C180A-C180PC SERIES SILICON CONTROLLED RECTIFIERS High-reliability discrete products and engineering services since 1977 FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Characteristics Symbol C180 Units RMS on-state current IT(RMS) 235 A Average on-state current IT(AV) 150 A Peak one-cycle surge (non-repetitive) on-state current (60Hz) ITSM 3500 A Peak one-cycle surge (non-repetitive) on-state current (50Hz) ITSM 3200 A Critical rate of rise of on-state current (non-repetitive) di/dt 800 A/µs Critical rate of rise of on-state current (repetitive) di/dt 150 A/µs I2t 50,800 A2s Peak gate power dissipation PGM 10 W Average gate power dissipation PG(AV) 2 W Storage temperature Tstg -40 to +150 °C Operating temperature TJ I2t (for fusing), 8.3 ms -40 to +125 °C Mounting torque 250 to 300 In.-lb. Mounting torque 28 to 34 N-m VOLTAGE RATINGS Characteristics Working peak reverse voltage C180A C180B C180C C180D C180E C180N C180S C180M C180T C180P C180PA C180PB C180 100 200 300 400 500 600 700 800 900 1000 1100 1200 130 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) Characteristics Symbol Test Conditiions C180 Unit Voltage – Blocking State Maximums Forward leakage, peak IDRM TJ = 125°C, VDRM = Rated 20 mA Reverse leakage, peak IRRM TJ = 125°C, VRRM = Rated 20 mA Current – Conducting State Maximums Peak on-state voltage VTM TJ = 25°C, ITM = 1500A 2.85 V Switching Typical turn-off time tq IT = 150A, TJ = 125°C, diR/dt = 12.5A/µsec, reapplied dv/dt = 20V/µsec, linear to 0.8VDRM, VR = 50V 100 µsec Typical delay time td IT = 100A, VDRM = Rated, gate supply = 10V open ckt, 25Ω, 0.1 µsec rise time 1.0 µsec dv/dt TJ = 125°C, gate open 200 V/µse Minimum critical dv/dt exponential to VDRM Thermal Maximum thermal resistance, junction to case RθJC .14 °C/W Case to sink, lubricated RθCS 0.075 °C/W Gate – Maximum Parameters Gate current to trigger IGT TC = 25°C, VD = 6Vdc, RL = 3Ω 150 mA Gate voltage to trigger VGT TC = -40 to +125°C, VD = 6Vdc, RL = 3Ω 3.0 V VGDM TJ = 125°C, Rated VDRM, RL = 1000Ω 0.15 V Non-triggering gate voltage Rev. 20130123 High-reliability discrete products and engineering services since 1977 C180A-C180PC SERIES SILICON CONTROLLED RECTIFIERS ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) Characteristics Symbol Test Conditiions C180 Unit Peak forward gate current IGTM 10 A Peak reverse gate voltage VGRM 5 V MECHANICAL CHARACTERISTICS Case: TO-93 Marking: Body painted, alpha-numeric Polarity: Cathode band TO-93 A B C D E F G H J K L Inches NOMINAL 1.060 0.550 1.500 2.250 1.070 7.910 0.630 0.281 7.910 0.146 1.245 Millimeters NOMINAL 26.900 14.000 38.100 57.200 27.200 200.900 16.000 7.140 200.900 3.710 31.620 Rev. 20130123 High-reliability discrete products and engineering services since 1977 C180A-C180PC SERIES SILICON CONTROLLED RECTIFIERS Rev. 20130123 High-reliability discrete products and engineering services since 1977 C180A-C180PC SERIES SILICON CONTROLLED RECTIFIERS Rev. 20130123