STR-W6251D, STR-W6252D, and STR-W6253D PWM Off-Line Switching Regulator ICs Features and Benefits Description ▪ TO-220 fully-molded package with 6 pins ▪ Current mode PWM control ▪ PWM and frequency modulation functions: reduces EMI noise, simplifies EMI filters, and cuts cost by external part reduction ▪ Built-in Slope Compensation circuit: avoids subharmonic oscillation ▪ Automatic Standby Mode function (Input Power < 40 mW at no load) ▫ Normal operation: PWM mode ▫ Light load operation: Standby mode (burst oscillation) ▪ Built-in Audible Noise Suppression function during Standby mode STR-W6200D series are power ICs for switching power supplies, incorporating a power MOSFET and a current mode PWM controller IC in one package. Including a startup circuit and a standby function in the controller, the product achieves low power consumption, low standby power, and high cost-effectiveness in power supply systems, while reducing external components. Continued on the next page… Applications: Package: TO-220F-6L Switching power supplies for electronic devices such as: • White goods • Consumer electronics • Office automation • Industrial equipment • Communication equipment Not to scale Typical Application Clamp Snubber Circuit C10 R9 V OUT PC1 R3 P R6 R4 D4 C1 L2 D3 T1 VAC S U1 R7 C6 C5 R5 U2 C7 R8 GND D1 R2 D/ST S/OCP VCC GND FB FM/ELP STR-W6200D 1 3 4 5 6 7 CV ROCP C2 D External Latch Circuit (Optional) C4 PC1 C3 C8 Damper Snubber STR-W6200D-DS SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/ November 12, 2012 STR-W6251D, STR-W6252D, and STR-W6253D PWM Off-Line Switching Regulator ICs Features and Benefits (continued) ▪ Built-in startup circuit: reduces power consumption in standby operation, and eliminates external components ▪ Bias-Assist function: improves startup operation, suppresses VCC pin voltage drop in operation, and allows use of smaller VCC capacitor ▪ Built-in Leading Edge Blanking function ▪ Protection Functions: ▫ Overcurrent Protection function (OCP); pulse-by-pulse, built-in compensation circuit to minimize OCP point variation on AC input voltage ▫ Overload Protection function (OLP); auto restart, built-in timer, reduces heat during overload condition, and few external components required ▫ External Latch Protection function (ELP): latched shutdown by external signal ▫ Overvoltage Protection function (OVP): latched shutdown ▫ Thermal Shutdown function (TSD); latched shutdown Selection Guide Part Number fOSC (kHz) MOSFET VDSS(min) (V) STR-W6251D STR-W6252D STR-W6253D 67 650 POUT* (W) RDS(on) (max) (Ω) 230 VAC 85 to 265 VAC 3.95 45 30 2.8 60 40 1.9 90 60 *The listed output power is based on the thermal ratings, and the peak output power can be 120% to 140% of the value stated here. At low output voltage and short duty cycle, the output power may be less than the value stated here. STR-W6200D-DS SANKEN ELECTRIC CO., LTD. 2 November 12, 2012 STR-W6251D, STR-W6252D, and STR-W6253D PWM Off-Line Switching Regulator ICs The polarity value for current specifies a sink as "+," and a source as “−,” referencing the IC. Absolute Maximum Ratings Unless specifically noted, valid at TA = 25°C Characteristic Symbol Note Pin Rating 2.6 A 1-3 3.2 A STR-W6253D 10 A STR-W6251D 2.6 A 3.2 A STR-W6251D Drain Peak Current1 Maximum Switching Current2 Avalanche Energy3 IDPEAK IDMAX EAS STR-W6252D Single Pulse STR-W6252D TA = –20°C to 125°C 1-3 Unit STR-W6253D 10 A STR-W6251D ILPEAK = 2 A 47 mJ 62 mJ 86 mJ Single Pulse, STR-W6252D ILPEAK = 2.3 A VDD = 99 V, STR-W6253D ILPEAK = 2.7 A L = 20 mH 1-3 S/OCP Pin Voltage VOCP 3-5 –6 to 6 V FM/ELP Pin Voltage VFM 7-5 –0.3 to 12 V FM/ELP Pin Sink Current IFM FB Pin Voltage VFB Controller Part Input Voltage VCC FB pin is open 7-5 3 mA 6-5 –0.3 to 9 V 4-5 0 to 32 V 25 W STR-W6251D MOSFET Power Dissipation4 PD1 STR-W6252D With infinite heatsink STR-W6253D 26 W 27.5 W 1.3 W 4-5 0.8 W – –20 to 115 °C 1-3 Without heatsink Controller Part Power Dissipation PD2 Recommended operating temperature is TF = 105°C (max) Internal Frame Temperature in Operation TF Operating Ambient Temperature Top – –20 to 115 °C Storage Temperature Tstg – –40 to 125 °C Channel Temperature Tch – 150 °C 1Refer to MOSFET Safe Operating Area Curve. 2The Maximum Switching Current is the drain current determined by the drive voltage of the IC and threshold voltage (V ) of the MOSFET. th 3Refer to MOSFET Avalanche Energy Derating Coefficient Curve. 4Refer to MOSFET Temperature versus Power Dissipation Curve. STR-W6200D-DS SANKEN ELECTRIC CO., LTD. 3 November 12, 2012 STR-W6251D, STR-W6252D, and STR-W6253D PWM Off-Line Switching Regulator ICs Electrical Characteristics of Control Part Unless specifically noted, TA is 25°C, VCC = 18 V Characteristic Symbol Pin Min. Typ. Max Unit Operation Start Voltage VCC(ON) 4-5 13.9 15.5 17.1 V Operation Stop Voltage VCC(OFF) 4-5 8.0 8.9 9.8 V ICC(ON) 4-5 – 1.4 2.8 mA Circuit Current in Non-Oscillation ICC(STOP) 4-5 – 0.8 1.3 mA Circuit Current in Non-Operation ICC(OFF) 4-5 – 5 20 μA Startup Current ISTARTUP 4-5 –0.9 –1.6 –2.3 mA Bias Assist Voltage VCC(BIAS) 4-5 13.6 15.2 16.8 V FM/ELP Pin High Threshold Voltage VFM(H) 7-5 4.0 4.5 5.0 V FM/ELP Pin Low Threshold Voltage VFM(L) 7-5 2.4 2.8 3.2 V Power Supply Startup Operation Circuit Current in Operation Normal Operation FM/ELP Pin Voltage Difference ∆VFM 7-5 1.4 1.7 1.8 V IFM(SRC) 7-5 –17.4 –13 –8.6 μA FM/ELP Pin Sink Current IFM(SNK) 7-5 8.6 13 17.4 μA Average Switching Frequency fOSC(AVG) 1-5 60 67 74 kHz FM/ELP Pin Source Current Frequency Modulation Deviation ∆f 1-5 4.8 6.9 9 kHz Maximum Duty Cycle (On-duty) DMAX 1-5 71 75 79 % FB Pin Maximum Feedback Current IFB(MAX) 6-5 –220 –160 –100 μA Standby Operation Startup Voltage VSTBY 6-5 0.99 1.10 1.21 V Slope Compensation Startup Duty Cycle DSLP 6-5 – 27 – % Slope Compensation Rate SLP 6-5 –22 –17 –12 mV/μs VOCP1 3-5 0.71 0.78 0.86 V DPC – 1.5 1.9 2.3 mV/D% VOCP2 3-5 0.82 0.93 1.04 V tBW 1-5 280 400 520 ns Protection Operation OCP Threshold Voltage at Zero Duty Cycle (0% On-duty) Drain Peak Current Compensation Coefficient OCP Threshold Voltage After Compensation LEB Time OLP Delay Time* tDLY 1-5 – 200 – ms Circuit Current in OLP-Operation ICC(OLP) 4-5 – 410 700 μA OVP Threshold Voltage VCC(OVP) 4-5 27 28.5 30 V Latch Circuit Holding Current ICC(La.H) 4-5 – 140 220 μA Latch Circuit Release Voltage VCC(La.OFF) 4-5 6.4 7.1 7.8 V ELP Threshold Voltage VELP 7-5 6.4 7.1 7.8 V Sink Current in ELP Operation IELP 7-5 – 55 100 μA TJ(TSD) – 135 – – °C Thermal Shutdown Activating Temperature *Reference value of 47 nF capacitor between FM/ELP and GND Pins. STR-W6200D-DS SANKEN ELECTRIC CO., LTD. 4 November 12, 2012 STR-W6251D, STR-W6252D, and STR-W6253D PWM Off-Line Switching Regulator ICs Electrical Characteristics of MOSFET Unless specifically noted, TA is 25°C Characteristic Symbol Drain-to-Source Breakdown Voltage Drain Leakage Current Note Pin Min. Typ. VDSS 1-3 650 – – V IDSS 1-3 – – 300 μA – – 3.95 Ω 1-3 – – 2.8 Ω – – 1.9 Ω 1-3 – – 400 ns – – 2.23 °C/W – – 2.04 °C/W – – 1.75 °C/W STR-W6251D On-Resistance RDS(ON) STR-W6252D STR-W6253D Switching Time tr STR-W6251D Thermal Resistance Rθch-F STR-W6252D STR-W6253D STR-W6200D-DS Between channel and internal frame – SANKEN ELECTRIC CO., LTD. Max. Unit 5 November 12, 2012 STR-W6251D, STR-W6252D, and STR-W6253D PWM Off-Line Switching Regulator ICs Typical Characteristic Performance STR-W6251D 100 MOSFET Safe Operating Area Curve Single pulse, TA = 25°C 100 10 80 0.1 ms Drain Current, ID (A) Safe Operating Area Temperature Derating Coefficient (%) S. O. A. Temperature Derating Coefficient Curve 60 40 20 1 ms 1 Drain current limited by on-resistance 0.1 0 0 20 40 60 80 100 120 To use this graph, apply the S.O.A temperature derating coefficient taken from the graph at the left Internal Frame Temperature, TF (°C) 0.01 10 10 100 1000 Drain-to-Source Voltage, VDS (V) 100 MOSFET Temperature versus Power Dissipation Curve Allowable Power Dissipation, PD1 (W) EAS Temperature Derating Coefficient (%) MOSFET Avalanche Energy Derating Coefficient Curve 80 60 40 20 0 25 50 75 100 125 150 30 PD1 = 25 W 25 20 With infinite heatsink 15 10 Without heatsink 5 PD1 = 1.3 W 0 0 Transient Thermal Resistance, Rθch-c (°C/W) Channel Temperature, Tch (°C) 10 20 40 60 80 100 120 140 160 Ambient Temperature, TA (°C) Transient Thermal Resistance Curve 1 0.1 0.01 10-6 10-5 10-4 10-3 10-2 10-1 Time (s) STR-W6200D-DS SANKEN ELECTRIC CO., LTD. 6 November 12, 2012 STR-W6251D, STR-W6252D, and STR-W6253D PWM Off-Line Switching Regulator ICs Typical Characteristic Performance STR-W6252D 100 MOSFET Safe Operating Area Curve Single pulse, TA = 25°C 100 10 80 0.1 ms Drain Current, ID (A) Safe Operating Area Temperature Derating Coefficient (%) S. O. A. Temperature Derating Coefficient Curve 60 40 20 1 ms 1 Drain current limited by on-resistance 0.1 0 0 20 40 60 80 100 120 To use this graph, apply the S.O.A temperature derating coefficient taken from the graph at the left Internal Frame Temperature, TF (°C) 0.01 10 10 100 1000 Drain-to-Source Voltage, VDS (V) 100 MOSFET Temperature versus Power Dissipation Curve Allowable Power Dissipation, PD1 (W) EAS Temperature Derating Coefficient (%) MOSFET Avalanche Energy Derating Coefficient Curve 80 60 40 20 0 25 50 75 100 125 150 30 PD1 = 26 W 25 20 With infinite heatsink 15 10 Without heatsink 5 PD1 = 1.3 W 0 0 Transient Thermal Resistance, Rθch-c (°C/W) Channel Temperature, Tch (°C) 10 20 40 60 80 100 120 140 160 Ambient Temperature, TA (°C) Transient Thermal Resistance Curve 1 0.1 0.01 10-6 10-5 10-4 10-3 10-2 10-1 Time (s) STR-W6200D-DS SANKEN ELECTRIC CO., LTD. 7 November 12, 2012 STR-W6251D, STR-W6252D, and STR-W6253D PWM Off-Line Switching Regulator ICs Typical Characteristic Performance STR-W6253D 100 MOSFET Safe Operating Area Curve Single pulse, TA = 25°C 100 0.1 ms 10 80 Drain Current, ID (A) Safe Operating Area Temperature Derating Coefficient (%) S. O. A. Temperature Derating Coefficient Curve 60 40 20 1 ms 1 Drain current limited by on-resistance 0.1 0 0 20 40 60 80 100 120 To use this graph, apply the S.O.A temperature derating coefficient taken from the graph at the left Internal Frame Temperature, TF (°C) 0.01 10 10 100 1000 Drain-to-Source Voltage, VDS (V) 100 MOSFET Temperature versus Power Dissipation Curve Allowable Power Dissipation, PD1 (W) EAS Temperature Derating Coefficient (%) MOSFET Avalanche Energy Derating Coefficient Curve 80 60 40 20 0 25 50 75 100 125 150 30 PD1 = 27.5 W 25 20 With infinite heatsink 15 10 Without heatsink 5 PD1 = 1.3 W 0 0 Transient Thermal Resistance, Rθch-c (°C/W) Channel Temperature, Tch (°C) 10 20 40 60 80 100 120 140 160 Ambient Temperature, TA (°C) Transient Thermal Resistance Curve 1 0.1 0.01 10-6 10-5 10-4 10-3 10-2 10-1 Time (s) STR-W6200D-DS SANKEN ELECTRIC CO., LTD. 8 November 12, 2012 STR-W6251D, STR-W6252D, and STR-W6253D PWM Off-Line Switching Regulator ICs Functional Block Diagram STARTUP VCC D/ST 7.1 V UVLO REG VREG 28.5 V OVP 7.1 V R SQ ELP TSD RQ S Dmax 75% PWM OSC FM /ELP Istartup =1.6 mA RESET 15.5 V / 8.9 V DRV SQ R S2 Frequency Modulation OLP Q Drain Peak Current Compensation CK S1 tDLY = tFM ×16 R OCP 7.8 V 160 μA Feedback Control FB LEB Slope Compensation S/OCP GND Pin List Table Pin-out Diagram 1 D/ST Number Name 1 D/ST 5 GND 6 FB 7 FM/ELP (LF2003) STR-W6200D-DS MOSFET drain and input of the startup current 2 – 3 S/OCP 4 VCC Power supply voltage input for Control Part and input of Overvoltage Protection (OVP) signal 5 GND Ground 6 FB 7 FM/ELP 3 S/GND 4 VCC Function (Pin removed) MOSFET source and input of Overcurrent Protection (OCP) signal Input for constant voltage control signal Capacitor connection pin for frequency modulation and input of External Latch Protection SANKEN ELECTRIC CO., LTD. 9 November 12, 2012 STR-W6251D, STR-W6252D, and STR-W6253D PWM Off-Line Switching Regulator ICs Typical Application Circuit Clamp Snubber Circuit C10 R9 V OUT PC1 R3 P R6 R4 D4 C1 L2 D3 T1 VAC S U1 R7 C6 C5 R5 U2 C7 R8 GND D1 R2 D/ST S/OCP VCC GND FB FM/ELP STR-W6200D 1 3 4 5 6 7 CV ROCP C2 D External Latch Circuit (Optional) C4 PC1 C3 C8 Damper Snubber The following design feature should be observed: In applications having a power supply specified such that VDS has large transient surge voltages, a clamp snubber circuit of a capacitor-resistor-diode (CRD) combination should be added on the primary winding, P, or a damper snubber circuit of a capacitor (C) or a resistor-capacitor (CR) combination should be added between the D/ST pins and the S/OCP pin. STR-W6200D-DS SANKEN ELECTRIC CO., LTD. 10 November 12, 2012 STR-W6251D, STR-W6252D, and STR-W6253D PWM Off-Line Switching Regulator ICs Package Diagram TO-220F-6L package Leadform: 2003 10.0 ±0.2 4.2 ±0.2 Gate Burr Ø3.2 ±0.2 16.9 ±0.3 7.9 ±0.2 4.0 ±2 0.5 2.8 ±0.2 +0.2 End of bend (2 R1 ) (5.4) 6X0.65 –0.1 10.4 ±0.5 6X0.74 ±0.15 5.0 ±0.5 2.8 2.6 ±0.1 (At base of pin) View B View A 1.27 ±0.15 6×1.27 ±0.15 = 7.62 ±0.15 +0.2 0.45 –0.1 (At base of pin) 3 5 5.08 ±0.6 7 (At tip of pin) 1 2 4 6 0.5 0.5 View A Bottom View 0.5 0.5 View B Unit: mm Dashed line at Gate Burr indicates protrusion of 0.3 mm (max) STR W62xx YMDDR Part Number Lot Number Y is the last digit of the year (0 to 9) M is the month (1 to 9, O, N, or D) DD is a period of day (01 to 31) R is the Sanken Registration Number Pin treatment Pb-free. Device composition compliant with the RoHS directive. STR-W6200D-DS SANKEN ELECTRIC CO., LTD. 11 November 12, 2012 STR-W6251D, STR-W6252D, and STR-W6253D PWM Off-Line Switching Regulator ICs Because reliability can be affected adversely by improper storage environments and handling methods, please observe the following cautions. Cautions for Storage • Ensure that storage conditions comply with the standard temperature (5°C to 35°C) and the standard relative humidity (around 40% to 75%); avoid storage locations that experience extreme changes in temperature or humidity. • Avoid locations where dust or harmful gases are present and avoid direct sunlight. • Reinspect for rust on leads and solderability of the products that have been stored for a long time. Cautions for Testing and Handling When tests are carried out during inspection testing and other standard test periods, protect the products from power surges from the testing device, shorts between the product pins, and wrong connections. Ensure all test parameters are within the ratings specified by Sanken for the products. Remarks About Using Silicone Grease with a Heatsink • When silicone grease is used in mounting the products on a heatsink, it shall be applied evenly and thinly. If more silicone grease than required is applied, it may produce excess stress. • Volatile-type silicone greases may crack after long periods of time, resulting in reduced heat radiation effect. Silicone greases with low consistency (hard grease) may cause cracks in the mold resin when screwing the products to a heatsink. Our recommended silicone greases for heat radiation purposes, which will not cause any adverse effect on the product life, are indicated below: Type Suppliers G746 Shin-Etsu Chemical Co., Ltd. YG6260 Momentive Performance Materials Inc. SC102 Dow Corning Toray Co., Ltd. Cautions for Mounting to a Heatsink • When the flatness around the screw hole is insufficient, such as when mounting the products to a heatsink that has an extruded (burred) screw hole, the products can be damaged, even with a lower than recommended screw torque. For mounting the products, the mounting surface flatness should be 0.05 mm or less. STR-W6200D-DS • Please select suitable screws for the product shape. Do not use a flat-head machine screw because of the stress to the products. Self-tapping screws are not recommended. When using self-tapping screws, the screw may enter the hole diagonally, not vertically, depending on the conditions of hole before threading or the work situation. That may stress the products and may cause failures. • Recommended screw torque: 0.588 to 0.785 N●m (6 to 8 kgf●cm). • For tightening screws, if a tightening tool (such as a driver) hits the products, the package may crack, and internal stress fractures may occur, which shorten the lifetime of the electrical elements and can cause catastrophic failure. Tightening with an air driver makes a substantial impact. In addition, a screw torque higher than the set torque can be applied and the package may be damaged. Therefore, an electric driver is recommended. When the package is tightened at two or more places, first pre-tighten with a lower torque at all places, then tighten with the specified torque. When using a power driver, torque control is mandatory. Soldering • When soldering the products, please be sure to minimize the working time, within the following limits: 260±5°C 10±1 s (Flow, 2 times) 380±10°C 3.5±0.5 s (Soldering iron, 1 time) • Soldering should be at a distance of at least 1.5 mm from the body of the products. Electrostatic Discharge • When handling the products, the operator must be grounded. Grounded wrist straps worn should have at least 1 MΩ of resistance from the operator to ground to prevent shock hazard, and it should be placed near the operator. • Workbenches where the products are handled should be grounded and be provided with conductive table and floor mats. • When using measuring equipment such as a curve tracer, the equipment should be grounded. • When soldering the products, the head of soldering irons or the solder bath must be grounded in order to prevent leak voltages generated by them from being applied to the products. • The products should always be stored and transported in Sanken shipping containers or conductive containers, or be wrapped in aluminum foil. SANKEN ELECTRIC CO., LTD. 12 November 12, 2012 STR-W6251D, STR-W6252D, and STR-W6253D PWM Off-Line Switching Regulator ICs • The contents in this document are subject to changes, for improvement and other purposes, without notice. Make sure that this is the latest revision of the document before use. • Application and operation examples described in this document are quoted for the sole purpose of reference for the use of the products herein and Sanken can assume no responsibility for any infringement of industrial property rights, intellectual property rights or any other rights of Sanken or any third party which may result from its use. • Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to the society due to device failure or malfunction. • Sanken products listed in this document are designed and intended for the use as components in general purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). When considering the use of Sanken products in the applications where higher reliability is required (transportation equipment and its control systems, traffic signal control systems or equipment, fire/crime alarm systems, various safety devices, etc.), and whenever long life expectancy is required even in general purpose electronic equipment or apparatus, please contact your nearest Sanken sales representative to discuss, prior to the use of the products herein. The use of Sanken products without the written consent of Sanken in the applications where extremely high reliability is required (aerospace equipment, nuclear power control systems, life support systems, etc.) is strictly prohibited. • In the case that you use Sanken products or design your products by using Sanken products, the reliability largely depends on the degree of derating to be made to the rated values. Derating may be interpreted as a case that an operation range is set by derating the load from each rated value or surge voltage or noise is considered for derating in order to assure or improve the reliability. In general, derating factors include electric stresses such as electric voltage, electric current, electric power etc., environmental stresses such as ambient temperature, humidity etc. and thermal stress caused due to self-heating of semiconductor products. For these stresses, instantaneous values, maximum values and minimum values must be taken into consideration. In addition, it should be noted that since power devices or IC's including power devices have large self-heating value, the degree of derating of junction temperature affects the reliability significantly. • When using the products specified herein by either (i) combining other products or materials therewith or (ii) physically, chemically or otherwise processing or treating the products, please duly consider all possible risks that may result from all such uses in advance and proceed therewith at your own responsibility. • Anti radioactive ray design is not considered for the products listed herein. • Sanken assumes no responsibility for any troubles, such as dropping products caused during transportation out of Sanken's distribution network. • The contents in this document must not be transcribed or copied without Sanken's written consent. STR-W6200D-DS SANKEN ELECTRIC CO., LTD. 13 November 12, 2012