4.01 © ALSTOM TRANSPORT - P.Sautelet High Voltage IGBT Modules (HV-IGBT) Features r Highest Reliability in Material and Processes: Improvement of power cycling capability r Highest Quality Controls: – Static and switching tests – 100% shipping inspection r HV-IGBT modules and complementary HV-Diodes are available in rated voltages of 1.7kV, 2.5kV, 3.3kV, 4.5kV, 6.5kV and rated currents ranging from 200A to 2400A 4 r 1.7kV HV-IGBT modules with Light Punch Through Carrier Stored Trench Gate Bipolar Transistor (LPT-CSTBTTM) technology and a new free-wheel diode design for reduced IGBT losses and suppressed diode oscillation r 4.5kV, 6.5kV class HV-IGBTs with LPT chip structure to provide low loss performance and wide RBSOA r 3.3kV, 4.5kV & 6.5kV HV-IGBT modules and diodes with 10.2kV isolated package available r New 3.3kV, 4.5kV, 6.5kV R-Series IGBT Modules – Low loss performance – Increased terminal torque capability to 22Nm – 10.2kV high isolation package available on request – Extended maximum operating temperature and minimum storage temperature up to 150°C and -55°C respectively – High Robustness (Wide SOA) 56 1 G3 (AISiC) G2 (Cu) G3 (AlSiC) G2 (Cu) Under Development 2 CM600HG-90H3 CM600HB-90H 750 3 High Isolation Package (10.2kVrms) CM400E4G-130H3 CM200HG-130H3 CM400HG-130H3 CM600HG-130H3 CM750HG-130R3,4 CM400HB-90H CM400HG-66H3 CM400DY-66H CSTBTTM Chip Technology Chopper Single Single Single Chopper Single Single Dual Single Single G3 (AlSiC) G1 (Cu) Single Dual Single Chopper Dual Single Dual Dual Single CM600E2Y-34H 600 Chopper CM400DY-50H 400 CM600DY-34H 200 Dual G2 (Cu) G1 (Cu) G4 (AlSiC) G4 (Cu) 6500 G3 (AlSiC) 4500 3300 2500 1700 G3 (AlSiC) G1 (Cu) Single Generation & Base ConfiguPlate (V) ration Material VCES 800 1200 4 New R-Series CM1200HC-90R4 CM1200HG-90R3,4 CM900HC-90H CM1000E4C-66R4 CM800E2C-66H CM800E4C-66H CM800E6C-66H CM900HG-90H3 CM1000HC-66R4 CM1200HC-66H CM1500HC-66R4 CM1200HG-66H3 CM1500HG-66R1,3,4 CM800HC-66H CM800HC-90R1,4 CM1200HB-66H CM800HB-66H CM800HG-90R3,4 CM1200HA-66H 1500 CM800HA-66H CM1200HC-50H CM1200HB-50H CM1200E4C-34N 2 CM1200DC-34N 2 CM1200HCB-34N 2 CM1200DB-34N 2 CM1200HC-34H CM1200HA-34H CM800HB-50H 1000 CM1200HA-50H CM900HB-90H 900 CM800HA-50H CM800DZ-34H CM800DZB-34N2 CM800HA-34H IC (A) 1800 2400 CM1800HC-34N 2 CM2400HC-34N 2 CM1800HCB-34N 2 CM2400HCB-34N 2 CM1600HC-34H CM1800HC-34H CM2400HC-34H 1600 4.01 High Voltage IGBT Modules (HV-IGBT) Line-up HV-IGBTs 4 57 4.01 High Voltage IGBT Modules (HV-IGBT) Circuit Diagrams D H E2 E4 Electrical Characteristics Free Wheel Diode E6 For detailed connections please refer data sheet. Maximum Ratings Package Symbol Type Number VCES (V) IC (A) Viso (V) Eon Eoff Vf Err @ Tj = 125°C @ Tj = 125°C @ Tj = 25°C @ Tj = 125°C (J/P) (J/P) (V) (J/P) VCE(sat) @ Tj = 25°C (V) Typ. Max. Typ. Typ. Typ. Typ. Thermal & Mechanical Characteristics IGBT Rth(j-c) (K/W) Diode Rth(j-c) (K/W) Rth(c-f) (K/W) Max. Max. Max. PackageNo. 1700 Volt HV-IGBT Modules D H 4 CM600DY-34H 1700 600 4000 2.75 3.58 0.28 0.15 2.4 0.09 0.0180 0.056 0.016 HV2 CM800DZ-34H 1700 800 4000 2.60 3.30 0.35 0.26 2.3 0.12 0.0200 0.034 0.016 HV2 CM800DZB-34N 1700 800 4000 2.10 2.70 0.30 0.20 2.2 0.18 0.0240 0.036 0.018 HV2 CM1200DC-34N 1700 1200 4000 2.15 2.80 0.38 0.36 2.6 0.22 0.0190 0.042 0.016 HV10 CM1200DB-34N 1700 1200 4000 2.15 2.80 0.38 0.36 2.6 0.22 0.0180 0.04 0.016 HV10 CM800HA-34H 1700 4000 2.75 3.58 0.30 0.30 2.4 0.15 0.0135 0.042 0.012 HV1 CM1200HA-34H 1700 1200 4000 2.75 3.58 0.45 0.45 2.4 0.22 0.0090 0.028 0.008 HV1 CM1200HC-34H 1700 1200 4000 2.50 3.25 0.40 0.44 2.25 0.18 0.0120 0.020 0.010 HV1 CM1200HCB-34N 1700 1200 4000 2.05 2.70 0.43 0.32 2.2 0.29 0.0140 0.021 0.010 HV7 CM1600HC-34H 1700 1600 4000 2.60 3.30 0.54 0.58 2.3 0.22 0.0100 0.017 0.008 HV1 CM1800HC-34H 1700 1800 4000 2.40 3.10 0.59 0.67 2.2 0.26 0.0080 0.013 0.007 HV4 CM1800HC-34N 1700 1800 4000 2.15 2.80 0.55 0.56 2.6 0.28 0.0125 0.028 0.011 HV12 800 CM1800HCB-34N 1700 1800 4000 2.00 2.60 0.56 0.50 2.1 0.44 0.0090 0.013 0.007 HV4 CM2400HC-34H 1700 2400 4000 2.60 3.30 0.81 0.87 2.3 0.33 0.0070 0.012 0.006 HV4 CM2400HC-34N 1700 2400 4000 2.15 2.80 0.64 0.84 2.6 0.38 0.0095 0.021 0.008 HV12 CM2400HCB-34N 1700 2400 4000 2.10 2.70 0.65 0.70 2.20 0.50 0.0080 0.012 0.006 HV4 E2 CM600E2Y-34H 1700 4000 2.75 3.58 0.28 0.15 2.40 0.09 0.0180 0.056 0.016 HV13 E4 CM1200E4C-34N 1700 1200 4000 2.15 2.80 0.38 0.36 2.60 0.22 0.0190 0.042 0.016 HV12 600 2500 Volt HV-IGBT Modules D H 58 CM400DY-50H 2500 400 6000 3.20 4.16 0.50 0.40 2.90 0.11 0.036 0.072 0.016 HV3 CM800HA-50H 2500 800 6000 3.20 4.16 1.00 0.80 2.90 0.21 0.018 0.036 0.008 HV5 CM800HB-50H 2500 800 6000 2.80 3.64 0.80 0.86 2.50 0.33 0.012 0.024 0.008 HV7 CM1200HA-50H 2500 1200 6000 3.20 4.16 1.50 1.20 2.90 0.31 0.012 0.024 0.006 HV6 CM1200HB-50H 2500 1200 6000 2.80 3.64 1.20 1.29 2.50 0.45 0.008 0.016 0.006 HV4 CM1200HC-50H 2500 1200 6000 2.80 3.60 1.30 1.20 2.50 0.45 0.0085 0.017 0.006 HV4 4.01 High Voltage IGBT Modules (HV-IGBT) Maximum Ratings Type Number Package Symbol VCES (V) IC (A) Free Wheel Diode Electrical Characteristics Viso (V) Eon Eoff Vf Err @ Tj = 125°C @ Tj = 125°C @ Tj = 25°C @ Tj = 125°C (J/P) (J/P) (V) (J/P) VCE(sat) @ Tj = 25°C (V) Typ. Max. Typ. Typ. Thermal & Mechanical Characteristics IGBT Rth(j-c) (K/W) Diode Rth(j-c) (K/W) Rth(c-f) (K/W) Typ. Typ. Max. Max. Max. PackageNo. 3300 Volt HV-IGBT Modules D H E2 CM400DY-66H 3300 400 6000 4.40 CM400HG-66H 3300 400 10200 3.30 CM800HA-66H 3300 800 6000 4.40 CM800HB-66H 3300 800 6000 CM800HC-66H 3300 800 5.72 0.67 0.40 3.30 0.17 0.036 0.072 0.016 HV3 0.59 0.52 2.80 0.30 0.027 0.0525 0.018 HV9 5.72 1.60 0.80 3.30 0.33 0.018 0.036 0.008 HV5 3.80 4.94 1.20 0.96 2.80 0.47 0.012 0.024 0.008 HV7 6000 3.30 4.20 1.10 1.05 2.80 0.60 0.013 0.025 0.008 HV7 CM1000HC-66R 3300 1000 6000 2.45 1.85 1.65 2.15 1.20 0.012 0.0225 0.009 HV14 CM1200HA-66H 3300 1200 6000 4.40 5.72 2.00 1.20 3.30 0.50 0.012 0.024 0.006 HV6 CM1200HB-66H 3300 1200 6000 3.80 4.94 1.80 1.44 2.80 0.70 0.008 0.016 0.006 HV4 CM1200HC-66H 3300 1200 6000 3.30 4.20 1.60 1.55 2.80 0.90 0.0085 0.017 0.006 HV4 CM1200HG-66H 3300 1200 10200 3.30 1.60 1.55 2.80 0.90 0.009 0.0175 0.006 HV8 CM1500HC-66R 3300 1500 6000 2.45 2.75 2.45 2.15 1.75 0.008 0.015 0.006 HV15 CM1500HG-66R 3300 1500 10200 2.45 2.75 2.45 2.15 1.75 0.0085 0.0155 0.006 HV16 CM800E2C-66H 3300 800 6000 3.80 1.20 0.96 2.80 0.47 0.013 0.025 0.008 HV4 CM800E4C-66H 3300 800 6000 3.30 1.10 1.05 2.80 0.60 0.013 0.025 0.006 HV4 CM1000E4C-66R 3300 1000 6000 2.45 1.85 1.65 2.15 1.20 0.012 0.0225 0.007 HV15 CM800E6C-66H 3300 3.30 1.10 1.05 2.80 0.60 0.013 0.025 0.008 HV4 4.94 E4 E6 800 6000 4.20 4500 Volt HV-IGBT Modules CM400HB-90H 4500 400 6000 3.00 3.90 2.00 1.20 4.00 0.28 0.021 0.042 0.015 HV7 CM600HB-90H 4500 600 6000 3.00 3.90 2.80 1.80 4.00 0.42 0.0135 0.027 0.010 HV7 CM600HG-90H 4500 600 10200 3.45 2.80 1.70 4.80 0.67 0.0165 0.033 0.009 HV11 CM800HC-90R 4500 800 10200 3.50 3.15 2.60 2.60 1.50 0.015 0.0285 0.009 HV14 CM800HG-90R 4500 800 10200 3.50 3.15 2.60 2.60 1.50 0.016 0.0295 0.009 HV17 CM900HB-90H 4500 900 6000 3.00 4.00 2.70 4.00 0.88 0.009 0.018 0.007 HV4 CM900HC-90H 4500 900 6000 3.45 4.20 2.50 4.80 1.00 0.0105 0.021 0.006 HV4 CM900HG-90H 4500 900 10200 3.45 4.20 2.50 4.80 1.00 0.011 0.022 0.006 HV8 CM1200HC-90R 4500 1200 6000 3.50 4.70 3.85 2.60 2.25 0.010 0.019 0.006 HV15 CM1200HG-90R 4500 1200 10200 3.50 4.70 3.85 2.60 2.25 0.0105 0.0195 0.006 HV16 H 3.90 4 6500 Volt HV-IGBT Modules CM200HG-130H 6500 200 10200 4.5 1.50 1.20 4.0 0.70 0.042 0.066 0.018 HV9 CM400HG-130H 6500 400 10200 4.5 3.00 2.70 4.0 1.40 0.021 0.033 0.009 HV11 CM600HG-130H 6500 600 10200 4.5 4.50 4.30 4.0 2.00 0.014 0.022 0.006 HV8 CM750HG-130R 6500 750 10200 3.9 4.10 4.60 3.0 1.85 0.012 0.022 0.006 HV16 CM400E4G-130H 6500 400 10200 4.5 3.00 2.70 3.8 1.40 0.021 0.033 0.009 HV8 H E4 Preliminary Data For detail test conditions please refer to data sheets. 59 4.01 4 High Voltage IGBT Modules (HV-IGBT) Package HV1 Package HV2 Package HV3 Package HV4 Package HV5 Package HV6 Dimensions in mm 60 4.01 High Voltage IGBT Modules (HV-IGBT) Package HV7 Package HV8 Package HV9 Package HV10 Package HV11 Package HV12 4 Dimensions in mm 61 4.01 4 High Voltage IGBT Modules (HV-IGBT) Package HV13 Package H14 Package HV15 Package HV16 Package HV17 Notes Dimensions in mm 62 4.02 © ALSTOM TRANSPORT High Voltage Diode Modules Features r Complementary to HV-IGBT modules for multilevel inverter designs r Wide creepage distance between main terminals r Ease of both installation and connection allows application equipment to be reduced in dimensions and weight 4 Circuit Diagrams H D For detailed connections please refer data sheets. 63 4.02 High Voltage Diode Modules Line-up HV-Diode Modules Generation ConVCES & Base Plate figuMaterial ration (V) G3 (AlSiC) Single G3 (Cu) Dual G1 (Cu) Dual G2 (Cu) Dual G3 (AlSiC) Single IC (A) 200 250 300 400 600 900 1000 1200 1500 1800 RM1800HE-34S 1700 3300 RM1200DB-34S RM400DY-66S RM1200DB-66S RM1200HE-66S Dual G2 (Cu) Dual G3 (AlSiC) Single RM600DY-66S RM400DG-66S RM1000DC-66F RM1200DG-66S1 RM1500DC-66F2 1 2 RM900DB-90S 4500 RM600HE-90S Dual 6500 1 G3 (AlSiC) RM300DG-90S1 RM400DG-90F1,2 Dual RM200DG-130S1 RM250DG-130F1,2 High Isolation Package (10.2kVrms) 2 RM600DG-130S 1 New R-Series Maximum Ratings Package Symbol Type Number VRRM (V) IDC (A) Viso (V) Electrical Characteristics IFSM (A) VFM (V) @ Tj = 25°C Err (J/P) Typ. Qrr (μC) Typ. trr (μs) Max. Thermal & Mechanical Characteristics Rth(j-c) (K/W) Rth(c-f) (K/W) PackageNo. 1700 Volt HV-Diode Modules D RM1200DB-34S 1700 1200 4000 20800 2.10 0.30 420 0.85 0.020 0.024 RM6 H RM1800HE-34S 1700 1800 6000 9600 2.90 0.40 600 0.8 0.022 0.017 RM2 3300 Volt HV-Diode Modules D 4 H RM400DY-66S 3300 400 6000 3200 3.75 0.15 200 0.75 0.072 0.036 RM1 RM400DG-66S 3300 400 10200 3200 2.80 0.30 270 1.00 0.054 0.048 RM4 RM600DY-66S 3300 600 6000 4800 3.75 0.23 300 0.75 0.048 0.024 RM1 RM1000DC-66F 3300 1000 6000 9400 2.20 1.20 1150 0.75 0.024 0.026 RM5 RM1200DB-66S 3300 1200 6000 9600 3.00 0.75 850 0.75 0.018 0.016 RM3 RM1200DG-66S 3300 1200 10200 9600 3.00 0.90 800 1.00 0.018 0.016 RM4 RM1500DC-66F 3300 1500 6000 14000 2.20 1.85 1700 0.75 0.016 0.0175 RM5 RM1200HE-66S 3300 1200 6000 9600 3.20 0.85 900 1.40 0.020 0.015 RM2 4500 Volt HV-Diode Modules D H RM300DG-90S 4500 300 10200 2400 4.80 0.33 250 1.00 0.066 0.048 RM4 RM400DG-90F 4500 400 10200 3400 2.55 0.75 580 0.90 0.0585 0.048 RM4 RM900DB-90S 4500 900 6000 6400 4.00 0.70 650 0.90 0.020 0.016 RM3 RM600HE-90S 4500 600 6000 4800 4.80 0.62 600 0.90 0.039 0.015 RM2 RM900HC-90S 4500 900 6000 7200 4.80 1.00 750 1.00 0.021 0.016 RM3 6500 Volt HV-Diode Modules D RM200DG-130S 6500 200 10200 1600 4.00 0.70 300 1.00 0.066 0.048 RM4 RM250DG-130F 6500 200 10200 2350 3.30 0.80 340 0.60 0.0675 0.048 RM4 RM600DG-130S 6500 600 10200 4800 4.00 2.00 900 1.00 0.022 0.016 RM4 For detail test conditions please refer to data sheets. 64 4.02 High Voltage Diode Modules Package RM1 Package RM2 Package RM3 Package RM4 Package RM5 Package RM6 4 Dimensions in mm 65 4.03 High Voltage Intelligent Power Modules Features r Highest Reliability in Material and Processes r Highest Quality Controls: – Static and switching tests – 100% shipping inspection r Low VCE(sat) (Typ. 3.05V) r Combining gate drive and protection circuitry (Over Current, Short Circuit, Over Temperature) r Optimised isolation design to satisfy 6kV AC 4 66 r Designed for high power converters and inverters, medium voltage drives, and traction drives 4.03 High Voltage Intelligent Power Modules Line-up HV-IPM IDC (A) VRRM (V) Configuration 1200 H 3300 Maximum Ratings Type Number VCES (V) IC (A) Viso (V) Typical Protection Functions Electrical Characteristics VCE(sat) @ Tj = 25°C (V) Typ. Max. Vf (V) Typ. fPWM (kHz) Max. PM1200HCE330-1 tDEAD (μs) Min. Thermal Characteristics PackageNo. SC* (A) OT (°C) UV (V) IGBT Rth(j-c) (°C/W) Diode Rth(j-c) (°C/W) Rth(c-f) (°C/W) 2200 113 20 0.0083 0.0167 0.0075 HV-IPM PM1200HCE330-1 3300 1200 6000 3.05 3.97 2.9 2.0 8.0 PM1 Package PM1 4 Dimensions in mm 67 5. High Voltage Integrated Circuits Half Bridge Driver HVIC This product is a semiconductor intergrated circuit designed to directly drive the power MOS/IGBT modules of half bridge composition by integrating the 1200V, 600V and 8/24V dielectric elements onto one chip. The internal installation of high side/low side driver circuits, protective circuits against the power supply voltage drop and interlocking circuits enables a device to drive/control the power elements without using the photocoupler from a logic circuit such as a microcomputer. Applications Most suitable for the following applied products to drive the power MOS/IGBT modules for inverters: 5 68 r r r r r r General inverters Air conditioners, refrigerators and washing machines AC servo motors DC brushless motors Plasma display panel Illumination machinery 5. High Voltage Integrated Circuits Driving method Number of inputsignals Generation 3 Phase 2x3Ø 3rd 2 Output current (A) Dead-time control M81712FP 600 0.2/-0.5 Input Signal UV, IL, NF 28X9R M81706AFP 600 0.2/-0.35 Input Signal UV, IL 8P2S M81708FP 600 0.2/-0.35 Input Signal UV, IL 16P2N M81719FP 600 0.2/-0.35 Input Signal UV, NF 8P2S M81720FP 600 0.2/-0.35 Input Signal UV, IL, NF 8P2S M81721FP 600 1.0 Input Signal UV, NF, SC, FO, FORST, FOIN 24P2Q M81019FP 1200 1.0 Input Signal UV, NF, SC, FO, FORST, FOIN 24P2Q M81700FP 600 2.5 Input Signal UV, IL, SD 16P2N M81701FP 600 2.5 Input Signal UV, IL 16P2N M81702FP 600 2.5 Input Signal UV, SD 16P2N M81703FP 600 2.5 Input Signal UV 16P2N M81709FP 600 2.5 Input Signal UV, IL 16P2N M81722FP 600 3.0 Input Signal UV, NF 8P2S M81736FP 600 0.2/-0.35 Input Signal UV, IL compatible with M81706AFP 8P2S UV, IL 16P2N Functions Package outline 3rd Half Bridge 2 Floating supply voltage (V) Typename 4th M81735FP 600 0.5 Input Signal 3rd M81713FP 600 0.5 Internal UV 8P2S 4th M81734FP 600 0.5 Internal UV compatible with M81713FP 8P2S 1 M81707FP 600 0.1 Input Signal UV 16P2N M81731FP 600 3.0 Input Signal UV, NF 16P2N M81723FP 600 0.13/-0.1 Input Signal UV compatible with M81707FP 16P2N UV 16P2N 3rd Dual Half Bridge 1x2 4th Dual Low side Single High side 1x2 M81737FP 600 0.2 Input Signal M81711FP 24 1.01/-0.8 Low active 8P2S M81716FP 24 1.01/-0.8 High active 8P2S 2nd M81705FP 600 0.15/-0.13 UV 8P2S 3rd M81725FP 600 3.0 UV, NF 8P2S 5 3rd 1 UV: Under Voltage / IL: Inter Lock / NF: Input Noise Filter / SC: Short Current / SD: Shut Down / SS: Soft Shutdown / FO: Failure Output / FOIN: FO Input / FORST: FO reset / CFO: Capacitor FO 69 5. High Voltage Integrated Circuits Package 8P2S (8pin 225mil SOP) Package 16P2N (16pin 300mil SOP) Package 24P2Q (24pin 300mil SSOP) Package 28X9R (28pin 450mil SSOP) Notes 5 Dimensions in mm 70