Application Information SIM6800M Series High Voltage 3-Phase Motor Driver ICs Introduction The SIM6800M series is an inverter power module which includes power MOSFETs or IGBTs, pre-driver IC, and bootstrap diodes with limit resistors in a single package. The device provides an ideal solution especially for small size inverter motors such as fans and pumps. These ICs take 230 VAC input voltage, and up to 5 A (continuous) output current. Figure 1 shows the functional block diagram of the device. High voltage power supply is applied between VBB and LSx. 15 V is applied between VCC1 and COM1, and VCC2 and COM2. Six signals, HIN1 through HIN3 and LIN1 through LIN3, control the on-off switching of the six internal power MOSFETs or IGBTs. These input signals are active high (xIN = High → MOSFET on). Boot capacitors should be connected between VB1A or VB1B and U, VB2 and V, and VB3 and W1, for high-side power supply. The device includes: OCP (overcurrent protection, activated for example at a short on the inverter bridge), TSD (thermal shutdown, activated for example at abnormal temperatures, or overloads), and UVLO (protection circuit for sudden drops of the controlling power supply voltage). Operation of these protection features can be monitored on the fault signal output pin, F̄¯¯Ō¯. There is a current limiter function for the MOSFET or IGBT control signal. When the current through a shunt resistor exceeds the threshold, the OCL pin goes high (active high). By connecting this signal to the SD pin, current limiter operation (high-side of MOSFETs or IGBTs turned off for 1 carrier PWM cycle) can be performed. Table 1. SIM6800M Series Lineups Power Device Rating Part Number SIM6812M SIM6813M SIM6822M SIM6827M (Max) Boot Resistance (Ω) Input Voltage (VAC) Note 2.4 60 200 – 1.7 60 200 – 60 200 RDS(ON) (Ω) Type Breakdown (V) Output (A) (Typ) MOSFET 500 2.5 2.0 MOSFET 500 3.0 1.4 IGBT 600 5.0 VCE(sat) (V) 1.75 2.2 Low noise Table of Contents Introduction Features Pin Functions Protection Functions Application Information Cautions and Warnings Package Diagram Performance Characteristics SIM6800-AN SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/ Low switching loss 1 2 4 7 12 13 14 15 Features gate signal at overcurrent conditions, such as output short-circuit and inverter bridge short-circuit, and to output an alarm signal. The output time of the alarm signal is set by an external resistor and capacitor. • Package: 40-pin DIP The SIM6800M series is packaged in a DIP package with 29 pins, which enables down-sizing and simple PCB layout. Pin pitch is 1.778 mm, with a 3.556 mm pitch separating adjacent high and low voltage pins. Pin width is 0.52 mm. Body thickness is 4.0 mm. • Gate shutdown function on both high- and low-side at abnormal operation Externally connecting the SD pin and the inverted F̄¯¯Ō¯ pin signal enables the device to shut down all high-side and low-side MOSFETs at abnormal conditions (when the F̄¯¯Ō¯ signal goes low), such as overheating, overcurrent, or controlling power supply voltage drop. • Three built-in high voltage bootstrap fast recovery diodes (FRD) diodes, each with current limiting resistor and capable of withstanding high voltages: 600 V at 0.5 A • OCL (Overcurrent Limiter) function (with shutdown (SD) input pin) • Built-in TSD (thermal shutdown) function, embodied in the low-side driver IC (MIC) When the current exceeds the maximum current level value, Vlim , to limit the current, the high-side MOSFETs or IGBTs are switched off for one PWM cycle at the carrier frequency. When the MIC chip temperature exceeds the set value, the gate input is shut down, and the device outputs an alarm signal. Temperature is monitored by the low-side MIC. • OCP (Overcurrent Protection) • Built-in protection circuit for controlling power supply voltage drop (UVLO) OCP is a function that shuts down the low-side MOSFET or IGBT VB1A VB1B VB2 VB3 SIM6800M VCC1 VBB UVLO HIN1 HIN2 HIN3 UVLO Input Logic UVLO UVLO High Side Level Shift Driver A A A HO W1 W2 V V1 V2 U COM1 SD VCC2 UVLO LIN 1 LIN 2 LIN 3 COM2 A Input Logic (OCP Reset) Thermal Shutdown A A Low Side LO Driver LS1 LS2 LS3A OCP OCP and OCL FO LS3B OCL OCP A IGBTs for SIM6822M and SIM6827M Figure 1. Functional Block Diagram SIM6800-AN SANKEN ELECTRIC CO., LTD. 2 The device monitors each controlling supply voltage: VCC1, VCC2, and VBx. If any of these voltages falls below the undervoltage threshold, the gate is shut down. If the VCC2 voltage falls below the undervoltage threshold, the F̄¯¯Ō¯ signal is asserted. • RoHS compliance • Alarm signal output (indicating shut down) while protection circuit is in operation The SIM6800M series has six MOSFET or IGBT chips , two drive ICs, and three bootstrap fast recovery diodes mounted on a copper leadframe. Gold wires connect from chip to chip, and from chip to leadframe. The case is molded epoxy resin. Part number and lot number are printed on the surface of the case. Figure 2 shows the package exterior. RoHS compliant (Pb free) for pin solder and internal solder. • Structure Operates on the low, through the F̄¯¯Ō¯ pin, an open collector output. When TSD, OCP, or UVLO protection for controlling power supply voltage VCC2 drop are activated, the internal transistor turns on and drives the F̄¯¯Ō¯ pin low. Figure 2. SIM6800M Package Structure: external view VB1A VB3 W1 V1 VBB U VB1B (LS2) V2 W2 LS3B 33.7 VB2 V VCC1 HIN3 COM1 HIN2 SD HIN1 OCL LS1 LIN3 LIN2 LIN1 FO 20 VCC2 COM2 1 LS2 OCP 21 LS3A 40 17.4 36 1.8 4 7.6 14.6 0.52 (0° to 15°) 0.42 1.778 Figure 3. SIM6800M Package Outline Drawing SIM6800-AN SANKEN ELECTRIC CO., LTD. 3 Pin Functions 9 VB1A VB3 W1 V1 VBB VB1B 10 11 12 13 14 15 16 17 VB2 8 21 V LIN3 7 VCC1 LIN2 6 24 23 COM1 LIN1 5 HIN3 COM2 4 26 HIN2 VCC2 3 HIN1 FO 2 28 SD OCP 1 LS1 LS2 (LS2) V2 31 30 LS3A LS3B 33 U 35 OCL 37 W2 40 19 20 To keep sufficient distance between high and low voltage pins, or between high-voltage pins with different electric potentials, one pin each is removed between: pin 17 (VCC1) and pin 19 (V), pin 21 (VB1A) and pin 22 (VB3), pin 24 (W1) and pin 26 (V1), pin 26 (V1) and pin 28 (VBB), pin 28 (VBB) and pin 30 (VB1B), pin 31 (U) and pin 33 (LS2), pin 33 (LS2) and pin 35 (V2), and pin 35 (V2) and pin 37 (W2), and two pins between pin 37 (W2) and pin 40 (LS3B). Table 2. Pin List Table Number Name 1 LS3A 2 LS2 Function Source pin, W phase (MOSFET) Emitter pin, W phase (IGBT), connected to LS3B internally Source pin, V phase (MOSFET) Emitter pin, V phase (IGBT) (pin 33 has same function, but is trimmed) Number Name Function 17 VCC1 – Pin deleted High-side logic supply voltage 3 OCP Input for overcurrent protection 18, 22, 25, 27, 29, 32, 34, 36, 38, 39 4 ¯¯Ō ¯ F̄ Fault signal output; active low 19 V High-side bootstrap negative pin (V phase) 5 VCC2 Low-side logic supply voltage 20 VB2 High-side bootstrap positive pin (V phase) 6 COM2 Low-side logic GND pin 21 VB1A High-side bootstrap positive pin (U phase), connected to VB1B internally 7 LIN1 Low-side input pin (U phase) 23 VB3 High-side bootstrap positive pin (W phase) 8 LIN2 Low-side input pin (V phase) 24 W1 Output of W phase (connect to W2 externally) Output of V phase (connect to V2 externally) 9 LIN3 Low-side input pin (W phase) 26 V1 10 OCL Overcurrent limiting (OCL) signal output 28 VBB Main supply voltage 11 LS1 Source pin, U phase (MOSFET) Emitter pin, U phase (IGBT) 30 VB1B High-side bootstrap positive pin (U phase), connected to VB1A internally 12 SD High-side shutdown input 31 U 13 HIN1 High-side input pin (U phase) 33 (LS2) 14 HIN2 High-side input pin (V phase) 35 V2 Output of V phase (connect to V1 externally) 15 HIN3 High-side input pin (W phase) 37 W2 Output of W phase (connect to W1 externally) 16 COM1 High-side logic GND pin 40 LS3B SIM6800-AN Output of U phase Source pin, V phase (MOSFET) Emitter pin, V phase (IGBT) (pin trimmed, see pin 2 for same function) Source pin, W phase (MOSFET) Emitter pin, W phase (IGBT), connected to LS3A internally SANKEN ELECTRIC CO., LTD. 4 Table 3. Equivalent Circuits for Input and Output Pins Pin Number Pins Input or Output 21(30) 20 23 VB1A(VB1B) VB2 VB3 Regulator 17 VCC1 Regulator Equivalent Circuit VBx (High side) U, V, W High-side drive circuit VCC1 COM1 VCC2 5 VCC2 Regulator REG UVLO REG UVLO Boot Diode, DBx Low-side drive circuit COM2 13 14 15 7 8 9 HIN1 HIN2 HIN3 LIN1 LIN2 LIN3 2 kΩ Input HINx, LINx 20 kΩ COMx 2 kΩ 12 SD Input 5V 2 kΩ SD 5V 2 kΩ Filter 3.3 µs To Shutdown 1 MΩ COM1 5V 100 Ω 10 OCL Output 200 kΩ OCL COM2 5V Shut down 4 ¯¯Ō ¯ F̄ Input, Output 1 MΩ 50 Ω FO COM2 5V 2 kΩ 3 OCP Input OCP OCL OCP 200 kΩ COM2 SIM6800-AN SANKEN ELECTRIC CO., LTD. 5 Descriptions of input and output pins The following are explanations for the input and output pins (please refer to figure 18): • VBB pin This is the main supply voltage pin. Note: In order to reduce surge voltages, it is recommended to use a snubber capacitor, CS in figure 18, of 0.01 to 0.1 μF between VBB and COM. In order to achieve better effectiveness of the snubber capacitor, please make the capacitor PCB trace as short as practicable, and place it between the IC and an additional electrolytic capacitor. VBB is a high voltage pin. Please provide sufficient separation from other traces or consider using overcoating material. In addition, the main current flows through VBB. Please make these traces as wide as possible. • U, V, V1, V2, W1, W2 pins These pins are connected to the motor. Because V1 and V2, and W1 and W2, are not connected to each other internally in the IC, please connect those pins on the PCB. Because these output pins have high voltage, please provide sufficient separation from other traces or consider using overcoating material. Note: Because the V pin is internally connected the V1 pin, there is no requirement to connect these two pins to each other externally. The V pin is used to connect the bootstrap capacitor. Please do not connect this pin to the motor. Because the main current flows through the U, V1, V2, W1, and W2 pins, please make the traces wide for these pins. • LS1, LS2, LS3A (LS3B) pins These are GND pins and shunt resistor sensing pin of the main power supply. Please connect the current detection shunt resistor(s) between these pins and the COM pins. Because LS3A and LS3B are connected internally, it is not necessary to connect them externally. You can either use LS3A or LS3. By inputting a current detection signal into the OCP pin, the current limiter circuit function and overcurrent protection are enabled. The LSx pins and the shunt resistor should be connected with the shortest possible trace length. If the trace is long, it will be a factor for malfunctions due to parasitic inductance. Please make the connection between the LSx and COM pins low impedance (the LSx potential is less than –3 V when a motor drive is operating). • VB1A (VB1B), VB2, VB3 pins These are pins to connect the bootstrap capacitors for the highside controlling supply voltage. Please connect individual capacitors, CBOOTx , between VB1A(VB1B) and U, VB2 and V, and VB3 and W1. VB1A is internally connected to VB1B. Connect to either VB1A or VB1B. SIM6800-AN In order to avoid effects of external noise, please place these capacitors very near to the IC. In addition, please use ceramic capacitors which have good high frequency response. The bootstrap capacitors are charged from the VB pins, which are supplied through the VCC1 pin, the bootstrap diodes, DB , inside the IC, and the in-rush current limiter boot resistors, RB . The time constant for charging is RB × CB . • VCC1, VCC2 pins These are the control power supply voltage pins. Please connect both VCC1 and VCC2 to 15 V. To avoid malfunction or damage by power supply ripple or external surges, please put ceramic capacitors, CBYP , of 0.01 to 0.1 μF near the pins. In addition, if surge voltage could exceed 20 V, it is recommended to use a Zener diode, DZ (VZ = 18 to 20 V) . • HIN1, HIN2, HIN3, LIN1, LIN2, and LIN3 pins These are the input pins for MOSFET or IGBT control. Threshold voltage is set for the use of both 3.3 V and 5 V inputs. In case external noise becomes significant or wire connections are long, please consider using an RC filter, as shown in figure 4 (RA = 50 to 300 Ω , C = 100 to 1,000 pF), or a pull-down resistor (RPD ≈ 4.7 to 10 kΩ). • SD pin This input pin is used to shut down the high-side output MOSFETs. The pin is active high, and when a high signal (3.3 or 5 V) is applied, those MOSFET gates are shut down. By connecting OCL to the SD pin externally, current limiter operation is enabled (figure 6 shows the timing diagram for the current limiter function). There is an internal filter of 3.3 μs (typ) on the SD pin. Pulses input from the OCL pin that are narrower than that are considered noise, and the gates are not shut down. If a pulse is wider than 3.3 μs, the gates are shut down. When the gates are shut down, the current flowing through the shunt resistor becomes 0 A, and the OCL signal goes low (0 V), However, each high-side MOSFET remains off until the corresponding HIN signal transitions from low to high, until a positive (rising) signal edge comes (referred to as edge operation). By connecting the SD pin and the inverted F̄¯¯Ō¯ pin signal, all high-side and low-side MOSFETs can be shut down when an abnormal circumstance occurs, such as overheating, overcurrent, or undervoltage on the control supply voltage. System Control IC （MCU） RA RPD SIM6800M Figure 4. External Noise Reduction Circuit; for HIN and LIN input pins SANKEN ELECTRIC CO., LTD. 6 • OCL, OCP pins As shown in figure 5, the OCP pin can be used to control the OCL pin. The LSx pins are externally connected to the OCP pin; if the connection is not made, the OCL and OCP functions are not enabled. If the voltage at the LSx pins is kept higher than 0.65 V (typ) for 2 μs (typ), the output voltage at the OCL pin goes high (5 V). When OCL is connected to the SD pin, it operates as a current limiter (see figure 6 for current limiter timing). • F̄¯¯Ō¯ pin An internal transistor on the F̄¯¯Ō¯ output pin is turned on by the protection circuits due to overcurrent, overtemperature, or for undervoltage on the control supply voltage, VCC2 . At the same time, the low-side MOSFETs or IGBTs are shut down. After the fault condition is released, the LO operates according to LIN (logic level operation). 0.65 V OCP – + 2 kΩ 200 kΩ COM2 OCL Filter 2 μs (typ) Please connect a pull-up resistor, RFO = 3.3 to 10 kΩ, and a capacitor for noise malfunction prevention, CFO = 0.001 to 0.01 μF, to the F̄¯¯Ō¯ pin. Protection Functions The following are descriptions and timing charts of the operation of protection functions for the SIM6800M series. Protection circuit for controlling power supply voltage drop (undervoltage lockout, UVLO) If gate drive voltage of the output MOSFETs becomes insufficient, there is greater MOSFET power dissipation, and in the worst case, the IC may be damaged. In order to avoid this, a protection circuit for controlling power supply voltage drop is incorporated. The control IC (MIC) monitors the high-side voltage: between VCC1 and COM1, VB1A(VB1B) and U, VB2 and V, and VB3 and W1 (the MIC also monitors the low-side voltage, between VCC2 and COM2). As shown in figure 7, after VB exceeds the VUVHH rated value, 10.5 V (typ), at the next positive (rising) edge on HIN (edge operation), an output-on pulse appears at HO (the gates of the high-side output MOSFETs). When VB goes below Figure 5. Equivalent Circuit from OCP to OCL HINx LINx High-side gate shut down HO (high-side MOSFET or IGBTgate) 3.3 μs 3.3 μs Low-side gate shut down (OCP) LO (low-side MOSFET or IGBT gate) VTRIP (1V) LSx VLIM 2 μs 2 μs 2 μs OCL and SD 20 μs(min) FO Figure 6. Timing Chart of Current Limiter Operation SIM6800-AN SANKEN ELECTRIC CO., LTD. 7 the VUVHL rated value, 10 V (typ), the high-side MOSFETs are shut down. When the voltage between VCC1 and COM1 goes below VUVLL , 11 V (typ), which applies on both of VCC1 and VCC2 UVLO conditions, the high-side MOSFETs are shut down. After a shutdown, when the power supply voltage rises and exceeds VUVLH , 11.5 V (typ), at the next positive (rising) edge (edge operation), an output-on pulse appears at HO. Note: When power MOSFET output is shut down according to UVLO operation due to a voltage drop on the high side, the fault is not reflected at the F̄¯¯Ō¯ output. Figures 8 and 9 show the internal equivalent circuit of the UVLO detection features on the high-side control power supply, on the VB and VCC1 pins. As shown in the figures, internal filters are provided to eliminate line noise. When the voltage between VCC2 and COM2 goes below VUVLL , 11 V (typ), the low-side MOSFETs are shut down and the open collector internal transistor on the F̄¯¯Ō¯ pin turns on. When VCC2 rises and exceeds VUVLH , 11.5V(typ), the shut down of the lowside MOSFETs is released and internal transistor on the F̄¯¯Ō¯ pin turns off. After the fault condition is released, the F̄¯¯Ō¯ transistor operates according to LIN (logic level operation), see figure 10. The low-side UVLO circuit has an internal filter to eliminate line noise, similar to the high-side UVLO circuit. HIN VCC1 VUVLH VUVLL VB to VUVHH High Side (U,V,W) VUVHH VUVHL HO Figure 7. Timing Chart of High-Side UVLO Operation SET pulse FF S Q RESET pulse R VREF VB MOSFET or IGBT gate to high-side drive circuit HIN VREF VCC1 Filter RESET pulse FF S Q R Comparator + – SET pulse Pulse Generator MOSFET or IGBT gate to high-side drive circuit Comparator + – Filter U,V,W Figure 8. High-Side UVLO Internal Equivalent Circuit at VB SIM6800-AN Figure 9. High-Side UVLO Internal Equivalent Circuit at VCC1 SANKEN ELECTRIC CO., LTD. 8 As mentioned above, this IC contains filters against steep drops in the control voltages: VB, VCC1, and VCC2. However, there are possibilities of malfunction due to line noise or IC damage in the event excessive voltage is applied, a filter time-constant is exceeded, or only VCC1 drops but VB is retained, and so forth. Therefore, please place an external ceramic capacitor, CBYP , of 0.01 to 0.1 μF and a Zener diode, DZ (VZ = 18 to 20 V) near the power supply pins. (typ), the low-side MOSFETs are shut down, and when the temperature goes below 120°C (typ), the shutdown is released and the IC operates according to the LIN signals. Note: Because the die temperature of the power MOSFETs is NOT directly monitored, damage to the IC by overheating cannot be fully prevented. Please note that there may be some delay in temperature detection, such as in cases when the MOSFET temperature is increased abruptly, until the heat reaches the monitors. Thermal Shutdown (TSD) The SIM6800M series contains a Thermal Shutdown circuit. In the event the IC is overheated by an increase of power consumption due to overload or an increase of ambient temperature, the low-side power MOSFETs are shut down, and the internal open collector transistor on the F̄¯¯Ō¯ pin is turned on. Table 4 provides the TSD temperature parameters. Detection is done by the low-side MIC. When the temperature exceeds 150°C Table 4. Thermal Protection (TSD) Levels Low-Side MIC Temperature (°C) Symbol Min. Typ. Max. TSD Enable TDH 135 150 165 TSD Release TDL 105 120 135 TDHYS – 30 – TSD Hysteresis LIN VCC2 VUVLH VUVLL VUVLH LO FO Open collector transistor turns on at low Figure 10. Timing chart of low-side UVLO operation LIN Tlow-side IC TDH TDL LO FO Open collector transistor turns on at low Figure 11. Timing Chart of Thermal Protection (TSD) Operation (TMIC is the temperature monitored at the low-side MIC) SIM6800-AN SANKEN ELECTRIC CO., LTD. 9 Over Current Protection (OCP) The SIM6800M series contains an Overcurrent Protection function. Figure 12 shows the internal equivalent circuit structure for OCP. If the voltage between LSx and COM exceeds VTRIP , 1.0 V (typ), for the blanking time, tBK , 2 μs (typ), OCP operation is started. At the start of OCP operation, at the same time as an internal transistor on the F̄¯¯Ō¯ pin (connected to F̄¯¯Ō¯ through a 50 Ω resistor) turns on, the gates of the low-side output MOSFETs are shut down. OCP operation is continued for a period of 25 μs (typ) after the OCP pin voltage becomes less than 1 V. After the 25 μs period has passed, the gate shutdown is released, and the transistor of the F̄¯¯Ō¯ pin turns off. After that, the IC operates according to the LIN signals. There is an internal circuit that shuts down the MOSFET gates when the F̄¯¯Ō¯ pin is low. The F̄¯¯Ō¯ Recovery time, the delay in return from OCP mode to normal operation, is adjustable by an external pull-up resistor, RFO , on the F̄¯¯Ō¯ pin. If it is required to extend the MOSFET shutdown period beyond the 25 μs (typ) of OCP, it can be extended by increasing the value of RFO or not inserting RFO. For more information, please refer to the Implementing Adjustable F̄¯¯Ō¯ Recovery Time section. 1 MΩ MOSFET Shut down 2 kΩ VREF (1 V) ー OCP OCP ＋ Filt er 2 μs FF S Q Timer 25 μs FO 50 Ω R Figure 12. OCP Internal Equivalent Circuit LIN LO LS VTRIP (1V) ＜2 μs 2μs 25 μs (min) FO Figure 13. Timing Chart of Overcurrent Protection (OCP) Operation SIM6800-AN SANKEN ELECTRIC CO., LTD. 10 ¯¯Ō ¯ Recovery Time Implementing Adjustable F̄ This IPM has a function to adjust F̄¯¯Ō¯ recovery time using an external pull-up resistor and a capacitor added at the F̄¯¯ Ō¯ pin. Figure 14 is an example for the implementation. Using this implementation the recovery time from an OCP mode to the normal operation can be increased. If the port of the MCU connected to F̄¯Ō¯ has an internal pull-down resistor, the following calculation can be used: 3.3 or 5 V SIM6800M where5 V 1 MΩ Shut down RFO RES FO 50 Ω CFO COM2 VFO × RIN /[(1×106 ×RFO) / (1×106 + RFO) + RIN] ≥ Vth MCU RIN GND ¯¯Ō ¯ Internal Equivalent Circuit; demonstrating Figure 14. F̄ RFO and CFO implementation LIN Protection feature operation FO recovery time LO Filter 3.3 μs (typ) Filter 3.3 μs (typ) 2 V (typ) FO 3.0 3.0 2.5 2.5 FO Recovery Time (ms) FO Recovery Time (ms) ¯¯Ō ¯ Recovery Figure 15. Timing Chart for F̄ 2.0 1.5 1.0 0.5 2.0 1.5 1.0 0.5 0 0 0 200 400 600 800 1000 0 0.002 ¯¯Ō ¯ Recovery Time Versus RFO; CFO = 0.01 μF, VFO = 5 V Figure 16. F̄ SIM6800-AN 0.004 0.006 0.008 0.010 CFO (μF) Rfo [k Ω] ¯¯Ō ¯ Recovery Time Versus CFO; RFO = 1 MΩ, VFO = 5 V Figure 17. F̄ SANKEN ELECTRIC CO., LTD. 11 Application Information • Place a ceramic capacitor, CFO (0.001 to 0.01 μF) between the F̄¯¯Ō¯ and COM2 pins to avoid malfunction due to noise. Figure 18 is an example of a typical application circuit. • Please be sure to connect W1 and W2, and V1 and V2, on the printed circuit board. • When the current limiter is not used, please leave the OCL pin open, and the SD pin open or connected to GND (when significant external noise is expected). • Although the F̄¯¯Ō¯ pin has an internal pull-up resistor of 1 MΩ, please connect a pull-up resistor RFO between the F̄¯¯Ō¯ pin and a 5 V or 3.3 V power supply in consideration a noise reduction capability. Please note, if the F̄¯¯Ō¯ pin is connected to the 5 V or 3.3 V without the pull-up resistor, the thermal protection (TSD) function is disabled (low-side UVLO protection and Overcurrent Protection functions remain enabled). VB1A VB1B VB2 • Make the PCB circuit layout between the bootstrap capacitors, CBOOTx (≈ 1 μF) and the IC as short as possible to avoid malfunction due to noise. • Place a ceramic capacitor, CBYP (0.01 to 0.1 μF) between VCC1 and COM1, as well as VCC2 and COM2, to avoid malfunction due to noise. Make the PCB circuit layout between these capacitors and the IC as short as possible. • Make the PCB circuit layout between current sense resistor, RS , inserted between LSx and COM2, and the IC as wide and as short as possible to avoid malfunction due to noise. VB3 DC-link 15V VBB VCC1 UVLO UVLO UVLO UVLO CBOOT1 HIN1 HIN2 HIN3 Input Logic High Side Level Shift Driver COM1 SD VCC2 CBOOT2 CBOOT3 W1 W2 V V1 V2 U W V U Controller UVLO LIN1 LIN2 LIN3 5V RFO Input Logic (OCP reset) Low Side Driver COM2 FO Thermal Shutdown BLDCM OCP OCP and OCL LS1 LS2 LS3A LS3B OCL Ro OCP Co CBYP CFO RS CS COM Figure 18. Typical Application Circuit; with a 5 V MCU (with current limiter configured) SIM6800-AN SANKEN ELECTRIC CO., LTD. 12 Cautions and Warnings • Power supply sequence • Surge suppression Powering-on the IC has no specific sequencing requirements. However, please ensure that the minimum controlling voltage, VCC , has been established before sending input to the HIN or LIN pins. Please reduce applied surges to each pin by adding ceramic capacitors or Zener diodes, or other measures. Surges may cause not only malfunction but also damage the IC. Make sure to fully consider this point. • Short-circuit protection • Input dead-time This IC does not contain a protection circuit for ground-fault. Please make sure not to cause ground-fault mode. • Distance between pins Please set dead-time externally (no internal setting), so as not to cause shoot-through (high to low short-circuit). 1.5 μs or longer is recommended for the SIM6800M series. The SIM6800M series uses a DIP 40-pin package and the distance between the pins is 1.778 mm pitch. It is recommended to apply overcoating or overmolding between the pins and on the PCB. • To minimize interference between the current loop at the high voltage rail (VBB) and the +15 V power rail, the grounds for both power rails should be connected together on the PCB at a single point that is close to the frame ground or earth ground. SIM6800-AN SANKEN ELECTRIC CO., LTD. 13 Package Diagram A 7.6±0.4 21 4X Gate area 17.4±0.5 2-R0.5 1 20 33.7±0.3 Ø3.2±0.2 (4°) Pin 1 Index 16.7 TYP 14.8±0.3 5 A +0.1 0.42 –0.05 40 1.15 MAX SIM package 1.8±0.1 A Case temperature test point on branded surface, aligned with pin 14 at 5 mm from case side. Pb-free. Device composition compliant with the RoHS directive. SIM6800-AN SANKEN ELECTRIC CO., LTD. 14 Performance Characteristics Applicable to all SIM6800 series 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 –25 Supply Current (On) versus Junction Temperature VCC = 15 V, VIN = 5 V MAX ICC(off) (mA) ICC(off) (mA) Supply Current (Off) versus Junction Temperature VCC = 15 V, VIN = 0 V TYP MIN 0 25 50 75 100 125 150 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 –25 MAX TYP MIN 0 25 TJ (°C) 75 100 125 150 TJ (°C) Boot Current (off) versus Junction Temperature VB = 15 V, one VHIN1 = 0 V Boot Current (off) versus Junction Temperature VB = 15 V, VHIN1 = 0 V 300 300 250 250 200 200 IBOOT (μA) IBOOT (μA) 50 MAX 150 TYP 100 MIN 50 MAX TYP 150 MIN 100 50 0 0 –25 0 25 50 75 100 125 –25 150 0 25 50 75 100 125 150 TJ (°C) TJ (°C) Supply Current versus Supply Voltage VCC = 15 V 3.6 3.4 TJ = 125°C ICC (mA) 3.2 3.0 2.8 TJ = 75°C TJ = 25°C 2.6 2.4 2.2 2.0 12 13 14 15 16 17 18 19 20 VCC (V) High-Side Input Current versus Junction Temperature VIN = 5 V 180 160 140 120 100 80 60 40 20 TJ = 125°C TJ = 75°C TJ = 25°C 12 13 14 15 16 17 18 19 20 IINH (μA) IBOOT (μA) Boot Current (off) versus High Side Supply Voltage VB = 15 V, MOSFETs off 500 450 400 350 300 250 200 150 100 50 0 –25 MAX TYP MIN 0 VB (V) SIM6800-AN 25 50 75 100 125 150 TJ (°C) SANKEN ELECTRIC CO., LTD. 15 Applicable to all SIM6800 series 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 –25 MAX Low-Side Input Voltage versus Junction Temperature VIL (V) VIH (V) High-Side Input Voltage versus Junction Temperature TYP MIN 0 25 50 75 100 125 150 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 –25 MAX TYP MIN 0 25 800 750 700 650 600 550 500 450 400 350 300 Input Delay versus Junction Temperature VHIN to VHO –25 MAX TYP MIN 0 25 50 75 100 125 800 750 700 650 600 550 500 450 400 350 300 –25 150 Minimum On-Time (High-Side) versus Junction Temperature MAX TYP MIN 0 25 50 75 125 150 MAX TYP MIN 0 25 50 75 100 125 150 100 125 150 500 450 400 350 300 250 200 150 100 50 0 –25 Minimum On-Time (Low-Side) versus Junction Temperature MAX TYP MIN 0 TJ (°C) SIM6800-AN 100 TJ (°C) tON (ns) tON (ns) –25 75 Input Delay versus Junction Temperature VLIN to VLO TJ (°C) 500 450 400 350 300 250 200 150 100 50 0 50 TJ (°C) VIN Delay (ns) VIN Delay (ns) TJ (°C) 25 50 75 100 125 150 TJ (°C) SANKEN ELECTRIC CO., LTD. 16 Applicable to all SIM6800 series High-Side UVLO Release Threshold versus Junction Temperature 1200 12.0 1000 11.5 800 600 High Side 400 TYP MIN 10.5 10.0 9.5 9.0 Low Side 200 8.5 0 0 12.0 200 400 600 800 1000 8.0 –25 1200 0 25 75 Low-Side UVLO Release Threshold versus Junction Temperature 13.0 VUVLH (V) 10.5 TYP MIN 10.0 9.5 11.0 10.5 10.0 8.5 9.5 0 25 50 75 100 125 9.0 –25 150 TYP MIN 11.5 9.0 8.0 0 25 TJ (°C) tVB(UVLO FIlter) (μs) TYP 11.0 MIN 10.0 9.5 9.0 –25 0 25 50 75 100 125 150 4 125 150 MAX 3 TYP 2 MIN 1 0 –25 0 TJ (°C) SIM6800-AN 100 5 MAX 10.5 75 High-Side UVLO Filter Delay versus Junction Temperature 12.5 11.5 50 TJ (°C) Low-Side UVLO Enable Threshold versus Junction Temperature 12.0 150 MAX 12.0 MAX 13.0 125 High-Side UVLO Enable Threshold versus Junction Temperature 12.5 –25 100 TJ (°C) 11.0 VUVLL (V) 50 tTBD (ns) 11.5 VUVHL (V) MAX 11.0 VUVHH (V) tTBD (ns) Output Gate Pulse Width versus Input Pulse Width Typical, TJ = 25°C, VCC = 15 V 25 50 75 100 125 150 TJ (°C) SANKEN ELECTRIC CO., LTD. 17 Applicable to all SIM6800 series Overcurrent Limit (High) versus Junction Temperature Low-Side UVLO Filter Delay versus Junction Temperature 0.69 0.68 4 MAX 3 TYP 2 MAX 0.67 VLIMH (V) tVCC(UVLO FIlter) (μs) 5 MIN TYP 0.66 0.65 MIN 0.64 0.63 1 0.62 0 –25 0.61 0 25 50 75 100 125 –25 150 0 25 Overcurrent Trip Voltage (High) versus Junction Temperature 75 100 125 150 Overcurrent Blanking TIme versus Junction Temperature 1.10 2.8 2.6 MAX 1.05 TYP 1.00 2.2 2.0 TYP 1.8 1.6 MIN 0.95 MAX 2.4 tBK (μs) VTRIPH (V) 50 TJ (°C) TJ (°C) MIN 1.4 1.2 0.90 –25 0 25 50 75 100 125 1.0 150 –25 0 25 TJ (°C) 5.4 tVB(UVLO FIlter) (μs) tP (μs) 30 TYP 25 20 MIN 15 10 5 0 –25 125 150 MAX 5.3 5.2 TYP 5.1 5.0 MIN 4.9 4.8 0 25 50 75 100 125 150 –25 0 TJ (°C) SIM6800-AN 100 OCL Pin Output Voltage versus Junction Temperature MAX 35 75 TJ (°C) OCP Hold-Time versus Junction Temperature 40 50 25 50 75 100 125 150 TJ (°C) SANKEN ELECTRIC CO., LTD. 18 Applicable to all SIM6800 series FO Input Voltage (On) versus Junction Temperature FO Intput Voltage (Off) versus Junction Temperature 2.5 2.5 MAX 2.0 TYP MIN 1.5 VFOL (V) VFOH (V) 2.0 1.0 0.5 TYP 1.0 MIN 0.5 0 –25 MAX 1.5 0 0 25 50 75 100 125 150 –25 0 25 TJ (°C) 6 500 3 TYP 2 MIN 0 0 75 100 125 MIN 0 25 Note: FO is both an input pin and an Output pin SD Input Voltage (On) versus Junction Temperature 2.6 3.2 50 75 100 MAX 2.8 TYP 2.4 MIN 0 25 50 75 100 SD Input Voltage (Off) versus Junction Temperature MAX TYP 1.8 MIN 125 150 1.0 –25 0 TJ (°C) SIM6800-AN 150 1.4 2.0 –25 125 TJ (°C) 2.2 VSDL (V) VSDH (V) MAX TYP –25 150 TJ (°C) 3.6 150 FO Output* Voltage versus Junction Temperature VFO pulled up to 5 V, RFO = 3.3 kΩ. FO = VFOL 200 100 50 125 300 1 25 100 400 MAX 4 VFO (mV) tFO Delay (μs) 5 0 75 TJ (°C) FO Input Filter Delay versus Junction Temperature –25 50 25 50 75 100 125 150 TJ (°C) SANKEN ELECTRIC CO., LTD. 19 Applicable to all SIM6800 series SD Input Filter Delay versus Junction Temperature 5 9 7 MAX 3 IINH (μA) tSD(FIlter) (μs) MAX 8 4 TYP 2 MIN TYP 6 5 MIN 4 3 2 1 0 –25 SD Input Current versus Junction Temperature VSD = 5 V 1 0 0 25 50 75 100 125 150 –25 0 SIM6800-AN 25 50 75 100 125 150 TJ (°C) TJ (°C) SANKEN ELECTRIC CO., LTD. 20 SIM6812M MOSFET Characteristics SIM6812M MOSFETOn-Resistance On-Resistanceversus versusDrain DrainCurrent Current MOSFET VGS = 15 = 15 VV VGS SIM6812M MOSFETSource On-Resistance Current MOSFET to Drain versus CurrentDrain versus Voltage VVGS = 0 V = 0 V GS 6.0 2.5 5.0 TJ = 75°C 3.0 2.0 TJ = 125°C 1.5 ISD (A) RDS(on) (Ω) 2.0 TJ = 125°C 4.0 TJ = 75°C 1.0 TJ = 25°C TJ = 25°C 0.5 1.0 0 0 0 0.5 1.0 1.5 2.0 2.5 0 0.2 0.4 0.6 ID (A) Switching LossID(Tc=25°C) versus Drain Current SWloss= 25°C, V = 300 V, VCC = 15 V T C BB VBB=300V, VCC=15V 250 150 Eon(Low side) 1.2 1.4 Eon(High side) 250 Eoff(High side) 200 Eon(Low side) E (uJ) E (uJ) Eoff(High side) 1.0 Switching Loss ID(Tc=125 versus Drain SWloss°C) Current T = 125°C, V = 300 V, V C BB CC = 15 V VBB=300V, VCC=15V 300 Eon(High side) 200 0.8 VSD (V) Eoff(Low side) Eoff(Low side) 150 100 100 50 50 0 0 0.0 0.5 1.0 ID (A) 1.5 2.0 Recovery Loss versus Drain Current Recoveryloss - ID(Tc=25°C) TC = 25°C, VBB = 300 V, VCC = 15 V VBB=300V, VCC=15V 20 0.0 2.5 20 ID (A) 1.5 2.0 2.5 Highside 15 Lowside E (uJ) E (uJ) Lowside 10 10 5 5 0 0 0 SIM6800-AN 1.0 Recovery Loss versus Drain Current Recoveryloss - ID(Tc=125°C) TC = 125°C, VBB = 300 V, VCC = 15 V VBB=300V, VCC=15V Highside 15 0.5 0.5 1 ID (A) 1.5 2 2.5 0 SANKEN ELECTRIC CO., LTD. 0.5 1 ID (A) 1.5 2 2.5 21 SIM6813M MOSFET Characteristics SIM6813M MOSFET On-Resistance versus Drain Current MOSFET On-Resistance versus Drain Current VGS = 15 = 15 VV VGS 3.0 TJ = 125°C 2.5 TJ = 125°C 2.0 TJ = 75°C ISD (A) RDS(on) (Ω) 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 SIM6813M MOSFETSource On-Resistance Current MOSFET to Drain versus CurrentDrain versus Voltage VVGS = 0 V = 0 V GS TJ = 25°C TJ = 75°C 1.5 1.0 TJ = 25°C 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.2 0.4 ID (A) Switching LossID(Tc=25°C) versus Drain Current SWloss25°C, VBB = 300 V, VCC = 15 V TC =VCC=15V VBB=300V, 300 Eon(Low side) E (uJ) E (uJ) 1.2 Eoff(High side) 200 Eon(Low side) Eoff(Low side) 150 1.0 Eon(High side) 250 Eoff(High side) 200 0.8 Switching Loss ID(Tc=125 versus Drain SWloss°C) Current TC =VCC=15V 125°C, VBB = 300 V, VCC = 15 V VBB=300V, 300 Eon(High side) 250 0.6 VSD (V) Eoff(Low side) 150 100 100 50 50 0 0 0.0 0.5 1.0 1.5 ID (A) 2.0 2.5 Recovery Loss versus Drain Current Recoveryloss - ID(Tc=25°C) TC = 25°C, VBB = 300 V, VCC = 15 V VBB=300V, VCC=15V 25 0.0 3.0 1.0 1.5 ID (A) 2.0 2.5 3.0 Recovery Loss versus Drain Current Recoveryloss - ID(Tc=125°C) TC = 125°C, VBB = 300 V, VCC = 15 V VBB=300V, VCC=15V 25 Highside Highside 20 0.5 20 Lowside E (uJ) E (uJ) Lowside 15 15 10 10 5 5 0 0 0 SIM6800-AN 0.5 1 1.5 ID (A) 2 2.5 3 0 0.5 SANKEN ELECTRIC CO., LTD. 1 1.5 ID (A) 2 2.5 3 22 SIM6822 IGBT Characteristics SIM6822M On-Resistance versus DrainCurrent Current IGBTMOSFET Saturation Voltage versus Collector = 15 = 15 V V VGSVGS 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 TJ = 125°C TJ = 25°C 0 TJ = 75°C 1.0 2.0 If (A) VCE(sat) (V) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 SIM6822M On-Resistance Current IGBTMOSFET Diode Forward Current versus versus Drain Forward Voltage = 00 VV GS = VVGS 3.0 4.0 5.0 TJ = 125°C TJ = 75°C TJ = 25°C 0 0.5 1.0 IC (A) Switching LossID(Tc=25) versus Drain Current SWloss- SWlossSwitching Loss ID(Tc=125ff) versus Drain Current 250 Eon(High side) 200 Eoff(High side) 150 Eon(Low side) E (uJ) 150 Eon(Low side) E (uJ) Eoff(High side) 2.5 TC =VCC=15V 125°C, VBB = 300 V, VCC = 15 V VBB=300V, Eon(High side) 200 2.0 Vf (V) 25°C, VBB = 300 V, VCC = 15 V TC =VCC=15V VBB=300V, 250 1.5 Eoff(Low side) 100 Eoff(Low side) 100 50 50 0 0 0 1 2 ID (A) 3 4 5 0.0 Recovery Loss versus Drain Current Recoveryloss - ID(Tc=25ff) TC = 25°C, VBB = 300 V, VCC = 15 V VBB=300V, VCC=15V 20 2.0 ID (A) 3.0 4.0 5.0 Recovery Loss versus Drain Current Recoveryloss - ID(Tc=125ff) T = 125°C, V = 300 V, VCC = 15 V C BB VBB=300V, VCC=15V 20 Highside Highside 15 1.0 15 Lowside E (uJ) E (uJ) Lowside 10 10 5 5 0 0 0 SIM6800-AN 1 2 ID (A) 3 4 5 0 1 SANKEN ELECTRIC CO., LTD. 2 ID (A) 3 4 5 23 SIM6827M IGBT Characteristics SIM6827M MOSFET On-Resistance Drain Current IGBT Diode Forward Current versus versus Forward Voltage GS ==00VV VVGS 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 TJ = 125°C TJ = 25°C 0 TJ = 75°C 1.0 2.0 If (A) VCE(sat) (V) SIM6827M On-Resistance versus DrainCurrent Current IGBTMOSFET Saturation Voltage versus Collector = 15 = 15 V V VGSVGS 3.0 4.0 TJ = 125°C TJ = 75°C TJ = 25°C 0 5.0 0.5 1.0 Switching Loss ID(Tc=25) versus Drain Current SWloss- 500 Eon(High side) Eoff(High side) 400 Eoff(High side) 300 Eon(Low side) 300 Eon(Low side) E (uJ) 400 E (uJ) 2.5 SWlossID(Tc=125ff) Switching Loss versus Drain Current TC =VCC=15V 125°C, VBB = 300 V, VCC = 15 V VBB=300V, 25°C, VBB = 300 V, VCC = 15 V TC =VCC=15V VBB=300V, Eon(High side) Eoff(Low side) Eoff(Low side) 200 200 100 100 0 0 0 1 2 3 ID (A) 4 5 0.0 Recovery Loss versus Drain Current Recoveryloss - ID(Tc=25ff) TC = 25°C, VBB = 300 V, VCC = 15 V VBB=300V, VCC=15V 10 8 1.0 2.0 ID (A) 3.0 4.0 5.0 Recovery Loss versus Drain Current Recoveryloss - ID(Tc=125ff) T = 125°C, V = 300 V, VCC = 15 V C BB VBB=300V, VCC=15V 10 Highside Highside 8 Lowside E (uJ) E (uJ) 2.0 Vf (V) IC (A) 500 1.5 6 Lowside 6 4 4 2 2 0 0 0 SIM6800-AN 1 2 ID (A) 3 4 5 0 1 SANKEN ELECTRIC CO., LTD. 2 ID (A) 3 4 5 24 Sanken reserves the right to make, from time to time, such departures from the detail specifications as may be required to permit improvements in the performance, reliability, or manufacturability of its products. Therefore, the user is cautioned to verify that the information in this publication is current before placing any order. When using the products described herein, the applicability and suitability of such products for the intended purpose shall be reviewed at the users responsibility. Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to society due to device failure or malfunction. Sanken products listed in this publication are designed and intended for use as components in general-purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Their use in any application requiring radiation hardness assurance (e.g., aerospace equipment) is not supported. When considering the use of Sanken products in applications where higher reliability is required (transportation equipment and its control systems or equipment, fire- or burglar-alarm systems, various safety devices, etc.), contact a company sales representative to discuss and obtain written confirmation of your specifications. The use of Sanken products without the written consent of Sanken in applications where extremely high reliability is required (aerospace equipment, nuclear power-control stations, life-support systems, etc.) is strictly prohibited. The information included herein is believed to be accurate and reliable. Application and operation examples described in this publication are given for reference only and Sanken assumes no responsibility for any infringement of industrial property rights, intellectual property rights, or any other rights of Sanken or any third party that may result from its use. The contents in this document must not be transcribed or copied without Sanken’s written consent. SIM6800-AN SANKEN ELECTRIC CO., LTD. 25