GA200-GA201A SILICON CONTROLLED RECTIFIERS High-reliability discrete products and engineering services since 1977 FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Ratings Repetitive peak off state voltage Repetitive peak on state current DC on state current 70°C ambient 70°C case Peak gate current Average gate current Reverse gate current Reverse gate voltage Thermal resistance Storage temperature range Operating temperature range GA200 GA200A 60V Symbol VDRM ITRM IT GA201 GA201A 100V GB200 GB200A 60V Up to 100A 200mA 400mA 250mA 25mA 3mA 5V IGM IG(AV) IGR VGR RӨCA Tstg TJ GB201 GB201A 100V 6A 250mA 50mA 3mA 5V 300°C/W -65° to 200°C -65° to 150°C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Test Symbol Min. Typ. Max. - 20 10 15 25 10 20 30 25 20 - tpg(on) - 0.02 0.05 µs IG = 10mA, IT = 1A tq - 0.8 0.3 2.0 0.5 µs IT = 1A, IR = 1A, RGK = 1K - 0.01 0.1 µA VDRM = Rating, RGK = 1K - 20 100 µA VDRM = rating, RGK = 1K, 150°C Delay time td Rise time (GA200, GA200A, GB200, GB200A) tr Rise time (GA201, GA201A, GB201, GB201A) tr Gate trigger on pulse width Circuit commutated turn-off time (GA200, GA201, GB200, GB201) (GA200A, GA201A, GB200A, GB201A) Units ns ns ns Test Conditions IG = 20mA, IT = 1A IG = 30mA, IT = 1A VD = 60V, IT = 1A(1) VD = 60V, IT = 30A(1) VD = 100V, IT = 1A(1) VD = 100V, IT = 30A(1) Off-state current IDRM Reverse current IRRM - 1.0 10 mA VRRM = 30V, RGK = 1K(2) Reverse gate current IGR - 0.01 0.1 mA VGRM = 5V Gate trigger current IGT - 10 200 µA VD = 5V, RGS = 10K Gate trigger voltage VGT On-state voltage VT Holding current Off-state voltage - critical rate of rise IH dv/dt 0.4 0.6 0.75 V VD = 5V, RGS = 100Ω, T = 25°C 0.10 0.20 - V T = 150°C - 1.1 1.5 V IT = 2A 0.3 2.0 5.0 mA VD = 5V, RGK = 1K, T = 25°C 0.05 0.2 - mA T = 150°C 20 40 - V/µS VD = 30V, RGK = 1K Note 1: IG = 10mA, Pulse test: Duty cycle < 1%. Note 2: Pulse test intended to guarantee reverse anode voltage capability for pulse commutation. Device should not be operated in the reverse blocking mode on a continuous basis. Rev. 20130117 High-reliability discrete products and engineering services since 1977 GA200-GA201A SILICON CONTROLLED RECTIFIERS MECHANICAL CHARACTERISTICS Case TO-18 Marking Alpha-numeric Pin out See below Rev. 20130117 High-reliability discrete products and engineering services since 1977 GA200-GA201A SILICON CONTROLLED RECTIFIERS Rev. 20130117 High-reliability discrete products and engineering services since 1977 GA200-GA201A SILICON CONTROLLED RECTIFIERS Rev. 20130117