4767

SHD118545
SHD118545A
SHD118545B
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4767, REV. B
HERMETIC SCHOTTKY RECTIFIER
Low Forward Voltage Drop
Features:






Soft Reverse Recovery at Low and High Temperature
Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Maximum Ratings
Characteristics
Peak Inverse Voltage
Max. Average Forward Current
Symbol
VRWM
IF(AV)
Max. Average Forward Current
IF(AV)
Max. Peak One Cycle NonRepetitive Surge Current
Non-Repetitive Avalanche Energy
IFSM
Repetitive Avalanche Current
IAR
Maximum Thermal Resistance
(per leg)
RJC
DC operation
Max. Junction Temperature
Max. Storage Temperature
TJ
Tstg
-
EAS
Condition
50% duty cycle, rectangular
wave form (Single)
50% duty cycle, rectangular
wave form (Common Cathode)
8.3 ms, half Sine wave
(per leg)
TJ = 25 C, IAS = 3.0 A,
L = 4.4 mH (per leg)
IAS decay linearly to 0 in 1 s
 limited by TJ max VA=1.5VR
Max.
150
60
Units
V
A
120
A
860
A
20
mJ
3.0
A
3.2
C/W
-65 to +175
-65 to +175
C
C
Max.
0.91
0.75
1.5
Units
V
V
mA
24
mA
1500
pF
Electrical Characteristics
Characteristics
Max. Forward Voltage Drop
(per leg)
Max. Reverse Current
Symbol
VF1
VF2
IR1
(per leg)
IR2
Max. Junction Capacitance
(per leg)
CT
Condition
@ 60A, Pulse, TJ = 25 C
@ 60A, Pulse, TJ = 125 C
@VR = 150V, Pulse,
TJ = 25 C
@VR = 150V, Pulse,
TJ = 125 C
@VR = 5V, TC = 25 C
fSIG = 1MHz,
VSIG = 50mV (p-p)
2006 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681
PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected]
SHD118545
SHD118545A
SHD118545B
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4767, REV. B
MECHANICAL DIMENSIONS: In Inches / mm
.520±.020
SHD-5B
(13.2±.508)
.510±.020
SHD-5A
(12.9±.508)
.370±.010
(9.40±.254)
.370±.010
(9.40±.254)
.370±.010
(9.40±.254)
2
.125±.010
(3.17±.254)
.030±.010
(.762±.254)
.090±.010
(2.29±.254)
2
.610±.010
(15.5±.254)
2
.030±.010
(.762±.254)
.030±.010
(.762±.254)
3
.320±.010
(8.13±.254)
.610±.010
(15.5±.254)
.320±.010
(8.13 ±.254)
.610±.010
(15.5±.254)
3
3
.110 (2.80) Max
Alumina Ring
.110 (2.79) Max
.020±.005 R
(.508±.127 )
Moly Lid
Terminal 1
Copper Terminals
.130 (3.30) Max
Moly Lid
Alumina Ring
.020±.005 R
(.508±.127 )
Alumina Ring
.020±.002
(.508±.051)
Moly Base
Terminal 1
.060±.010
(1.52±.254)
1
2
3
PINOUT TABLE
DEVICE TYPE
PIN 1
DUAL RECTIFIER, COMMON CATHODE (P)
COMMON CATHODE
Note: The Vf curves shown are for the SD200SC150 unpackaged die only.
Typical Forward Characteristics
PIN 3
ANODE
Typical Reverse Characteristics
175 °C
125 °C
101
101
175 °C
150 °C
100
125 °C
10-1
100 °C
75 °C
10-2
50 °C
10
-3
25 °C
10-4
0
25 °C
100
Junction Capacitance - CT (pF)
Instantaneous Forward Current - I F (A)
PIN 2
ANODE
2
Instantaneous Reverse Current - I R (mA)
10
10-1
0.0
0.2
0.4
0.6
0.8
Forw ard Voltage Drop - V F (V)
1.0
20
40
60
80 100 120
Reverse Voltage - V R (V)
140
160
Typical Junction Capacitance
1400
1200
1000
25 °C
800
600
400
200
0
.015±.002
(.381±.051)
Moly Base
Terminal 1
.060±.010
(1.52±.254)
20
40
60
80 100 120
Reverse Voltage - V R (V)
140
160
2006 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681
PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected]
SENSITRON
SEMICONDUCTOR
SHD118545
SHD118545A
SHD118545B
TECHNICAL DATA
DATA SHEET 4767, REV. B

DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the
datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical
equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’
fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other pro
blems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at
a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron
Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder
maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When
exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.
2006 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681
PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected]
Similar pages