8,
with the OptiMOS™ 5 Power Block, customers can shrink their designs up to 85%.
Standardizing power packages benefits the customer, as the number of different package
outlines available in the market place is minimized.
Main Features
„„ 50 A max. average load current
„„ Source-down low-side MOSFET for
better PCB cooling
„„ Internally connected low-side and
high-side (lowest loop inductance)
Benchmark Efficiency and High Current Handling
OptiMOS™ 5 Power Block features Infineon’s latest generation MOSFETs, which offer
lowest on-state resistance (RDS(on)) and Figure of Merits (Qg, Qgd). The source-down
connection of the low-side MOSFET results in a big PGND pad which significantly
improves the thermal junction to the board, simplifies layout options and reduces EMI.
Together with OptiMOS™ Driver (PX3519, PX3517) and Controller family, Infineon offers
an excellent discrete solution for low voltage DC/DC power conversion with a current
handling up to 50 A and a superior peak efficiency of 95%. This solution allows engineers
to optimize their designs by increasing switching frequency and power density as well as
to improve the overall BOM costs.
„„ High-side Kelvin connection for
Thermal infrared picture of a 5-phase
board at 200 A output current
OptiMOS™ 5 25 V Power Block BSG0811ND
reaches a maximum temperature of
only 61.7 °C.
Applications
Conditions: 5 phases; Vin = 12 V; Vout = 1.8 V;
L = 150 nH; fsw = 430 kHz; Airflow = 300 lfm;
www.infineon.com/powerblock
more efficient driving
Key Benefits
„„ Compact and simplified layout for
DC/DC converter
„„ Optimized layout with lowest
loop inductivity and best thermal
performance
„„ Desktop and Server
„„ Single-phase and Mulitphase PoL
„„ CPU/GPU regulation in Notebooks
„„
and DDR Memory
High Power Density Voltage Regulator
Product Brief
OptiMOS™ 5 25 V Power Block
Asymmetric Halfbridge Handles 50 A in a 30 mm2 Footprint
Easy and Compact Layout
Improved power loop (connection to input capacitors)
Direct PGND connection for better cooling.
95% Peak Efficiency
Latest generation of OptiMOS™ 5 MOSFETs with low on-state resistance and optimized Figure of Merits provide a superior efficiency
behavior over the whole load range.
Top Layer Layout
Power Block
Cin
System Efficiency
95
Efficiency [%]
BSG0811ND
Induction
90
85
80
75
0
25
50
75
100
125
150
175
200
225
250
Output Load Current [A]
Cout
BSG0811ND and PX3519 measurement on 5-phase board;
Vin = 12 V; Vout = 1.8 V; L = 150 nH; fsw = 430 kHz; Airflow = 300 lfm;
Product Portfolio Part Number
1)
2)
Schottky-like
Diode 1)
BVDSS (V)
RDS(on) @ Vgs = 4.5 max
Qg tot @ Vgs = 4.5 typ
Package Size
High-Side
Low-Side
High-Side
Low-Side
W x L x T [mm³]
Sample
Status
BSG0810NDI 2)
Y
25
4
1.2
5.6
16
5.0x6.0x1.0
available
BSG0811ND
N
25
4
1.1
5.6
20
5.0x6.0x1.0
available
BSG0813NDI
Y
25
4
1.7
5.6
12
5.0x6.0x1.0
available
Part Number
Package
Max. Juncion Temperature
Boot to GND
Features
Sample Status
PX3517
3.0x3.0x0.9 mm3 TDSON-10
-25 °C to 125 °C
30
thermal warning
available
PX3519
3.0x3.0x0.9 mm3 VDSON-8
-25 °C to 125 °C
30
driver enable pin
available
monolithic integrated Schottky-like diode
release planned for Q3 2015
Published by
Infineon Technologies Austria AG
9500 Villach, Austria
© 2015 Infineon Technologies AG.
All Rights Reserved.
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www.infineon.com
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Order Number: B111-I0098-V1-7600-EU-EC-P
Date: 03 / 2015
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