PIN Photodiodes PNZ327 (PN327) PIN Photodiode Unit : mm 6.0±0.2 7.5±0.2 (2) 5.5±0.2 1.0 For optical control systems Not soldered 1.5 max. 4.6±0.2 2.3 Chip Features 22.25±1.0 High sensitivity, high reliability Peak sensitivity wavelength matched with infrared light emitting diodes : λP = 900 nm (typ.) 1.32 0.5 31.25±1.0 1.5±0.2 Fast response which is well suited to high speed modulated light detection : tr, tf = 50 ns (typ.) 2- 0.6±0.1 0.5 (1.5) Wide detection area, wide acceptance half angle : θ = 70 deg. (typ.) 2.54 Parameter Ratings Unit VR 30 V Power dissipation PD 100 mW Operating ambient temperature Topr –30 to +85 ˚C Storage temperature Tstg – 40 to +100 ˚C 0.6±0.1 Symbol Reverse voltage (DC) 3.8±0.2 (2.3) Absolute Maximum Ratings (Ta = 25˚C) 1 2 1: Anode 2: Cathode Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Conditions min typ max 50 Dark current ID VR = 10V 5 Photo current IL VR = 10V, L = 1000 lx*1 70 Sensitivity to infrared emitters SIR*2 Peak sensitivity wavelength λP *3 Response time tr, tf Response time tr, tf*3 VR = 5V, H = 0.1 mW/cm2 Unit nA µA µA 4.5 VR = 10V 900 nm VR = 10V, RL = 1kΩ 50 ns VR = 10V, RL = 100kΩ 5 µs Capacitance between pins Ct VR = 0V, f = 1MHz 70 pF Acceptance half angle θ Measured from the optical axis to the half power point 70 deg. *1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Light source : λ = 940 nm *3 Switching time measurement circuit *2 Sig.IN VR = 10V (Input pulse) λP = 800nm Sig.OUT ;;;; ;;;; (Output pulse) 50Ω 90% 10% RL td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) Note) The part number in the parenthesis shows conventional part number. 1 PIN Photodiodes PNZ327 PD — Ta 60 40 ID (nA) 10 2 10 Dark current IL (µA) Photo current PD (mW) 80 10 3 VR = 10V Ta = 25˚C T = 2856K 100 Power dissipation ID — Ta IL — L 10 3 120 1 VR = 10V 10 2 10 1 20 0 – 30 0 20 40 60 80 10 –1 10 100 10 2 Ambient temperature Ta (˚C ) 80 60 40 20 40 60 80 100 Directivity characteristics 100 VR = 10V Ta = 25˚C Ta = 25˚C S (%) 80 60 Relative sensitivity S (%) 100 Relative sensitivity IL (%) Relative photo current 120 0 Ambient temperature Ta (˚C ) Spectral sensitivity characteristics 100 VR = 10V L = 1000 lx T = 2856K 140 10 –1 – 40 – 20 10 4 Illuminance L (lx) IL — Ta 160 10 3 40 80 60 40 20 20 20 0 – 40 – 20 0 20 40 60 80 0 200 100 400 Ct — VR 20 10 Reverse voltage VR (V) 10 2 10 0 40 80 ID — VR VR = 10V 50Ω Sig. OUT RL tr td 90% 10% tf 1 Dark current 40 1 40 10 2 ;; 60 10 –1 80 Angle θ (deg.) ID (nA) tr , tf (µs) 80 Rise time, Fall time Ct (pF) 0 1200 tr , tf — RL Sig.IN Capacitance between pins 1000 10 2 100 2 800 Wavelength λ (nm) Ambient temperature Ta (˚C ) 0 10 –2 600 10 –1 10 –2 10 –1 1 10 10 2 External load resistance RL (kΩ) 10 1 10 –1 0 8 16 24 32 40 Reverse voltage VR (V) 48 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. 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