High-reliability discrete products and engineering services since 1977 MCR12D, MCR12M, MCR12N SILICON CONTROLLED RECTIFIERS FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Symbol Peak repetitive off-state voltage(1) Peak repetitive reverse voltage (TJ = -40 to +125°C) MCR12D MCR12M MCR12N VDRM VRRM On-state RMS current (all conduction angles) IT(RMS) Value Unit V 400 600 800 12 A Peak non-repetitive surge current (one half-cycle, sine wave, 60Hz, TJ = 125°C) ITSM Circuit fusing consideration (t = 8.3ms) I2t 41 A2s Peak gate power (pulse width ≤ 1.0µs, T C = 80°C) PGM 5 W Average gate power (t = 8.3ms, TC = 80°C) PG(AV) 0.5 W IGM 2 A Operating temperature range TJ -40 to +125 °C Storage temperature range Tstg -40 to +150 °C Peak gate current (pulse width ≤ 1.0µs, T C = 80°C) A 100 Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERMAL CHARACTERISTICS Symbol Maximum Unit Thermal resistance, junction to case Characteristic RӨJC 2.0 °C/W Thermal resistance, junction to ambient RӨJA 62.5 °C/W TL 260 °C Maximum lead temperature for soldering purposes 1/8” from case for 10s ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Characteristic Symbol Min Typ Max - - 0.01 2.0 - - 2.2 2.0 7.0 20 Unit OFF CHARACTERISTICS Peak forward blocking current Peak reverse blocking current (VAK = Rated VDRM or VRRM, gate open) TJ = 25°C TJ = 125°C IDRM, IRRM mA ON CHARACTERISTICS Peak on-state voltage* (ITM = 24A) VTM Gate trigger current (continuous dc) (VD = 12V, RL = 100Ω) IGT V mA Rev. 20130108 High-reliability discrete products and engineering services since 1977 Characteristic Gate trigger voltage (continuous dc) (VD = 12V, RL = 100Ω) Holding current (VD = 12V) MCR12D, MCR12M, MCR12N SILICON CONTROLLED RECTIFIERS Symbol Min Typ Max 0.5 0.65 1.0 4.0 25 40 50 200 - VGT Unit V IH mA DYNAMIC CHARACTERISTICS Critical rate of rise of off-state voltage (VD = rated VDRM, exponential waveform, gate open, TJ = 25°C) dv/dt V/µs * Pulse width≤ 2.0ms, duty cycle ≤ 2%. MECHANICAL CHARACTERISTICS Case: TO-220AB Marking: Body painted, alpha-numeric Pin out: See below Rev. 20130108