IDD03SG60C Data Sheet (757 KB, EN)

IDD03SG60C
3rd Generation thinQ!TM SiC Schottky Diode
Features
Product Summary
• Revolutionary semiconductor material - Silicon Carbide
VDC
600
V
• No reverse recovery / No forward recovery
QC
3.2
nC
• Temperature independent switching behavior
IF; TC< 130 °C
3
A
• Switching behavior benchmark
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Breakdown voltage tested at 20mA2)
• Optimized for high temperature operation
• Lowest Figure of Merit QC/IF
thinQ! 3G Diode designed for fast switching applications like:
• SMPS e.g.; CCM PFC
• Motor Drives; Solar Applications; UPS
Type
Package
Marking
Pin 1
Pin 2
Pin 3
IDD03SG60C
PG-TO252-3
D03G60C
n.c.
A
C
Maximum ratings
Parameter
Symbol Conditions
Continuous forward current
IF
T C<130 °C
Value
3
Surge non-repetitive forward current, I F,SM
sine halfwave
T C=25 °C, t p=10 ms
11.5
T C=150 °C, t p=10 ms
9.7
I F,max
T C=25 °C, t p=10 µs
100
∫i 2dt
T C=25 °C, t p=10 ms
0.61
T C=150 °C, t p=10 ms
0.44
Non-repetitive peak forward current
Unit
A
A2s
i ²t value
Repetitive peak reverse voltage
V RRM
T j=25 °C
600
V
Diode dv/dt ruggedness
dv/ dt
VR= 0….480 V
50
V/ns
Power dissipation
P tot
T C=25 °C
38
W
Operating and storage temperature
T j, T stg
-55 ... 175
°C
Soldering temperature, reflow
soldering (max)
T sold
Rev. 2.4
reflow MSL1
page 1
260
2013-02-11
IDD03SG60C
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
3.9
SMD version, device
on PCB, minimal
footprint
-
-
75
SMD version, device
on PCB, 6 cm2 cooling
area5)
-
50
-
600
-
-
Thermal characteristics
Thermal resistance, junction - case
R thJC
R thJA
Thermal resistance, junction ambient
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
DC blocking voltage
V DC
I R=0.05 mA, T j=25 °C
Diode forward voltage
VF
I F=3 A, T j=25 °C
-
2.1
2.3
I F=3 A, T j=150 °C
-
2.8
-
V R=600 V, T j=25 °C
-
0.23
15
V R=600 V, T j=150 °C
-
1
150
-
3.2
-
nC
-
-
<10
ns
pF
Reverse current
IR
V
µA
AC characteristics
Total capacitive charge
Qc
Switching time3)
tc
V R=400 V,I F≤I F,max,
di F/dt =200 A/µs,
T j=150 °C
Total capacitance
C
V R=1 V, f =1 MHz
-
60
-
V R=300 V, f =1 MHz
-
8
-
V R=600 V, f =1 MHz
-
8
-
1)
2)
J-STD20 and JESD22
All devices tested under avalanche conditions, for a time periode of 10ms, at 20mA.
3)
tc is the time constant for the capacitive displacement current waveform (independent from T j, ILOAD and
di/dt), different from trr which is dependent on Tj, ILOAD and di/dt. No reverse recovery time constant trr due
to absence of minority carrier injection.
4)
Under worst case Zth conditions.
5)
Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm² (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air
6)
Only capacitive charge occuring, guaranteed by design.
Rev. 2.4
page 2
2013-02-11
IDD03SG60C
1 Power dissipation
2 Diode forward current
P tot=f(T C); parameter: RthJC(max)
I F=f(T C)4); T j≤175 °C; parameter: D = t p/T
40
30
35
25
0.1
30
20
IF [A]
Ptot [W]
25
20
15
0.3
15
0.5
10
0.7
10
1
5
5
0
0
25
75
125
175
25
75
125
175
TC [°C]
TC [°C]
3 Typ. forward characteristic
4 Typ. forward characteristic in surge current
mode
I F=f(VF); t p=400 µs; parameter:T j
I F=f(VF); t p=400 µs; parameter: T j
3
15
25ºC
150ºC
-55ºC
100ºC
12
175ºC
2
175ºC
IF [A]
IF [A]
9
-55ºC
6
150ºC
25ºC
1
100ºC
3
0
0
0
1
2
3
4
VF[V]
Rev. 2.4
0
2
4
6
8
VF[V]
page 3
2013-02-11
IDD03SG60C
5 Typ. capacitance charge vs. current slope
6 Typ. reverse current vs. reverse voltage
6)
Q C=f(di F/dt ) ; I F≤I F,max
I R=f(VR); parameter: T j
3.5
10-5
3
10-6
10-7
2
IR [µA]
QC [nC]
2.5
1.5
175 °C
10-8
150 °C
100 °C
1
25 °C
10-9
-55 °C
0.5
0
10-10
100
400
700
1000
100
200
300
400
500
600
VR [V]
diF/dt [A/µs]
7 Typ. transient thermal impedance
8 Typ. capacitance vs. reverse voltage
Z thJC=f(t p); parameter: D = t P/T
C =f(V R); T C=25 °C, f =1 MHz
101
80
70
0.5
60
0.2
50
C [pF]
ZthJC [K/W]
100
0.1
40
0.05
30
10-1
0.02
20
0.01
10
0
10-2
0
10-6
10-5
10-4
10-3
10-2
10-1
tP [s]
Rev. 2.4
page 4
10-1
100
101
VR [V]
102
103
2013-02-11
IDD03SG60C
9 Typ. C stored energy
E C=f(V R)
1.8
1.5
Ec [µJ]
1.3
1.0
0.8
0.5
0.3
0.0
0
200
400
600
VR [V]
Rev. 2.4
page 5
2013-02-11
IDD03SG60C
PG-TO252-3: Outline
Soldering temperature, reflow soldering (max)
Dimensions in mm/inches
Rev. 2.4
page 6
2013-02-11
IDD03SG60C
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
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contact the nearest Infineon Technologies Office (www.infineon.com).
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on the types in question, please contact the nearest Infineon Technologies Office.
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reasonably be expected to cause the failure of that life-support , automotive, aviation and
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Life support systems are intended to be implanted in the human body and/or maintain
and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Rev. 2.4
page 7
2013-02-11