4788

SENSITRON
SEMICONDUCTOR
SHD126444
TECHNICAL DATA
DATA SHEET 4788, REV. C
SILICON SCHOTTKY RECTIFIER
Low Reverse Leakage
150 C Operating Temperature
Applications:
Switching Power Supply
Converters
Free-Wheeling Diodes
Polarity Protection Diode
Features:
Ultra low Reverse Leakage Current
Soft Reverse Recovery at Low and High Temperature
Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward
Current
Max. Peak One Cycle NonRepetitive Surge Current
Max. Junction Temperature
Max. Storage Temperature
Thermal Resistance
Symbol
VRWM
IF(AV)
IFSM
TJ
Tstg
R JC
Condition
50% duty cycle, rectangular
wave form
8.3 ms, half Sine wave
Per diode
Max.
100
16
Units
V
A
75
A
-65 to +150
-65 to +175
1.5
C
C
C/W
Max.
0.90
0.71
0.75
Units
V
V
mA
15
mA
1000
pF
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
Max. Reverse Current
Symbol
VF1
VF2
IR1
IR2
Max. Junction Capacitance
CT
Condition
@ 16A, Pulse, TJ = 25 C
@ 16A, Pulse, TJ = 125 C
@VR = 100V, Pulse,
TJ = 25 C
@VR = 100V, Pulse,
TJ = 125 C
@VR = 5V, TC = 25 C
fSIG = 1MHz,
VSIG = 50mV (p-p)
©2012 Sensitron Semiconductor 221 West Industry Court  Deer Park, NY 11729-4681
 (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected]
SHD126444
SENSITRON
TECHNICAL DATA
DATA SHEET 4788, REV. C
Mechanical Dimensions: In Inches / mm
.150 (3.81
Dia.
.140 3.56)
.200 (5.08
.190 4.82)
.420 (10.67
.410 10.41)
.665 (16.89
.645 16.38)
.537 (13.64
.527 13.39)
1.132 (28.75
1.032 26.21)
1
2
.035 (0.89
.025 0.63)
3 Places
.045 (1.14
.035 0.89)
.430 (10.92
.410 10.41)
3
.100(2.54) BSC
2 Places
.120(3.05) BSC
TO-257
DEVICE TYPE
SINGLE RECTIFIER
PIN 1
CATHODE
PIN 2
ANODE
PIN 3
ANODE
Typical Forward Characteristics
Typical Reverse Characteristics
102
200 °C
101
Instantaneous Reverse Current - I R (mA)
175 °C
200 °C
1
Instantaneous Forward Current - I F (A)
10
175 °C
0
10
150 °C
100
125 °C
-1
10
100 °C
75 °C
10-2
50 °C
-3
10
25 °C
10-4
125 °C
0
20
40
60
80
Reverse Voltage - RV (V)
100
120
Typical Junction Capacitance
10-1
10-2
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Forward Voltage Drop -FV(V)
0.8
Junction Capacitance - C T (pF)
25 °C
900
800
700
600
500
400
300
200
100
0
20
40
60
80
Reverse Voltage - RV (V)
100
120
©2012 Sensitron Semiconductor 221 West Industry Court  Deer Park, NY 11729-4681
 (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected]
SHD126444
SENSITRON
TECHNICAL DATA
DATA SHEET 4788, REV. C
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the
datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical
equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’
fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of
the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any
other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at
a value exceeding the absolute maximum rating.
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©2012 Sensitron Semiconductor 221 West Industry Court  Deer Park, NY 11729-4681
 (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected]