IDH10S120 thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 1200 600 V • No reverse recovery / No forward recovery QC 3.2 36 nC • Temperature independent switching behavior IF; TC< 130 °C 10 3 A • Switching behavior benchmark • High surge current capability • Pb-free lead plating; RoHS compliant PG-TO220-2 • Qualified according to JEDEC1) for target applications • Optimized for high temperature operation • Lowest Figure of Merit QC/IF thinQ!TM Diode designed for fast switching applications like: • SMPS e.g.; CCM PFC • Motor Drives; Solar Applications; UPS Type Package Marking Pin 1 Pin 2 IDH10S120 PG-TO220-2 D10S120 C A Maximum ratings Parameter Symbol Conditions Continuous forward current IF T C<130 °C 10 T C=25 °C, t p=10 ms 58 T C=150 °C, t p=10 ms 50 I F,max T C=25 °C, t p=10 µs 250 ∫i 2dt T C=25 °C, t p=10 ms 16 T C=150 °C, t p=10 ms 12 Surge non-repetitive forward current, I F,SM sine halfwave Non-repetitive peak forward current i ²t value Value Unit A A2s Repetitive peak reverse voltage V RRM T j=25 °C Diode dv/dt ruggedness dv/ dt VR= 0….960 V 50 V/ns Power dissipation P tot T C=25 °C 135 W Operating and storage temperature T j, T stg -55 ... 175 °C Soldering temperature, wavesoldering only allowed at leads T sold Mounting torque Rev. 2.0 1200 1.6mm (0.063 in.) from case for 10s 260 M3 and M3.5 screws 60 page 1 V Mcm 2010-04-20 IDH10S120 Parameter Values Symbol Conditions Unit min. typ. max. - - 1 - - 62 1200 - - Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction - ambient R thJA Thermal resistance, junction- ambient, leaded K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics DC blocking voltage V DC I R=0.05 mA, T j=25 °C Diode forward voltage VF I F=10 A, T j=25 °C - 1,65 1,8 I F=10 A, T j=150 °C - 2,55 - V R=1200 V, T j=25 °C - 10 240 V R=1200 V, T j=150 °C - 40 1000 - 36 - nC - - <10 ns pF Reverse current IR V µA AC characteristics Total capacitive charge Qc Switching time2) tc V R=400 V,I F≤I F,max, di F/dt =200 A/µs, T j=150 °C Total capacitance C V R=1 V, f =1 MHz - 500 - V R=300 V, f =1 MHz - 40 - V R=600 V, f =1 MHz - 36 - 1) J-STD20 and JESD22 2) t c is the time constant for the capacitive displacement current waveform (independent from T j, ILOAD and di/dt), different from t rr which is dependent on T j, ILOAD and di/dt. No reverse recovery time constant t rr due to absence of minority carrier injection 3) Under worst case Zth conditions. 4) Only capacitive charge occuring, guaranteed by design Rev. 2.0 page 2 2010-04-20 IDH10S120 1 Power dissipation 2 Diode forward current P tot=f(T C) I F=f(T C)3); T j≤175 °C; parameter: D = t p/T 100 140 0.1 90 120 80 70 60 80 IF [A] Ptot [W] 100 60 50 0.3 40 0.5 0.7 30 40 1 20 20 10 0 0 25 75 125 25 175 75 TC [°C] 125 175 TC [°C] 3 Typ. forward characteristic 4 Typ. Reverse current vs. reverse voltage I F=f(V F); t p=400 µs EC=f(VR) parameter: T j 20 102 -55 °C 25 °C 100 °C 101 150 °C 15 175 °C 175 °C 150 °C 100 °C IR [µA] IF [A] 100 10 175 °C 25 °C 10-1 150 °C -55 °C 100 °C 5 25 °C 10-2 -55 °C 10-3 0 0 1 2 3 4 5 VSD [V] Rev. 2.0 200 400 600 800 1000 1200 VR [V] page 3 2010-04-20 IDH10S120 5 Typ. capacitance charge vs. current slope 6 Transient thermal impedance 4) Z thJC=f(t p) Q C=f(di F/dt ) ; T j=150 °C; I F≤I F,max parameter: D =t p/T 101 40 35 100 30 0.5 ZthJC [K/W] QC [nQ] 25 20 0.2 0.1 10-1 0.05 0.02 15 0 10-2 10 5 10-3 0 100 400 700 10-5 1000 10-4 10-3 diF/dt [A/µs] 10-2 10-1 t [s] 7 Typ. capacitance vs. reverse voltage 8 Typ. C stored energy C =f(V R); T C=25 °C, f =1 MHz E C=f(V R) 8 500 7 400 6 5 C [pF] Ec [µC] 300 200 4 3 2 100 1 0 0 100 101 102 103 VR [V] Rev. 2.0 0 100 200 300 400 500 600 VR [V] page 4 2010-04-20 IDH10S120 PG-TO220-2: Outline thinQ!TM 2G Diode designed for fast switching applications like: Dimensions in mm/inches Rev. 2.0 page 5 2010-04-20 IDH10S120 Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, including without limitation, warranties of non-infringement of intellectual property rights thinQ!TM 2G Diode designed for fast switching applications like: Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 6 2010-04-20