English/Chinese (simplified)

技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF600R12IS4F
PrimePACK™2模块采用第二代高速IGBT和碳化硅二极管针对高频应用带有温度检测NTC
PrimePACK™2modulewithfastIGBT2andSiCDiodeforhighfrequencyswitchingandNTC
初步数据/PreliminaryData
VCES = 1200V
IC nom = 600A / ICRM = 1200A
典型应用
• 高频开关应用
• 医疗应用
TypicalApplications
• HighFrequencySwitchingApplication
• MedicalApplications
电气特性
• 低开关损耗
• VCEsat带正温度系数
ElectricalFeatures
• LowSwitchingLosses
• VCEsatwithpositiveTemperatureCoefficient
机械特性
• 4kV交流1分钟绝缘
• 封装的CTI>400
• 高爬电距离和电气间隙
• 低热阻衬底
MechanicalFeatures
• 4kVAC1minInsulation
• PackagewithCTI>400
• HighCreepageandClearanceDistances
• SubstrateforLowThermalResistance
ModuleLabelCode
BarcodeCode128
DMX-Code
preparedby:GB
dateofpublication:2013-11-05
approvedby:MS
revision:2.5
1
ContentoftheCode
Digit
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
1-5
6-11
12-19
20-21
22-23
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF600R12IS4F
初步数据
PreliminaryData
IGBT,逆变器/IGBT,Inverter
最大额定值/MaximumRatedValues
集电极-发射极电压
Collector-emittervoltage
Tvj = 25°C
VCES
1200
V
连续集电极直流电流
ContinuousDCcollectorcurrent
TC = 55°C, Tvj max = 150°C
IC nom 600
A
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
1200
A
总功率损耗
Totalpowerdissipation
TC = 25°C, Tvj max = 150°C
Ptot
3,70
kW
栅极-发射极峰值电压
Gate-emitterpeakvoltage
VGES
+/-20
V
特征值/CharacteristicValues
min.
集电极-发射极饱和电压
Collector-emittersaturationvoltage
IC = 600 A, VGE = 15 V
IC = 600 A, VGE = 15 V
栅极阈值电压
Gatethresholdvoltage
IC = 24,0 mA, VCE = VGE, Tvj = 25°C
栅极电荷
Gatecharge
Tvj = 25°C
Tvj = 125°C
VCE sat
typ.
max.
3,20
3,80
3,75
V
V
VGEth
4,5
5,5
6,5
V
VGE = -15 V ... +15 V, VCE = 25V
QG
6,30
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
1,3
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
39,0
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
2,60
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
ICES
5,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
400
nA
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 600 A, VCE = 600 V
VGE = ±15 V
RGon = 0,5 Ω
Tvj = 25°C
Tvj = 125°C
td on
0,20
0,20
µs
µs
上升时间(电感负载)
Risetime,inductiveload
IC = 600 A, VCE = 600 V
VGE = ±15 V
RGon = 0,5 Ω
Tvj = 25°C
Tvj = 125°C
tr
0,06
0,07
µs
µs
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 600 A, VCE = 600 V
VGE = ±15 V
RGoff = 0,5 Ω
Tvj = 25°C
Tvj = 125°C
td off
0,53
0,55
µs
µs
下降时间(电感负载)
Falltime,inductiveload
IC = 600 A, VCE = 600 V
VGE = ±15 V
RGoff = 0,5 Ω
Tvj = 25°C
Tvj = 125°C
tf
0,07
0,08
µs
µs
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 600 A, VCE = 600 V, LS = 42 nH
VGE = ±15 V, di/dt = 6800 A/µs
RGon = 0,5 Ω
Tvj = 25°C
Tvj = 125°C
Eon
10,0
20,0
mJ
mJ
关断损耗能量(每脉冲)
Turn-offenergylossperpulse
IC = 600 A, VCE = 600 V, LS = 42 nH
VGE = ±15 V, du/dt = 5000 V/µs
RGoff = 0,5 Ω
Tvj = 25°C
Tvj = 125°C
Eoff
35,0
40,0
mJ
mJ
短路数据
SCdata
VGE ≤ 15 V, VCC = 900 V
VCEmax = VCES -LsCE ·di/dt
ISC
结-外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT
RthJC
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
preparedby:GB
dateofpublication:2013-11-05
approvedby:MS
revision:2.5
2
tP ≤ 10 µs, Tvj = 125°C
3900
A
34,0 K/kW
13,0 K/kW
125
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF600R12IS4F
初步数据
PreliminaryData
二极管,逆变器/Diode,Inverter
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VRRM 1200
V
IF
360
A
IFRM
720
A
I²t
10,5
kA²s
特征值/CharacteristicValues
min.
typ.
max.
1,60
2,20
2,05
正向电压
Forwardvoltage
IF = 360 A, VGE = 0 V
IF = 360 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
VF
反向恢复峰值电流
Peakreverserecoverycurrent
IF = 360 A, - diF/dt = 6800 A/µs (Tvj=125°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
IRM
190
190
A
A
恢复电荷
Recoveredcharge
IF = 360 A, - diF/dt = 6800 A/µs (Tvj=125°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
Qr
0,00
0,00
µC
µC
反向恢复损耗(每脉冲)
Reverserecoveryenergy
IF = 360 A, - diF/dt = 6800 A/µs (Tvj=125°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
Erec
10,0
10,0
mJ
mJ
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
125
min.
typ.
max.
R25
5,00
kΩ
∆R/R
-5
5
%
P25
20,0
mW
V
V
80,0 K/kW
30,0 K/kW
°C
负温度系数热敏电阻/NTC-Thermistor
特征值/CharacteristicValues
额定电阻值
Ratedresistance
TC = 25°C
R100偏差
DeviationofR100
TC = 100°C, R100 = 493 Ω
耗散功率
Powerdissipation
TC = 25°C
B-值
B-value
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]
B25/50
3375
K
B-值
B-value
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]
B25/80
3411
K
B-值
B-value
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]
B25/100
3433
K
根据应用手册标定
Specificationaccordingtothevalidapplicationnote.
preparedby:GB
dateofpublication:2013-11-05
approvedby:MS
revision:2.5
3
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF600R12IS4F
初步数据
PreliminaryData
模块/Module
绝缘测试电压
Isolationtestvoltage
RMS, f = 50 Hz, t = 1 min.
模块基板材料
Materialofmodulebaseplate
内部绝缘
Internalisolation
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
爬电距离
Creepagedistance
VISOL 4,0
kV
Cu
Al2O3
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
33,0
33,0
mm
电气间隙
Clearance
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
19,0
19,0
mm
相对电痕指数
Comperativetrackingindex
CTI
> 400
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个模块/permodule
λPaste=1W/(m·K)/λgrease=1W/(m·K)
杂散电感,模块
Strayinductancemodule
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip
TC=25°C,每个开关/perswitch
储存温度
Storagetemperature
模块安装的安装扭距
Mountingtorqueformodulmounting
端子联接扭距
Terminalconnectiontorque
min.
typ.
RthCH
4,50
LsCE
18
nH
RCC'+EE'
0,30
mΩ
Tstg
-40
125
°C
螺丝M5根据相应的应用手册进行安装
ScrewM5-Mountingaccordingtovalidapplicationnote
M
3,00
-
6,00
Nm
螺丝M4根据相应的应用手册进行安装
ScrewM4-Mountingaccordingtovalidapplicationnote
螺丝M8根据相应的应用手册进行安装
ScrewM8-Mountingaccordingtovalidapplicationnote
1,8
-
2,1
Nm
M
8,0
-
10
Nm
重量
Weight
G
825
g
preparedby:GB
dateofpublication:2013-11-05
approvedby:MS
revision:2.5
4
max.
K/kW
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF600R12IS4F
初步数据
PreliminaryData
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
VGE=15V
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
Tvj=125°C
1200
1200
Tvj = 25°C
Tvj = 125°C
960
960
840
840
720
720
600
600
480
480
360
360
240
240
120
120
0
0,0
0,5
1,0
1,5
VGE = 8V
VGE = 9V
VGE = 10V
VGE = 12V
VGE = 15V
VGE = 20V
1080
IC [A]
IC [A]
1080
2,0
2,5 3,0
VCE [V]
3,5
4,0
4,5
0
5,0
传输特性IGBT,逆变器(典型)
transfercharacteristicIGBT,Inverter(typical)
IC=f(VGE)
VCE=20V
0,0
0,5
1,0
1,5
2,0
2,5 3,0
VCE [V]
3,5
4,0
4,5
5,0
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=0.5Ω,RGoff=0.5Ω,VCE=600V
1200
140
Tvj = 25°C
Tvj = 125°C
1080
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
120
960
100
840
80
E [mJ]
IC [A]
720
600
60
480
360
40
240
20
120
0
5
6
7
8
9
VGE [V]
10
11
0
12
preparedby:GB
dateofpublication:2013-11-05
approvedby:MS
revision:2.5
5
0
200
400
600
IC [A]
800
1000
1200
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF600R12IS4F
初步数据
PreliminaryData
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=600A,VCE=600V
瞬态热阻抗IGBT,逆变器
transientthermalimpedanceIGBT,Inverter
ZthJC=f(t)
120
100
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
ZthJC : IGBT
100
10
ZthJC [K/kW]
E [mJ]
80
60
40
1
20
0
i:
1
2
3
4
ri[K/kW]: 8,067796 0,1152543 23,05085 2,766102
τi[s]:
0,004
0,02
0,05
0,1
0,0
0,5
1,0
1,5
2,0
2,5 3,0
RG [Ω]
3,5
4,0
4,5
0,1
0,001
5,0
反偏安全工作区IGBT,逆变器(RBSOA)
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=0.5Ω,Tvj=125°C
0,01
0,1
t [s]
1
10
正向偏压特性二极管,逆变器(典型)
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
1400
600
IC, Modul
IC, Chip
560
Tvj = 25°C
Tvj = 125°C
520
1200
480
440
1000
400
360
IF [A]
IC [A]
800
600
320
280
240
200
400
160
120
200
80
40
0
0
200
400
600
800
VCE [V]
1000
1200
0
1400
preparedby:GB
dateofpublication:2013-11-05
approvedby:MS
revision:2.5
6
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4
VF [V]
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF600R12IS4F
初步数据
PreliminaryData
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(IF)
RGon=0.5Ω,VCE=600V
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(RG)
IF=360A,VCE=600V
25
25
Erec, Tvj = 125°C
E [mJ]
E [mJ]
Erec, Tvj = 125°C
15
5
0
200
400
600
IF [A]
800
1000
5
1200
瞬态热阻抗二极管,逆变器
transientthermalimpedanceDiode,Inverter
ZthJC=f(t)
15
0,0
0,5
1,0
1,5
2,0
2,5 3,0
RG [Ω]
3,5
4,0
4,5
5,0
负温度系数热敏电阻温度特性
NTC-Thermistor-temperaturecharacteristic(typical)
R=f(T)
100
100000
ZthJC : Diode
Rtyp
R[Ω]
ZthJC [K/kW]
10000
10
1000
i:
1
2
3
4
ri[K/kW]: 18,98305 0,2711865 54,23729 6,508474
τi[s]:
0,004
0,02
0,05
0,1
1
0,001
0,01
0,1
t [s]
1
100
10
preparedby:GB
dateofpublication:2013-11-05
approvedby:MS
revision:2.5
7
0
20
40
60
80
100
TC [°C]
120
140
160
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF600R12IS4F
初步数据
PreliminaryData
接线图/circuit_diagram_headline
封装尺寸/packageoutlines
preparedby:GB
dateofpublication:2013-11-05
approvedby:MS
revision:2.5
8
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF600R12IS4F
初步数据
PreliminaryData
使用条件和条款
使用条件和条款
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Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill
havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch
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exclusivelypursuantthetermsandconditionsofthesupplyagreement.Therewillbenoguaranteeofanykindfortheproductandits
characteristics.Theinformationinthevalidapplication-andassemblynotesofthemodulemustbeconsidered.
Shouldyourequireproductinformationinexcessofthedatagiveninthisproductdatasheetorwhichconcernsthespecificapplicationof
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ShouldyouintendtousetheProductinaviationapplications,inhealthorliveendangeringorlifesupportapplications,pleasenotify.Please
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preparedby:GB
dateofpublication:2013-11-05
approvedby:MS
revision:2.5
9
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