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4.01
© ALSTOM TRANSPORT - P.Sautelet
High Voltage IGBT Modules (HV-IGBT)
Features
r Highest Reliability in Material and Processes:
Improvement of power cycling capability
r Highest Quality Controls:
– Static and switching tests
– 100% shipping inspection
r HV-IGBT modules and complementary HV-Diodes are
available in rated voltages of 1.7kV, 2.5kV, 3.3kV, 4.5kV, 6.5kV
and rated currents ranging from 200A to 2400A
4
r 1.7kV HV-IGBT modules with Light Punch Through Carrier
Stored Trench Gate Bipolar Transistor (LPT-CSTBTTM)
technology and a new free-wheel diode design for reduced
IGBT losses and suppressed diode oscillation
r 4.5kV, 6.5kV class HV-IGBTs with LPT chip structure to
provide low loss performance and wide RBSOA
r 3.3kV, 4.5kV & 6.5kV HV-IGBT modules and diodes with
10.2kV isolated package available
r New 3.3kV, 4.5kV, 6.5kV R-Series IGBT Modules
– Low loss performance
– Increased terminal torque capability to 22Nm
– 10.2kV high isolation package available on request
– Extended maximum operating temperature and minimum
storage temperature up to 150°C and -55°C respectively
– High Robustness (Wide SOA)
56
1
G3 (AISiC)
G2 (Cu)
G3 (AlSiC)
G2 (Cu)
Under Development
2
CM600HG-90H3
CM600HB-90H
750
3
High Isolation Package (10.2kVrms)
CM400E4G-130H3
CM200HG-130H3 CM400HG-130H3 CM600HG-130H3 CM750HG-130R3,4
CM400HB-90H
CM400HG-66H3
CM400DY-66H
CSTBTTM Chip Technology
Chopper
Single
Single
Single
Chopper
Single
Single
Dual
Single
Single
G3 (AlSiC)
G1 (Cu)
Single
Dual
Single
Chopper
Dual
Single
Dual
Dual
Single
CM600E2Y-34H
600
Chopper
CM400DY-50H
400
CM600DY-34H
200
Dual
G2 (Cu)
G1 (Cu)
G4 (AlSiC)
G4 (Cu)
6500 G3 (AlSiC)
4500
3300
2500
1700
G3 (AlSiC)
G1 (Cu)
Single
Generation
& Base ConfiguPlate
(V)
ration
Material
VCES
800
1200
4
New R-Series
CM1200HC-90R4
CM1200HG-90R3,4
CM900HC-90H
CM1000E4C-66R4
CM800E2C-66H
CM800E4C-66H
CM800E6C-66H
CM900HG-90H3
CM1000HC-66R4 CM1200HC-66H CM1500HC-66R4
CM1200HG-66H3 CM1500HG-66R1,3,4
CM800HC-66H
CM800HC-90R1,4
CM1200HB-66H
CM800HB-66H
CM800HG-90R3,4
CM1200HA-66H
1500
CM800HA-66H
CM1200HC-50H
CM1200HB-50H
CM1200E4C-34N 2
CM1200DC-34N 2
CM1200HCB-34N 2
CM1200DB-34N 2
CM1200HC-34H
CM1200HA-34H
CM800HB-50H
1000
CM1200HA-50H
CM900HB-90H
900
CM800HA-50H
CM800DZ-34H
CM800DZB-34N2
CM800HA-34H
IC (A)
1800
2400
CM1800HC-34N 2 CM2400HC-34N 2
CM1800HCB-34N 2 CM2400HCB-34N 2
CM1600HC-34H CM1800HC-34H CM2400HC-34H
1600
4.01
High Voltage IGBT Modules (HV-IGBT)
Line-up HV-IGBTs
4
57
4.01
High Voltage IGBT Modules (HV-IGBT)
Circuit Diagrams
D
H
E2
E4
Electrical
Characteristics
Free Wheel
Diode
E6
For detailed connections please refer data sheet.
Maximum
Ratings
Package
Symbol
Type
Number
VCES
(V)
IC
(A)
Viso
(V)
Eon
Eoff
Vf
Err
@ Tj = 125°C @ Tj = 125°C @ Tj = 25°C @ Tj = 125°C
(J/P)
(J/P)
(V)
(J/P)
VCE(sat)
@ Tj = 25°C
(V)
Typ.
Max.
Typ.
Typ.
Typ.
Typ.
Thermal & Mechanical
Characteristics
IGBT
Rth(j-c)
(K/W)
Diode
Rth(j-c)
(K/W)
Rth(c-f)
(K/W)
Max.
Max.
Max.
PackageNo.
1700 Volt HV-IGBT Modules
D
H
4
CM600DY-34H
1700
600
4000
2.75
3.58
0.28
0.15
2.4
0.09
0.0180
0.056
0.016
HV2
CM800DZ-34H
1700
800
4000
2.60
3.30
0.35
0.26
2.3
0.12
0.0200
0.034
0.016
HV2
CM800DZB-34N
1700
800
4000
2.10
2.70
0.30
0.20
2.2
0.18
0.0240
0.036
0.018
HV2
CM1200DC-34N
1700 1200 4000
2.15
2.80
0.38
0.36
2.6
0.22
0.0190
0.042
0.016
HV10
CM1200DB-34N
1700 1200 4000
2.15
2.80
0.38
0.36
2.6
0.22
0.0180
0.04
0.016
HV10
CM800HA-34H
1700
4000
2.75
3.58
0.30
0.30
2.4
0.15
0.0135
0.042
0.012
HV1
CM1200HA-34H
1700 1200 4000
2.75
3.58
0.45
0.45
2.4
0.22
0.0090
0.028
0.008
HV1
CM1200HC-34H
1700 1200 4000
2.50
3.25
0.40
0.44
2.25
0.18
0.0120
0.020
0.010
HV1
CM1200HCB-34N 1700 1200 4000
2.05
2.70
0.43
0.32
2.2
0.29
0.0140
0.021
0.010
HV7
CM1600HC-34H
1700 1600 4000
2.60
3.30
0.54
0.58
2.3
0.22
0.0100
0.017
0.008
HV1
CM1800HC-34H
1700 1800 4000
2.40
3.10
0.59
0.67
2.2
0.26
0.0080
0.013
0.007
HV4
CM1800HC-34N
1700 1800 4000
2.15
2.80
0.55
0.56
2.6
0.28
0.0125
0.028
0.011
HV12
800
CM1800HCB-34N 1700 1800 4000
2.00
2.60
0.56
0.50
2.1
0.44
0.0090
0.013
0.007
HV4
CM2400HC-34H
1700 2400 4000
2.60
3.30
0.81
0.87
2.3
0.33
0.0070
0.012
0.006
HV4
CM2400HC-34N
1700 2400 4000
2.15
2.80
0.64
0.84
2.6
0.38
0.0095
0.021
0.008
HV12
CM2400HCB-34N 1700 2400 4000
2.10
2.70
0.65
0.70
2.20
0.50
0.0080
0.012
0.006
HV4
E2
CM600E2Y-34H
1700
4000
2.75
3.58
0.28
0.15
2.40
0.09
0.0180
0.056
0.016
HV13
E4
CM1200E4C-34N
1700 1200 4000
2.15
2.80
0.38
0.36
2.60
0.22
0.0190
0.042
0.016
HV12
600
2500 Volt HV-IGBT Modules
D
H
58
CM400DY-50H
2500
400
6000
3.20
4.16
0.50
0.40
2.90
0.11
0.036
0.072
0.016
HV3
CM800HA-50H
2500
800
6000
3.20
4.16
1.00
0.80
2.90
0.21
0.018
0.036
0.008
HV5
CM800HB-50H
2500
800
6000
2.80
3.64
0.80
0.86
2.50
0.33
0.012
0.024
0.008
HV7
CM1200HA-50H
2500 1200 6000
3.20
4.16
1.50
1.20
2.90
0.31
0.012
0.024
0.006
HV6
CM1200HB-50H
2500 1200 6000
2.80
3.64
1.20
1.29
2.50
0.45
0.008
0.016
0.006
HV4
CM1200HC-50H
2500 1200 6000
2.80
3.60
1.30
1.20
2.50
0.45
0.0085
0.017
0.006
HV4
4.01
High Voltage IGBT Modules (HV-IGBT)
Maximum
Ratings
Type
Number
Package
Symbol
VCES
(V)
IC
(A)
Free Wheel
Diode
Electrical
Characteristics
Viso
(V)
Eon
Eoff
Vf
Err
@ Tj = 125°C @ Tj = 125°C @ Tj = 25°C @ Tj = 125°C
(J/P)
(J/P)
(V)
(J/P)
VCE(sat)
@ Tj = 25°C
(V)
Typ.
Max.
Typ.
Typ.
Thermal & Mechanical
Characteristics
IGBT
Rth(j-c)
(K/W)
Diode
Rth(j-c)
(K/W)
Rth(c-f)
(K/W)
Typ.
Typ.
Max.
Max.
Max.
PackageNo.
3300 Volt HV-IGBT Modules
D
H
E2
CM400DY-66H
3300
400
6000
4.40
CM400HG-66H
3300
400 10200 3.30
CM800HA-66H
3300
800
6000
4.40
CM800HB-66H
3300
800
6000
CM800HC-66H
3300
800
5.72
0.67
0.40
3.30
0.17
0.036
0.072
0.016
HV3
0.59
0.52
2.80
0.30
0.027
0.0525
0.018
HV9
5.72
1.60
0.80
3.30
0.33
0.018
0.036
0.008
HV5
3.80
4.94
1.20
0.96
2.80
0.47
0.012
0.024
0.008
HV7
6000
3.30
4.20
1.10
1.05
2.80
0.60
0.013
0.025
0.008
HV7
CM1000HC-66R
3300 1000 6000
2.45
1.85
1.65
2.15
1.20
0.012
0.0225
0.009
HV14
CM1200HA-66H
3300 1200 6000
4.40
5.72
2.00
1.20
3.30
0.50
0.012
0.024
0.006
HV6
CM1200HB-66H
3300 1200 6000
3.80
4.94
1.80
1.44
2.80
0.70
0.008
0.016
0.006
HV4
CM1200HC-66H
3300 1200 6000
3.30
4.20
1.60
1.55
2.80
0.90
0.0085
0.017
0.006
HV4
CM1200HG-66H
3300 1200 10200 3.30
1.60
1.55
2.80
0.90
0.009
0.0175
0.006
HV8
CM1500HC-66R
3300 1500 6000
2.45
2.75
2.45
2.15
1.75
0.008
0.015
0.006
HV15
CM1500HG-66R
3300 1500 10200 2.45
2.75
2.45
2.15
1.75
0.0085 0.0155
0.006
HV16
CM800E2C-66H
3300
800
6000
3.80
1.20
0.96
2.80
0.47
0.013
0.025
0.008
HV4
CM800E4C-66H
3300
800
6000
3.30
1.10
1.05
2.80
0.60
0.013
0.025
0.006
HV4
CM1000E4C-66R
3300 1000 6000
2.45
1.85
1.65
2.15
1.20
0.012
0.0225
0.007
HV15
CM800E6C-66H
3300
3.30
1.10
1.05
2.80
0.60
0.013
0.025
0.008
HV4
4.94
E4
E6
800
6000
4.20
4500 Volt HV-IGBT Modules
CM400HB-90H
4500
400
6000
3.00
3.90
2.00
1.20
4.00
0.28
0.021
0.042
0.015
HV7
CM600HB-90H
4500
600
6000
3.00
3.90
2.80
1.80
4.00
0.42
0.0135
0.027
0.010
HV7
CM600HG-90H
4500
600 10200 3.45
2.80
1.70
4.80
0.67
0.0165
0.033
0.009
HV11
CM800HC-90R
4500
800 10200 3.50
3.15
2.60
2.60
1.50
0.015
0.0285
0.009
HV14
CM800HG-90R
4500
800 10200 3.50
3.15
2.60
2.60
1.50
0.016
0.0295
0.009
HV17
CM900HB-90H
4500
900
6000
3.00
4.00
2.70
4.00
0.88
0.009
0.018
0.007
HV4
CM900HC-90H
4500
900
6000
3.45
4.20
2.50
4.80
1.00
0.0105
0.021
0.006
HV4
CM900HG-90H
4500
900 10200 3.45
4.20
2.50
4.80
1.00
0.011
0.022
0.006
HV8
CM1200HC-90R
4500 1200 6000
3.50
4.70
3.85
2.60
2.25
0.010
0.019
0.006
HV15
CM1200HG-90R
4500 1200 10200 3.50
4.70
3.85
2.60
2.25
0.0105 0.0195
0.006
HV16
H
3.90
4
6500 Volt HV-IGBT Modules
CM200HG-130H
6500
200 10200
4.5
1.50
1.20
4.0
0.70
0.042
0.066
0.018
HV9
CM400HG-130H
6500
400 10200
4.5
3.00
2.70
4.0
1.40
0.021
0.033
0.009
HV11
CM600HG-130H
6500
600 10200
4.5
4.50
4.30
4.0
2.00
0.014
0.022
0.006
HV8
CM750HG-130R
6500
750 10200
3.9
4.10
4.60
3.0
1.85
0.012
0.022
0.006
HV16
CM400E4G-130H
6500
400 10200
4.5
3.00
2.70
3.8
1.40
0.021
0.033
0.009
HV8
H
E4
Preliminary Data
For detail test conditions please refer to data sheets.
59
4.01
4
High Voltage IGBT Modules (HV-IGBT)
Package HV1
Package HV2
Package HV3
Package HV4
Package HV5
Package HV6
Dimensions in mm
60
4.01
High Voltage IGBT Modules (HV-IGBT)
Package HV7
Package HV8
Package HV9
Package HV10
Package HV11
Package HV12
4
Dimensions in mm
61
4.01
4
High Voltage IGBT Modules (HV-IGBT)
Package HV13
Package H14
Package HV15
Package HV16
Package HV17
Notes
Dimensions in mm
62
4.02
© ALSTOM TRANSPORT
High Voltage Diode Modules
Features
r Complementary to HV-IGBT modules for multilevel
inverter designs
r Wide creepage distance between main terminals
r Ease of both installation and connection allows
application equipment to be reduced in
dimensions and weight
4
Circuit Diagrams
H
D
For detailed connections please refer data sheets.
63
4.02
High Voltage Diode Modules
Line-up HV-Diode Modules
Generation ConVCES & Base Plate figuMaterial ration
(V)
G3 (AlSiC)
Single
G3 (Cu)
Dual
G1 (Cu)
Dual
G2 (Cu)
Dual
G3 (AlSiC)
Single
IC (A)
200
250
300
400
600
900
1000
1200
1500
1800
RM1800HE-34S
1700
3300
RM1200DB-34S
RM400DY-66S
RM1200DB-66S
RM1200HE-66S
Dual
G2 (Cu)
Dual
G3 (AlSiC)
Single
RM600DY-66S
RM400DG-66S
RM1000DC-66F RM1200DG-66S1 RM1500DC-66F2
1
2
RM900DB-90S
4500
RM600HE-90S
Dual
6500
1
G3 (AlSiC)
RM300DG-90S1 RM400DG-90F1,2
Dual RM200DG-130S1 RM250DG-130F1,2
High Isolation Package (10.2kVrms)
2
RM600DG-130S 1
New R-Series
Maximum Ratings
Package
Symbol
Type Number
VRRM
(V)
IDC
(A)
Viso
(V)
Electrical Characteristics
IFSM
(A)
VFM
(V)
@ Tj = 25°C
Err
(J/P)
Typ.
Qrr
(μC)
Typ.
trr
(μs)
Max.
Thermal & Mechanical
Characteristics
Rth(j-c)
(K/W)
Rth(c-f)
(K/W)
PackageNo.
1700 Volt HV-Diode Modules
D
RM1200DB-34S
1700
1200
4000
20800
2.10
0.30
420
0.85
0.020
0.024
RM6
H
RM1800HE-34S
1700
1800
6000
9600
2.90
0.40
600
0.8
0.022
0.017
RM2
3300 Volt HV-Diode Modules
D
4
H
RM400DY-66S
3300
400
6000
3200
3.75
0.15
200
0.75
0.072
0.036
RM1
RM400DG-66S
3300
400
10200
3200
2.80
0.30
270
1.00
0.054
0.048
RM4
RM600DY-66S
3300
600
6000
4800
3.75
0.23
300
0.75
0.048
0.024
RM1
RM1000DC-66F
3300
1000
6000
9400
2.20
1.20
1150
0.75
0.024
0.026
RM5
RM1200DB-66S
3300
1200
6000
9600
3.00
0.75
850
0.75
0.018
0.016
RM3
RM1200DG-66S
3300
1200
10200
9600
3.00
0.90
800
1.00
0.018
0.016
RM4
RM1500DC-66F
3300
1500
6000
14000
2.20
1.85
1700
0.75
0.016
0.0175
RM5
RM1200HE-66S
3300
1200
6000
9600
3.20
0.85
900
1.40
0.020
0.015
RM2
4500 Volt HV-Diode Modules
D
H
RM300DG-90S
4500
300
10200
2400
4.80
0.33
250
1.00
0.066
0.048
RM4
RM400DG-90F
4500
400
10200
3400
2.55
0.75
580
0.90
0.0585
0.048
RM4
RM900DB-90S
4500
900
6000
6400
4.00
0.70
650
0.90
0.020
0.016
RM3
RM600HE-90S
4500
600
6000
4800
4.80
0.62
600
0.90
0.039
0.015
RM2
RM900HC-90S
4500
900
6000
7200
4.80
1.00
750
1.00
0.021
0.016
RM3
6500 Volt HV-Diode Modules
D
RM200DG-130S
6500
200
10200
1600
4.00
0.70
300
1.00
0.066
0.048
RM4
RM250DG-130F
6500
200
10200
2350
3.30
0.80
340
0.60
0.0675
0.048
RM4
RM600DG-130S
6500
600
10200
4800
4.00
2.00
900
1.00
0.022
0.016
RM4
For detail test conditions please refer to data sheets.
64
4.02
High Voltage Diode Modules
Package RM1
Package RM2
Package RM3
Package RM4
Package RM5
Package RM6
4
Dimensions in mm
65
4.03
High Voltage Intelligent Power Modules
Features
r Highest Reliability in Material and Processes
r Highest Quality Controls:
– Static and switching tests
– 100% shipping inspection
r Low VCE(sat) (Typ. 3.05V)
r Combining gate drive and protection circuitry
(Over Current, Short Circuit, Over Temperature)
r Optimised isolation design to satisfy 6kV AC
4
66
r Designed for high power converters and inverters,
medium voltage drives, and traction drives
4.03
High Voltage Intelligent Power Modules
Line-up HV-IPM
IDC
(A)
VRRM
(V)
Configuration
1200
H
3300
Maximum Ratings
Type Number
VCES
(V)
IC
(A)
Viso
(V)
Typical Protection
Functions
Electrical Characteristics
VCE(sat)
@ Tj = 25°C
(V)
Typ.
Max.
Vf
(V)
Typ.
fPWM
(kHz)
Max.
PM1200HCE330-1
tDEAD
(μs)
Min.
Thermal Characteristics
PackageNo.
SC*
(A)
OT
(°C)
UV
(V)
IGBT
Rth(j-c)
(°C/W)
Diode
Rth(j-c)
(°C/W)
Rth(c-f)
(°C/W)
2200
113
20
0.0083
0.0167
0.0075
HV-IPM
PM1200HCE330-1
3300 1200 6000
3.05
3.97
2.9
2.0
8.0
PM1
Package PM1
4
Dimensions in mm
67
5.
High Voltage Integrated Circuits
Half Bridge Driver HVIC
This product is a semiconductor intergrated circuit designed to directly
drive the power MOS/IGBT modules of half bridge composition by
integrating the 1200V, 600V and 8/24V dielectric elements onto one chip.
The internal installation of high side/low side driver circuits, protective
circuits against the power supply voltage drop and interlocking circuits
enables a device to drive/control the power elements without using
the photocoupler from a logic circuit such as a microcomputer.
Applications
Most suitable for the following applied
products to drive the power MOS/IGBT
modules for inverters:
5
68
r
r
r
r
r
r
General inverters
Air conditioners, refrigerators and washing machines
AC servo motors
DC brushless motors
Plasma display panel
Illumination machinery
5.
High Voltage Integrated Circuits
Driving
method
Number
of inputsignals
Generation
3 Phase
2x3Ø
3rd
2
Output
current
(A)
Dead-time
control
M81712FP
600
0.2/-0.5
Input Signal
UV, IL, NF
28X9R
M81706AFP
600
0.2/-0.35
Input Signal
UV, IL
8P2S
M81708FP
600
0.2/-0.35
Input Signal
UV, IL
16P2N
M81719FP
600
0.2/-0.35
Input Signal
UV, NF
8P2S
M81720FP
600
0.2/-0.35
Input Signal
UV, IL, NF
8P2S
M81721FP
600
1.0
Input Signal
UV, NF, SC, FO, FORST, FOIN
24P2Q
M81019FP
1200
1.0
Input Signal
UV, NF, SC, FO, FORST, FOIN
24P2Q
M81700FP
600
2.5
Input Signal
UV, IL, SD
16P2N
M81701FP
600
2.5
Input Signal
UV, IL
16P2N
M81702FP
600
2.5
Input Signal
UV, SD
16P2N
M81703FP
600
2.5
Input Signal
UV
16P2N
M81709FP
600
2.5
Input Signal
UV, IL
16P2N
M81722FP
600
3.0
Input Signal
UV, NF
8P2S
M81736FP
600
0.2/-0.35
Input Signal
UV, IL
compatible with M81706AFP
8P2S
UV, IL
16P2N
Functions
Package
outline
3rd
Half Bridge
2
Floating
supply voltage
(V)
Typename
4th
M81735FP
600
0.5
Input Signal
3rd
M81713FP
600
0.5
Internal
UV
8P2S
4th
M81734FP
600
0.5
Internal
UV
compatible with M81713FP
8P2S
1
M81707FP
600
0.1
Input Signal
UV
16P2N
M81731FP
600
3.0
Input Signal
UV, NF
16P2N
M81723FP
600
0.13/-0.1
Input Signal
UV
compatible with M81707FP
16P2N
UV
16P2N
3rd
Dual
Half Bridge
1x2
4th
Dual
Low side
Single
High side
1x2
M81737FP
600
0.2
Input Signal
M81711FP
24
1.01/-0.8
Low active
8P2S
M81716FP
24
1.01/-0.8
High active
8P2S
2nd
M81705FP
600
0.15/-0.13
UV
8P2S
3rd
M81725FP
600
3.0
UV, NF
8P2S
5
3rd
1
UV: Under Voltage / IL: Inter Lock / NF: Input Noise Filter / SC: Short Current / SD: Shut Down /
SS: Soft Shutdown / FO: Failure Output / FOIN: FO Input / FORST: FO reset / CFO: Capacitor FO
69
5.
High Voltage Integrated Circuits
Package 8P2S (8pin 225mil SOP)
Package 16P2N (16pin 300mil SOP)
Package 24P2Q (24pin 300mil SSOP)
Package 28X9R (28pin 450mil SSOP)
Notes
5
Dimensions in mm
70
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